PD-95838E IRHMS57064 JANSR2N7470T1 60V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA) REF: MIL-PRF-19500/698 5 TECHNOLOGY R Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHMS57064 100 kRads(Si) 0.0076 45A* JANSR2N7470T1 IRHMS53064 IRHMS55064 IRHMS58064 300 kRads(Si) 500 kRads(Si) 1000 kRads(Si) 0.0076 0.0076 0.0080 45A* 45A* 45A* JANSF2N7470T1 JANSG2N7470T1 JANSH2N7470T1 Description Low-Ohmic TO-254AA Features IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight ESD Rating: Class 3B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Pre-Irradiation Value Parameter Units ID1 @ VGS = 12V, TC = 25C Continuous Drain Current 45* ID2 @ VGS = 12V, TC = 100C Continuous Drain Current 45* IDM @ TC = 25C Pulsed Drain Current 180 PD @TC = 25C Maximum Power Dissipation 208 W Linear Derating Factor 1.67 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 824 IAR Avalanche Current 45 mJ A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 4.3 V/ns TJ TSTG Operating Junction and Storage Temperature Range Lead Temperature Weight -55 to + 150 A C 300 ((0.063in./1.6mm from case for 10s) 9.3 (Typical) g *Current is limited by package For Footnotes refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2019-01-18 IRHMS57064 JANSR2N7470T1 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Symbol Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units 60 --- --- 0.067 --- --- V V/C Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA RDS(on) VGS(th) Gfs IDSS Static Drain-to-Source On-State Rsistance --- --- 0.0076 VGS = 12V, ID2 = 45A Gate Threshold Voltage Forward Transconductance Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- --- --- --- V S IGSS 2.0 42 --- --- --- --- --- --- --- --- --- --- --- QG QGS QGD td(on) tr td(off) tf Zero Gate Voltage Drain Current Ls +LD Total Inductance --- Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance --- 5640 --- 2410 --- 105 --- 1.04 6.8 4.0 --- 10 25 100 -100 150 75 50 35 125 70 50 A nA nC ns --- nH --- --- --- --- pF VDS = VGS, ID = 1.0mA VDS = 15V, ID2 = 45A VDS = 48V, VGS = 0V VDS = 48V,VGS = 0V,TJ =125C VGS = 20V VGS = -20V ID1 = 45A VDS = 30V VGS = 12V VDD = 30V ID1 = 45A RG = 2.35 VGS = 12V Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad VGS = 0V VDS = 25V = 100KHz f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- 45* ISM Pulsed Source Current (Body Diode) --- --- 180 VSD Diode Forward Voltage --- --- 1.2 V TJ = 25C,IS =45A, VGS = 0V trr Reverse Recovery Time --- --- 170 ns TJ = 25C, IF = 45A, VDD 50V Qrr Reverse Recovery Charge --- --- 760 nC di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A * Current is limited by package Thermal Resistance Symbol RJC RJCS RJA Parameter Min. Typ. Max. Junction-to-Case --- --- 0.60 Case -to- Sink --- 0.21 --- Junction-to-Ambient (Typical socket mount) --- --- 48 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25C, L = 0.81mH, Peak IL = 45A, VGS = 12V ISD 45A, di/dt 390A/s, VDD 60V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 2 International Rectifier HiRel Products, Inc. 2019-01-18 IRHMS57064 JANSR2N7470T1 Radiation Characteristics Pre-Irradiation IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Symbol Up to 500 kRads (Si)1 1000 kRads (Si)2 Parameter Min. Max. Min. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 60 --- 60 --- V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.0 1.5 4.0 V VDS = VGS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward --- 100 --- 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse --- -100 --- -100 nA VGS = -20V IDSS Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) --- 10 --- 25 A VDS = 48V, VGS = 0V --- 0.0061 --- 0.0071 VGS = 12V, ID2 = 45A --- 0.0076 --- 0.0080 VGS = 12V, ID2 = 45A Diode Forward Voltage --- 1.2 --- 1.2 V VGS = 0V, IS = 45A RDS(on) RDS(on) VSD 1. Part number IRHMS57064 (JANSR2N7470T1),IRHMS53064 (JANSF2N7470T1),IRHMS55064 (JANSG2N7470T1) 2. Part numbers IRHMS58064 (JANSH2N7470T1) IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Energy (MeV) Range (m) 38 5% 61 5% 84 5% 300 7.5% 330 7.5% 350 10% 38 7.5% 31 10% 28 7.5% Bias VDS (V) LET (MeV/(mg/cm2)) VDS (V) @VGS= 0V 60 46 35 @VGS= -5V 60 46 30 70 60 50 40 30 20 10 0 @VGS= -10V 60 35 25 @VGS= -15V 60 25 20 @VGS= -20V 30 15 14 LET=38 5% LET=61 5% LET=84 5% 0 -5 -10 -15 -20 Bias VGS (V) Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc. 2019-01-18 IRHMS57064 JANSR2N7470T1 Pre-Irradiation 1000 VGS TOP 15V 12V 10V 7.0V 6.0V 5.0V 4.5V BOTTOM 4.0V 100 10 1 4.0V 60s PULSE WIDTH Tj = 25C VGS 15V 12V 10V 7.0V 6.0V 5.0V 4.5V BOTTOM 4.