K4T1G084QF-BCE60 - Samsung Semiconductor Division

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K4T1G044QF

K4T1G084QF

Rev. 1.1, Aug. 2010

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datasheet

K4T1G164QF

1Gb F-die DDR2 SDRAM

60FBGA/84FBGA with Lead-Free & Halogen-Free

(RoHS compliant)

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

Revision History

Revision No. History Draft Date Remark Editor

1.0 - Final Spec. Release May. 2010 - S.H.Kim

1.1 - Changed IDD current spec.(IDD3P-S/IDD3N/IDD4W) Aug. 2010 - S.H.Kim

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K4T1G164QF datasheet DDR2 SDRAM
Rev. 1.1
K4T1G084QF
K4T1G044QF
Table Of Contents
1Gb F-die DDR2 SDRAM
Ordering Information ..................................................................................................................................................... 4
Key Features................................................................................................................................................................. 4
Package pinout/Mechanical Dimension & Addressing.................................................................................................. 5
1 x4 Package Pinout (Top view) : 60ball FBGA Package .......................................................................................... 5
2 x8 Package Pinout (Top view) : 60ball FBGA Package .......................................................................................... 6
3 x16 Package Pinout (Top view) : 84ball FBGA Package ........................................................................................ 7
4 FBGA Package Dimension (x4/x8).......................................................................................................................... 8
5 FBGA Package Dimension (x16)............................................................................................................................. 9
Input/Output Functional Description.............................................................................................................................. 10
DDR2 SDRAM Addressing ........................................................................................................................................... 11
Absolute Maximum Ratings .......................................................................................................................................... 12
AC & DC Operating Conditions..................................................................................................................................... 12
1 Recommended DC operating Conditions (SSTL_1.8)............................................................................................. 12
2 Operating Temperature Condition ........................................................................................................................... 13
3 Input DC Logic Level ............................................................................................................................................... 13
4 Input AC Logic Level ............................................................................................................................................... 13
5 AC Input Test Conditions......................................................................................................................................... 13
6 Differential input AC logic Level............................................................................................................................... 14
7 Differential AC output parameters ........................................................................................................................... 14
ODT DC electrical characteristics ................................................................................................................................. 14
OCD default characteristics .......................................................................................................................................... 15
IDD Specification Parameters and Test Conditions.................................................................................................... 16
DDR2 SDRAM IDD Spec Table.................................................................................................................................. 18
Input/Output capacitance ............................................................................................................................................ 20
Electrical Characteristics & AC Timing for DDR2-800/667 ......................................................................................... 20
1 Refresh Parameters by Device Density................................................................................................................. 20
2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................ 20
3 Timing Parameters by Speed Grade ..................................................................................................................... 21
General notes, which may apply for all AC parameters .............................................................................................. 23
Specific Notes for dedicated AC parameters .............................................................................................................. 25

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

1. Ordering Information

NOTE :

1. Speed bin is in order of CL-tRCD-tRP.

2. 12digit, "B" stands for flip chip FBGA PKG.

2. Key Features

Organization DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Package

256Mx4 K4T1G044QF-BCE7 K4T1G044QF-BCF7 K4T1G044QF-BCE6 60 FBGA

128Mx8 K4T1G084QF-BCE7 K4T1G084QF-BCF7 K4T1G084QF-BCE6 60 FBGA

64Mx16 K4T1G164QF-BCE7 K4T1G164QF-BCF7 K4T1G164QF-BCE6 84 FBGA

Speed DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Units

CAS Latency 5 6 5 tCK

tRCD(min) 12.5 15 15 ns

tRP(min) 12.5 15 15 ns

tRC(min) 57.5 60 60 ns

• JEDEC standard VDD = 1.8V ± 0.1V Power Supply

•V

DDQ = 1.8V ± 0.1V

• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin

• 8 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5, 6

• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5

• Write Latency(WL) = Read Latency(RL) -1

• Burst Length: 4 , 8(Interleave/nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an

optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination

• Special Function Support

- 50ohm ODT

- High Temperature Self-Refresh rate enable

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE < 95 °C

• All of products are Lead-Free, Halogen-Free, and RoHS compliant

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit

x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous

device achieves high speed double-data-rate transfer rates of up to 800Mb/

sec/pin (DDR2-800) for general applications.

The chip is designed to comply with the following key DDR2 SDRAM fea-

tures such as posted CAS with additive latency, write latency = read latency

- 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.

All of the control and address inputs are synchronized with a pair of exter-

nally supplied differential clocks. Inputs are latched at the crosspoint of dif-

ferential clocks (CK rising and CK falling). All I/Os are synchronized with a

pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-

ion. The address bus is used to convey row, column, and bank address

information in a RAS/CAS multiplexing style. For example, 1Gb(x8) device

receive 14/10/3 addressing.

The 1Gb DDR2 device operates with a single 1.8V ± 0.1V power supply

and 1.8V ± 0.1V VDDQ.

The 1Gb DDR2 device is available in 60ball FBGA(x4/x8) and in 84ball

FBGA(x16).

NOTE :

1. This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device Operation & Timing Dia-

gram”.

2. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

3. Package pinout/Mechanical Dimension & Addressing

3.1 x4 Package Pinout (Top view) : 60ball FBGA Package

NOTE : VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD,VDDQ, VSS, and VSSQ.

1 2 3 4 5 6 7 8 9

AVDD NC VSS VSSQ DQS VDDQ

BNC VSSQ DM DQS VSSQ NC

CVDDQ DQ1 VDDQ VDDQ DQ0 VDDQ

DNC VSSQ DQ3 DQ2 VSSQ NC

EVDDL VREF VSS VSSDL CK VDD

FCKE WE RAS CK ODT0

GBA2 BA0 BA1 CAS CS

H A10/AP A1 A2 A0 VDD

JVSS A3 A5 A6 A4

KA7 A9 A11 A8 VSS

LVDD A12 NC NC A13

Populated ball

Ball not populated

Ball Locations (x4)

Top view

(See the balls through package)

1234 89567

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

3.2 x8 Package Pinout (Top view) : 60ball FBGA Package

NOTE :

1. Pins B3 and A2 have identical capacitances as pins B7 and A8.

2. For a Read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS & DQS and input data masking

function is disabled.

3. The function of DM or RDQS/RDQS is enabled by EMRS command.

4. VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD,VDDQ, VSS, and VSSQ.

1 2 3 4 5 6 7 8 9

AVDD NU/RDQS VSS VSSQ DQS VDDQ

BDQ6 VSSQ DM/RDQS DQS VSSQ DQ7

CVDDQ DQ1 VDDQ VDDQ DQ0 VDDQ

DDQ4 VSSQ DQ3 DQ2 VSSQ DQ5

EVDDL VREF VSS VSSDL CK VDD

FCKE WE RAS CK ODT0

GBA2 BA0 BA1 CAS CS

H A10/AP A1 A2 A0 VDD

JVSS A3 A5 A6 A4

KA7 A9 A11 A8 VSS

LVDD A12 NC NC A13

Populated ball

Ball not populated

Ball Locations (x8)

Top view

(See the balls through package)

1234 89567

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

3.3 x16 Package Pinout (Top view) : 84ball FBGA Package

NOTE : VDDL and VSSDL are power and ground for the DLL. It is recommended that they be isolated on the device from VDD, VDDQ, VSS, and VSSQ.

