LT P4SG
1Version 1.3 | 2018-06-21
Produktdatenblatt | Version 1.1
www.osram-os.com
LT P4SG
PointLED®
With a diameter of just 2 mm, the PointLED is one of
the smallest packages in its class and achieves high
luminous e󰘲cacies.
Due to its round and 󰘱at package, measuring only
0.775 mm high, it is ideal for application where space
is a sensitive issue.
Applications
—Ambient Light Sensors
—Cluster, Button Backlighting
—Electronic Equipment
—Gaming, Amusement, Gambling
—Health monitoring (Heart rate monitoring, pulse
oximetry)
—Interior Illumination e.g. Ambient Map
—Transportation, Plane, Ship
—White Goods
Features:
—Package: white SMT package, colorless clear silicone resin
—Chip technology: ThinGaN
—Typ. Radiation: 120° (Lambertian emitter)
—Color:
λ
dom = 528 nm (● true green)
—Corrosion Robustness Class: 1B
—ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
LT P4SG
2Version 1.3 | 2018-06-21
Ordering Information
Type Luminous Intensity 1) Mounting methode Ordering Code
IF = 20 mA
Iv
LT P4SG-V1AB-36-F 710 ... 1800 mcd Top Q65110A6029
LT P4SG-V1AB-36-1 710 ... 1800 mcd Reverse Q65110A7127
LT P4SG
3Version 1.3 | 2018-06-21
Maximum Ratings
Parameter Symbol Values
Operating Temperature Top min.
max.
-40 °C
100 °C
Storage Temperature Tstg min.
max.
-40 °C
100 °C
Junction Temperature Tjmax. 125 °C
Forward current
TS = 25 °C
IFmin.
max.
3 mA
20 mA
Surge Current
t ≤ 10 µs; D = 0.005 ; TS = 25 °C
IFS max. 200 mA
Reverse voltage 2)
TS = 25 °C
VRmax. 5 V
ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
VESD 2 kV
LT P4SG
4Version 1.3 | 2018-06-21
Characteristics
IF = 20 mA; TS = 25 °C
Parameter Symbol Values
Peak Wavelength
λ
peak typ. 523 nm
Dominant Wavelength 3)
IF = 20 mA
λ
dom min.
typ.
max.
519 nm
528 nm
543 nm
Spectral Bandwidth at 50% Irel,max
∆λ
typ. 33 nm
Viewing angle at 50 % IV2
φ
typ. 120 °
Forward Voltage 4)
IF = 20 mA
VFmin.
typ.
max.
2.90 V
3.20 V
3.70 V
Reverse current 2)
VR = 5 V
IRtyp.
max.
0.01 µA
10 µA
Temperature Coe󰘲cient of Peak Wavelength
-10°C ≤ T ≤ 100°C
TC
λ
peak typ. 0.04 nm / K
Real thermal resistance junction/solderpoint 5) RthJS real max. 240 K / W
LT P4SG
5Version 1.3 | 2018-06-21
Brightness Groups
Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 6)
IF = 20 mA IF = 20 mA IF = 20 mA
min. max. typ.
IvIv
Φ
V
V1 710 mcd 900 mcd 2420 mlm
V2 900 mcd 1120 mcd 3030 mlm
AA 1120 mcd 1400 mcd 3780 mlm
AB 1400 mcd 1800 mcd 4800 mlm
Forward Voltage Groups
Group Forward Voltage 4) Forward Voltage 4)
IF = 20 mA IF = 20 mA
min. max.
VFVF
4 2.90 V 3.20 V
5 3.20 V 3.50 V
6 3.50 V 3.70 V
Wavelength Groups
Group Dominant Wavelength 3) Dominant Wavelength 3)
IF = 20 mA IF = 20 mA
min. max.
