IMAGE SENSOR NMOS linear image sensor S3921/S3924 series Voltage output type with current-integration readout circuit and impedance conversion circuit NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3921/S3924 series have a current-integration readout circuit utilizing the video line and an impedance conversion circuit. The output is available in boxcar waveform allowing signal readout with a simple external circuit. The photodiodes of S3921 series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 m. The photodiodes of S3924 series also have a height of 2.5 mm but are arrayed at a spacing of 25 m. The photodiodes are available in 3 different pixel quantities for each series, 128 (S3921-128Q), 256 (S3921-256Q, S3924-256Q) and 512 (S3921-512Q, S3924-512Q) and 1024 (S3924-1024Q). Quartz glass is the standard window material. Features Applications l Built-in current-integration readout circuit utilizing l Multichannel spectrophotometry video line capacitance and impedance conversion l Image readout system circuit (boxcar waveform output) l Wide active area Pixel pitch: 50 m (S3921 series) 25 m (S3924 series) Pixel height: 2.5 mm l High UV sensitivity with good stability l Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l Excellent output linearity and sensitivity spatial uniformity l Low voltage, single power supply operation l Start pulse, clock pulse and video line reset pulse are CMOS logic compatible Equivalent circuit 1 Clock 2 Digital shift register (MOS shift register) End of scan Source follower circuit Vdd Address switch Active photodiode 2.5 mm st Active video Vss Saturation control gate Saturation control drain Address switch Dummy diode b a Dummy video Oxidation silicon 1.0 m Start Clock Active area structure N type silicon Reset V KMPDC0019EA Parameter Supply voltage Input pulse (1, 2, st) voltage Power consumption* 1 Operating temperature* 2 Storage temperature *1: Vdd=5 V, Vr=2.5 V *2: No condensation P type silicon S3921 series: a=50 m, b=45 m S3924 series: a=25 m, b=20 m Absolute maximum ratings Symbol Vdd V P Topr Tstg 1.0 m Reset 400 m Reset switch Value 15 15 10 -40 to +65 -40 to +85 KMPDA0067EA Unit V V mW C C 1 NMOS linear image sensor S3921/S3924 series S h a p e s p e c ific a tio n s S3921S3921S3921128Q 256Q 512Q N u m b e r of pixe ls 128 256 512 P a ck a ge le ng th 3 1 .7 5 4 0 .6 N u m b e r of pin 22 W in d o w m a te ria l* 3 Q u a rtz W eig h t 3 .0 3 .5 *3 : F ib e r o p tic p la te is av a ila b le (e xclu d in g th e S 3 9 2 1 -1 2 8 Q , S 3 9 2 4-2 5 6 Q ). S3924S3924256Q 512Q 256 512 3 1 .7 5 22 Q u a rtz 3 .0 P a ra m e te r S39241024Q 1024 4 0 .6 3 .5 U n it mm g Specifications (Ta=25 C ) P a ra m e te r S ym b o l P ixe l p itc h P ixe l h e ig h t S p e ctra l resp o nse ran g e (1 0 % o f p e a k ) P e a k se n s itiv ity w a v e le n g th P h o to d io d e d ark c urren t* 4 P h o to d io d e ca p a cita nc e * 4 S a tu ra tio n e x po s u re * 4 * 5 S a tu ra tio n c h arg e * 4 p ID Cph E sa t Qsat S a tu ra tio n o u tp u t v olta g e * 4 Vsat M in . - P h o to res p o ns e n on -u n ifo rm ity* 6 PRNU *4 : R e se t V = 2 .5 V, V d d = 5 .0 V, V = 5 .0 V *5 : 2 8 5 6 K , tu n g s te n la m p *6 : 5 0 % o f sa tu ratio n , e xclu d in g th e sta rt pixe l a n d la s t pixe l S 3 9 2 1 se rie s T yp . 50 2 .5 2 0 0 to 1 0 0 0 600 0 .2 20 220 50 1350 (-128Q) 1300 (-256Q) 1100 (-512Q) - M a x. - M in . - 0 .6 3 - S 3 9 2 4 se rie s T yp . 