NVD6416ANLT4G-VF01 - ON SEMICONDUCTOR

May, 2019 − Rev. 6

1Publication Order Number:

NTD6416ANL/D

NTD6416ANL, NVD6416ANL

MOSFET – Power,

N-Channel

100 V, 19 A, 74 mW

Features

•Low RDS(on)

•High Current Capability

•100% Avalanche Tested

•NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage VDSS 100 V

Gate−to−Source Voltage − Continuous VGS ±20 V

Continuous Drain

Current

Steady

State

TC = 25°CID19 A

TC = 100°C 13

Power Dissipation Steady

State

TC = 25°C PD71 W

Pulsed Drain Current tp = 10 msIDM 70 A

Operating and Storage Temperature Range TJ, Tstg −55 to

+175

°C

Source Current (Body Diode) IS19 A

Single Pulse Drain−to−Source Avalanche

Energy (VDD = 50 Vdc, VGS = 10 Vdc,

IL(pk) = 18.2 A, L = 0.3 mH, RG = 25 W)

EAS 50 mJ

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

TL260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Unit

Junction−to−Case (Drain) − Steady State RqJC 2.1 °C/W

Junction−to−Ambient − Steady State (Note 1) RqJA 47

1. Surface mounted on FR4 board using 1 sq in pad size,

(Cu Area 1.127 sq in [2 oz] including traces).

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MARKING DIAGRAM

& PIN ASSIGNMENTS

A = Assembly Location*

Y = Year

WW = Work Week

6416ANL = Device Code

G = Pb−Free Package

DPAK

CASE 369AA

STYLE 2

AYWW

16ANLG

4 Drain

Source

Gate 2

Drain

IPAK

CASE 369D

STYLE 2

4 Drain

Gate

Drain

Source

AYWW

16ANLG

V(BR)DSS RDS(on) MAX ID MAX

100 V 74 mW @ 10 V 19 A

See detailed ordering and shipping information on page 5 of

this data sheet.

ORDERING INFORMATION

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

NTD6416ANL, NVD6416ANL

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA100 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ120 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 100 V

TJ = 25°C 1.0 mA

TJ = 125°C 10

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 2.2 V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ5.4 mV/°C

Drain−to−Source On−Resistance RDS(on) VGS = 4.5 V, ID = 10 A 70 80 mW

VGS = 10 V, ID = 10 A 62 74

VGS = 10 V, ID = 19 A 68 74

Forward Transconductance gFS VDS = 5 V, ID = 10 A 18 S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance CISS

VGS = 0 V, f = 1.0 MHz, VDS = 25 V

700 1000 pF

Output Capacitance COSS 110

Reverse Transfer Capacitance CRSS 50

Total Gate Charge QG(TOT)

VGS = 10 V, VDS = 80 V, ID = 19 A

25 40 nC

Threshold Gate Charge QG(TH) 0.7

Gate−to−Source Charge QGS 2.4

Gate−to−Drain Charge QGD 9.6

Plateau Voltage VGP 3.2 V

Gate Resistance RG2.4 W

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time td(on)

VGS = 10 V, VDD = 80 V,

ID = 19 A, RG = 6.1 W

7.0 ns

Rise Time tr16

Turn−Off Delay Time td(off) 35

Fall Time tf40

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V, IS = 19 A TJ = 25°C 0.9 1.2 V

TJ = 125°C 0.72

Reverse Recovery Time tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 19 A

50 ns

Charge Time Ta38

Discharge Time Tb14

Reverse Recovery Charge QRR 112 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

NTD6416ANL, NVD6416ANL

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TYPICAL CHARACTERISTICS

012345

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 1. On−Region Characteristics

VGS = 2.4 V

2.8 V

3.0 V

3.2 V

3.6 V

4.5 V

10 V

TJ = 25°C

012345

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 2. Transfer Characteristics

TJ = 125°C

TJ = −55°C

VDS w 10 V

TJ = 25°C

0.06

0.07

0.08

0.09

0.1

0.11

246810

VGS, GATE−TO−SOURCE VOLTAGE (V)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

Figure 3. On−Region versus Gate−To−Source

Voltage

ID = 19 A

TJ = 25°C

0.050

0.055

0.060

0.065

0.070

0.075

0.080

2 6 10 14 1

TJ = 25°C

ID, DRAIN CURRENT (A)

Figure 4. On−Region versus Drain Current and

Gate−To−Source Voltage

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

VGS = 4.5 V

VGS = 10 V

0.5

1.5

2.5

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERTURE (°C)

RDS(on), DRAIN−TO−SOURCE RESISTANCE

(NORMALIZED)

Figure 5. On−Resistance Variation with

Temperature

VGS = 10 V

ID = 19 A

100

1000

10000

10 20 30 40 50 60 70 80 90 10

IDSS, LEAKAGE (nA)

TJ = 125°C

TJ = 150°C

VGS = 0 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drian−to−Source Leakage Current

versus Voltage

NTD6416ANL, NVD6416ANL

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TYPICAL CHARACTERISTICS

200

400

600

800

1000

1200

1400

0 102030405060708090100

C, CAPACITANCE (pF)

TJ = 25°C

VGS = 0 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

Ciss

Coss

Crss

0 5 10 15 20 25

Qgd

Qgs

Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source Voltage and

Drain−to−Source Voltage versus Total Charge

VDS = 80 V

ID = 19 A

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

100

1000

1 10 100

t, TIME (ns)

RG, GATE RESISTANCE (W)

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

td(off)

td(on)

VDS = 80 V

ID = 19 A

VGS = 10 V

0.5 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95 1.0

IS, SOURCE CURRENT (A)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage versus

Current

TJ = 25°C

VGS = 0 V

0.001

0.1

100

0.1 10 100 1000

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

VGS = 10 V

SINGLE PULSE

TC = 25°C

10 mS

100 mS

1 mS

10 mS

ID, DRAIN CURRENT (A)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

25 50 75 100 125 150 175

EAS, SINGLE PULSE DRAIN−TO−

SOURCE AVALANCHE ENERGY (mJ)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 12. Resistive Switching Time Variation

versus Gate Resistance

ID = 18.2 A

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

VDS

VGS

0.01

NTD6416ANL, NVD6416ANL

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TYPICAL CHARACTERISTICS

Figure 13. Thermal Response (NTD6416ANL DPAK PCB Cu Area 720 mm2 PCB Cu thk 2 oz)

t, PULSE TIME (sec)

100

50% Duty Cycle

SINGLE PULSE

RqJA(t) = r(t) RqJA

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJA(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.1

0.01

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

RqJA (°C/W)

20%

10%

ORDERING INFORMATION

Device Package Shipping†

NTD6416ANLT4G DPAK

(Pb−Free)

2500 / Tape & Reel

NTD6416ANL−1G IPAK

(Pb−Free)

75 Units / Rail

NVD6416ANLT4G* DPAK

(Pb−Free)

2500 / Tape & Reel

NVD6416ANLT4G−VF01* DPAK

(Pb−Free)

2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification Brochure, BRD8011/D.

*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

NTD6416ANL, NVD6416ANL

www.onsemi.com

PACKAGE DIMENSIONS

DPAK (SINGLE GUAGE)

CASE 369AA

ISSUE B

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

NTD6416ANL, NVD6416ANL

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PACKAGE DIMENSIONS

123

−T−

SEATING

PLANE

D3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z0.155 −−− 3.93 −−−

IPAK

CASE 369D

ISSUE C

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

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NTD6416ANL/D

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