1
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Primary Applications
Product Description
Key Features
Measured Performance
70-90 GHz SP4T Switch Flip Chip
Bias conditions, OFF: Vd = 1.35 V, Id = 10 mA, State 5
Typical
ON: Vd = -5V, Id = 0 mA, State 2
RF IN to RF OUT 2
• Frequency Range: 70-90 GHz
•
3.0 dB Typical Flipped Insertion Loss
• 20 dB Nominal Isolation
• 8 dB Typical Thru State Return Loss
• < 5 nsec Switching Speed
• Integrated DC blocking at RF ports
•
Chip dimensions: 1.69 x 1.37 x 0.38 mm
(0.067 x 0.054 x 0.015 in)
• Automotive Transceivers
• E-Band Transceivers
The TriQuint TGS4306-FC is a 70-90 GHz
SP4T Switch. This part is designed using
TriQuint’s proven standard VPIN production
process. The switching speed for TGS4306-
FC is < 5 nsec typically.
The TGS4306-FC, when flipped, provides
a nominal 3.0 dB insertion loss, 8 dB return
loss in the thru state, and 20 dB isolation in
the automotive band.
The TGS4306-FC integrates DC blocking
capacitors on all output ports to reduce the
number of off-chip components.
The TGS4306-FC has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
-40
-30
-20
-10
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
S21 (dB)
ON
OFF
-25
-20
-15
-10
-5
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
Return Loss (dB)
S11
S22
State 2
2
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table II
Recommended Operating Conditions
Truth Table
Table I
Absolute Maximum Ratings 1/
STATE
RF IN
to
RF
OUT 1
RF IN
to
RF
OUT 2
RF IN
to
RF
OUT 3
RF IN
To
RF
OUT 4 Vd1 Vd2 Vd3 Vd4
1ON OFF OFF OFF
-5 V @
0 mA
1.35 V @
10 mA
1.35 V @
10 mA
1.35 V @
10 mA
2OFF ON OFF OFF
1.35 V @
10 mA
-5 V @
0 mA
1.35 V @
10 mA
1.35 V @
10 mA
3OFF OFF ON OFF
1.35 V @
10 mA
1.35 V @
10 mA
-5 V @ 0
mA
1.35 V @
10 mA
4OFF OFF OFF ON
1.35 V @
10 mA
1.35 V @
10 mA
1.35 V @
10 mA
-5 V @
0 mA
5OFF OFF OFF OFF
1.35 V @
10 mA
1.35 V @
10 mA
1.35 V @
10 mA
1.35 V @
10 mA
SYMBOLS PARAMETER VALUES NOTES
Vd1,2,3,4 Maximum Supply Voltage -15 V to 2 V
Id1,2,3,4 Maximum Supply Current 15 mA
Pin Maximum Input Power 27 dBm
Tstg Storage Temperature -65 to 150
0
C
1/ These ratings represent the maximum operating values for this device.
3
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Table III
RF Characterization Table
PARAMETER
THROUGH PATH
IDENTIFICATION TEST CONDITIONS MINIMUM NOMINAL MAXIMUM UNITS
Insertion
Loss (State 3)
RF Input to RF Output 1
RF Input to RF Output 2
RF Input to RF Output 3
RF Input to RF Output 4
F = 76 – 77 GHz 2.5 4.5 dB
Isolation
On/off ratio
(State 3 / 5)
RF Input to RF Output 1
RF Input to RF Output 2
RF Input to RF Output 3
RF Input to RF Output 4
F = 76 – 77 GHz 16 20 dB
Input Return
Loss (State 3)
RF Input to RF Output 1
RF Input to RF Output 2
RF Input to RF Output 3
RF Input to RF Output 4
F = 76 – 77 GHz 5 9 dB
Output Return
Loss (State 3)
RF Input to RF Output 1
RF Input to RF Output 2
RF Input to RF Output 3
RF Input to RF Output 4
F = 76 – 77 GHz 5 9 dB
(TA = 25 °C, Nominal)
Probe Tip Calibration
Id = 6 mA typical
4
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
RF IN to RF OUT 2
-5
-4
-3
-2
-1
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
S21 (dB)
RF IN to RF OUT 2
-40
-30
-20
-10
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
S21 (dB)
Insertion Loss
State 2
State 5
5
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
RF IN to RF OUT 2
-25
-20
-15
-10
-5
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
IRL, ORL (dB)
S11
S22
RF IN to RF OUT2
-25
-20
-15
-10
-5
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
IRL, ORL (dB)
S11
S22
Return Loss
State 2
State 5
6
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
RF IN to RF OUT 4
