Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
APPLICATION
DC chopper, DC motor controllers, Inverters
QM75E2Y/E3Y-H
94
80
(7) (7)
2020 27
φ6.5
12
34
13 10.510.5
E
1
B
1
M5
Tab#110,
t=0.5
6.5
22.5
(8)
31
C
1
A
1
E
1
B
1
E
1
D
1
D
2
D
2
D
1
E
1
E
1
B
1
C
1
K
1
LABEL
(E
2
Y)
(E
3
Y)
•ICCollector current .......................... 75A
•VCEX Collector-emitter voltage ........... 600V
•hFE DC current gain............................... 75
•Insulated Type
•UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
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Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Transistor part including D1, Tj=25°C)
Symbol
VCEX (SUS)
VCEX
VCBO
VEBO
IC
–IC
PC
IB
–ICSM
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Conditions
IC=1A, VEB=2V
VEB=2V
Emitter open
Collector open
DC
DC (forward diode current)
TC=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
600
600
600
7
75
75
350
4.5
750
Unit
V
V
V
V
A
A
W
A
A
ABSOLUTE MAXIMUM RATINGS (Diode part (D2), Tj=25°C)
Symbol
VRRM
VRSM
VR (DC)
IDC
IFSM
I2t
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
DC current
Surge (non-repetitive) forward current
I2t for fusing
Conditions
DC circuit, resistive, inductive load
Peak value of one cycle of 60Hz (half wave)
Value for one cycle of surge current
Ratings
600
720
480
75
1500
9.45 × 103
Unit
V
V
V
A
A
A2s
ABSOLUTE MAXIMUM RATINGS (Common)
Symbol
Tj
Tstg
Viso
—
—
Parameter
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Charged part to case, AC for 1 minute
Main terminal screw M5
Mounting screw M6
Typical value
Ratings
–40~150
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
210
Unit
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/W
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
75/100
—
—
—
—
—
—
Symbol
ICEX
ICBO
IEBO
VCE (sat)
VBE (sat)
–VCEO
hFE
ton
ts
tf
Rth (j-c) Q
Rth (j-c) R
Rth (c-f)
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
Switching time
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Test conditions
VCE=600V, VEB=2V
VCB=600V, Emitter open
VEB=7V
IC=75A, IB=1A
–IC=75A (diode forward voltage)
IC=75A, VCE=2V/5V
VCC=300V, IC=75A, IB1=–IB2=1.5A
Transistor part
Diode part
Conductive grease applied
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.0
2.5
1.85
—
2.5
12
3.0
0.35
1.3
0.15
ELECTRICAL CHARACTERISTICS (Transistor part including D1, Tj=25°C)
http://store.iiic.cc/
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Diode part (D2), Tj=25°C)
Symbol
IRRM
VFM
trr
Qrr
Rth (j-c)
Rth (c-f)
Parameter
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Test conditions
VR=VRRM, Tj=150°C
IF=75A
IF=75A, di/dt=–150A/µs, VR=300V, Tj=150°C
Junction to case
Conductive grease applied (case to fin)
Unit
mA
V
µs
µC
°C/W
°C/W
Limits
Min.
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
Max.
1.0
1.5
0.9
30
0.6
0.15
PERFORMANCE CURVES
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
BASE CURRENT IB (A)
SATURATION VOLTAGE VCE (sat), VBE (sat) (V)
COLLECTOR CURRENT IC (A)BASE-EMITTER VOLTAGE VBE (V)
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
1
10
0
10
7
5
4
3
2
–1
10
7
5
4
3
2
1.0 1.4 1.8 2.2 2.6 3.0
VCE=2.0V
Tj=25°C
200
160
120
80
40
001 2 3 4 5
Tj=25°C
IB=2.0AIB=1.5A
IB=1.0A
IB=0.5A
3
10
7
5
4
3
2
2
10
7
5
4
3
20
10 23457 1
10 23457 2
10
2
VCE=5.0V
Tj=25°C
Tj=125°C
VCE=2.0V
1
10
7
5
4
3
2
0
10
7
5
4
3
2
–1
10 1
10 23457 2
10 23457 3
10
Tj=25°C
Tj=125°C
VBE(sat)
VCE(sat)
IB=1A
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Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
SWITCHING TIME ton, ts, tf (µs)
BASE CURRENT IB (A) COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
REVERSE BIAS SAFE OPERATING AREA
SWITCHING TIME ts, tf (µs)
COLLECTOR-EMITTER VOLTAGE VCE (V)BASE REVERSE CURRENT –IB2 (A)
FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A.
COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (°C)
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT IC (A)DERATING FACTOR (%)
3
10
2
10
1
10
0
10
0
10
1
10
2
10
3
10
1
10
0
10
–1
10
–2
10
100
80
60
40
20
00 20 60 100 120 16040 80 140
10
30
50
70
90
7
0
10
1
10
7
5
4
3
2
0
10
7
5
4
345 2 3457
1
10
2
–1
10
2
2
3
t
f
T
j
=25°C
T
j
=125°C
I
C
=75A
I
B1
=1.5A
V
CC
=300V
t
s
160
00 200 400 600 800
120
80
40
T
j
=125°C
I
B2
=–2A
–5A
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
100µs
t
w
=50µs
1ms
DC
10ms
500µs
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0
10
23457
1
10
23457
2
10
2
I
B1
=–I
B2
=1.5A
V
CC
=300V
T
j
=25°C
T
j
=125°C
t
s
t
on
t
f
753275327532
0
5
444
4
3
2
1
T
j
=25°C
T
j
=125°C
I
C
=30A
I
C
=75A
I
C
=50A
I
C
=100A
NON-REPETITIVE
T
C
=25°C
COLLECTOR
DISSIPATION
SECOND BREAK-
DOWN AREA
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Feb.1999
PERFORMANCE CURVES (Diode part (D1))
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
Zth (j-c) (°C/W)
TIME (s)
FORWARD CHARACTERISTICS
(TYPICAL)
MAXIMUM SURGE CURRENT
FORWARD CURRENT IF (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
FORWARD VOLTAGE VF (A)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
FORWARD CURRENT IF (A) TIME (s)
Irr (A), Qrr (µc)
SURGE FORWARD CURRENT IFSM (A)Zth (j-c) (°C/W)
trr (µs)
–1
10
1
10
0
10
1
10
0
10
–1
10
–2
10
–3
10
0
10
1
10
0
10
–1
10
–2
10
–3
10
0
10
2
10
1
10
7
5
4
3
2
0
10
7
5
4
3
2
0 0.4 0.8 1.2 1.6 2.0
T
j
=25°C
T
j
=125°C
2
10
1
10 75432
0
10 75432
0
800
100
200
300
500
400
600
700
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
0
10
23457
1
10
23457
2
10
T
j
=25°C
T
j
=125°C
V
CC
=300V
I
B1
=–I
B2
=1.5A
I
rr
Q
rr
t
rr
5
753275327532
0.4
0.8
1.2
1.6
2.0
0
327532
444
44
753275327532
0.1
0.2
0.3
0.4
0.5
0
7532
444
4
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Feb.1999
Irr (A), Qrr (µC)
SURGE FORWARD CURRENT IFSM (A)
REVERSE RECOVERY CHARACTERISTICS
(VS. di/dt) (TYPICAL)
MAXIMUM SURGE CURRENT REVERSE RECOVERY CHARACTERISTICS
(VS. IF) (TYPICAL)
CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A)
di/dt (A/µs)
Irr (A), Qrr (µC)
MITSUBISHI TRANSISTOR MODULES
QM75E2Y/E3Y-H
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM FORWARD CHARACTERISTIC
FORWARD CURRENT IF (A)
FORWARD VOLTAGE VF (V)
PERFORMANCE CURVES (Diode part (D2))
Zth (j–c) (°C/W)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC
TIME (s)
trr (µs)
trr (µs)
2
10
1
10
0
10
0
10
1
10
2
10
3
10
–1
10
–1
10
2
10
1
10
0
10
2
10
1
10
0
10
2
10
1
10
0
10
–1
10
3
10
2
10
–1
10
0
10
1
10
1
10
0
10
–3
10
–2
10
–1
10
0
10
0
10
1
10
2
10
3
10
2
10
1
10 75432
0
10 75432
0
400
800
1200
1600
2000
200
600
1000
1400
1800
7
5
3
2
7
5
3
2
7
5
3
2
0.6 1.0 1.4 1.8 2.2
T
j
=25°C
753275327532
0.2
0.4
0.6
0.8
1.0
0
5327532
444
44 7
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
I
rr
t
rr
T
j
=25°C
T
j
=150°C
V
R
=300V
di/dt=–150A/µs
Q
rr
753275327532
7
5
3
2
7
5
3
2
7
5
3
2
444
T
j
=25°C
T
j
=150°C
V
R
=300V
I
F
=75A
I
rr
Q
rr
t
rr
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