MCH3309-TL-E - ON SEMICONDUCTOR

MCH3309

No.6910-1/4

Features

•Low ON-resistance.

•Ultrahigh-speed switching.

•2.5V drive.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6910

MCH3309

Package Dimensions

unit : mm

2167

[MCH3309]

11801 TS IM TA-3058

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

0.2

0.25

2.1

1.6

2.0

0.65

0.3

0.85

0.15

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS --20 V

Gate-to-Source Voltage VGSS ±10 V

Drain Current (DC) ID--1.5 A

Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --6.0 A

Allowable Power Dissipation PDMounted on a ceramic board (900mm2✕0.8mm) 0.9 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --20 V

Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0 --1 μA

Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 μA

Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.3 V

Forward T ransfer Admittance ⏐yfs⏐VDS=--10V, ID=--0.8A 1.6 2.3 S

Static Drain-to-Source On-State Resistance

RDS(on)1 ID=--0.8A, VGS=--4V 180 235 mΩ

RDS(on)2 ID=--0.4A, VGS=--2.5V 240 340 mΩ

Input Capacitance Ciss VDS=--10V, f=1MHz 290 pF

Output Capacitance Coss VDS=--10V, f=1MHz 40 pF

Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 25 pF

Marking : JJ Continued on next page.

Preliminary

MCH3309

No.6910-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Turn-ON Delay Time td(on) See specified Test Circuit 10 ns

Rise T ime trSee specified Test Circuit 35 ns

Turn-OFF Delay Time td(off) See specified Test Circuit 32 ns

Fall T ime tfSee specified Test Circuit 27 ns

Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--1.5A 3.2 nC

Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--1.5A 0.8 nC

Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1.5A 0.6 nC

Diode Forward Voltage VSD IS=--1.5A, VGS=0 --0.87 --1.5 V

Switching Time Test Circuit

PW=10μs

D.C.≤1%

--4V

VIN

P.G 50Ω

MCH3309

ID= --0.8A

RL=12.5Ω

VDD= --10V

VOUT

VIN

--60 --40 --20 0 20 40 60 80 100 120 140 160

0 --1 --2 --3 --4 --5 --6

100

200

300

400

500

600

0--7 --8 --9 --10

IT02733

--0.4

--0.2

--0.6

--0.8

--1.4

--1.6

--1.8

--2.0

--0.2

--1.2

--1.0

--0.4

--0.2

--0.6

--0.8

--1.4

--1.6

--1.8

--2.0

--1.2

--1.0

--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9

VGS= --1.5V

--6.0V

--2.0V

--4.0V

--2.5V

--3.0V

IT02731

0 --0.5 --1.0 --1.5 --2.0 --2.5

VDS= --10V

Ta=75°C

25°C

--25°C

IT02732

IT02734

ID= --0.4A, VGS= --2.5V

ID= --0.8A, VGS= --4.0V

100

200

300

400

500

Ta=25°C

--0.8A

ID= --0.4A

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Ambient Temperature, Ta -- °C

RDS(on) -- Ta

Gate-to-Source Voltage, VGS -- V

RDS(on) -- VGS

Static Drain-to-Source

On-State Resistance, RDS(on) -- mΩ

Gate-to-Source Voltage, VGS -- V

ID -- VGS

Drain Current, ID -- A

Drain-to-Source Voltage, VDS -- V

ID -- VDS

Drain Current, ID -- A

MCH3309

No.6910-3/4

--1

--2

--3

3.5312

--4

VDS= --10V

ID= --1.5A

IT02739

020 40

0.2

0.4

80 100 120

0.8

0.6

1.2

1.0

0.9

140 160

IT02741

100ms

DC operation

1ms

10ms

--10

--1.0

--0.1

--0.01 23 5723 57 23 5

--0.1 --1.0 --10 IT02740

3--0.1

357 --1.0

23 57 23 5

100

VDD= --10V

VGS= --4V

td(on)

td(off)

IT02737

10 --5

100

--10

1000

--20--15

f=1MHz

Ciss

Coss

Crss

IT02738

Operation in this

area is limited by RDS(on).

IT02735

--0.01

0.1 --0.1 --1.0

23 5723 57 23 5

1.0

⏐yfs⏐ -- ID

VDS= --10V

25°C

Ta= --25°C

IT02736

0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.4--1.2

--0.01

--0.1

--10

--1.0

VGS=0V

--25°C

25°C

Ta=75

ID= --1.5A

IDP= --6.0A

<10μs

100μs

Drain Current, ID -- A

Forward T ransfer Admittance, ⏐

fs⏐ -- S

Diode Forward Voltage, VSD -- V

Source Current, IS -- A

IS -- VSD

Drain Current, ID -- A

SW Time -- ID

Switching Time, SW Time -- ns

Drain-to-Source Voltage, VDS -- V

Ciss, Coss, Crss -- VDS

Ciss, Coss, Crss -- pF

Total Gate Charge, Qg -- nC

VGS -- Qg

Gate-to-Source Voltage, VGS -- V

A S O

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

Ta=25°C

Single pulse

Mounted on a ceramic board(900mm

✕0.8mm)

Ambient Temperature, Ta -- °C

PD -- Ta

Allowable Power Dissipation, PD -- W

Mounted on a ceramic board(900mm

✕0.8mm)

MCH3309

No.6910-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of January, 2001. Specifications and information herein are subject

to change without notice.