λ
dom
λ
dom
3 519 nm 525 nm
4 525 nm 531 nm
5 531 nm 537 nm
6 537 nm 543 nm
LT P4SG
6Version 1.3 | 2018-06-21
Group Name on Label
Example: AA-3-4
Brightness Wavelength Forward Voltage
AA 3 4
LT P4SG
7Version 1.3 | 2018-06-21
LT P4SG
350 400 450 500 550 600 650 700 750
800
λ
[nm]
0,0
0,2
0,4
0,6
0,8
1,0
Irel
:V
λ
:truegreen
Relative Spectral Emission 6)
Irel = f (
λ
); IF = 20 mA; TS = 25 °C
LT P4SG
-100°
-90°
-80°
-70°
-60°
-50°
-40°
-30°
-20°
-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°
ϕ
[°]
0,0
0,2
0,4
0,6
0,8
1,0
Irel
Radiation Characteristics 6)
Irel = f (
ϕ
); TS = 25 °C
LT P4SG
8Version 1.3 | 2018-06-21
LT P4SG
3
6
8
10
12
14
16
18
20
I
F
[mA]
0,0
0,2
0,4
0,6
0,8
1,0
I
V
I
V
(20mA)
Relative Luminous Intensity 6), 7)
Iv/Iv(20 mA) = f(IF); TS = 25 °C
LT P4SG
2,
83
,32,93,0 3,13,2
V
F
[V]
3
4
6
8
10
12
14
16
18
20
I
F
[mA]
Forward current 6), 7)
IF = f(VF); TS = 25 °C
I
OHL02527
505
dom
λ
0 mA
nm
20 40 60 80 120
510
515
520
525
530
535
545
F
true green
Dominant Wavelength 6)
λ
dom = f(IF); TS = 25 °C
LT P4SG
9Version 1.3 | 2018-06-21
LT P4SG
-40-20 020406080100 120
T
j
[°C]
0,0
0,2
0,4
0,6
0,8
1,0
1,2
I
v
I
v
(25°C)
Relative Luminous Intensity 6)
Iv/Iv(25 °C) = f(Tj); IF = 20 mA
LT P4SG
-40-20 020406080100 120
T
j
[°C]
-0,4
-0,2
0,0
0,2
0,4
∆
V
F
[V]
Forward Voltage 6)
∆
VF = VF - VF(25 °C) = f(Tj); IF = 20 mA
LT P4SG
-40-20 020406080100 120
T
j
[°C]
-6
-4
-2
0
2
4
6
8
∆λ
dom
[nm]
Dominant Wavelength 6)
λ
dom = f(Tj); IF = 20 mA
LT P4SG
10 Version 1.3 | 2018-06-21
OHL02567
00
I
mA
F
˚C
T
temp. ambient
temp. solder point
T
T
S
A
A
T
T
S
5
10
15
20
25
20 40 60 80 100
Max. Permissible Forward Current
IF = f(T)
1010
0
-2-3-4-5
1010 10
F
I
AP
t
=
DT
210-1
10
t
p
10 s10
OHL02566
T
t
P
I
F
0.02
0.5
0.2
0.05
0.1
D
=
0.005
0.01
1
0.05
0.10
0.15
0.20
0.25
Permissible Pulse Handling Capability
IF = f(tp); D: Duty cycle; TS = 85 °C
1010
0
-2-3-4-5
1010 10
F
I
AP
t
=
DT
210-1
10
t
p
10 s10
OHL02565
T
t
P
I
F
0.02
0.5
0.2
0.05
0.1
D
=
0.005
0.01
1
0.05
0.10
0.15
0.20
0.25
Permissible Pulse Handling Capability
IF = f(tp); D: Duty cycle; TS = 25 °C
LT P4SG
11 Version 1.3 | 2018-06-21
Dimensional Drawing 8)
Approximate Weight: 6.0 mg
Corrosion test: Class: 1B
Test condition: 25°C / 75 % RH / 200ppb SO2, 200ppb NO2, 10ppb H2S,
10ppb Cl2 / 21 days (EN 60068-2-60 (Method 4))
LT P4SG
12 Version 1.3 | 2018-06-21
For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not
suitable for ultra sonic cleaning.
Recommended Solder Pad 8)
For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not
suitable for ultra sonic cleaning.
