SFH 4500
SFH 4505
Leistungsstarke IR-Lumineszenzdiode
High Power Infrar ed Emitter
Vorläufige Daten / Preliminary Data
2003-10-29 1
SFH 4500 SFH 4505
Wesentliche Merkmale
Leistungsstarke GaAs-LED (40mW)
Hoher Wirkunsgrad bei kleinen Strömen
Typische Peakwellenlänge 950nm
Engwinkliger SMT-Sidelooker
IR Reflow Löten geeignet
Feuchte-Empfindlichkeitsstufe 3 nach JEDEC
Standard J-STD-020A
Anwendungen
Bauteil mit hoher Strahlstärke zur
Oberflächenmontage (SMT)
Schnelle Datenübertragung mit
Übertragungsraten bis 100 Mbaud
(IR Tastatur, Joystick, Multimed ia)
Analoge und digitale Hi-Fi Audio- und
Videosignalübertragung
Alarm- und Sicherungssysteme
IR Freiraumübertragung
IR-Scheinwerfer für Kameras
Typ
Type Bestellnummer
Ordering Code Strahlstärkegruppierung 1) (IF = 100mA, tp = 20 ms)
Radiant intensity grouping 1)
Ie (mW/sr)
1) gemessen bei einem Raumw i nk el = 0. 01 s r
measured at a solid angle of = 0. 01 sr
SFH 4500 Q62702-P5163 85 (>25)
SFH 4505 Q62702-P5164 85 (>25)
Features
High Power GaAs-LED (40mW)
High Efficiency at low currents
Typical peak wavelength 950nm
Narrow angle SMT-Sidelooker
Suitable for IR reflow soldering
Moisture Sensitivity Level 3 according to
JEDEC Standard J-STD-020A
Applications
Device with high radiant intensity suitable for
surface mounting (SMT)
High data transmission rate up to 100 Mbaud
(IR keyboard, Joystick, Multimedia)
Analog and digi tal Hi-Fi audi o an d vi deo s ignal
transmission
Alarm and safety equipment
IR free air transmission
IR spotlight for cameras
2003-10-29 2
SFH 4500, SFH 4505
Grenzwerte (TA = 25 °C)
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Sperrspannung
Reverse voltage VR3V
Durchlaßstrom
Forward current IF (DC) 100 mA
Stoßstrom
Surge current
tp = 10 µs, D = 0
IFSM 2.2 A
Verlustleistung
Power dissipation Ptot 180 mW
Wärmewiderstand Sperrschicht - Umgebung,
freie Beinchenlänge max. 10 mm
Thermal resistance junction - ambient,
lead length between package bottom and PCB
max. 10 mm
RthJA 375 K/W
SFH 4500, SFH 4505
2003-10-29 3
Kennwerte (TA = 25 °C)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der Strahlung
Wavelength of peak emission
IF = 100 mA, tp = 20 ms
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax
Spectral bandwidth at 50% of Imax
IF = 100 mA, tp = 20 ms
∆λ 40 nm
Abstrahlwinkel
Half angle ϕ± 10 Grad
deg.
Aktive Chipfläche
Active chip area A0.09 mm2
Abmessungen der aktiven Chipfläche
Dimension of the active chip area L×B
L×W0.3 ×0.3 mm
Schaltzeiten, Ie von 10% auf 90% und
von 90% auf 10%
Switching time s, Ie from 10% to 90% and
from 90% to 10%
IF = 100 mA, tP = 20 ms, RL = 50
tr, tf10 ns
Kapazität
Capacitance
VR = 0 V, f = 1 MHz
Co 35 pF
Durchlaβspannung
Forward voltage
IF = 100 mA, tp = 20 ms
IF = 1 A, tp = 100 µsVF
VF
1.5 (≤ 1.8)
3.2 (≤ 4.3) V
V
Sperrstrom
Reverse current
VR = 3 V
IR0.01 ( 10) µA
Gesamtstrahlungsfluß
Total radiant flux
IF = 100 mA, tp = 20 ms
Φe40 mW
Temperaturkoeffizient von Ie bzw. Φe
Temperature coefficient of Ie or Φe
IF = 100 mA
TCI 0.44 %/K
2003-10-29 4
SFH 4500, SFH 4505
Temperaturkoeffizient von VF
Temperature coefficient of VF
IF = 100 mA
TCV 1.5 mV/K
Temperaturkoeffizient von λ
Temperature coefficient of λ
IF = 100 mA
TCλ+ 0.2 nm/K
