© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 1 1Publication Order Number:
MAC16HC/D
MAC16HCD, MAC16HCM,
MAC16HCN
Preferred Device
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
motor controls, heating controls or dimmers; or wherever full−wave,
silicon gate−controlled devices are needed.
Features
•High Commutating di/dt and High Immunity to dv/dt @ 125°C
•Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
•Blocking Voltage to 800 Volts
•On−State Current Rating of 16 Amperes RMS at 80°C
•High Surge Current Capability − 150 Amperes
•Industry Standard TO−220AB Package for Ease of Design
•Glass Passivated Junctions for Reliability and Uniformity
•Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetit iv e Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open) MAC16HCD
MAC16HCM
MAC16HCN
VDRM,
VRRM
400
600
800
V
On−State RMS Current
(Full Cycle Sine Wave 50 to 60 Hz;
TC = 80°C)
IT(RMS) 16 A
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C) ITSM 150 A
Circuit Fusing Consideration (t = 8.33 ms) I2t 93 A2sec
Peak Gate Power
(Pulse Width ≤1.0 ms, TC = 80°C) PGM 20 W
Average Gate Power
(t = 8.3 ms, TC = 80°C) PG(AV) 0.5 W
Operating Junction Temperature Range TJ−40 to +125 °C
Storage Temperature Range Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TRIACS
16 AMPERES RMS
400 thru 800 VOLTS
TO−220AB
CASE 221A−09
STYLE 4
1
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MAC16HCxG
AYWW
MARKING
DIAGRAM
x = D, M, or N
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
23
MT1
G
MT2
PIN ASSIGNMENT
1
2
3 Gate
Main Terminal 1
Main Terminal 2
4Main Terminal 2
Preferred devices are recommended choices for future use
and best overall value.
Device Package Shipping
ORDERING INFORMATION
MAC16HCD TO−220AB 50 Units / Rail
MAC16HCN TO−220AB 50 Units / Rail
MAC16HCDG TO−220AB
(Pb−Free) 50 Units / Rail
MAC16HCNG TO−220AB
(Pb−Free) 50 Units / Rail
MAC16HCM TO−220AB 50 Units / Rail
MAC16HCMG TO−220AB
(Pb−Free) 50 Units / Rail
MAC16HCD, MAC16HCM, MAC16HCN
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2
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
T he rm a l Resistance, Junction−to−Case
Junction−to−Ambient RqJC
RqJA
2.2
62.5 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL260 °C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current TJ = 25°C
(VD = Rated VDRM, VRRM, Gate Open) TJ = 125°CIDRM,
IRRM −
−−
−0.01
2.0 mA
ON CHARACTERISTICS
Peak On−State Voltage (Note 2) (ITM = "21 A Peak) VTM − − 1.6 V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT 10
10
10
16
18
22
50
50
50
mA
Holding Current (VD = 12 V, Gate Open, Initiating Current = "150 mA) IH− 20 50 mA
Latch Current (VD = 12 V, IG = 50 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL−
−
−
33
36
33
60
80
60
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT 0.5
0.5
0.5
0.80
0.73
0.82
1.5
1.5
1.5
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 6A, Commutating dv/dt = 20 V/ms, CL = 10 mF
Gate Open, TJ = 125°C, f = 250 Hz, with Snubber) LL = 40 mH
(di/dt)c 15 − − A/ms
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 750 − − V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz di/dt − − 10 A/ms
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
MAC16HCD, MAC16HCM, MAC16HCN
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3
+ Current
+ Voltage
VTM
IH
Symbol Parameter
VDRM Peak Repetitive Forward Off State Voltage
IDRM Peak Forward Blocking Current
VRRM Peak Repetitive Reverse Off State Voltage
IRRM Peak Reverse Blocking Current
Voltage Current Characteristic of Triacs
(Bidirectional Device)
IDRM at VDRM
on state
off state
IRRM at VRRM
Quadrant 1
MainTerminal 2 +
Quadrant 3
MainTerminal 2 − VTM
IH
VTM Maximum On State Voltage
IHHolding Current
MT1
(+) IGT
GATE
(+) MT2
REF
MT1
(−) IGT
GATE
(+) MT2
REF
MT1
(+) IGT
GATE
(−) MT2
REF
MT1
(−) IGT
GATE
(−) MT2
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
MT2 POSITIVE
(Positive Half Cycle)
+
Quadrant III Quadrant IV
Quadrant II Quadrant I
Quadrant Definitions for a Triac
IGT −+ IGT
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
MAC16HCD, MAC16HCM, MAC16HCN
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4
120°
TJ, JUNCTION TEMPERATURE (°C)
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
TJ, JUNCTION TEMPERATURE (°C)
IGT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (VOLT)
−40 −10 20 50 80 110 125
100
1
Q3
Q1
Q2
1.10
0.40
Q1
Q2
Q3
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
HOLDING CURRENT (mA)
TJ, JUNCTION TEMPERATURE (°C)
MT2 POSITIVE
MT2 NEGATIVE
LATCHING CURRENT (mA)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Typical Holding Current
versus Junction Temperature Figure 4. Typical Latching Current
versus Junction Temperature
−25 5 35 65 95
10
100
1
10
100
1
10
−40 −10 20 50 80 110 125−25 5 35 65 95 −40 −10 20 50 80 110 125−25 5 35 65 95
0.50
0.60
0.70
0.80
0.90
1.00
−40 −10 20 50 80 110 125−25 5 35 65 95
Q2
Q1
Q3
Figure 5. Typical RMS Current Derating
IT(RMS), RMS ON-STATE CURRENT (AMP)
125
110
95
80
121086420
TC, CASE TEMPERATURE ( C)°
Figure 6. On-State Power Dissipation
IT(AV), AVERAGE ON-STATE CURRENT (AMP)
121086420
18
16
14
12
10
8
6
4
2
P(AV), AVERAGE POWER DISSIPATION (WATTS)
0
180°
70
24
DC
DC
60°
90°
120°
180°
30°
105
90
75
115
100
85
120
1614
90°
60°, 30°
14 16
20
22
MAC16HCD, MAC16HCM, MAC16HCN
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5
Figure 7. Typical On-State Characteristics
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
100
0
IT, INSTANTANEOUS ON-STATE CURRENT (AMP)
0.5 1 1.5 2 2.5 3 3.5
10
1
0.1
MAXIMUM @ TJ = 125°C
TYPICAL @
TJ = 25°C
MAXIMUM @ TJ = 25°C
Figure 8. Typical Thermal Response
t, TIME (ms)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
0.1
0.01 1000010001001010.1
MAC16HCD, MAC16HCM, MAC16HCN
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 −−− 1.15 −−−
Z−−− 0.080 −−− 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
TO−220AB
CASE 221A−09
ISSUE AA
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MAC16HC/D
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