Issue 1 - August 2007 1 www.zetex.com
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ZXTN5551FL
160V, SOT23, NPN High voltage transistor
Summary
BVCEO > 160V
BVEBO > 6V
IC(cont) = 600mA
PD = 330mW
Complementary part number ZXTP5401FL
Description
A high voltage NPN transistor in a small outline surface mount package.
Features
•160V rating
• SOT23 package
Applications
• High voltage amplification
Ordering information
Device marking
N51
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXTN5551FLTA 7 8 3000
C
E
B
C
E
B
Pinout - top view
ZXTN5551FL
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© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
Parameter Symbol Limit Unit
Collector-base voltage VCBO 180 V
Collector-emitter voltage VCEO 160 V
Emitter-base voltage VEBO 6V
Continuous collector current(a) IC600 mA
Power dissipation at Tamb =25°C(a) PD 330 mW
Linear derating factor 2.64 mW/°C
Operating and storage temperature range Tj, Tstg -55 to 150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient(a) R⍜JA 379 °C/W
ZXTN5551FL
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Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown
voltage
BVCBO 180 270 V IC = 100A
Collector-emitter
breakdown voltage (base
open)
BVCEO 160 200 V IC = 1mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%.
Emitter-base breakdown
voltage
BVEBO 67.85 VI
E = 10A
Collector cut-off current ICBO <1 50 nA VCB = 120V
50 AV
CB = 120V, Tamb= 100°C
Collector-emitter saturation
voltage
VCE(sat) 65 150 V IC = 10mA, IB = 1mA(*)
115 200 V IC = 50mA, IB = 5mA(*)
Base-emitter saturation
voltage
VBE(sat) 760 1000 mV IC = 10mA, IB = 1mA(*)
840 1200 mV IC = 50mA, IB = 5mA(*)
Static forward current
transfer ratio
hFE 80 135 IC = 1mA, VCE = 5V(*)
80 145 250 IC = 10mA, VCE = 5V(*)
30 65 IC = 50mA, VCE = 5V(*)
Transition frequency fT130 MHz IC = 10mA, VCE = 10V,
f = 100MHz
Output capacitance COBO 6pF
VCB = 10V, f = 1MHz(*)
Small signal hFE 50 260 IC = 10mA, VCE = 10V,
f=1kHz (†)
(†) Periodic sample test only
Delay time t(d) 95 ns VCC = 10V, IC = 10mA, IB1 =
IB2= 1mA
Rise time t(r) 64 ns
Storage time t(s) 1256 ns
Fall time t(f) 140 ns
ZXTN5551FL
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© Zetex Semiconductors plc 2007
Package outline - SOT23
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Dim. Millimeters Inches Dim. Millimeters Inches
Min. Max. Min. Max. Min. Max. Min. Max.
A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM
A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104
b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055
c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236
D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024
e0.95 NOM0.037 NOM-----
E
e
L
e1
D
A
c
E1
L1
A1
b
3 leads
ZXTN5551FL
Issue 1 - August 2007 8 www.zetex.com
© Zetex Semiconductors plc 2007
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© 2007 Published by Zetex Semiconductors plc
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