DMP31D0UFB4-7B - DIODES Incorporated

DMP31D0UFB4

Datasheet number: DS35587 Rev. 1 - 2 1 of 7

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DMP31D0UFB4

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS Max RDS(on) Max ID

@ TA = 25°C

-30V

1Ω @ VGS = -4.5V -0.76A

1.5Ω @ VGS = -2.5V -0.62A

2Ω @ VGS = -1.8V -0.54A

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

(RDS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

• Load Switch in portable electronics

Features and Benefits

• Footprint of just 0.6mm2 – thirteen times smaller than SOT23

• 0.4mm profile – ideal for low profile applications

• Low Gate Threshold Voltage

• Fast Switching Speed

• ESD Protected Gate 2KV

• “Lead Free”, RoHS Compliant (Note 1)

• Halogen and Antimony Free. "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: X2-DFN1006-3

• Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish – NiPdAu over Copper leadframe. Solderable

per MIL-STD-202, Method 208

• Weight: 0.001 grams (approximate)

Ordering Information (Note 3)

Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel

DMP31D0UFB4-7B P6 7 8 10,000

Notes: 1. No purposefully added lead

2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

X2-DFN1006-3

Equivalent Circuit

Top View

Internal Schematic

Bottom View

Source

Gate

Protection

Diode

Gate

Drain

DS

G

P6 = Product Type Marking Code

DMP31D0UFB4-7B

P6

Top View

Bar Denotes Gate

And Source Side

DMP31D0UFB4

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Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS -30 V

Gate-Source Voltage VGSS ±8 V

Continuous Drain Current Steady

State

TA = 25°C (Note 5)

TA = 85°C (Note 5)

TA = 25°C (Note 4) ID -0.76

-0.55

-0.54 A

Pulsed Drain Current (Note 5) IDM 2 A

Thermal Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Value Unit

Power Dissipation (Note 4) PD 0.46 W

(Note 5) 0.92

Thermal Resistance, Junction to Ambient (Note 4) RθJA 271 °C/W

(Note 5) 136

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

0

1

2

3

4

5

6

7

8

9

10

0.001 0.01 0.1 1 10 100 1,000

P

,

P

EAK

T

R

ANSIEN

T

P

O

IWE

R

(W)

(PK)

t1, PULSE DURAT ION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

Single Pulse

R = 262 C/W

R = r * R

T - T = P * R

θ

θθ

θ

JA

JA(t) (t) JA

JA JA(t)

°

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000

0.001

0.01

0.1

r(t),

T

R

ANSIEN

T

H

E

R

MAL

R

ESIS

T

AN

C

E

1

R (t) = r(t) * R

θθ

JA JA

R = 262°C/W

Duty Cycle, D = t1/ t2

θ

JA

D = 0.7

D = 0.9

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

t1, PULSE DURATION TIMES (sec)

Fig . 2 Tran sient Thermal Resis tance

DMP31D0UFB4

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Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test C ondition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage BVDSS -30 - - V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current TJ = 25°C IDSS - - -1

μA VDS = -30V, VGS = 0V

Gate-Source Leakage IGSS - - ±3

μA VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage VGS

(

th

)

-0.5 - -1.1 V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance RDS (ON) - - 1

Ω VGS = -4.5V, ID = -400mA

1.5 VGS = -2.5V, ID = -200mA

2 VGS = -1.8V, ID = -100mA

Forward Transfer Admittance |Yfs| 50 - - mS

VDS = -3V, ID = -300mA

Diode Forward Voltage VSD - - -1.2 V

VGS = 0V, IS = -300mA

DYNAMIC CHARACTERISTICS

Input Capacitance Ciss - 76 -

pF VDS = -15V, VGS = 0V,

f = 1.0MHz

Output Capacitance Coss - 9 -

pF

Reverse Transfer Capacitance Crss - 6.43 - pF

Gate Resistance R

g

- 166.9 - Ω VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge Q

g

0.9 -

nC VGS = -4.5V, VDS = -15V,ID = -1A

Total Gate Charge Q

g

- 1.5 -

nC VGS = -8V, VDS = -15V,

ID = -1A

Gate-Source Charge Q

g

s - 0.1 -

nC

Gate-Drain Charge Q

g

d - 0.2 -

nC

Turn-On Delay Time tD

(

on

)

- 4.98 - ns VDD = -10V, RL = 10Ω

VGS = -4.5V, RG = 6Ω

Turn-On Rise Time t

r

- 5.85 - ns

Turn-Off Delay Time tD

(

off

)

- 35.71 - ns

Turn-Off Fall Time tf - 16.64 - ns

Notes: 7. Short duration pulse test used to minimize self-heating effect.