25 2 .5 2 0 0 to 1 0 0 0 600 0 .1 10 220 25 1050 (-256Q) 820 (-512Q ) 570 (-1024Q) - M a x. 0 .3 3 U n it m mm nm nm pA pF m lx * s pC mV mV mV % E le c tric a l c h a ra c te ris tic s (Ta = 2 5 C ) P a ra m e te r S ym b o l H ig h V 1 , V 2 (H ) L o w V 1 , V 2 (L ) H ig h V s (H ) 7 S ta rt p u lse ( st) v olta g e * Low V s (L ) H ig h V r (H ) R e se t p u lse (R e s et ) V o lta g e * 7 Low V r (L ) S o urce follo w er c ircu it drain vo lta ge* 7 Vdd R e se t v o lta g e (R e se t V )* 8 Vr S a tu ra tio n c o ntrol g a te v olta g e Vscg S a tu ra tio n c o ntrol d rain v o lta g e * 8 Vscd tr1, tr2 C lo ck p u lse (1 , 2 ) ris e / fall tim e tf1, tf2 C lo ck p u lse (1 , 2 ) pulse w idth tpw1, tpw2 S ta rt p u lse (st) ris e / fa ll tim e trs, tfs S ta rt p u lse (st) pulse w idth tpws R e se t p u lse ris e / fa ll tim e trr, tfr S ta rt p u lse (st) a nd clo ck p u lse tov (2 ) o v e rla p C lo ck p u lse (2) a n d re se t tovr p u lse (R eset ) o v e rla p C lo ck p u lse (2 ) a n d res e t tdr-2 p u lse (R e se t ) d e la y tim e 9 C lo ck p u lse (1, 2) s p a c e * X1, X 2 C lo ck p u lse (2, R eset ) s p a c e * 9 tsr-2 D a ta rate * 1 0 f C lo ck p u lse ( 1 , 2 ) vo ltag e - M in . 4 .5 0 4 .5 0 4 .5 0 4.5 2 .0 - S 3 9 2 1 se rie s T yp . M a x. 5 10 0 .4 10 V 0 .4 10 V 0 .4 10 V V - 2 .5 V - 2 .0 0 Vr - M in . 4 .5 0 4 .5 0 4 .5 0 4.5 2 .0 - S 3 9 2 4 se rie s T yp . M a x. 5 10 0 .4 10 V 0 .4 10 V 0 .4 10 V V - 2 .5 V - 2 .0 0 Vr - U n it V V V V V V V V V V - - 20 - - 20 - ns - 200 200 - 20 20 - 200 200 - 20 20 - ns ns ns ns - 200 - - 20 0 - - ns - 660 - - 660 - - ns - 50 - - 50 - - ns 500 - ns ns kH z ns ns ns pF pF pF - trf - 2 0 0 0 .1 100 (-128 Q) 150 (-256 Q) 200 (-512 Q) 21 (-128 Q) 36 (-256 Q) 67 (-512 Q) - 500 - trf - 2 0 0 0 .1 100 (-256 Q) 150 (-512 Q) 200 (-1024 Q) 27 (-256 Q) 50 (-512 Q) 100 (-1024 Q) - V id e o d e la y tim e tvd 50 % of saturation* 1 0 C lo ck p u lse ( 1 , 2 ) lin e c a p a cita n ce C 5 V bia s R e se t p u lse (R e s et ) lin e c a p a cita n ce Cr 5 V bia s - 6 - - 6 - pF Cscg 5 V bia s - 12 (-128 Q) 20 (-256 Q) 35 (-512 Q) - - 14 (-256 Q) 24 (-512 Q) 45 (-1024 Q) - pF pF pF Vdd= 5 V 200 200 Vr= 2.5 V *7 : V is in p u t p u lse v olta g e (refer to "R e se t V v o lta g e m a rg in ") *8 : Te r m in a l pin 7 is us e d for b o th R e se t V a n d sa tu ra tio n c o n tro l d ra in v olta g e *9 : trf is th e clo c k p u lse rise o r fall tim e . A clo ck p u ls e sp a ce o f "rise tim e /fall tim e - 2 0 " n s (na n o s ec o n d s) o r m ore sh o u ld b e in p u t if th e clo ck p u ls e ris e o r fall tim e is lo n g er th a n 20 n s. (refe r to "Tim in g ch a rt fo r d riv e r circu it") *1 0 : R es e t V = 2 .5 V, V d d = 5 .0 V, V = 5 .0 V S a tu ra tio n c o ntrol g a te (V s cg ) lin e ca p a cita nc e O u tp u t im p e d a n ce 2 C o n ditio n Zo NMOS linear image sensor S3921/S3924 series Dimensional outlines (unit: mm) S3921-128Q, S3924-256Q S3921-256Q, S3924-512Q Active area 12.8 x 2.5 Active area 6.4 x 2.5 6.4 0.3 3.2 0.3 1 ch 5.0 0.5 1.3 0.2*1 0.51 0.05 2.54 0.13 10.16 0.25 1.4 0.2*2 0.5 0.05*3 3.0 0.3 0.25 25.4 0.13 Chip surface Direction of scan 1.4 0.2*2 1.3 0.2*1 0.51 0.05 5.0 0.5 5.2 0.2 Chip surface 3.0 0.3 Direction of scan 31.75 0.3 0.5 0.05*3 31.75 0.3 5.2 0.2 10.4 0.25 10.4 0.25 1 ch 0.25 2.54 0.13 25.4 0.13 10.16 0.25 *1: Distance from upper surface of quartz window to chip surface *2: Distance from chip surface to bottom of package *3: Window thickness *1: Distance from upper surface of quartz window to chip surface *2: Distance from chip surface to bottom of package *3: Window thickness KMPDA0060ED KMPDA0061ED Pin connection S3921-512Q, S3924-1024Q Active area 25.6 x 2.5 12.8 0.3 2 1 22 NC 1 2 21 NC st 3 20 NC Vss 4 19 NC Vscg 5 18 NC 6 17 NC Reset V (Vscd) 7 16 NC Vss 8 15 NC Active video 9 14 NC Dummy video 10 13 End of scan Vsub 11 12 Vdd 5.2 0.2 10.4 0.25 1 ch Reset 0.5 0.05*3 3.0 0.3 5.0 0.5 0.51 0.05 1.4 0.2*2 Chip surface Direction of scan 1.3 0.2*1 40.6 0.3 0.25 Vss, Vsub and NC should be grounded. 