1 2 3 4 5 6 7 8 9

AVDD NC VSS VSSQ UDQS VDDQ

BDQ14 VSSQ UDM UDQS VSSQ DQ15

CVDDQ DQ9 VDDQ VDDQ DQ8 VDDQ

DDQ12 VSSQ DQ11 DQ10 VSSQ DQ13

EVDD NC VSS VSSQ LDQS VDDQ

FDQ6 VSSQ LDM LDQS VSSQ DQ7

GVDDQ DQ1 VDDQ VDDQ DQ0 VDDQ

HDQ4 VSSQ DQ3 DQ2 VSSQ DQ5

JVDDL VREF VSS VSSDL CK VDD

KCKE WE RAS CK ODT

LBA2 BA0 BA1 CAS CS

M A10/AP A1 A2 A0 VDD

NVSS A3 A5 A6 A4

PA7 A9 A11 A8 VSS

RVDD A12 NC NC NC

Populated ball

Ball not populated

Ball Locations (x16)

Top view

(See the balls through package)

1234 89567

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

3.4 FBGA Package Dimension (x4/x8)

9.50 ± 0.10

7.50 ± 0.10

#A1

0.37±0.05

1.10±0.10

(0.30)

# A1 INDEX MARK

(0.60)

9.50 ± 0.10

0.80 x 10 = 8.00

0.80

7.50 ± 0.10

1.60

0.80 x 8 = 6. 40

4.00

0.80

0.10MAX

3.20

0.80

987654321

60-∅0.48 Solder ball

0.2 MAB

(Post reflow 0.50 ± 0.05)

MOLDING AREA

(Datum A)

(Datum B)

Units : Millimeters

BOTTOM VIEW

TOP VIEW

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

3.5 FBGA Package Dimension (x16)

12.50 ± 0.10

7.50 ± 0.10

#A1

0.37±0.05

1.10±0.10

(0.30)

# A1 INDEX MARK

(0.60)

12.50 ± 0.10

0.80 x 14 = 11.20

0.80

7.50 ± 0.10

1.60

0.80 x 8 = 6. 40

5.60

0.80

0.10MAX

3.20

0.80

987654321

84-∅0.48 Solder ball

0.2 MAB

(Post reflow 0.50 ± 0.05)

MOLDING AREA

(Datum A)

(Datum B)

Units : Millimeters

BOTTOM VIEW

TOP VIEW

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

4. Input/Output Functional Description

BA0 - BA2 Input

Bank Address Inputs: BA0, BA1 and BA2 define to which bank an Active, Read, Write or Precharge command is

being applied. Bank address also determines if the mode register or extended mode register is to be accessed during

a MRS or EMRS cycle.

Symbol Type Function

CK, CK Input

Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the

positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both

directions of crossing).

CKE Input

Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and out-

put drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active

Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry.

CKE is asynchronous for self refresh exit. After VREF has become stable during the power on and initialization

sequence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF

must be maintained to this input. CKE must be maintained high throughout read and write accesses. Input buffers,

excluding CK, CK, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during

self refresh.

CS Input Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on sys-

tems with multiple Ranks. CS is considered part of the command code.

ODT Input

On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When

enabled, ODT is only applied to each DQ, DQS, DQS, RDQS, RDQS, and DM signal for x4/x8 configurations. For x16

configuration ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin will be

ignored if the Extended Mode Register (EMRS(1)) is programmed to disable ODT.

RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.

DM Input

Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coinci-

dent with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only,

the DM loading matches the DQ and DQS loading. For x8 device, the function of DM or RDQS/RDQS is enabled by

EMRS command.

A0 - A13 Input

Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit for

Read/Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a

Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If

only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code dur-

ing Mode Register Set commands.

DQ Input/Out-

put Data Input/ Output: Bi-directional data bus.

DQS, (DQS)

(LDQS), (LDQS)

(UDQS), (UDQS)

(RDQS), (RDQS)

Input/Out-

put

Data Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write data. For the

x16, LDQS corresponds to the data on DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. For the x8, an RDQS

option using DM pin can be enabled via the EMRS(1) to simplify read timing. The data strobes DQS, LDQS, UDQS,

and RDQS may be used in single ended mode or paired with optional complementary signals DQS, LDQS, UDQS, and

RDQS to provide differential pair signaling to the system during both reads and writes. An EMRS(1) control bit enables

or disables all complementary data strobe signals.

In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)

x4 DQS/DQS

x8 DQS/DQS if EMRS(1)[A11] = 0

x8 DQS/DQS, RDQS/RDQS, if EMRS(1)[A11] = 1

x16 LDQS/LDQS and UDQS/UDQS

"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)

x4 DQS

x8 DQS if EMRS(1)[A11] = 0

x8 DQS, RDQS, if EMRS(1)[A11] = 1

x16 LDQS and UDQS

NC No Connect: No internal electrical connection is present.

VDD / VDDQ Supply Power Supply: 1.8V +/- 0.1V, DQ Power Supply: 1.8V +/- 0.1V

VSS / VSSQ Supply Ground, DQ Ground

VDDL Supply DLL Power Supply: 1.8V +/- 0.1V

VSSDL Supply DLL Ground

VREF Supply Reference voltage

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

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K4T1G044QF

5. DDR2 SDRAM Addressing

1Gb Addressing

* Reference information: The following tables are address mapping information for other densities.

256Mb

512Mb

2Gb

4Gb

Configuration 256Mb x4 128Mb x 8 64Mb x16

# of Bank 8 8 8

Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 ~ A13 A0 ~ A13 A0 ~ A12

Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9

Configuration 64Mb x4 32Mb x 8 16Mb x16

# of Bank 4 4 4

Bank Address BA0,BA1 BA0,BA1 BA0,BA1

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 ~ A12 A0 ~ A12 A0 ~ A12

Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A8

Configuration 128Mb x4 64Mb x 8 32Mb x16

# of Bank 4 4 4

Bank Address BA0,BA1 BA0,BA1 BA0,BA1

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 ~ A13 A0 ~ A13 A0 ~ A12

Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9

Configuration 512Mb x4 256Mb x 8 128Mb x16

# of Bank 8 8 8

Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 ~ A14 A0 ~ A14 A0 ~ A13

Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9

Configuration 1 Gb x4 512Mb x 8 256Mb x16

# of Bank 8 8 8

Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2

Auto precharge A10/AP A10/AP A10/AP

Row Address A0 - A15 A0 - A15 A0 - A14

Column Address A0 - A9,A11 A0 - A9 A0 - A9

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

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6. Absolute Maximum Ratings

NOTE :

1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions

for extended periods may affect reliability.

2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.

3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than 500mV, VREF

may be equal to or less than 300mV.

4. Voltage on any input or I/O may not exceed voltage on VDDQ.

7. AC & DC Operating Conditions

7.1 Recommended DC operating Conditions (SSTL_1.8)

NOTE : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD.

1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting

device and VREF is expected to track variations in VDDQ.

2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).

3. VTT of transmitting device must track VREF of receiving device.

4. AC parameters are measured with VDD, VDDQ and VDDL tied together.

Symbol Parameter Rating Units NOTE

VDD Voltage on VDD pin relative to VSS - 1.0 V ~ 2.3 V V 1

VDDQ Voltage on VDDQ pin relative to VSS - 0.5 V ~ 2.3 V V 1

VDDL Voltage on VDDL pin relative to VSS - 0.5 V ~ 2.3 V V 1

VIN, VOUT Voltage on any pin relative to VSS - 0.5 V ~ 2.3 V V 1

TSTG Storage Temperature -55 to +100 °C 1, 2

Symbol Parameter Rating Units NOTE

Min. Typ. Max.

VDD Supply Voltage 1.7 1.8 1.9 V

VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 4

VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 4

VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 1,2

VTT Termination Voltage VREF-0.04 VREF VREF+0.04 V 3

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

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K4T1G044QF

7.2 Operating Temperature Condition

NOTE :

1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard.

2. At 85 - 95 °C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self refresh mode at this

temperature range, an EMRS command is required to change internal refresh rate.

7.3 Input DC Logic Level

Symbol Parameter Min. Max. Units NOTE

VIH(DC) DC input logic high VREF + 0.125 VDDQ + 0.3 V

VIL(DC) DC input logic low - 0.3 VREF - 0.125 V

7.4 Input AC Logic Level

Symbol Parameter

DDR2-667, DDR2-800

NOTE

Min. Max.

VIH(AC) AC input logic high VREF + 0.200 V

VIL(AC) AC input logic low VREF - 0.200 V

Figure 1. AC Input Test Signal Waveform

NOTE :

1. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-

tude allowed for overshoot and undershoot.

7.5 AC Input Test Conditions

NOTE :

1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.

2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for falling edges

as shown in the below figure.

3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions.

