Fast Recovery PSEI 2x30 IFAVM = 2x 28 A
Epitaxial Diode (FRED) PSEI 2x31 VRRM = 1200 V
trr = 40 ns
Features
•2 independent FRED in 1 package
•Isolation voltage 3600 V∼
•Planar glass passivated chips
•Low forward voltage drop
•Leads suitable for PC board
soldering
•Very short recovery time
•Soft recovery behaviour
•UL registered, E 148688
Applications
•Antiparallel diode for high frequency
switching devices
•Anti saturation diode
•Snubber diode
•Free wheeling diode in converters
and motor control circuits
•Rectifiers in switch mode power
supplies (SMPS)
•Inductive heating and melting
•Uninterruptible power supplies (UPS)
•Ultrasonic cleaners and welders
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
•Low noise switching
•Small and light weight
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
ECO-PACTM 1
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Data according to IEC 60747 refer to a single diode
unless otherwise stated
*IFAVM rating includes blocking losses at TVJM;
VR=0.8 VRRM; duty cycle d=0.5
Preliminary Data Sheet
VRSM VRRM Type
(V) (V)
1200 1200 PSEI 2x30/12 PSEI 2x31/12
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 70 A
IFAVM*TC = 50 °C, rectangular, d=0.5 28 A
IFRM tP<10µs; rep.rating, pulse width limited by TVJM 375 A
IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 200 A
VR = 0 t = 8.3 ms (60 Hz), sine 210 A
TVJ = 125 °C t = 10 ms (50 Hz), sine 185 A
VR = 0 t = 8.3 ms (60 Hz), sine 195 A
∫∫
∫∫
∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 200 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 180 A²s
TVJ = 125 °C t = 10 ms (50 Hz), sine 170 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 160 A²s
TVJ -40... + 150 °C
TVJM 150 °C
Tstg -40... + 150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V∼
IISOL ≤ 1 mA t = 1 s 3600 V∼
MdMounting torque (M4) 1.5 - 1.8 Nm
14 - 16 lb.in.
Weight typ. 16 g
Symbol Test Conditions Characteristic Value
IRTVJ = 25°C, VR=VRRM max. 750 µA
TVJ = 25°C, VR=0.8.VRRM max. 250 µA
TVJ = 125°C, VR=0.8.VRRM max. 7 mA
VFIF = 30 A, TVJ = 150 °C max. 2.20 V
TVJ = 25 °C max. 2.55 V
VTO For power-loss calculations only 1.65 V
rT18.2 mΩ
RthJC per diode; max. 1.25 K/W
RthCH per diode; typ. 0.05 K/W
IRM IF=30A; -diF/dt=240A/µs; VR=540V typ. 16 A
L≤0.05 mH; TVJ= 100°C
trr IF=1A; -diF/dt=100A/µs; VR=30V; typ. 40 ns
TVJ= 25°C
dsCreeping distance on surface 11.2 mm
dACreeping distance in air 11.2 m m
aMax. allowable acceleration 50 m/s²
2x302x30
2x302x30
2x30 2x312x31
2x312x31
2x31
http://store.iiic.cc/