Strahlstärke Ie in Achsrichtung
gemessen bei einem Raumwinkel von = 0.01 sr
Radiant Intensity Ie in Axial Direction
measured at a solid angle of = 0.01 sr
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Strahlstärke
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie min
Ie typ
25
85 mW/sr
mW/sr
Strahlstärke
Radiant intensity
IF = 1 A, tp = 100 µs
Ie typ 550 mW/sr
Lötbedingungen
Soldering Conditions
Reflowlötung
Reflow Soldering Kolbenlötung (mit 1,5-mm-Kolbenspitze)
Iron Soldering (with 1.5-mm-bit)
Lötzonen-
temperatur
Temperature of
Soldering Zone
Maximale
Durchlaufzeit
Max. Transit Time
Temperatur
des Kolbens
Temperature
of the Solder-
ing Iron
Maximale
zulässige
Lötzeit
Max. Permis-
sible Solder-
ing Time
Abstand
Lötstelle
Gehäuse
Distance
between
Solder Joint
and Case
245 °C 10 s 300 °C3 s 1.5 mm
Kennwerte (TA = 25 °C) (contd)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 4500, SFH 4505
2003-10-29 5
Relati ve Sp ectral Emi ssi o n
Ierel = f (λ)
Forward Curr e nt IF = f (VF)
single pu ls e, tp = 20 µs
Permissible Pulse Handling
Capability IF = f (τ), TA = 25 °C,
duty cycle D = parameter
OHF00777
nm800
Ιerel
λ
0
850 900 950 1000 1100
20
40
60
80
100
OHF00784
10
-3
V
mA
0
Ι
F
V
F
0.5 11.5 22.5 33.5 4.5
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
OHF00041
10-5
F
I
T
P
t
=
D
P
t
T
p
t
F
I
0.005
0.01
0.02
0.05
D
10-4 10-3 10-2 10-1 100101 2
10s
0.1
0.2
0.5
1
=
5
-1
10
5
A
100
1
10
Radiant Intensity Ιe/Ιe (100 mA) = f (IF)
Single pulse , tp = 20 µs
Radiation Characteristic
Ierel = f (ϕ)
e
e (100 mA)
mA
OHF00809
F
Ι
ΙΙ
10 40
10 10 110 23
10
10
-3
10
-2
10
10
-1
0
10
2
0
0.2
0.4
1.0
0.8
0.6
ϕ
1.0 0.8 0.6 0.4
10˚20˚40˚ 30˚
OHF01019
50˚
60˚
70˚
80˚
90˚
100˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚
Max. Permissible Forward Current
IF = f (TA)
OHF01534
0
I
F
T
0
25
50
75
100
125
mA
10 20 30 40 50 60 70 80 ˚C 100
2003-10-29 6
SFH 4500, SFH 4505
Maßzeichnungen
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are s pecified as follo ws: mm (inch).
GEOY6960
3.9 (0.154)
4.5 (0.177)
Cathode
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
13.1 (0.516)
14.7 (0.579)
5.5 (0.217)
7.5 (0.295)
1.95 (0.077)
2.05 (0.081)
R((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
(-0.004...0.008)
3.7 (0.146)
3.3 (0.130)
2.8 (0.110)
2.4 (0.094)
Chip position
3.9 (0.154)
4.5 (0.177)
-0.1...0.2
SFH 4500
GEOY6961
3.9 (0.154)
4.5 (0.177)
Cathode
7.1 (0.280)
7.7 (0.303)
2.54 (0.100)
spacing
14.7 (0.579)
15.5 (0.610)
7.4 (0.291)
8.0 (0.315) ((3.2) (0.126))
5.4 (0.213)
6.0 (0.236)
((3.2) (0.126))
2.7 (0.106)
2.4 (0.094)
4.4 (0.173)
4.8 (0.189)
((R2.8 (0.110))
R2.05 (0.081)
1.95 (0.077)
Chip position
3.9 (0.154)
4.5 (0.177)
(-0.006...0.006)
-0.15...0.15
SFH 4505
SFH 4500, SFH 4505
2003-10-29 7
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
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components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause t he fail ure of tha t life -suppo rt dev ice or s ystem, or to affe ct i ts saf ety or effecti venes s of t hat device o r sy stem.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is reasonable t o as su m e th at the health of the user m ay be endangered.