Symbol Parameter Rating Units NOTE

TOPER Operating Temperature 0 to 95 °C 1, 2

Symbol Condition Value Units NOTE

VREF Input reference voltage 0.5 * VDDQ V1

VSWING(MAX) Input signal maximum peak to peak swing 1.0 V 1

SLEW Input signal minimum slew rate 1.0 V/ns 2, 3

VIH(AC) min

VIH(DC) min

VREF

VIL(DC) max

VIL(AC) max

VSS

delta TRdelta TF

VREF - VIL(AC) max

delta TF

Falling Slew = Rising Slew =

VIH(AC) min - VREF

delta TR

Figure 2. Differential signal levels

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K4T1G164QF datasheet DDR2 SDRAM

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7.6 Differential input AC logic Level

Symbol Parameter Min. Max. Units NOTE

VID(AC) AC differential input voltage 0.5 VDDQ + 0.6 V 1

VIX(AC) AC differential cross point voltage 0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175 V 2

NOTE :

1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the com-

plementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to VIH (AC) - VIL(AC).

2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC) indicates the voltage

at which differential input signals must cross.

3. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-

tude allowed for overshoot and undershoot.

7.7 Differential AC output parameters

Symbol Parameter Min. Max. Units NOTE

VOX(AC) AC differential cross point voltage 0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1

NOTE :

1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ . VOX(AC) indicates the

voltage at which differential output signals must cross.

8. ODT DC electrical characteristics

NOTE : Test condition for Rtt measurements

Measurement Definition for Rtt(eff): Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH (AC)) and I( VIL (AC)) respectively. VIH (AC), VIL

(AC)(DC), and VDDQ values defined in SSTL_18

Rtt(eff) =

VIH (AC) - VIL (AC)

I(VIH (AC)) - I(VIL (AC))

delta VM =

2 x VM

VDDQ

x 100%

- 1

Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.

PARAMETER/CONDITION SYMBOL MIN NOM MAX UNITS NOTE

Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm Rtt1(eff) 60 75 90 ohm 1

Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm Rtt2(eff) 120 150 180 ohm 1

Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm Rtt3(eff) 40 50 60 ohm 1

Deviation of VM with respect to VDDQ/2 delta VM - 6 + 6 % 1

VDDQ

Crossing point

VSSQ

VTR

VCP

VID

VIX or VOX

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K4T1G164QF datasheet DDR2 SDRAM

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9. OCD default characteristics

NOTE :

1. Absolute Specifications (0°C ≤ TCASE ≤ +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)

2. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT

between VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for

values of VOUT between 0V and 280mV.

3. Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and voltage.

4. Slew rate measured from VIL(AC) to VIH(AC).

5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is

guaranteed by design and characterization.

6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.

Output slew rate load :

7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.

8. Timing skew due to DRAM output slew rate mismatch between DQS / DQS and associated DQ is included in tDQSQ and tQHS specification.

Description Parameter Min Nom Max Unit NOTE

Output impedance

18ohm at norminal condition

See full strength default driver characteristics

on device operation specification

ohm 1,2

Output impedance step size for OCD calibration 0 1.5 ohm 6

Pull-up and pull-down mismatch 0 4 ohm 1,2,3

Output slew rate Sout 1.5 5 V/ns 1,4,5,6,7,8

25 ohm

VTT

Output

(VOUT)

Reference

Point

- 16 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

10. IDD Specification Parameters and Test Conditions

(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 5)

Symbol Proposed Conditions Units NOTE

IDD0

Operating one bank active-precharge current;

tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS is HIGH between valid commands;

Address bus inputs are SWITCHING; Data bus inputs are SWITCHING

IDD1

Operating one bank active-read-precharge current;

IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD =

tRCD(IDD); CKE is HIGH, CS is HIGH between valid commands; Address businputs are SWITCHING; Data pattern

is same as IDD4W

IDD2P

Precharge power-down current;

All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are

FLOATING

IDD2Q

Precharge quiet standby current;

All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputsare STABLE; Data

bus inputs are FLOATING

IDD2N

Precharge standby current;

All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING;

Data bus inputs are SWITCHING

IDD3P

Active power-down current;

All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus

inputs are STABLE; Data bus inputs are FLOATING

Fast PDN Exit MRS(12) = 0 mA

Slow PDN Exit MRS(12) = 1 mA

IDD3N

Active standby current;

All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid

commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING

IDD4W

Operating burst write current;

All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP

= tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus

inputs are SWITCHING

IDD4R

Operating burst read current;

All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRAS-

max(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCH-

ING; Data pattern is same as IDD4W

IDD5B

Burst auto refresh current;

tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid com-

mands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING

IDD6

Self refresh current;

CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are

FLOATING; Data bus inputs are FLOATING

Normal mA

Low Power mA

IDD7

Operating bank interleave read current;

All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC

= tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid

commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the fol-

lowing page for detailed timing conditions

- 17 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

NOTE :

1. IDD specifications are tested after the device is properly initialized

2. Input slew rate is specified by AC Parametric Test Condition

3. IDD parameters are specified with ODT disabled.

4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11.

5. Definitions for IDD

LOW is defined as VIN ≤ VIL(AC)max

HIGH is defined as VIN ≥ VIH(AC)min

STABLE is defined as inputs stable at a HIGH or LOW level

FLOATING is defined as inputs at VREF = VDDQ/2

SWITCHING is defined as:

inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control

signals, and

inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including

masks or strobes.

For purposes of IDD testing, the following parameters are utilized

Detailed IDD7

The detailed timings are shown below for IDD7.

Legend: A = Active; RA = Read with Autoprecharge; D = Deselect

IDD7: Operating Current: All Bank Interleave Read operation

All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) and tFAW(IDD) using a burst length of 4. Control and address bus inputs are STABLE during

DESELECTs. IOUT = 0mA

Timing Patterns for 8bank devices x4/ x8

-DDR2-667 5/5/5 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D

-DDR2-800 6/6/6 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D

-DDR2-800 5/5/5 : A0 RA0 D A1 RA1 D A2 RA2 D A3 RA3 D D D A4 RA4 D A5 RA5 D A6 RA6 D A7 RA7 D D D

Timing Patterns for 8bank devices x16

-DDR2-667 5/5/5 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D

-DDR2-800 6/6/6 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D

-DDR2-800 5/5/5 : A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D A4 RA4 D D A5 RA5 D D A6 RA6 D D A7 RA7 D D D D

DDR2-800 DDR2-800 DDR2-667

Units

Parameter 5-5-5 6-6-6 5-5-5

CL(IDD) 5 6 5 tCK

tRCD(IDD) 12.5 15 15 ns

tRC(IDD) 57.5 60 60 ns

tRRD(IDD)-x4/x8 7.5 7.5 7.5 ns

tRRD(IDD)-x16 10 10 10 ns

tCK(IDD) 2.5 2.5 3 ns

tRASmin(IDD)454545ns

tRP(IDD) 12.5 15 15 ns

tRFC(IDD) 127.5 127.5 127.5 ns

- 18 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

11. DDR2 SDRAM IDD Spec Table

Symbol

256Mx4 (K4T1G044QF)

Unit NOTE800@CL=5 800@CL=6 667@CL=5

CE7 CF7 CE6

IDD0 45 45 43 mA

IDD1 51 51 48 mA

IDD2P101010mA

IDD2Q202020mA

IDD2N252524mA

IDD3P-F232322mA

IDD3P-S202020mA

IDD3N373735mA

IDD4W676760mA

IDD4R767666mA

IDD5 105 105 100 mA

IDD6 10 10 10 mA

IDD7 156 156 141 mA

Symbol

128Mx8 (K4T1G084QF)

Unit NOTE800@CL=5 800@CL=6 667@CL=5

CE7 CF7 CE6

IDD0 45 45 43 mA

IDD1 51 51 48 mA

IDD2P101010mA

IDD2Q202020mA

IDD2N252524mA

IDD3P-F232322mA

IDD3P-S202020mA

IDD3N373735mA

IDD4W727265mA

IDD4R808070mA

IDD5 105 105 100 mA

IDD6 10 10 10 mA

IDD7 160 160 145 mA

- 19 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

Symbol

64Mx16 (K4T1G164QF)

Unit NOTE800@CL=5 800@CL=6 667@CL=5

CE7 CF7 CE6

IDD0 55 55 50 mA

IDD1 65 65 60 mA

IDD2P101010mA

IDD2Q222222mA

IDD2N292927mA

IDD3P-F252524mA

IDD3P-S202020mA

IDD3N404037mA

IDD4W959590mA

IDD4R 105 105 95 mA

IDD5 110 110 105 mA

IDD6 10 10 10 mA

IDD7 180 180 165 mA

- 20 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

12. Input/Output capacitance

13. Electrical Characteristics & AC Timing for DDR2-800/667

(0 °C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)