-5
-4
-3
-2
-1
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
S21 (dB)
RF IN to RF OUT 4
-40
-30
-20
-10
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
S21 (dB)
State 4
State 5
Insertion Loss
7
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Measured Data
RF IN to RF OUT 4
-25
-20
-15
-10
-5
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
IRL, ORL (dB)
S11
S22
RF IN to RF OUT 4
-25
-20
-15
-10
-5
0
70 72 74 76 78 80 82 84 86 88 90
Frequency (GHz)
IRL, ORL (dB)
S11
S22
State 4
State 5
8
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Electrical Schematic
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
9
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Mechanical Drawing
Drawing is for chip face up
Units: millimeters (inches)
Thickness: 0.380 (0.015). Die x, y size tolerance: +/- 0.050 (0.002)
Chip edge to pillar dimensions are shown to center of pillar
Pillar # 1 RF IN 0.075 Ф
Pillar # 5 RF OUT 1 0.075 Ф
Pillar # 9 RF OUT 2 0.075 Ф
Pillar # 12 RF OUT 3 0.075 Ф
Pillar # 16 RF OUT 4 0.075 Ф
Pillar # 3 Vd1 0.075 Ф
Pillar # 7 Vd2 0.075 Ф
Pillar # 14 Vd3 0.075 Ф
Pillar # 18 Vd4 0.075 Ф
Pillar # 20, 21 DC Ground 0.075 Ф
Pillar # 2, 4, 6, 8, 10, 11, 13, 15, 17, 19 RF CPW Ground 0.075 Ф
10
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Recommended Assembly Diagram
TGS4306-FC SP4T Die
TGS4306-FC SP4T data represented in this datasheet was
taken using co-planar waveguide (CPW) transition on the
shown substrate and ground-signal-ground probes.
Bypass capacitors not required.
RF IN
RF OUT 2
RF OUT 1
RF OUT 3
Vd 3
Vd 2
Vd 1
Die is flip-chip soldered to substrate
RF OUT 4
Vd 4
Alumina substrate board
Thickness: 0.015 in.
ε
r
= 9.9
11
TGS4306-FC
November 2009 © Rev B
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Assembly Notes
Component placement and die attach assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• Cu pillars on die are 65 um tall with a 22 um tall Sn solder cap.
• Recommended board metallization is evaporated TiW followed by nickel/gold at pillar attach interface. Ni is the adhesion layer for
the solder and the gold keeps the Ni from oxidizing. The Au should be kept to a minimum to avoid embrittlement; suggested Au /
Sn mass ratio must not exceed 8%.
• Au metallization is not recommended on traces due to solder wicking and consumption concerns. If Au traces are used, a physical
solder barrier must be applied or designed into the pad area of the board. The barrier must be sufficient to keep the solder from
undercutting the barrier.
Reflow process assembly notes:
• Minimum alloying temperatures 245 ˚C.
• Repeating reflow cycles is not recommended due to Sn consumption on the first reflow cycle.
• An alloy station or conveyor furnace with an inert atmosphere such as N2 should be used.
• Dip copper pillars in “no-clean flip chip” flux prior to solder attach. Suggest using a high temperature flux. Avoid exposing entire
die to flux.
• If screen printing flux, use small apertures and minimize volume of flux applied.
• Coefficient of thermal expansion matching between the MMIC and the substrate/board is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
• Suggested reflow will depend on board material and density.
See Triquint Application Note for flip-chip soldering process: TBD
Typical Reflow Profiles for TriQuint Cu / Sn Pillars
Process Sn Reflow
Ramp-up Rate 3 ˚C/sec
Flux Activation Time and Temperature 60 – 120 sec @ 140 – 160 ˚C
Time above Melting Point (245 ˚C) 60 – 150 sec
Max Peak Temperature 300 ˚C
Time within 5 ˚C of Peak Temperature 10 – 20 sec
Ramp-down Rate 4 – 6 ˚C/sec
Ordering Information
Part Package Style
TGA4306-FC GaAs MMIC Die
