DSI30-12AS Standard Rectifier VRRM = 1200 V I FAV = 30 A VF = 1.25 V Single Diode Part number DSI30-12AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 (D2Pak) Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Diode for main rectification For single and three phase bridge configurations Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a DSI30-12AS Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C IR reverse current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved max. Unit 1300 V 1200 V TVJ = 25C 40 A VR = 1200 V TVJ = 150C 1.5 mA TVJ = 25C 1.29 V 1.60 V 1.25 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TVJ = 150 C TC = 130 C 1.66 V T VJ = 175 C 30 A TVJ = 175 C 0.82 V 14.1 m d = 0.5 for power loss calculation only R thCH typ. VR = 1200 V rectangular Ptot min. 0.9 K/W K/W 0.25 TC = 25C 160 W t = 10 ms; (50 Hz), sine TVJ = 45C 300 A t = 8,3 ms; (60 Hz), sine VR = 0 V 325 A t = 10 ms; (50 Hz), sine TVJ = 150 C 255 A t = 8,3 ms; (60 Hz), sine VR = 0 V 275 A t = 10 ms; (50 Hz), sine TVJ = 45C 450 As t = 8,3 ms; (60 Hz), sine VR = 0 V 440 As t = 10 ms; (50 Hz), sine TVJ = 150 C 325 As 315 As t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 10 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20130107a DSI30-12AS Package Ratings TO-263 (D2Pak) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 35 Unit A -40 175 C -40 150 C 150 C 1) 2 Weight FC 1) 20 mounting force with clip g 60 N IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Product Marking XXXXXXXXX Part No. IXYS Zyyww Logo Assembly Line Date Code 000000 Assembly Code Ordering Standard Alternative Ordering Number DSI30-12AS DSI30-12AS-TUB Similar Part DSI30-12A DSI30-12AC DSI30-16AS DSI30-16A DSI30-08AS DSI30-08A DSI30-08AC Equivalent Circuits for Simulation I V0 R0 Package TO-220AC (2) ISOPLUS220AC (2) TO-263AB (D2Pak) (2) TO-220AC (2) TO-263AB (D2Pak) (2) TO-220AC (2) ISOPLUS220AC (2) * on die level Delivery Mode Tape & Reel Tube Quantity 800 50 Code No. 507511 470988 Voltage class 1200 1200 1600 1600 800 800 800 T VJ = 175 C Rectifier V 0 max threshold voltage 0.82 R0 max slope resistance * 11 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Marking on Product DSI30-12AS DSI30-12AS V m Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a DSI30-12AS Outlines TO-263 (D2Pak) Dim. W A A1 H D E Supplier Option D1 L1 c2 4 L L2 1 2 3 c 2x e 3x b2 10.92 (0.430) mm (Inches) 2x b E1 9.02 (0.355) W Inches min max 0.160 0.190 typ. 0.004 0.095 0.020 0.039 0.045 0.055 0.016 0.029 0.045 0.055 0.330 0.370 0.315 0.350 0.098 0.380 0.410 0.245 0.335 0,100 BSC 0.169 0.575 0.625 0.070 0.110 0.040 0.066 typ. 0.002 0.0008 All dimensions conform with and/or within JEDEC standard. 1.78 (0.07) 3.05 (0.120) 3.81 (0.150) A A1 A2 b b2 c c2 D D1 D2 E E1 e e1 H L L1 Millimeter min max 4.06 4.83 typ. 0.10 2.41 0.51 0.99 1.14 1.40 0.40 0.74 1.14 1.40 8.38 9.40 8.00 8.89 2.5 9.65 10.41 6.22 8.50 2,54 BSC 4.28 14.61 15.88 1.78 2.79 1.02 1.68 typ. 0.040 0.02 2.54 (0.100) Recommended min. foot print 1 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 2/4 Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a DSI30-12AS Rectifier 60 250 500 50 Hz, 80% VRRM 50 VR = 0 V 400 40 200 IFSM IF 300 TVJ = 45C 30 TVJ = 45C 2 It [A] [A] 20 TVJ = 125C 200 150 TVJ = 150C 2 150C [A s] TVJ = 150C 100 10 TVJ = 25C 0 0.6 0.8 1.0 1.2 1.4 1.6 100 0.001 1.8 0 0.01 0.1 Fig. 1 Forward current versus voltage drop per diode 3 4 5 6 7 8 91 0 t [ms] 2 Fig. 2 Surge overload current 50 RthHA: 0.6 K/W 0.8 K/W 1 K/W 2 K/W 4 K/W 8 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 Ptot 30 2 1 t [s] VF [V] 40 1 Fig. 3 I t versus time per diode 40 30 IF(AV)M DC = 1 0.5 0.4 0.33 0.17 0.08 20 [A] [W] 20 10 10 0 0 0 10 20 30 0 50 100 150 200 0 50 Tamb [C] IF(AV)M [A] 100 150 200 TC [C] Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs. case temperature 1.0 0.8 Constants for ZthJC calculation: 0.6 i Rthi (K/W) ZthJC ti (s) 0.4 1 0.03 0.0004 [K/W] 2 0.08 0.002 3 0.2 0.003 4 0.39 0.03 5 0.2 0.29 0.2 0.0 1 10 100 1000 10000 t [ms] Fig. 6 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130107a Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: DSI30-12AS DSI30-12AS-TUB