Agilent AT-41511, AT-41533
General Purpose, Low Noise
NPN Silicon Bipolar Transistors
Data Sheet
Description
Agilent’s AT-41511 and AT-41533
are general purpose NPN bipolar
transistors that offer excellent
high frequency performance at an
economical price. The AT-41533
uses the 3 lead SOT-23, while the
AT-41511 places the same die in
the lower parasitic 4 lead
SOT-143. Both packages are
industry standard, and compatible
with high volume surface mount
assembly techniques.
The 4 micron emitter-to-emitter
pitch of these transistors yields
high performance products that
can perform a multiplicity of
tasks. The 14 emitter finger
interdigitated geometry yields an
intermediate-sized transistor with
easy to match to impedances, low
noise figure, and moderate power.
Optimized for best performace
from a 5 to 8 volt bias supply,
these transistors are also good
performers at 2.7 V. Applications
include use in wireless systems as
an LNA, gain stage, buffer,
oscillator, or active mixer.
An optimum noise match near
50 ohms at 900 MHz makes these
devices particularly easy to use as
LNAs. Typical amplifier designs
at 900 MHz yield 1 dB noise
figures with 15 dB or more
associated gain at a 5 V, 5 mA
bias, with good gain and noise
figure obtainable at biases as low
as 2 mA.
The AT-415 series bipolar
transistors are fabricated using
Agilent’s 10 GHz fT Self-Aligned-
Transistor (SAT) process. The die
are nitride passivated for surface
protection. Excellent device
uniformity, performance and
reliability are produced by the
use of ion-implantation, self-
alignment techniques, and gold
metalization in the fabrication of
these devices.
BASE EMITTER
EMITTER COLLECTOR
BASE EMITTER
COLLECTOR
415
415
SOT 23 (AT-41533)
SOT 143 (AT-41511)
Outline Drawing
Features
• General Purpose NPN
Bipolar Transistor
• 900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB GA
AT-41533: 1 dB NF, 14.5 dB GA
• Characterized for 3, 5, and
8 Volt Use
• SOT-23 and SOT-143 SMT
Plastic Packages
• Tape-and-Reel Packaging
Option Available
• Lead-free Option Available