> Hl (hal i Axial Lead Glass Packaged Silicon Schottky Mixer Diodes eRe 54 Description Three families of axial lead Schottky diodes are offered with diodes optimized for 100 MHz through 12 GHz. Low barrier diodes require the smallest local oscillator drive. Medium barrier diodes give good noise figure with normal local oscillator drive. High barrier diodes are best for high dynamic range mix- ers and upconverters. Features @ HIGH RELIABILITY @ SCREENING TO JANTXV LEVEL AVAILABLE @ LOW, MEDIUM AND HIGH BARRIER DIODES AVAILABLE @ LOW NOISE FIGURE THROUGH 12 GHz M/A-COM, Inc. a 43 South Ave, Burlington, MA 01803 a 800-366-2266 223Axial Lead Glass Packaged Silicon Schottky Mixer Diodes .gs . Specifications @ Ta = 25C This series of axial lead Schottky mixer diodes is designed for use in stripline or lumped element mixers from VHF through X band. Each diode is listed by barrier height, test frequency and noise figure. Low Barrier Mixer Diodes Maximum? Maximum* Zip Range Model! Test Frequency Noise Figure SWR Min./Max. Number Case Style? (GHz) (dB) (Volts) (Ohms) MA40103 54 9.375 6.5 1.5 250-450 MA40104 54 9.375 7.0 2.0 250-450 Medium Barrier Mixer Diodes Maximum? Maximum Z\F Range Model Test Frequency Noise Figure SWR Min./Max. Number Case Style? (GHz) (db) (Volts) (Ohms) MA4882 54 1.000 5.5 1.5 125-250 MA4883 54 1.000 6.5 1.6 125-250 MA4853 54 3.000 5.5 1.5 125-250 MA4852 54 3.000 6.5 1.5 125-250 MA4851 54 3.000 75 2.0 125-250 MA40153 54 9.375 6.5 1.5 250-450 MA40154 54 9.375 7.0 2.0 250-450 MA4856 54 9.375 7.5 2.0 200-400 MA4855 54 9.375 8.5 2.0 200-400 High Barrier Mixer Diodes Maximum? Maximum Zif Range Model Test Frequency Noise Figure SWR Min./Max. Number Case Style? (GHz) (dBm) (Volts) (Ohms) MA4E183 54 9.375 6.5 1.5 250-450 MA4E184 54 9.375 7.0 2.0 250-450 NOTES 4. All mixer diodes are available as matched pairs and can be ordered by ad- MAXIMUM RATINGS ding the suffix M to the diode model number. Bin matching is available upon request. The matching criteria is as follows: NF = 0.3 dB maximum Zip = 25 ohms maximum The maximum solder temperature is 230C for 5 seconds. Case styles other than those indicated are available upon request. Consult the factory. Test conditions for noise figure: PLo - 1 mW (for low and medium barrier) PLo ~ 2 mW (for high barrier) Fip - 30 MHz Nig = 1.5 dB RL = 22 Ohms . SWR for low and medium barrier diodes is tested at LO power of 1.0 mW. High barrier diodes are tested at LO power of 2.0 mW. RL = 22 ohms . IF impedance is measured by modulating the specified test frequency with a 1000 Hz signal. RL = 22 ohms. Low and medium barrier diodes are tested at an incident power level of 1.0 mW. High barrier diodes are tested at an incident power level of 2.0 mW. Nn o - on TEMPERATURE RATINGS Storage Temperature Operating Temperature POWER RATINGS Maximum Peak RF Power Maximum CW RF Power - 65C to + 150C - 65C ta + 150C L-S band, 1 watt at 1 us maximum C-X band, 0.5 watt at 1 us maximum (L-S Band) 250 mW (C-X Band) 150 mW SOLDER TEMPERATURE RATINGS Soldering Temperature 230C for 5 seconds within 1 mm of package M/A-COM, Inc. a 224 43 South Ave, Burlington, MA 01803 a 800-366-2266Axial Lead Glass Packaged Silicon Schottky Mixer Diodes Screened Diodes MIL-STD-19500 All Glass Axial Leaded Silicon Schottky mixer diodes can be screened to TX or TXV levels. INSPECTION Internal Visual High Temperature Life (Stabilization Bake) Thermal Shock Constant Acceleration Fine Leak Gross Leak Electrical HTRB Pre-Burn-In Electrical Burn-in Final Electricals and Delta PDA METHOD 2074 1032 1056 2006 1071 1071 1038 1038 CONDITION See Note 1 T = 24 Hours, Ta = 150C 20 cycles 65C to +125C, T extreme > 10 minutes 20,000 gs, Y1 direction H CorE See Note Ta = + 150C VR =80% Vb T 48 Hours Minimum See Note Condition B Ta = +25C T =96 Hours Minimum See Note Less Than 10% NOTE: Conditions and details of test depend on the specific model number. Information is available from the factory upon request. Typical Performance Curves 3mA ma LOW BARRIER | | fd | ~s 2mA imA M EDIUM BARRIER 1 | 1st HIGH BARRIER- = ms Vy. CURRENT o 10uA [ -20uA 30LA | I ~6 -5 -4 -3 -2 -1 FIGURE 1. i-V Characteristics and Barrier Heights for VOLTS Schottky Mixer Diodes 7.0 IF = 30 MHz Ne 2 o ol NOISE FIGURE (dB) vi wu 5.0 3 =1.5d0B Ru = 22 OHMS 5 7 3 11 0 0.20406 08 13615 17 FREQUENCY (GHz) FIGURE 3. Nominal Noise Figure vs. Frequency 9.0 TINT ToT Tt 10.0 LOW BARRIER TH a MEDIUM BARRIER = 8.0 \ Hui 9.0 Nw Hy HIGH 3 NN llearriel WM 7.0 + 8.0 n A Lt] a N Ne Cn Li i 60 f eH 7.0 Ww ec B50 6.0 az a @ 4.0/-LO FREQ = 9.375 GHz, 16.0 GHz 5.0 5 IF FREQ = 30 MHz 2 NF,p = 1.548 3.0 dee eeheetntcbebtth 4.0 01 05 0.1 0.5 1.0 5,010.0 LO POWER (mW) FIGURE 2. Schottky Barrier Noise Figure vs. LO Power 1200 rr a ee tien BARRIER _. 1000 + | a 2 M BARRIER z aco \ 4 MEDI BA w \ F, 9 = 9.375 GHz g \ < 600PN NS S R, = 100 OHMS uw M T=JD. uw et ]OUN D-2967 = = 400 = = uw ~ vow dannien 200 0 FIGURE 4. Nominal IF Impedance vs. Local Oscillator 2 5 10 20 5.0 LOCAL OSCILLATOR POWER (mW) Drive 10.0 (AP) Z7HD O'9L LV AHNSId 3SION M/A-COM, Inc. 43 South Ave, Burlington, MA 01803 800-366-2266 225