Recommended Solder Pad 8)
LT P4SG
13 Version 1.3 | 2018-06-21
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E
0
0s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300
t
T
˚C
S
t
t
P
t
T
p
240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
Pro󰘰le Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
Ramp-up rate to preheat*)
25 °C to 150 °C
2 3 K/s
Time tS
TSmin to TSmax
tS60 100 120 s
Ramp-up rate to peak*)
TSmax to TP
2 3 K/s
Liquidus temperature TL217 °C
Time above liquidus temperature tL80 100 s
Peak temperature TP245 260 °C
Time within 5 °C of the speci󰘰ed peak
temperature TP - 5 K
tP10 20 30 s
Ramp-down rate*
TP to 100 °C
3 6 K/s
Time
25 °C to TP
480 s
All temperatures refer to the center of the package, measured on the top of the component
* slope calculation DT/Dt: Dt max. 5 s; ful󰘰llment for the whole T-range
LT P4SG
14 Version 1.3 | 2018-06-21
Taping 8)
LT P4SG
15 Version 1.3 | 2018-06-21
Taping 8)
LT P4SG
16 Version 1.3 | 2018-06-21
Tape and Reel 9)
Reel dimensions [mm]
A W Nmin W1W2 max Pieces per PU
180 mm 8 + 0.3 / - 0.1 60 8.4 + 2 14.4 3000
330 mm 8 + 0.3 / - 0.1 60 8.4 + 2 14.4 12000
LT P4SG
17 Version 1.3 | 2018-06-21
Barcode-Product-Label (BPL)
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.
Dry Packing Process and Materials 8)
OHA00539
OSRAM
Moisture-sensitive label or print
Barcode label
Desiccant
Humidity indicator
Barcode label
OSRAM
Please check the HIC immidiately after
bag opening.
Discard if circles overrun.
Avoid metal contact.
WET
Do not eat.
Comparator
check dot
parts still adequately dry.
examine units, if necessary
examine units, if necessary
5%
15%
10%
bake units
bake units
If wet,
change desiccant
If wet,
Humidity Indicator
MIL-I-8835
If wet,
Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours
a) Humidity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or
reflow, vapor-phase reflow, or equivalent processing (peak package
2. After this bag is opened, devices that will be subjected to infrared
1. Shelf life in sealed bag: 24 months at < 40 ˚C and < 90% relative humidity (RH).
Moisture Level 5a
at factory conditions of
(if blank, seal date is identical with date code).
a) Mounted within
b) Stored at
body temp.
3. Devices require baking, before mounting, if:
Bag seal date
Moisture Level 1
Moisture Level 2
Moisture Level 2a
4. If baking is required,
b) 2a or 2b is not met.
Date and time opened:
reference IPC/JEDEC J-STD-033 for bake procedure.
Floor time see below
If blank, see bar code label
Floor time > 1 Year
Floor time 1 Year
Floor time 4 Weeks
10% RH.
_
<
Moisture Level 4
Moisture Level 5
˚C).
OPTO SEMICONDUCTORS
MOISTURE SENSITIVE
This bag contains
CAUTION
Floor time 72 Hours
Floor time 48 Hours
Floor time 24 Hours
30 ˚C/60% RH.
_
<
LEVEL
If blank, see
bar code label
LT P4SG
18 Version 1.3 | 2018-06-21
Transportation Packing and Materials 8)
OHA02044
PACKVAR:
R077
Additional TEXT
P-1+Q-1
Multi TOPLED
Muster
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
1
0
(9D) D/C:
11
(1T) LOT NO:
210021998
123GH1234
02
4 5
(Q)QTY:2000
0144
(G) GROUP:
260 C RT
240 C R
3
220 C R
ML
Bin3:
Bin2: Q-1-20
Bin1: P-1-20
LSY T676
2
2a
Temp ST
R18
DEMY
PACKVAR:
R077
Additional TEXT
P-1+Q-1
Multi TOPLED
Muster
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
1
0
(9D) D/C:
11
(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY:
2000
0144
(G) GROUP:
260 C RT
240 C R
3
220 C R
ML
Bin3:
Bin2: Q-1-20
Bin1: P-1-20
LSY T676
2
2a
Temp ST
R18
DEMY
OSRAM
Packing
Sealing label
Barcode label
Moisture Level 3 Floor time 168 Hours Moisture Level 6Floor time 6 Hours
a) Humidity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or
reflow, vapor-phase reflow, or equivalent processing (peak package
2. After this bag is opened, devices that will be subjected to infrared
1. Shelf life in sealed bag: 24 months at < 40 ˚C and < 90% relative humidity (RH).
Moisture Level 5a
at factory conditions of
(if blank, seal date is identical with date code).
a) Mounted within
b) Stored at
body temp.
3. Devices require baking, before mounting, if:
Bag seal date
Moisture Level 1
Moisture Level 2
Moisture Level 2a
4. If baking is required,
b) 2a or 2b is not met.
Date and time opened:
reference IPC/JEDEC J-STD-033 for bake procedure.