13.1 Refresh Parameters by Device Density

13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

Parameter Symbol DDR2-667 DDR2-800 Units

Min Max Min Max

Input capacitance, CK and CK CCK 1.0 2.0 1.0 2.0 pF

Input capacitance delta, CK and CK CDCK x0.25 x0.25 pF

Input capacitance, all other input-only pins CI 1.0 2.0 1.0 1.75 pF

Input capacitance delta, all other input-only pins CDI x0.25 x0.25 pF

Input/output capacitance, DQ, DM, DQS, DQS CIO 2.5 3.5 2.5 3.5 pF

Input/output capacitance delta, DQ, DM, DQS, DQS CDIO x0.5 x0.5 pF

Parameter Symbol 256Mb 512Mb 1Gb 2Gb 4Gb Units

Refresh to active/Refresh command time tRFC 75 105 127.5 195 327.5 ns

Average periodic refresh interval tREFI 0 °C ≤ TCASE ≤ 85°C7.8 7.8 7.8 7.8 7.8 µs

85 °C < TCASE ≤ 95°C3.9 3.9 3.9 3.9 3.9 µs

Speed DDR2-800(E7) DDR2-800(F7) DDR2-667(E6)

UnitsBin (CL - tRCD - tRP) 5-5-5 6-6-6 5 - 5 - 5

Parameter min max min max min max

tCK, CL=3 5 8 - - 5 8 ns

tCK, CL=4 3.75 83.75 83.75 8ns

tCK, CL=5 2.5 83838 ns

tCK, CL=6 - - 2.5 8 - - ns

tRCD 12.5 -15 -15 -ns

tRP 12.5 -15 -15 -ns

tRC 57.5 -60 -60 -ns

tRAS 45 70000 45 70000 45 70000 ns

- 21 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

13.3 Timing Parameters by Speed Grade

(For information related to the entries in this table, refer to both the general notes and the specific notes following this table.)

Parameter Symbol DDR2-800 DDR2-667 Units NOTE

min max min max

DQ output access time from CK/CK tAC -400 400 -450 450 ps 40

DQS output access time from CK/CK tDQSCK -350 350 -400 400 ps 40

Average clock HIGH pulse width tCH(avg) 0.48 0.52 0.48 0.52 tCK(avg) 35,36

Average clock LOW pulse width tCL(avg) 0.48 0.52 0.48 0.52 tCK(avg) 35,36

CK half pulse period tHP Min(tCL(abs),

tCH(abs)) xMin(tCL(abs),

tCH(abs)) xps 37

Average clock period tCK(avg) 2500 8000 3000 8000 ps 35,36

DQ and DM input hold time tDH(base) 125 x 175 x ps 6,7,8,21,28,31

DQ and DM input setup time tDS(base) 50 x 100 x ps 6,7,8,20,28,31

Control & Address input pulse width for each input tIPW 0.6 x 0.6 x tCK(avg)

DQ and DM input pulse width for each input tDIPW 0.35 x 0.35 x tCK(avg)

Data-out high-impedance time from CK/CK tHZ x tAC(max) x tAC(max) ps 18,40

DQS/DQS low-impedance time from CK/CK tLZ(DQS) tAC(min) tAC(max) tAC(min) tAC(max) ps 18,40

DQ low-impedance time from CK/CK tLZ(DQ) 2* tAC(min) tAC(max) 2* tAC(min) tAC(max) ps 18,40

DQS-DQ skew for DQS and associated DQ signals tDQSQ x 200 x 240 ps 13

DQ hold skew factor tQHS x 300 x 340 ps 38

DQ/DQS output hold time from DQS tQH tHP - tQHS x tHP - tQHS x ps 39

DQS latching rising transitions to associated clock edges tDQSS - 0.25 0.25 -0.25 0.25 tCK(avg) 30

DQS input HIGH pulse width tDQSH 0.35 x 0.35 x tCK(avg)

DQS input LOW pulse width tDQSL 0.35 x 0.35 x tCK(avg)

DQS falling edge to CK setup time tDSS 0.2 x 0.2 x tCK(avg) 30

DQS falling edge hold time from CK tDSH 0.2 x 0.2 x tCK(avg) 30

Mode register set command cycle time tMRD 2 x 2 x nCK

MRS command to ODT update delay tMOD 0 12 0 12 ns 32

Write postamble tWPST 0.4 0.6 0.4 0.6 tCK(avg) 10

Write preamble tWPRE 0.35 x 0.35 x tCK(avg)

Address and control input hold time tIH(base) 250 x 275 x ps 5,7,9,23,29

Address and control input setup time tIS(base) 175 x 200 x ps 5,7,9,22,29

Read preamble tRPRE 0.9 1.1 0.9 1.1 tCK(avg) 19,41

Read postamble tRPST 0.4 0.6 0.4 0.6 tCK(avg) 19,42

Activate to activate command period for 1KB page size products tRRD 7.5 x 7.5 x ns 4,32

Activate to activate command period for 2KB page size products tRRD 10 x10 xns 4,32

- 22 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

Parameter Symbol DDR2-800 DDR2-667 Units NOTE

min max min max

Four Activate Window for 1KB page size products tFAW 35 x37.5 xns 32

Four Activate Window for 2KB page size products tFAW 45 x50 xns 32

CAS to CAS command delay tCCD 2 x 2 x nCK

Write recovery time tWR 15 x 15 x ns 32

Auto precharge write recovery + precharge time tDAL WR + tnRP x WR + tnRP xnCK 33

Internal write to read command delay tWTR 7.5 x7.5x ns 24,32

Internal read to precharge command delay tRTP 7.5 x 7.5 xns 3,32

Exit self refresh to a non-read command tXSNR tRFC + 10 x tRFC + 10 xns 32

Exit self refresh to a read command tXSRD 200 x 200 xnCK

Exit precharge power down to any command tXP 2 x 2 xnCK

Exit active power down to read command tXARD 2 x 2 xnCK 1

Exit active power down to read command

(slow exit, lower power) tXARDS 8 - AL x7 - AL xnCK 1,2

CKE minimum pulse width (HIGH and LOW pulse width) tCKE 3 x 3 x nCK 27

ODT turn-on delay tAOND 2 2 2 2 nCK 16

ODT turn-on tAON tAC(min) tAC(max)+0.7 tAC(min) tAC(max)+0.7 ns 6,16,40

ODT turn-on (Power-Down mode) tAONPD tAC(min)+2 2*tCK(avg)

+tAC(max)+1 tAC(min)+2 2*tCK(avg)

+tAC(max)+1 ns

ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 nCK 17,45

ODT turn-off tAOF tAC(min) tAC(max)+0.6 tAC(min) tAC(max)+0.6 ns 17,43,45

ODT turn-off (Power-Down mode) tAOFPD tAC(min)+2 2.5*tCK(avg)+

tAC(max)+1 tAC(min)+2 2.5*tCK(avg)+

tAC(max)+1 ns

ODT to power down entry latency tANPD 3 x3xnCK

ODT power down exit latency tAXPD 8 x8xnCK

OCD drive mode output delay tOIT 0 12 0 12 ns 32

Minimum time clocks remains ON after CKE asynchronously

drops LOW tDelay tIS+tCK(avg)

+tIH xtIS+tCK(avg)

+tIH xns15

Figure 4. Slew Rate Test Load

Figure 3. AC Timing Reference Load

- 23 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

14. General notes, which may apply for all AC parameters

1. DDR2 SDRAM AC timing reference load

Figure 3 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise repre

sentation of the typical system environment or a depiction of the actual load presented by a production tester. System designers will use IBIS or other sim-

ulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a

coaxial transmission line terminated at the tester electronics).

The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage level for differential

signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS) signal.

2. Slew Rate Measurement Levels

a) Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single ended signals. For differential signals

(e.g. DQS - DQS) output slew rate is measured between DQS - DQS = - 500 mV and DQS - DQS = + 500 mV. Output slew rate is guaranteed by

design, but is not necessarily tested on each device.

b) Input slew rate for single ended signals is measured from VREF(DC) to VIH(AC),min for rising edges and from VREF(DC) to VIL(AC),max for falling

edges. For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = - 250 mV to CK - CK = + 500 mV (+ 250 mV to -

500 mV for falling edges).

c) VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or between DQS and DQS for differential strobe.

