APTGT600U170D4G
APTGT600U170D4G – Rev 1 March, 2006
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Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 1100
IC Continuous Collector Current TC = 80°C 600
ICM Pulsed Collector Current TC = 25°C 1200
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 2900 W
RBSOA Reverse Bias Safe Operation Area Tj = 125°C 1200A@1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
3
5
2
1
53
4
12
VCES = 1700V
IC = 600A @ Tc = 80°C
Applicatio
n
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequenc y up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Low stray ind uc tance
• High level of integration
• Kelvin emitter for easy drive
• Low stray ind uc tance
- M6 connectors for power
- M4 connectors for signal
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Single switch
Trench + Field Stop IGBT®
Power Modul
e
APTGT600U170D4G
APTGT600U170D4G – Rev 1 March, 2006
APT website
–
http:/
/
www.advancedpower.com 2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 1 mA
Tj = 25°C 2.0 2.4
VCE(sat) Collector Emitter saturation Voltage VGE = 15V
IC = 600A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 24 mA 5.2 5.8 6.4 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 800 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 51
Cres Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz 1.8 nF
Td(on) Tur n-o n Delay Ti me 280
Tr Rise Time 100
Td(off) Turn-off Delay Time 850
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 600A
RG = 2.4Ω 150
ns
Td(on) Tur n-o n Delay Ti me 330
Tr Rise Time 100
Td(off) Turn-off Delay Time 1000
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 600A
RG = 2.4Ω 230
ns
Eon Turn On Energy Tj = 125°C 200
Eoff Turn Off Energy
VGE = ±15V
VBus = 900V
IC = 600A
RG = 2.4Ω Tj = 125°C 190
mJ
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 750
IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 1000 µA
IF DC forward current Tc=80°C 600 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 600A
VGE = 0V Tj = 125°C 1.9 V
Tj = 25°C 85
Er Reverse Recovery Energy
Tj = 125°C 145
mJ
Tj = 25°C 450
trr Reverse Recovery Time Tj = 125°C 600 ns
Tj = 25°C 150
Qrr Reverse Recovery Charge
IF = 600A
VR = 900V
di/dt =5200A/µs
Tj = 125°C 250
µC
APTGT600U170D4G
APTGT600U170D4G – Rev 1 March, 2006
APT website
–
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www.advancedpower.com 3 - 5
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.044
RthJC Junction to Case Thermal Resistance Diode 0.065 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
M4 1 2
Torque Mounting torque M6 3 5
N.m
Wt Package Weight 420 g
D4 Package outline (dimensions in mm)
APTGT600U170D4G
APTGT600U170D4G – Rev 1 March, 2006
APT website
–
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/
www.advancedpower.com 4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C TJ=125°C
0
200
400
600
800
1000
1200
01234
VCE (V)
IC (A)
Output Characteristics
VGE
=15V
VGE=13V
VGE=19V
VGE=9V
0
200
400
600
800
1000
1200
012345
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
0
200
400
600
800
1000
1200
567891011
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Er Er
0
100
200
300
400
500
0 200 400 600 800 1000
IC (A)
E (mJ)
VCE = 900V
VGE = 15V
RG = 2. 4 Ω
TJ
= 125°C
Eon
Eoff
Er
0
200
400
600
800
1000
0 5 10 15 20 25 30
Gate Resistan ce (oh ms)
E (mJ)
VCE = 900V
VGE =15V
IC = 600A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
200
400
600
800
1000
1200
1400
0 400 800 1200 1600
VCE (V)
IC (A)
VGE=15V
TJ=125°C
R
G
=2.4 Ω
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT600U170D4G
APTGT600U170D4G – Rev 1 March, 2006
APT website
–
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/
www.advancedpower.com 5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
200
400
600
800
1000
1200
00.511.522.53
VF (V)
IF (A)
hard
switching
ZCS
ZVS
0
5
10
15
20
25
30
0 200 400 600 800
IC (A)
Fmax, Operating Frequency (kHz)
VCE=900V
D=50%
RG=2.4 Ω
TJ=125°C
TC=75°C
Operating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
APT res e rves the rig ht to c ha nge, wit ho ut not ice , the s pe cificatio ns and info rmatio n co nta i ne d he re in
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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