Floor time see below
If blank, see bar code label
Floor time > 1 Year
Floor time 1 Year
Floor time 4 Weeks
10% RH.
_
<
Moisture Level 4
Moisture Level 5
˚C).
OPTO SEMICONDUCTORS
MOISTURE SENSITIVE
This bag contains
CAUTION
Floor time 72 Hours
Floor time 48 Hours
Floor time 24 Hours
30 ˚C/60% RH.
_
<
LEVEL
If blank, see
bar code label
Barcode label
Dimensions of transportation box in mm
Width Length Height
200 ± 5 mm 195 ± 5 mm 30 ± 5 mm
352 ± 5 mm 352 ± 5 mm 33 ± 5 mm
LT P4SG
19 Version 1.3 | 2018-06-21
Type Designation System
L A P 4 7 B
Chip Technology
3: standard InGaN
6: standard InGaAlP
B: HOP 2000
F: Thinfilm InGaAlP
G: ThinGaN (Thinfilm InGaN)
(Subcon: Sapphire)
K: InGaAlP low current
Encapsulant Type / Lens Properties
7: colorless clear or white volume conversion
(resin encapsulation)
S: Silicone (with or without diffuser)
Wavelength Emission Color Color coordinates according
(λdom typ.) CIE 1931/Emission color:
T: 528 nm true green W: white
Y: 587 nm yellow CB: color on demand blue
A: 617 nm amber
B: 470 nm blue
R: 625 nm red
O: 606 nm orange
P: 560 nm pure green
S: 633 nm super red
G: 570 nm green
L: Light
emitting
diode
Package Type
P: POINTLED
Lead / Package Properties
4: through hole
W: folded leads and UX:3, Ag-LF, w/o
TO2 jetting
LT P4SG
20 Version 1.3 | 2018-06-21
Notes
The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of
lamps and lamp systems). Within the risk grouping system of this IEC standard, the LED speci󰘰ed in this
data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-
sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the
eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light
sources have a high secondary exposure potential due to their blinding e󰘯ect. When looking at bright light
sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-
tion, annoyance, visual impairment, and even accidents, depending on the situation.
Subcomponents of this LED contain, in addition to other substances, metal 󰘰lled materials including silver.
Metal 󰘰lled materials can be a󰘯ected by environments that contain traces of aggressive substances. There-
fore, we recommend that customers minimize LED exposure to aggressive substances during storage, pro-
duction, and use. LEDs that showed visible discoloration when tested using the described tests above did
show no performance deviations within failure limits during the stated test duration. Respective failure limits
are described in the IEC60810.
For further application related informations please visit www.osram-os.com/appnotes
LT P4SG
21 Version 1.3 | 2018-06-21
Disclaimer
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language word-
ings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may
contain dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please 󰘰nd the latest version on the OSRAM OS webside.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest
sales o󰘲ce.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For
packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to
invoice you for any costs incurred.
Product safety devices/applications or medical devices/applications
OSRAM OS components are not developed, constructed or tested for the application as safety relevant
component or for the application in medical devices.
In case Buyer – or Customer supplied by Buyer– considers using OSRAM OS components in product safety
devices/applications or medical devices/applications, Buyer and/or Customer has to inform the local sales
partner of OSRAM OS immediately and OSRAM OS and Buyer and /or Customer will analyze and coordi-
nate the customer-speci󰘰c request between OSRAM OS and Buyer and/or Customer.
LT P4SG
22 Version 1.3 | 2018-06-21
Glossary
1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal
reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of
k = 3).
2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-
tion is not allowed.
3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro-
ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k =
3).
4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an
internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage
factor of k = 3).
5) Thermal Resistance: Rth max is based on statistic values (6
σ
).
6) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data
or calculated correlations of technical parameters can only re󰘱ect statistical 󰘰gures. These do not nec-
essarily correspond to the actual parameters of each single product, which could di󰘯er from the typical
data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical
improvements, these typ. data will be changed without any further notice.
7) Characteristic curve: In the range where the line of the graph is broken, you must expect higher di󰘯er-
ences between single LEDs within one packing unit.
8) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are speci󰘰ed with ±0.1 and
dimensions are speci󰘰ed in mm.
9) Tape and Reel: All dimensions and tolerances are speci󰘰ed acc. IEC 60286-3 and speci󰘰ed in mm.
LT P4SG
23 Version 1.3 | 2018-06-21
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.