3. DDR2 SDRAM output slew rate test load

Output slew rate is characterized under the test conditions as shown in Figure 4.

VDDQ

DUT

DQS

DQS Output VTT = VDDQ/2

25Ω

Timing

reference

point

RDQS

VDDQ

DUT DQ

DQS, DQS

RDQS, RDQS

Output VTT = VDDQ/2

25Ω

Test point

Figure 6. Data Output (Read) Timing

Figure 5. Data Input (Write) Timing

- 24 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

4. Differential data strobe

DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the EMRS "Enable DQS" mode bit;

timing advantages of differential mode are realized in system design. The method by which the DDR2 SDRAM pin timings are measured is mode depen-

dent. In single ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at VREF. In differential mode, these

timing relationships are measured relative to the crosspoint of DQS and its complement, DQS. This distinction in timing methods is guaranteed by design

and characterization. Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied externally to VSS

through a 20 Ω to 10 kΩ resistor to insure proper operation.

5. AC timings are for linear signal transitions. See Specific Notes on derating for other signal transitions.

6. All voltages are referenced to VSS.

7. These parameters guarantee device behavior, but they are not necessarily tested on each device.

They may be guaranteed by device design or tester correlation.

8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply voltage levels, but the related

specifications and device operation are guaranteed for the full voltage range specified.

tDS tDH

tWPRE tWPST

tDQSH tDQSL

DQS

DMin

DQS

tDH

DMin DMin DMin

DDD

DQS

VIL(AC)

VIH(AC)

VIL(AC)

VIH(AC)

VIL(DC)

VIH(DC)

VIL(DC)

VIH(DC)

tDS

tCH tCL

CK/CK

DQS/DQS

DQS

tRPST

tRPRE

tDQSQ(max)

tQH tQH

tDQSQ(max)

QQQ

- 25 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

15. Specific Notes for dedicated AC parameters

1. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing.

tXARDS is expected to be used for slow active power down exit timing.

2. AL = Additive Latency.

3. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied.

4. A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency.

5. Timings are specified with command/address input slew rate of 1.0 V/ns.

6. Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.

7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in

differential strobe mode and a slew rate of 1.0 V/ns in single ended mode.

8. Data setup and hold time derating.

[ Table 1 ] DDR2-400/533 tDS/tDH derating with differential data strobe

[ Table 2 ] DDR2-667/800 tDS/tDH derating with differential data strobe

∆tDS, ∆tDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, the note applies to entire Table)

DQS,DQS Differential Slew Rate

4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns 0.8V/ns

∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH

Siew

rate

V/ns

2.0125451254512545------------

1.58321832183219533----------

1.000000012122424--------

0.9---11-14-11-141-213102522------

0.8-----25-31-13-19-1-71152317----

0.7-------31-42-19-30-7-185-6176--

0.6---------43-59-31-47-19-35-7-235-11

0.5-----------74-89-62-77-50-65-38-53

0.4-------------127-140-115-128-103-116

∆tDS, ∆tDH Derating Values for DDR2-667, DDR2-800 (ALL units in ‘ps’, the note applies to entire Table)

DQS,DQS Differential Slew Rate

4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns 0.8V/ns

∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH ∆tDS ∆tDH

Slew

rate

V/ns

2.0100451004510045------------

1.56721672167217933----------

1.000000012122424--------

0.9---5-14-5-147-219103122------

0.8-----13-31-1-1911-72353517----

0.7-------10-422-3014-1826-6386--

0.6---------10-592-4714-3526-2338-11

0.5-----------24-89-12-770-6512-53

0.4-------------52-140-40-128-28-116

- 26 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

[ Table 3 ] DDR2-400/533 tDS1/tDH1 derating with single-ended data strobe

For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value to the

∆tDS and ∆tDH derating value respectively. Example: tDS (total setup time) =tDS(base) +∆tDS.

Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min.

Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If

the actual signal is always earlier than the nominal slew rate line between shaded ’VREF(DC) to ac region’, use nominal slew rate for derating value (See

Figure 7 for differential data strobe and Figure 8 for single-ended data strobe.) If the actual signal is later than the nominal slew rate line anywhere

between shaded ’VREF(DC) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see Fig-

ure 9 for differential data strobe and Figure 10 for single-ended data strobe)

Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC).

Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If

the actual signal is always later than the nominal slew rate line between shaded ’dc level to VREF(DC) region’, use nominal slew rate for derating value

(see Figure 11 for differential data strobe and Figure 12 for single-ended data strobe) If the actual signal is earlier than the nominal slew rate line any-

where between shaded ’dc to VREF(DC) region’, the slew rate of a tangent line to the actual signal from the dc level to VREF(DC) level is used for derating

value (see Figure 13 for differential data strobe and Figure 14 for single-ended data strobe)

Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(AC) at the time of the rising clock

transition) a valid input signal is still required to complete the transition and reach VIH/IL(AC).

For slew rates in between the values listed in Table 1, Table 2 and Table 3 the derating values may obtained by linear interpolation.

These values are typically not subject to production test. They are verified by design and characterization.

∆tDS1, ∆tDH1 Derating Values for DDR2-400, DDR2-533(All units in ‘ps’; the note applies to the entire table)

DQS Single-ended Slew Rate

2.0 V/ns 1.5 V/ns 1.0 V/ns 0.9 V/ns 0.8 V/ns 0.7 V/ns 0.6 V/ns 0.5 V/ns 0.4 V/ns

∆tDS

∆tDH

∆tDS

∆tDH

∆tDS

∆tDH

∆tDS

∆tDH

∆tDS

∆tDH

∆tDS

∆tDH

∆tDS

∆tDH

∆tDS

∆tDH

∆tDS

∆tDH

Slew

rate

V/ns

2.0 188 188 167 146 125 63 - - - - - - - - - - - -

1.5 146 167 125 125 83 42 81 43 - - - - - - - - - -

1.0 63 125 42 83 0 0 -2 1 -7 -13 - - - - - - - -

0.9 - - 31 69 -11 -14 -13 -13 -18 -27 -29 -45 - - - - - -

0.8 - - - - -25 -31 -27 -30 -32 -44 -43 -62 -60 -86 - - - -

0.7 - - - - - - -45 -53 -50 -67 -61 -85 -78 -109 -108 -152 - -

0.6 - - - - - - - - -74 -96 -85 -114 -102 -138 -138 -181 -183 -246

0.5 - - - - - - - - - - -128 -156 -145 -180 -175 -223 -226 -288

0.4 - - - - - - - - - - - - -210 -243 -240 -286 -291 -351

Figure 7. IIIustration of nominal slew rate for tDS (differential DQS,DQS)

- 27 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

VSS

tDS tDH

Setup Slew Rate

Rising Signal

Falling Signal

∆TF ∆TR

VREF(DC) - VIL(AC)max

∆TF

VIH(AC)min - VREF(DC)

∆TR

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

nominal slew

rate

nominal

slew rate

VREF to ac

region

VREF to ac

region

tDS tDH

tVAC

DQS

Figure 8. IIIustration of nominal slew rate for tDS (single-ended DQS)

- 28 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

VSS

tDS tDH

Setup Slew Rate

Rising Signal

Falling Signal

∆TF ∆TR

VREF(DC) - VIL(AC)max

∆TF

=VIH(AC)min - VREF(DC)

∆TR

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

nominal slew

rate

nominal

slew rate

VREF to ac

region

VREF to ac

region

DQS

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

VSS

tDH

tDS

Note1

NOTE : DQS signal must be monotonic between VIL(AC)max and VIH(AC)min.

Figure 9. IIIustration of tangent line for tDS (differential DQS, DQS)

- 29 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

VSS

Setup Slew Rate

Rising Signal

Falling Signal

∆TF

∆TR

tangent line[VREF(DC) - VIL(AC)max]

∆TF

tangent line[VIH(AC)min - VREF(DC)]

∆TR

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

tangent

VREF to ac

region

VREF to ac

region

line

nominal

line

nominal

line

tDS tDH tDS tDH

DQS

Figure 10. IIIustration of tangent line for tDS (single-ended DQS)

- 30 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

VSS

Setup Slew Rate

Rising Signal

Falling Signal

∆TF

∆TR

tangent line[VREF(DC) - VIL(AC)max]

∆TF

tangent line[VIH(AC)min - VREF(DC)]

∆TR

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

tangent

VREF to ac

region

VREF to ac

region

line

nominal

line

nominal

line

tDS tDH

DQS

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

VSS

tDH

tDS

Note1

NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.