2.54 0.13 25.4 0.13 10.16 0.25 KMPDC0025EA *1: Distance from upper surface of quartz window to chip surface *2: Distance from chip surface to bottom of package *3: Window thickness KMPDA0062ED 3 NMOS linear image sensor Input or output 1, 2 Input (CMOS logic compatible) st Input (CMOS logic compatible) Input Input (CMOS logic compatible) Vss Vscg Reset Reset V Input Vscd Input Active video Output Dummy video Output Vsub - Vdd Input Description Pulses for operating the MOS shift register. The video data rate is equal to the clock pulse frequency since the video output signal is obtained synchronously with the rise of 2 pulse. Pulse for starting the MOS shift register operation. The time interval between start pulses is equal to the signal accumulation time. Connected to the anode of each photodiode. This should be grounded. Used for restricting blooming. This should be grounded. With Reset at high level, the video line is reset at the Reset V voltage. The Reset V terminal connects to each photodiode cathode via the video line when the address turns on. A positive voltage should be applied to the Reset V terminal to use each photodiode at a reverse bias. Setting the Reset V voltage to 2.5 V is recommended when the amplitude of 1, 2 and Reset is 5 V. Terminal pin 7 is used for both Reset V and Vscd. Used for restricting blooming. This should be biased at a voltage equal to "Reset V". Low-impedance video output signal after internal current-voltage conversion. Negative-going output including DC offset. This has the same structure as the active video, but is not connected to photodiodes, so only DC offset is output. Leave this terminal open when not used. Connected to the silicon substrate. This should be grounded. Supply voltage to the internal impedance conversion circuit. A voltage equal to the amplitude of each clock should be applied to this terminal. This should be pulled up at 5 V by using a 10 k resistor. This is a negative going pulse that appears synchronously with the 2 timing right after the last photodiode is addressed. Should be grounded. Output (CMOS logic compatible) End of scan NC - Spectral response (typical example) Output voltage vs. exposure (Ta=25 C) 0.3 101 (Typ. Reset V=2.5 V, Vdd=5.0 V, V =5 V, light source: 2856 K) 0 Output voltage (V) Photo sensitivity (A/W) 10 0.2 0.1 101 10 Saturation voltage Output voltage (V) Terminal S3921/S3924 series -1 10 S3921-128Q S3921-256Q -2 10 S3921-512Q (Typ. Reset V=2.5 V, Vdd=5.0 V, V =5 V, light source: 2856 K) 0 Saturation voltage 10-1 S3924-256Q 10-2 S3924-512Q S3924-1024Q Saturation exposure -3 10 0 200 -4 400 600 800 1000 1200 10 -5 10 -4 10 Wavelength (nm) -3 10 -2 10 -1 10 0 10 Exposure (lx * s) KMPDB0149EA 10 -3 10 -4 Saturation exposure 10-5 10-4 10-3 10-2 10-1 100 Exposure (lx * s) KMPDB0118EA KMPDB0119EA Construction of image sensor The NMOS image sensor consists of a scanning circuit made up of MOS transistors, a photodiode array, and a switching transistor array that addresses each photodiode, all integrated onto a monolithic silicon chip. "Equivalent circuit" shows the circuit of a NMOS linear image sensor. The MOS scanning circuit operates at low power consumption and generates a scanning pulse train by using a start pulse and 2-phase clock pulses in order to turn on each address sequentially. Each address switch is comprised of an NMOS transistor using the photodiode as the source, the video line as the drain and the scanning pulse input section as the gate. 4 The photodiode array operates in charge integration mode so that the output is proportional to the amount of light exposure (light intensity x integration time). Each cell consists of an active photodiode and a dummy diode, which are respectively connected to the active video line and the dummy video line via a switching transistor. Each of the active photodiodes is also connected to the saturation control drain