1
Item Symbol Ratings Unit
Drain-source voltage V DS 200
VDSX *5 170
Continuous drain current ID±45
Pulsed drain current ID(puls] ±180
Gate-source voltage VGS ±30
Non-repetitive Avalanche current IAS *2 45
Maximum Avalanche Energy EAS *1 258.9
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 1.67
Tc=25°C 270
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3596-01L,S,SJ
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=200V VGS=0V
VDS=160V VGS=0V
VGS=±30V
ID=15A VGS=10V
ID=15A VDS=25V
VCC=48V ID=15A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
mΩ
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 0.463
75.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=100V
ID=30A
VGS=10V
L=205µH Tch=25°C
IF=30A VGS=0V Tch=25°C
IF=30A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
200
3.0 5.0
25
250
10 100
50 66
12.5 25
1960 2940
260 390
18 27
20 30
17 26
53 80
19 29
51 76.5
15 22.5
16 24
45 1.10 1.65
0.19
1.4
-55 to +150
Outline Drawings (mm)
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<*4 VDS 200V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
P4
200304
*1 L=205µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch 150°C
=
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2
Characteristics
2SK3596-01L,S,SJ FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
024681012
0
20
40
60
80
100
120
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
0 20 40 60 80 100 120
0.00
0.05
0.10
0.15
0.20
7.0V
6.5V
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Allowable Power Diss i pat ion
PD=f(Tc)
PD [W]
Tc [°C]
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
800
IAS=18A
IAS=27A
IAS=45A
EAS [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. star ting Tch
E(AS)=f(starting Tch):Vcc=48V
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3
2SK3596-01L,S,SJ FUJI POWER MOSFET
VGS=f(Qg):ID=30A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=48V, VGS=10V, RG=10Ω
-50 -25 0 25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
200
RDS(on) [ m Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=15A,VGS=10V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C]
0 1020304050607080
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
Vcc= 100V
10-1 100101102
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
10-1 100101102
100
101
102
103
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
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4
2SK3596-01L,S,SJ FUJI POWER MOSFET
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starti ng Tch=25°C,Vcc=48V
Avalanche Current I AV [A ]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maxim um T ransient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
Outline Drawings (mm)
Type(S) Type(SJ)
1 2 3 1
2
3
Type(L)
1
2
3
1 2 3
4
4
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