Figure 11. IIIustration of nominal slew rate for tDH (differential DQS, DQS)

- 31 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

VSS

Hold Slew Rate

Falling Signal

Rising Signal

∆TR ∆TF

VREF(DC) - VIL(DC)max

∆TR

=VIH(DC)min - VREF(DC)

∆TF

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

nominal

slew rate

nominal

slew rate

dc to VREF

region

dc to VREF

region

tDS tDH tDS tDH

DQS

Figure 12. IIIustration of nominal slew rate for tDH (single-ended DQS)

- 32 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

VSS

Hold Slew Rate

Falling Signal

Rising Signal

∆TR ∆TF

VREF(DC) - VIL(DC)max

∆TR

=VIH(DC)min - VREF(DC)

∆TF

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

nominal

slew rate

nominal

slew rate

dc to VREF

region

dc to VREF

region

tDS tDH

DQS

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

VSS

tDH

tDS

Note1

NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.

Figure 13. IIIustration of tangent line for tDH (differential DQS, DQS)

- 33 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

Hold Slew Rate

∆TF

∆TR

tangent line [ VIH(DC)min - VREF(DC) ]

∆TF

tangent

dc to VREF

region

dc to VREF

region

line

nominal

line

nominal

line

Falling Signal

Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]

∆TR

Rising Signal

tDS tDH tDS tDH

DQS

VSS

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

Figure 14. IIIustration of tangent line for tDH (single-ended DQS)

- 34 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

Hold Slew Rate

∆TF

∆TR

tangent line [ VIH(DC)min - VREF(DC) ]

∆TF

tangent

dc to VREF

region

dc to VREF

region

line

nominal

line

nominal

line

Falling Signal

Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]

∆TR

Rising Signal

NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.

tDS tDH

DQS

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

VSS

tDH

tDS

Note1

VSS

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

- 35 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

9. tIS and tIH (input setup and hold) derating

[ Table 4 ] Derating values for DDR2-400, DDR2-533

∆tIS, ∆tIH Derating Values for DDR2-400, DDR2-533

CK, CK Differential Slew Rate

2.0 V/ns 1.5 V/ns 1.0 V/ns Units NOTE

∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH

Command/

Address Slew

rate(V/ns)

4.0 +187 +94 +217 +124 +247 +154 ps 1

3.5 +179 +89 +209 +119 +239 +149 ps 1

3.0 +167 +83 +197 +113 +227 +143 ps 1

2.5 +150 +75 +180 +105 +210 +135 ps 1

2.0 +125 +45 +155 +75 +185 +105 ps 1

1.5 +83 +21 +113 +51 +143 +81 ps 1

1.0 0 0 +30 +30 +60 +60 ps 1

0.9 -11 -14 +19 +16 +49 +46 ps 1

0.8-25-31+5 -1+35+29ps 1

0.7 -43 -54 -13 -24 +17 +6 ps 1

0.6 -67 -83 -37 -53 -7 -23 ps 1

0.5 -110 -125 -80 -95 -50 -65 ps 1

0.4 -175 -188 -145 -158 -115 -128 ps 1

0.3 -285 -292 -255 -262 -225 -232 ps 1

0.25 -350 -375 -320 -345 -290 -315 ps 1

0.2 -525 -500 -495 -470 -465 -440 ps 1

0.15 -800 -708 -770 -678 -740 -648 ps 1

0.1 -1450 -1125 -1420 -1095 -1390 -1065 ps 1

- 36 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

[ Table 5 ] Derating values for DDR2-667, DDR2-800

For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and tIH(base) value to the ∆tIS

and ∆tIH derating value respectively. Example: tIS (total setup time) = tIS(base) + ∆tIS

Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min.

Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If

the actual signal is always earlier than the nominal slew rate line between shaded ’VREF(DC) to ac region’, use nominal slew rate for derating value (see

Figure 15). If the actual signal is later than the nominal slew rate line anywhere between shaded ’VREF(DC) to ac region’, the slew rate of a tangent line to

the actual signal from the ac level to dc level is used for derating value (see Figure 16).

Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC).

Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If

the actual signal is always later than the nominal slewrate line between shaded ’dc to VREF(DC) region’, use nominal slew rate for derating value (see Fig-

ure 17). If the actual signal is earlier than the nominal slew rate line anywhere between shaded ’dc to VREF(DC) region’, the slew rate of a tangent line to

the actual signal from the dc level to VREF(DC) level is used for derating value (see Figure 18).

Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(AC) at the time of the rising clock

transition) a valid input signal is still required to complete the transition and reach VIH/IL(AC).

For slew rates in between the values listed in Table 4 and Table 5 the derating values may obtained by linear interpolation.

These values are typically not subject to production test. They are verified by design and characterization.

∆tIS and ∆tIH Derating Values for DDR2-667, DDR2-800

CK, CK Differential Slew Rate

2.0 V/ns 1.5 V/ns 1.0 V/ns Units NOTE

∆tIS ∆tIH ∆tIS ∆tIH ∆tIS ∆tIH

Command/

Address Slew

rate(V/ns)

4.0 +150 +94 +180 +124 +210 +154 ps 1

3.5 +143 +89 +173 +119 +203 +149 ps 1

3.0 +133 +83 +163 +113 +193 +143 ps 1

2.5 +120 +75 +150 +105 +180 +135 ps 1

2.0 +100 +45 +130 +75 +160 +105 ps 1

1.5 +67 +21 +97 +51 +127 +81 ps 1

1.0 0 0 +30 +30 +60 +60 ps 1

0.9 -5 -14 +25 +16 +55 +46 ps 1

0.8 -13 -31 +17 -1 +47 +29 ps 1

0.7 -22 -54 +8 -24 +38 +6 ps 1

0.6 -34 -83 -4 -53 +26 -23 ps 1

0.5 -60 -125 -30 -95 0 -65 ps 1

0.4 -100 -188 -70 -158 -40 -128 ps 1

0.3 -168 -292 -138 -262 -108 -232 ps 1

0.25 -200 -375 -170 -345 -140 -315 ps 1

0.2 -325 -500 -295 -470 -265 -440 ps 1

0.15 -517 -708 -487 -678 -457 -648 ps 1

0.1 -1000 -1125 -970 -1095 -940 -1065 ps 1

Figure 15. IIIustration of nominal slew rate for tIS

- 37 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

VSS

Setup Slew Rate

Rising Signal

Falling Signal

∆TF ∆TR

VREF(DC) - VIL(AC)max

∆TF

VIH(AC)min - VREF(DC)

∆TR

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

nominal slew

rate

nominal

slew rate

VREF to ac

region

VREF to ac

region

tIS tIH tIS tIH

Figure 16. IIIustration of tangent line for tIS

- 38 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

VSS

Setup Slew Rate

Rising Signal

Falling Signal

∆TF

∆TR

tangent line[VREF(DC) - VIL(AC)max]

∆TF

tangent line[VIH(AC)min - VREF(DC)]

∆TR

tangent

VREF to ac

region

VREF to ac

region

line

nominal

line

nominal

line

tIS tIH tIS tIH

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

Figure 17. IIIustration of nominal slew rate for tIH

- 39 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

Hold Slew Rate

Falling Signal

Rising Signal

∆TR ∆TF

VREF(DC) - VIL(DC)max

∆TR

=VIH(DC)min - VREF(DC)

∆TF

nominal

slew rate

nominal

slew rate

dc to VREF

region

dc to VREF

region

tIS tIH tIS tIH

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

VSS

Figure 18. IIIustration of tangent line for tIH

- 40 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

Hold Slew Rate

∆TF

∆TR

tangent line [ VIH(DC)min - VREF(DC)]

∆TF

tangent

dc to VREF

region

dc to VREF

region

line

nominal

line

nominal

line

Falling Signal

Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]

∆TR

Rising Signal

tIS tIH tIS tIH

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

VSS

Figure 19. Method for calculating transitions and endpoints

- 41 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

10. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance

(bus turnaround) will degrade accordingly.