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 1000 100 0.1 10 4.0V 60s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 1000 0.1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) T J = 150C T J = 25C 10 1 VDS = 25V 6s PULSE WIDTH 0.1 4 1000 4.5 5 5.5 6 6.5 ID = 45A 1.5 1.0 0.5 VGS = 12V 0.0 7 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 14000 VGS, Gate-to-Source Voltage (V) 8000 C iss 6000 C oss 4000 2000 40 60 80 100 120 140 160 Fig 4. Normalized On-Resistance Vs. Temperature VDS = 48V VDS = 30V VDS = 12V ID = 45A Coss = Cds + Cgd 10000 20 20 VGS = 0V, f = 1 MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd 12000 0 T J , Junction Temperature (C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 100 2.0 100 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 C rss 0 0 1 10 100 0 20 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 10 Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 VDS , Drain-to-Source Voltage (V) 40 60 80 100 120 140 160 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2019-01-18 IRHMS57064 JANSR2N7470T1 Pre-Irradiation 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 150C T J = 25C 10 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100s 1ms 10 Tc = 25C Tj = 150C Single Pulse VGS = 0V 0.1 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 DC 1 VSD , Source-to-Drain Voltage (V) 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2000 EAS , Single Pulse Avalanche Energy (mJ) 140 LIMITED BY PACKAGE 120 100 ID, Drain Current (A) 10ms 80 60 40 20 ID 20A 28.5A BOTTOM 45A TOP 1600 1200 800 400 0 0 25 50 75 100 125 25 150 50 75 100 125 150 Starting T J , Junction Temperature (C) T C , Case Temperature (C) Fig 10. Maximum Avalanche Energy Vs. Drain Current Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 International Rectifier HiRel Products, Inc. 2019-01-18 IRHMS57064 JANSR2N7470T1 Pre-Irradiation Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 6 Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2019-01-18 IRHMS57064 JANSR2N7470T1 Pre-Irradiation Case Outline and Dimensions - Low-Ohmic TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 6.60 [.260] 6.32 [.249] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X B 3 14.48 [.570] 12.95 [.510] 3X 3.81 [.150] 13.84 [.545] 13.59 [.535] 1.27 [.050] 1.02 [.040] 0.84 [.033] MAX. 1.14 [.045] 0.89 [.035] 0.36 [.014] 3.81 [.150] B A NOTES: 1. 2. 3. 4. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA. PIN ASSIGNMENTS 1 = DRAIN 2 = SOURCE 3 = GATE BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 7 International Rectifier HiRel Products, Inc. 2019-01-18 IRHMS57064 JANSR2N7470T1 Pre-Irradiation IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and analysis to determine suitability in the application environment to confirm compliance to your system requirements. With respect to any example hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties on non- infringement of intellectual property rights and any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's product and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any customer's technical departments to evaluate the suitability of the product for the intended applications and the completeness of the product information given in this document with respect to applications. 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