via the saturation control gate, so that the photodiode blooming can be suppressed by grounding the saturation control gate. Applying a pulse signal to the saturation control gate triggers all reset. (See "Auxiliary functions".) NMOS linear image sensor "Active area structure" shows the schematic diagram of the photodiode active area. This active area has a PN junction consisting of an N-type diffusion layer formed on a P-type silicon substrate. A signal charge generated by light input accumulates as a capacitive charge in this PN junction. The N-type diffusion layer provides high UV sensitivity but low dark current. Driver circuit A start pulse st and 2-phase clock pulses 1, 2 are needed to drive the shift register. These start and clock pulses are positive going pulses and CMOS logic compatible. The 2-phase clock pulses 1, 2 can be either completely separated or complementary. However, both pulses must not be "High" at the same time. A clock pulse space (X1 and X2 in "Timing chart for driver circuit") of a "rise time/fall time - 20" ns or more should be input if the rise and fall times of 1, 2 are longer than 20 ns. The 1 and 2 clock pulses must be held at "High" at least Timing chart for driver circuit V V V V 2 Reset End of scan The end of scan (EOS) signal appears in synchronization with the 2 timing right after the last photodiode is addressed, and the EOS terminal should be pulled up at 5 V using a 10 k resistor. Reset V voltage margin 12 tpw 1 1 (H) 1 (L) 2 (H) 2 (L) tpw 2 10 Vr (H) Vr (L) Reset V voltage (V) 1 200 ns. Since the photodiode signal is obtained at the rise of each 2 pulse, the clock pulse frequency will equal the video data rate. The amplitude of start pulse st is the same as the 1 and 2 pulses. The shift register starts the scanning at the "High" level of st, so the start pulse interval is equal to signal accumulation time. The st pulse must be held "High" at least 200 ns and overlap with 2 at least for 200 ns. To operate the shift register correctly, 2 must change from the "High" level to the "Low" level only once during "High" level of st. The timing chart for each pulse is shown in "Timing chart for driver circuit". tpw s V s (H) V s (L) st S3921/S3924 series tvd Active video output End of scan tr s st tf s tr 1 1 tf 2 X2 t ov t ovr td r-2 ts r-2 e ed 6 d en mm res x. Ma co Re 4 0 2 Reset v tV Reset V voltage range 2 tf 1 X1 ge olta 8 Min. 4 5 6 7 8 9 10 Clock pulse amplitude (V) KMPDB0047EA tfr trr KMPDC0026EA Signal readout circuit S3921/S3924 series include a current integration circuit utilizing the video line capacitance and an impedance conversion circuit. This allows signal readout with a simple external circuit. However, a positive bias must be applied to the video line because the photodiode anode of NMOS linear image sensors is at 0 V (Vss). This is done by adding an appropriate pulse to the reset terminal. The amplitude of the reset pulse should be equal to 1, 2 and st. When the reset pulse is at the high level, the video line is set at the Reset V voltage. "Reset V voltage margin" shows the Reset V voltage margin. A higher clock pulse amplitude allows higher Reset V voltage and saturation charge. Conversely, if the Reset V voltage is set at a low level with a higher clock pulse amplitude, the rise and fall times of video output waveform can be shortened. Setting the Reset V voltage to 2.5 V is recommended when the amplitude of 1, 2, st and Reset is 5 V. To obtain a stable output, an overlap between the reset pulse (Reset ) and 2 must be settled. (Reset must rise while 2 is at the high level.) Furthermore, Reset must fall while 2 is at the low level. S3921/S3924 series provide output signals with negativegoing boxcar waveform which include a DC offset of approximately 1 V when Reset V is 2.5 V. If you want to remove the DC offset to obtain the positive-going output, the signal readout circuit and pulse timing shown in "Readout circuit example" and "Timing chart" are recommended. In this circuit, Rs must be larger than 10 k. Also, the gain is determined by the ratio of Rf to Rs, so choose the Rf value that suits your application. 