© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C, RGS = 1MΩ100 V
VGSM Transient ± 30 V
ID25 TC= 25°C 200 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 500 A
IATC= 25°C40 A
EAS TC= 25°C 1.5 J
PDTC= 25°C 550 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6mm (0.062in.) from case for 10s 300 °C
Plastic body for 10 seconds 260 °C
MdMounting torque 1.13 / 10 Nm/lb.in.
Weight TO-247 6.0 g
TO-3P 5.5 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 100 V
VGS(th) VDS = VGS, ID = 250μA 2.5 4.5 V
IGSS VGS = ± 20V, VDS = 0V ±200 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 150°C 250 μA
RDS(on) VGS = 10V, ID = 50A, Notes 1, 2 4.5 5.5 mΩ
TrenchMVTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH200N10T
IXTQ200N10T
VDSS = 100V
ID25 = 200A
RDS(on) ≤≤
≤≤
≤ 5.5mΩΩ
ΩΩ
Ω
DS99654A(10/08)
G = Gate D = Drain
S = Source TAB = Drain
Features
International standard packages
175°C Operating Temperature
Avalanche Rated
Low RDS(on)
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
TO-3P (IXTQ)
TO-247 (IXTH)
S(TAB)
(TAB)
GDS
G
D
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH200N10T
IXTQ200N10T
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 60A, Note 1 60 96 S
Ciss 9400 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1087 pF
Crss 140 pF
td(on) 35 ns
tr 31 ns
td(off) 45 ns
tf 34 ns
Qg(on) 152 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 50A 47 nC
Qgd 47 nC
RthJC 0.27 °C/W
RthCH 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
IS VGS = 0V 200 A
ISM Repetitive, Pulse width limited by TJM 500 A
VSD IF = 50A, VGS = 0V, Note 1 1.0 V
trr 76 ns
QRM 205 nC
IRM 5.4 A
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 3.3Ω (External)
IF = 100A, VGS = 0V,-di/dt = 100A/μs
VR = 50V
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
© 2008 IXYS CORPORATION, All rights reserved
IXTH200N10T
IXTQ200N10T
Fig. 1. Output Characteristics
@ 25º C
0
20
40
60
80
100
120
140
160
180
200
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 2. Extended Output Characteristics
@ 25º C
0
50
100
150
200
250
300
350
0123456
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
200
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
DS
- Volts
I
D
- Amperes
5V
6V
7V
V
GS
= 10V
9V
8V
Fig. 4. R
DS(on)
Normalized to I
D
= 100A Value
vs. Jun cti on Temper at u r e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 200A
I
D
= 100A
Fig. 5. R
DS(on)
Normalized to I
D
= 100A Value
vs. Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V
- - - -
T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH200N10T
IXTQ200N10T
IXYS REF: T_200N10T(6V)9-30-08-D
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 150ºC
25ºC
- 40ºC
Fig . 8. Tra n scon d uctance
0
20
40
60
80
100
120
140
160
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Dio de
0
30
60
90
120
150
180
210
240
270
300
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate C h arg e
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 50V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1MHz
Ciss
Crss
Coss
Fig . 12 . Maxi mu m Tr an sien t Th er mal
Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_200N10T(6V)9-30-08-D
IXTH200N10T
IXTQ200N10T
Fi g . 14. R esisti ve Tur n -o n
Rise T ime vs. Drain Current
22
23
24
25
26
27
28
29
30
31
32
33
34
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3
V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 15. R esi st iv e Tur n -o n
Switc h in g Ti mes v s. G ate R esistance
0
20
40
60
80
100
120
140
160
180
200
220
2 4 6 8 10 12 14 16 18 20
R
G
- Ohms
t
r
- Nanoseconds
30
35
40
45
50
55
60
65
70
75
80
85
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fi g . 16. R esisti ve Tur n -off
Switching T imes vs. Junction T emperature
28
30
32
34
36
38
40
42
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
45
50
55
60
65
70
75
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 10V
V
DS
= 50V
I
D
= 25A
I
D
= 50A
Fi g. 17. R esisti ve Tu rn -o ff
Switching Tim es vs. Drain Current
30
31
32
33
34
35
36
37
38
24 26 28 30 32 34 36 38 40 42 44 46 48 50
I
D
- Amperes
t
f
- Nanoseconds
40
45
50
55
60
65
70
75
80
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 10V
V
DS
= 50V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
22
23
24
25
26
27
28
29
30
31
32
33
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3
V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
Fi g . 18. R esisti ve Tur n -off
Switchi n g Times vs. Gate Resistan ce
0
20
40
60
80
100
120
140
160
180
200
2468101214161820
R
G
- Ohms
t
f
- Nanoseconds
50
75
100
125
150
175
200
225
250
275
300
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 50V
I
D
= 50A
I
D
= 25A