11. MIN ( tCL, tCH) refers to the smaller of the actual clock LOW time and the actual clock HIGH time as provided to the device (i.e. this value can be

greater than the minimum specification limits for tCL and tCH). For example, tCL and tCH are = 50% of the period, less the half period jitter ( tJIT(HP))

of the clock source, and less the half period jitter due to crosstalk ( tJIT(crosstalk)) into the clock traces.

12. tQH = tHP - tQHS, where :

tHP = minimum half clock period for any given cycle and is defined by clock HIGH or clock LOW (tCH, tCL).

tQHS accounts for:

1) The pulse duration distortion of on-chip clock circuits; and

2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due

to data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers.

13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output slew rate

mismatch between DQS/ DQS and associated DQ in any given cycle.

14. tDAL = WR + RU{ tRP[ns] / tCK[ns] }, where RU stands for round up.

WR refers to the tWR parameter stored in the MRS. For tRP, if the result of the division is not already an integer, round up to the next highest integer.

tCK refers to the application clock period.

Example: For DDR533 at tCK = 3.75ns with WR programmed to 4 clocks.

tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.

15. The clock frequency is allowed to change during self refresh mode or precharge power-down mode.

16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resis-

tance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is 10 ns (= 2 x 5 ns) after

the clock edge that registered a first ODT HIGH if tCK = 5 ns. For DDR2-667/800, tAOND is 2 clock cycles after the clock edge that registered a first

ODT HIGH counting the actual input clock edges.

17. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are mea-

sured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is 12.5 ns (= 2.5 x 5 ns) after the clock edge that regis-

tered a first ODT LOW if tCK = 5 ns. For DDR2-667/800, if tCK(avg) = 3 ns is assumed, tAOFD is 1.5 ns (= 0.5 x 3 ns) after the second trailing clock

edge counting from the clock edge that registered a first ODT LOW and by counting the actual input clock edges.

18. tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which

specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) . Figure 19 shows a method to calculate the point when device is no

longer driving (tHZ), or beginsdriving (tLZ) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as

long as the calculation is consistent. tLZ(DQ) refers to tLZ of the DQS and tLZ(DQS) refers to tLZ of the (U/L/R)DQS and (U/L/R)DQS each treated as

single-ended signal.

19. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST),

or begins driving (tRPRE). Figure 19 shows a method to calculate these points when the device is no longer driving (tRPST), or begins driving

(tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consis-

tent.

tHZ

tRPST end point

VOH + x mV

VOH + 2x mV

VOL + 2x mV

VOL + x mV

tLZ

VTT + 2x mV

VTT + x mV

VTT - x mV

VTT - 2x mV

tLZ,tRPRE begin point = 2*T1-T2tHZ,tRPST end point = 2*T1-T2

Figure 21. Differential input waveform timing - tIS and tIH

Figure 20. Differential input waveform timing - tDS and tDH

- 42 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

20. Input waveform timing tDS with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(AC) level to the

differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(AC) level to the differential data strobe crosspoint for

a falling signal applied to the device under test. DQS, DQS signals must be monotonic between VIL(DC)max and VIH(DC)min. See Figure 20.

21. Input waveform timing tDH with differential data strobe enabled MR[bit10]=0, is referenced from the differential data strobe crosspoint to the input sig-

nal crossing at the VIH(DC) level for a falling signal and from the differential data strobe crosspoint to the input signal crossing at the VIL(DC) level for

a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL(DC)max and VIH(DC)min. See Figure 20.

22. Input waveform timing is referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the

device under test. See Figure 21.

23. Input waveform timing is referenced from the input signal crossing at the VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the

device under test. See Figure 21.

tDS

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

VSS

DQS

tDH

tDS tDH

tIS

tIH

tIS tIH

VDDQ

VIH(AC)min

VIH(DC)min

VREF(DC)

VIL(DC)max

VIL(AC)max

VSS

- 43 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

24. tWTR is at lease two clocks (2 x tCK or 2 x nCK) independent of operation frequency.

25. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the VIH(AC) level to the sin-

gle-ended data strobe crossing VIH/L(DC) at the start of its transition for a rising signal, and from the input signal crossing at the VIL(AC) level to the

single-ended data strobe crossing VIH/L(DC) at the start of its transition for a falling signal applied to the device under test. The DQS signal must be

monotonic between VIL(DC)max and VIH(DC)min.

26. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the VIH(DC) level to the

single-ended data strobe crossing VIH/L(AC) at the end of its transition for a rising signal, and from the input signal crossing at the VIL(DC) level to the

single-ended data strobe crossing VIH/L(AC) at the end of its transition for a falling signal applied to the device under test. The DQS signal must be

monotonic between VIL(DC)max and VIH(DC)min.

27. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire

time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of

tIS + 2 x tCK + tIH.

28. If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.

29. These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to its respective

clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and

hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is pres-

ent or not.

30. These parameters are measured from a data strobe signal ((L/U/R)DQS/DQS) crossing to its respective clock signal (CK/CK) crossing. The spec val-

ues are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these

parameters should be met whether clock jitter is present or not.

31. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal ((L/U/

R)DQS/DQS) crossing.

32. For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK(avg)}, which is in clock

cycles, assuming all input clock jitter specifications are satisfied.

For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means: For

DDR2-667 5-5-5, of which tRP = 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 5, i.e. as long as the input clock jitter specifications are

met, Precharge command at Tm and Active command at Tm+5 is valid even if (Tm+5 - Tm) is less than 15ns due to input clock jitter.

33. tDAL [nCK] = WR [nCK] + tnRP [nCK] = WR + RU {tRP [ps] / tCK(avg) [ps] }, where WR is the value programmed in the mode register set.

34. New units, ’tCK(avg)’ and ’nCK’, are introduced in DDR2-667 and DDR2-800. Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under

operation. Unit ’nCK’ represents one clock cycle of the input clock, counting the actual clock edges.

Note that in DDR2-400 and DDR2-533, ’tCK’ is used for both concepts.

ex) tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered at Tm+2, even if (Tm+2 - Tm) is 2 x tCK(avg)

+ tERR(2per),min.

35. Input clock jitter spec parameter. These parameters and the ones in the table below are referred to as 'input clock jitter spec parameters' and these

parameters apply to DDR2-667 and DDR2-800 only. The jitter specified is a random jitter meeting a Gaussian distribution.

Parameter Symbol DDR2-667 DDR2-800 units NOTE

Min Max Min Max

Clock period jitter tJIT(per) -125 125 -100 100 ps 35

Clock period jitter during DLL locking period tJIT(per,lck) -100 100 -80 80 ps 35

Cycle to cycle clock period jitter tJIT(cc) -250 250 -200 200 ps 35

Cycle to cycle clock period jitter during DLL locking period tJIT(cc,lck) -200 200 -160 160 ps 35

Cumulative error across 2 cycles tERR(2per) -175 175 -150 150 ps 35

Cumulative error across 3 cycles tERR(3per) -225 225 -175 175 ps 35

Cumulative error across 4 cycles tERR(4per) -250 250 -200 200 ps 35

Cumulative error across 5 cycles tERR(5per) -250 250 -200 200 ps 35

Cumulative error across n cycles, n = 6 ... 10, inclusive tERR(6-10per) -350 350 -300 300 ps 35

Cumulative error across n cycles, n = 11 ... 50, inclusive tERR(11-50per) -450 450 -450 450 ps 35

Duty cycle jitter tJIT(duty) -125 125 -100 100 ps 35

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K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

Definitions :

- tCK(avg)

tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window.

- tCH(avg) and tCL(avg)

tCH(avg) is defined as the average HIGH pulse width, as calculated across any consecutive 200 HIGH pulses.

tCL(avg) is defined as the average LOW pulse width, as calculated across any consecutive 200 LOW pulses.

