Ordering number : ENN6910 MCH3309 P-Channel Silicon MOSFET MCH3309 Ultrahigh-Speed Switching Applications Preliminary Features * * Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2167 [MCH3309] 0.25 * 0.3 0.15 2 0.65 0.25 1 2.1 1.6 3 2.0 0.85 1 : Gate 2 : Source 3 : Drain 0.15 Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) SANYO : MCPH3 Conditions Ratings Unit VDSS VGSS --20 V 10 V ID --1.5 A Drain Current (Pulse) IDP PW10s, duty cycle1% Allowable Power Dissipation PD Mounted on a ceramic board (900mm20.8mm) --6.0 A 0.9 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS Conditions typ Unit max ID=--1mA, VGS=0 VDS=--20V, VGS=0 VGS=8V, VDS=0 --20 VDS=--10V, ID=--1mA --0.4 yfs RDS(on)1 VDS=--10V, ID=--0.8A 1.6 ID=--0.8A, VGS=--4V RDS(on)2 Ciss 290 pF 40 pF 25 pF IGSS VGS(off) Output Capacitance Coss ID=--0.4A, VGS=--2.5V VDS=--10V, f=1MHz VDS=--10V, f=1MHz Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz Input Capacitance Ratings min Marking : JJ V --1 A 10 A --1.3 V 180 235 m 240 340 m 2.3 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 11801 TS IM TA-3058 No.6910-1/4 MCH3309 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min typ Unit max td(on) tr See specified Test Circuit 10 See specified Test Circuit 35 ns td(off) tf See specified Test Circuit 32 ns Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD ns See specified Test Circuit 27 ns VDS=--10V, VGS=--4V, ID=--1.5A VDS=--10V, VGS=--4V, ID=--1.5A 3.2 nC 0.8 nC VDS=--10V, VGS=--4V, ID=--1.5A IS=--1.5A, VGS=0 0.6 nC --0.87 --1.5 V Switching Time Test Circuit VDD= --10V VIN 0V --4V ID= --0.8A RL=12.5 VIN D VOUT PW=10s D.C.1% G P.G MCH3309 50 S ID -- VDS --1.0 --0.8 --0.6 --1.0 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 0 --1.0 400 --0.8A 300 ID= --0.4A 200 100 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V --9 --10 IT02733 --1.5 --2.0 --2.5 IT02732 RDS(on) -- Ta 500 Static Drain-to-Source On-State Resistance, RDS(on) -- m 500 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25C 0 --0.5 IT02731 RDS(on) -- VGS 600 Static Drain-to-Source On-State Resistance, RDS(on) -- m --1.2 5C C 25 C VGS= --1.5V --1.4 Ta= 7 --1.2 --25 --1.4 --1.6 Drain Current, ID -- A --6.0 Drain Current, ID -- A --1.6 VDS= --10V --1.8 --2 .0 V --4.0 V --1.8 ID -- VGS --2.0 --3 --2 .0V .5V V --2.0 400 V --2.5 S= VG , A --0.4 V I D= = --4.0 A, V GS .8 0 -I D= 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT02734 No.6910-2/4 MCH3309 yfs -- ID 5 3 C 25 2 5C = Ta 1.0 --2 C 75 7 5 3 3 5 7 --0.1 2 3 5 7 --1.0 2 3 3 2 --0.1 7 5 5 0 --0.4 --0.6 --0.8 --1.2 --1.4 IT02736 Ciss, Coss, Crss -- VDS 1000 f=1MHz 7 5 td(off) 3 tf 2 tr td(on) Ciss 3 Ciss, Coss, Crss -- pF 5 2 100 7 5 Coss 7 3 Crss 5 2 10 3 10 3 5 7 2 --0.1 3 5 7 --1.0 2 3 Drain Current, ID -- A 0 5 --10 7 5 VDS= --10V ID= --1.5A 3 2 Drain Current, ID -- A --3 --2 --1 1 2 3 Total Gate Charge, Qg -- nC 3.5 IT02739 PD -- Ta 1.2 --15 --10 --20 <10s 10 1m 0s s ID= --1.5A 10 DC ms 10 0m s op era tio 3 2 --0.1 7 5 IT02738 ASO IDP= --6.0A --1.0 7 5 3 2 0 --5 Drain-to-Source Voltage, VDS -- V IT02737 VGS -- Qg --4 0 --1.0 Diode Forward Voltage, VSD -- V VDD= --10V VGS= --4V 7 --0.2 IT02735 SW Time -- ID 100 Switching Time, SW Time -- ns --1.0 7 5 --0.01 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 3 2 3 2 2 0.1 --0.01 Allowable Power Dissipation, PD -- W VGS=0V Ta=7 5C 25C --25C 7 IS -- VSD --10 7 5 VDS= --10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 10 n Operation in this area is limited by RDS(on). Ta=25C Single pulse Mounted on a ceramic board(900mm20.8mm) --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT02740 1.0 0.9 M ou nte 0.8 do na ce ram 0.6 ic bo ard (9 0.4 00 mm 0.2 2 0 .8m m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT02741 No.6910-3/4 MCH3309 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2001. Specifications and information herein are subject to change without notice. PS No.6910-4/4