Typical Electrical Characteristics

0

0.2

0.4

0.6

0.8

1.0

01 2345

-V , DRAIN -SOURCE VOLTAGE (V)

F ig . 3 Ty pical Output Characteri stic s

DS

-I , D

R

AIN

C

U

R

EN

T

(A)

D

V = 4.5V

GS

V = 2.5V

GS

V = 1.8V

GS

V = 1.5V

GS

V = 1.2V

GS

0

0.2

0.4

0.6

0.8

1.0

0 0.5 1.0 1.5 2.0

-V , GA TE -SOURCE VOLTAGE (V)

GS

Fig. 4 Typical Transfer Characteristics

-I , D

R

AIN

C

U

R

EN

T

(A)

D

T = 150 C

A

°

T = 125 C

A

°

T = 85C

A

°

T = 25C

A

°

T = -55C

A

°

V = -5.0V

DS

DMP31D0UFB4

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0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 0.2 0.4 0.6 0.8 1.0

-I , DRAIN SOURCE CURRENT (A)

Fig. 5 Typical On-Resistance vs.

Drain Current an d G ate Voltage

D

R

,D

R

AIN-S

O

U

R

CE

O

N-

R

ESIST ANCE ( )

DS(ON)

Ω

-V , GATE SOURCE VOLTAGE(V)

Gate Volt ag e

GS

Fig. 6 Typical On-Resistance vs.

Drain Current and

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

02468

R

,D

R

AIN-S

O

U

R

C

E

O

N-

R

ESIS

T

AN

C

E ( )

DS(ON)

Ω

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0 0.2 0.4 0.6 0.8 1.0

-I , DRAIN SOURCE CURRENT (A)

Fig. 7 Typical On-Resistance vs.

Drain Current an d Temp er ature

D

R

, D

R

AIN-S

O

U

R

CE

O

N-

R

ESISTANCE( )

DS(ON)

Ω

T = -55C

A

°

T = 25C

A

°

T = 85C

A

°

T = 125C

A

°

T = 150C

A

°

V = -4.5V

GS

0.5

0.7

0.9

1.1

1.3

1.5

1.7

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig . 8 On - Resistance Variati on wi t h Temp er ature

R

, D

R

AIN-S

O

U

R

C

E

ON-RESIST ANCE (NORMALIZED)

DS(ON)

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T , JUNCTION TEMPERATURE ( C)

J

°

Fig. 9 On-Resistance V a riation with Temperature

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-

R

ESIS

T

A

N

C

E ( )

DS(on)

Ω

V = -4.5V

I= A

GS

D

-500m

V=5V

I= A

GS

D

-2.

-250m

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERA TURE (°C)

Fig. 1 0 G at e Thr eshold Variat ion vs. Ambi ent Te m perature

A

V,

G

A

T

E

T

H

R

ES

H

O

LD V

O

L

T

A

G

E(V)

GS(TH)

DMP31D0UFB4

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0

0.2

0.4

0.6

0.8

1.0

0.4 0.6 0.8 1.0 1.2

-V , SOURCE-DRAIN VOLTAGE (V)

Fig. 11 Diode Forward Voltage vs. Current

SD

-I , S

O

U

R

C

E

C

U

R

EN

T

(A)

S

0

20

40

60

80

100

120

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 12 Typical Junction Capacitance

DS

C

, J

U

N

C

T

I

O

N

C

A

P

A

C

I

T

AN

C

E (p

F

)

T

C

oss

C

rss

C

iss

f = 1MHz

0.1

1

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 13 Typical Drain-Source Leakage Current vs. Voltage

DS

- I , LEAKA

G

E

C

U

R

E

N

T

(nA)

DSS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

0

2

4

6

8

0 0.4 0.8 1.2 1.6 2.0

Q , TOTAL GATE CHARGE (nC)

Fig. 14 Gate-Charge Characteristics

g

-V ,

G

A

T

E-S

O

U

R

C

E V

O

L

T

A

G

E (V)

GS

DMP31D0UFB4

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Package Outline Dimensions

Suggested Pad Layout

X2-DFN1006-3

Dim Min Max Typ

A ⎯0.40 ⎯

A1 0 0.05 0.02

b1 0.10 0.20 0.15

b2 0.45 0.55 0.50

D 0.95 1.075 1.00

E 0.55 0.675 0.60

e ⎯ ⎯ 0.35

L1 0.20 0.30 0.25

L2 0.20 0.30 0.25

L3 ⎯ ⎯ 0.40

All Dimensions in mm

Dimensions Value (in mm)

Z 1.1

G1 0.3

G2 0.2

X 0.7

X1 0.25

Y 0.4

C 0.7

L2

A1

Eb2

L1L3

D

e

b1

A

Y

C

G1

G2

X

1

Z

DMP31D0UFB4

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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