- tJIT(duty)

tJIT(duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from tCH(avg). tCL jitter is the

largest deviation of any single tCL from tCL(avg).

tJIT(duty) = Min/max of {tJIT(CH), tJIT(CL)}

where,

tJIT(CH) = {tCHi- tCH(avg) where i=1 to 200}

tJIT(CL) = {tCLi- tCL(avg) where i=1 to 200}

- tJIT(per), tJIT(per,lck)

tJIT(per) is defined as the largest deviation of any single tCK from tCK(avg).

tJIT(per) = Min/max of {tCKi- tCK(avg) where i=1 to 200}

tJIT(per) defines the single period jitter when the DLL is already locked.

tJIT(per,lck) uses the same definition for single period jitter, during the DLL locking period only.

tJIT(per) and tJIT(per,lck) are not guaranteed through final production testing.

- tJIT(cc), tJIT(cc,lck)

tJIT(cc) is defined as the difference in clock period between two consecutive clock cycles : tJIT(cc) = Max of |tCKi+1 - tCKi|

tJIT(cc) defines the cycle to cycle jitter when the DLL is already locked.

tJIT(cc,lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only.

tJIT(cc) and tJIT(cc,lck) are not guaranteed through final production testing.

- tERR(2per), tERR (3per), tERR (4per), tERR (5per), tERR (6-10per) and tERR (11-50per)

tERR is defined as the cumulative error across multiple consecutive cycles from tCK(avg).

tCK(avg) =

where N = 200

tCKj

j = 1

∑

tCH(avg) =

where N = 200

tCHj

j = 1

/(N x tCK(avg))

∑

tCL(avg) =

where N = 200

tCLj

j = 1

/(N x tCK(avg))

∑

tERR(nper) =

where

n = 2

i + n - 1

tCKj

j = 1

- n x tCK(avg)

∑

for tERR(2per)

n = 3 for tERR(3per)

n = 4 for tERR(4per)

n = 5 for tERR(5per)

6 ≤ n ≤ 10 for tERR(6-10per)

11 ≤ n ≤ 50 for tERR(11-50per)

- 45 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

36. These parameters are specified per their average values, however it is understood that the following relationship between the average timing and the

absolute instantaneous timing holds at all times. (Min and max of SPEC values are to be used for calculations in the table below.)

Example: For DDR2-667, tCH(abs),min = ( 0.48 x 3000 ps ) - 125 ps = 1315 ps

37. tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter. It is used

in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the following equation;

tHP = Min ( tCH(abs), tCL(abs) ),

where,

tCH(abs) is the minimum of the actual instantaneous clock HIGH time;

tCL(abs) is the minimum of the actual instantaneous clock LOW time;

38. tQHS accounts for:

1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is transferred to the output; and

2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are independent of

each other, due to data pin skew, output pattern effects, and p-channel to n-channel variation of the output drivers

39. tQH = tHP - tQHS, where:

tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the max column.

{The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}

Examples:

1) If the system provides tHP of 1315 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975 ps minimum.

2) If the system provides tHP of 1420 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080 ps minimum.

40. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output derat-

ings are relative to the SDRAM input clock.)

For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per)min = - 272 ps and tERR(6-10per)max = + 293 ps, then tDQSCK-

min(derated) = tDQSCKmin - tERR(6-10per)max = - 400 ps - 293 ps = - 693 ps and tDQSCKmax(derated) = tDQSCKmax - tERR(6-10per)min = 400

ps + 272 ps = + 672 ps. Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ)min(derated) = - 900 ps - 293 ps = - 1193 ps and tLZ(DQ)max(derated) =

450 ps + 272 ps = + 722 ps.

41. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per) of the input clock. (output deratings are

relative to the SDRAM input clock.)

For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per)min = - 72 ps and tJIT(per)max = + 93 ps, then tRPREmin(derated) =

tRPREmin + tJIT(per)min = 0.9 x tCK(avg) - 72 ps = + 2178 ps and tRPREmax(derated) = tRPREmax + tJIT(per)max = 1.1 x tCK(avg) + 93 ps = +

2843 ps.

42. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(duty) of the input clock. (output deratings are

relative to the SDRAM input clock.)

For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty),min = - 72 ps and tJIT(duty)max = + 93 ps, then tRPSTmin(derated) =

tRPSTmin + tJIT(duty)min = 0.4 x tCK(avg) - 72 ps = + 928 ps and tRPSTmax(derated) = tRPSTmax + tJIT(duty)max = 0.6 x tCK(avg) + 93 ps = +

1592 ps.

43. When the device is operated with input clock jitter, this parameter needs to be derated by { - tJIT(duty)max - tERR(6-10per)max } and { - tJIT(duty)min

- tERR(6-10per)min } of the actual input clock. (output deratings are relative to the SDRAM input clock.)

For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per)min = - 272 ps, tERR(6- 10per)max = + 293 ps, tJIT(duty)min = - 106

ps and tJIT(duty)max = + 94 ps, then tAOFmin(derated) = tAOFmin + { - tJIT(duty)max - tERR(6-10per)max } = - 450 ps + { - 94 ps - 293 ps} = - 837

ps and tAOFmax(derated) = tAOFmax + { - tJIT(duty)min - tERR(6-10per)min } = 1050 ps + { 106 ps + 272 ps } = + 1428 ps.

Parameter Symbol Min Max Units

Absolute clock Period tCK(abs) tCK(avg)min + tJIT(per)min tCK(avg)max + tJIT(per)max ps

Absolute clock HIGH pulse width tCH(abs) tCH(avg)min x tCK(avg)min +

tJIT(duty)min

tCH(avg)max x tCK(avg)max +

tJIT(duty)max ps

Absolute clock LOW pulse width tCL(abs) tCL(avg)min x tCK(avg)min +

tJIT(duty)min

tCL(avg)max x tCK(avg)max +

tJIT(duty)max ps

- 46 -

K4T1G164QF datasheet DDR2 SDRAM

Rev. 1.1

K4T1G084QF

K4T1G044QF

44. For tAOFD of DDR2-400/533, the 1/2 clock of tCK in the 2.5 x tCK assumes a tCH, input clock HIGH pulse width of 0.5 relative to tCK. tAOF,min and

tAOF,max should each be derated by the same amount as the actual amount of tCH offset present at the DRAM input with respect to 0.5.

For example, if an input clock has a worst case tCH of 0.45, the tAOFmin should be derated by subtracting 0.05 x tCK from it, whereas if an input clock

has a worst case tCH of 0.55, the tAOFmax should be derated by adding 0.05 x tCK to it. Therefore, we have;

tAOFmin(derated) = tAC,min - [0.5 - Min(0.5, tCHmin)] x tCK

tAOFmax(derated) = tAC,max + 0.6 + [Max(0.5, tCHmax) - 0.5] x tCK

tAOFmin(derated) = Min(tACmin, tACmin - [0.5 - tCHmin] x tCK)

tAOFmax(derated) = 0.6 + Max(tACmax, tACmax + [tCHmax - 0.5] x tCK)

where tCHmin and tCHmax are the minimum and maximum of tCH actually measured at the DRAM input balls.

45. For tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock HIGH pulse width of 0.5 relative to

tCK(avg). tAOFmin and tAOFmax should each be derated by the same amount as the actual amount of tCH(avg) offset present at the DRAM input

with respect to 0.5.

For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOFmin should be derated by subtracting 0.02 x tCK(avg) from it, whereas if an

input clock has a worst case tCH(avg) of 0.52, the tAOFmax should be derated by adding 0.02 x tCK(avg) to it. Therefore, we have;

tAOFmin(derated) = tACmin - [0.5 - Min(0.5, tCH(avg)min)] x tCK(avg)

tAOFmax(derated) = tACmax + 0.6 + [Max(0.5, tCH(avg)max) - 0.5] x tCK(avg)

tAOFmin(derated) = Min(tACmin, tACmin - [0.5 - tCH(avg)min] x tCK(avg))

tAOFmax(derated) = 0.6 + Max(tACmax, tACmax + [tCH(avg)max - 0.5] x tCK(avg))

where tCH(avg),min and tCH(avg),max are the minimum and maximum of tCH(avg) actually measured at the DRAM input balls.

NOTE : Tthat these deratings are in addition to the tAOF derating per input clock jitter, i.e. tJIT(duty) and tERR(6-10per). However tAC values used in the equations shown

above are from the timing parameter table and are not derated. Thus the final derated values for tAOF are;

tAOFmin(derated_final) = tAOFmin(derated) + { - tJIT(duty)max - tERR(6-10per)max }

tAOFmax(derated_final) = tAOFmax(derated) + { - tJIT(duty)min - tERR(6-10per)min }