5 NMOS linear image sensor S3921/S3924 series Hamamatsu provides the following driver circuits and related products (sold separately). Product name Type No. Driver circuit Pulse generator Cable Content C7885 Low cost driver circuit C7885G C7885 + C8225-02 Feature Low price Single power supply (+15 V) operation Boxcar waveform output C8225-02 A8226 C7885 series C7883 to C7885 series BNC, length 1 m Readout circuit example Timing chart +5 V +5 V + 10 k st st 1 1 2 2 Reset +2.5 V Vdd EOS Active video Rf EOS Dummy video st OPEN 1 Rs 10 k - 2 Reset + Reset V (Vscd) Vscg + Vss Vsub Reset +15 V NC KMPDC0028EA KMPDC0027EA Anti-blooming function If the incident light intensity is higher than the saturation charge level, even partially, a signal charge in excess of the saturation charge cannot accumulate in the photodiode. This excessive charge flows out into the video line degrading the signal purity. To avoid this problem and maintain the signal purity, applying the same voltage as the Reset V voltage to the saturation control drain and grounding the saturation control gate are effective. If the incident light intensity is extremely high, a positive bias should be applied to the saturation control gate. The larger the voltage applied to the saturation control gate, the higher the function for suppressing the excessive saturation charge will be. However, this voltage also lowers the amount of saturation charge, so an optimum bias voltage should be selected. Auxiliary functions 1) All reset In normal operation, the accumulated charge in each photodiode is reset when the signal is read out. Besides this method that uses the readout line, S3921/S3924 series can reset the photodiode charge by applying a pulse to the saturation control gate. The amplitude of this pulse should be equal to the 1, 2, st, Reset pulses and the pulse width should be longer than 5 s. When the saturation control gate is set at the "High" level, all photodiodes are reset to the saturation control drain potential. Conversely, when the saturation control gate is set at the "Low" level (0 V), the signal charge accumulates in each photodiode without being reset. 2) Dummy video S3921/S3924 series have a dummy video line. Positive-polarity video signals with the DC offset remove can be obtained by differential amplification of the active video line and dummy video line outputs. When not needed, leave this unconnected. Precautions for using NMOS linear image sensors 1) Electrostatic countermeasures NMOS linear image sensors are designed to resist static electrical charges. However, take sufficient cautions and countermeasures to prevent damage from static charges when handling the sensors. 2) Window If dust or grime sticks to the surface of the light input window, it appears as a black blemish or smear on the image. Before using the image sensor, the window surface should be cleaned. Wipe off the window surface with a soft cloth, cleaning paper or cotton swab slightly moistened with organic solvent such as alcohol, and then lightly blow away with compressed air. Do not rub the window with dry cloth or cotton swab as this may generate static electricity. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. Type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(X)" which means tentative specifications or a suffix "(Z)" which means developmental specifications. (c)2010 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 6 Cat. No. KMPD1044E02 Jul. 2010 DN