DATA SHEET NPN SILICON RF TRANSISTOR NE856M02 / 2SC5336 ED NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES * High gain: S21e = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz 2 Part Number Quantity IN U * 4-pin power minimold package with improved gain from the NE85634 / 2SC3357 ORDERING INFORMATION Supplying Form NE856M02-AZ 2SC5336-AZ 25 pcs (Non reel) * Magazine case NE856M02-AZ 2SC5336-T1-AZ 1 kpcs/reel * 12 mm wide embossed taping * Collector face the perforation side of the tape O NT Remark To order evaluation samples, please contact your nearby sales office. Unit sample quantity is 25 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V IC 100 mA 1.2 W DI SC Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 C Storage Temperature Tstg -65 to +150 C 2 Note Mounted on 16 cm x 0.7 mm (t) ceramic substrate (Copper plating) Because this product uses high-frequency technology, avoid excessive static electricity, etc. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. P10938EJ2V0DS00 (2nd edition) Date Published August 2001 NS CP(K) JEITA Part No. The mark * shows major revised points. NE856M02 / 2SC5336 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics ICBO VCB = 10 V, IE = 0 mA - - 1.0 A Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA - - 1.0 A 50 120 250 - - 6.5 - GHz - 12 - dB - 1.1 - dB - 1.8 3.0 dB - 0.5 0.8 pF hFE DC Current Gain Note 1 VCE = 10 V, IC = 20 mA RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 2 S21e VCE = 10 V, IC = 20 mA, f = 1 GHz Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz Reverse Transfer Capacitance Cre Note 2 IN U Insertion Power Gain VCB = 10 V, IE = 0 mA, f = 1 MHz Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION RH RF Marking RH RF 50 to 100 80 to 160 RE 125 to 250 DI SC hFE Value RE O NT Rank 2 ED Collector Cut-off Current Data Sheet P10938EJ2V0DS NE856M02 / 2SC5336 TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C) REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0 50 100 DC Current Gain hFE Gain Bandwidth Product fT (GHz) 5 10 5 5 10 20 VCE = 10 V f = 1 GHz 2 1 0.5 0.3 1 3 5 10 20 30 50 Collector Current IC (mA) INSERTION POWER GAIN, MAG vs. FREQUENCY INSERTION POWER GAIN vs. COLLECTOR CURRENT VCE = 10 V IC = 20 mA |S21e|2 10 0.2 0.4 30 3 50 MAG 0 3 Collector Current IC (mA) DI SC Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) 20 1 O NT 1 0.3 10 100 10 0.5 0.5 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 10 V 20 1.0 Collector to Base Voltage VCB (V) DC CURRENT GAIN vs. COLLECTOR CURRENT 50 2.0 150 Ambient Temperature TA (C) 200 f = 1 MHz 3.0 IN U 1.0 5.0 ED 2.0 Reverse Transfer Capacitance Cre (pF) Mounted on Ceramic Substrate (16 cm2 x 0.7 mm (t) ) 15 Insertion Power Gain |S21e|2 (dB) Total Power Dissipation Ptot (W) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.6 0.8 1.0 1.4 2.0 VCE = 10 V f = 1 GHz 10 5 0 1 3 5 10 20 30 50 100 Collector Current IC (mA) Frequency f (GHz) Data Sheet P10938EJ2V0DS 3 NE856M02 / 2SC5336 VCE = 10 V f = 1 GHz Noise Figure NF (dB) 6 5 4 3 2 1 0.5 1 5 10 Collector Current IC (mA) 50 -100 VCE = 10 V, Vin = 100 dBV/50 -90 Rg = Re = 50 IM2 : f = 90 + 100 MHz IM3 : f = 2 x 200 - 190 MHz -80 -70 -60 -50 -40 -30 IM2 20 30 40 50 60 Collector Current IC (mA) DI SC O NT Remark The graphs indicate nominal characteristics. 4 IM3 IN U 0 IM3, IM2 vs. COLLECTOR CURRENT ED 7 3rd Order Intermodulation Distortion IM3 (dB) 2nd Order Intermodulation Distortion IM2 (dB) NOISE FIGURE vs. COLLECTOR CURRENT Data Sheet P10938EJ2V0DS 70 NE856M02 / 2SC5336 S-PARAMETERS VCE = 10 V, IC = 20 mA S11 S21 S12 MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.519 0.413 0.413 0.345 0.331 0.320 0.302 0.296 0.283 0.285 0.265 0.260 0.263 0.242 0.252 0.253 0.253 0.257 0.262 0.273 -74.5 -112.9 -133.4 -145.7 -153.8 -159.6 -166.8 -169.2 -173.2 -179.8 175.2 174.1 166.0 163.0 160.1 154.0 149.9 147.2 143.0 141.5 30.931 18.965 13.324 10.164 8.177 6.834 5.832 5.107 4.600 4.200 3.930 3.979 3.741 3.115 2.844 2.595 2.420 2.305 2.171 2.049 131.9 111.5 101.9 95.9 91.8 89.1 86.7 84.3 83.1 82.3 80.8 78.5 68.6 66.6 65.7 64.1 63.7 63.0 62.6 61.2 0.017 0.031 0.038 0.045 0.055 0.064 0.074 0.077 0.088 0.097 0.100 0.109 0.114 0.119 0.133 0.140 0.158 0.165 0.172 0.177 S22 ANG. (deg.) MAG. ANG. (deg.) 60.6 61.9 65.1 69.8 71.8 70.9 73.9 74.4 71.2 74.5 76.3 75.9 76.8 78.3 82.0 81.0 80.9 82.2 80.5 78.3 0.752 0.570 0.465 0.428 0.436 0.438 0.434 0.429 0.436 0.455 0.467 0.529 0.551 0.509 0.510 0.496 0.515 0.518 0.536 0.524 -30.2 -39.7 -39.8 -40.1 -41.1 -43.5 -47.5 -47.8 -46.5 -47.8 -46.8 -47.4 -55.8 -55.8 -58.5 -55.2 -54.8 -56.5 -58.6 -61.5 O NT IN U (GHz) ED Frequency VCE = 10 V, IC = 40 mA Frequency S11 S21 S12 S22 MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) MAG. ANG. (deg.) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 0.378 0.317 0.308 0.299 0.297 0.288 0.274 0.261 0.255 0.260 0.243 0.239 0.245 0.216 0.235 0.243 0.233 0.242 0.249 0.260 -97.1 -131.8 -150.1 -158.7 -165.5 -169.2 -173.7 -177.3 178.9 173.0 169.4 169.3 160.3 157.8 155.3 148.8 146.0 144.6 141.9 140.4 32.908 18.819 12.955 9.775 7.899 6.586 5.607 4.879 4.435 4.024 3.801 3.827 3.587 2.980 2.726 2.537 2.348 2.200 2.073 1.986 123.3 106.0 97.5 93.1 89.8 87.6 85.2 83.5 82.2 81.4 80.6 78.2 68.4 66.0 66.1 64.0 64.2 63.5 63.3 61.7 0.017 0.027 0.035 0.042 0.052 0.061 0.071 0.081 0.092 0.095 0.098 0.109 0.117 0.125 0.137 0.143 0.159 0.163 0.171 0.184 71.1 71.2 71.8 78.1 78.5 79.1 77.4 76.4 76.5 77.6 77.1 78.3 78.0 80.3 86.5 80.6 81.2 80.4 81.7 77.5 0.665 0.487 0.398 0.393 0.399 0.407 0.400 0.415 0.399 0.440 0.441 0.494 0.517 0.486 0.500 0.474 0.496 0.491 0.534 0.535 -34.7 -38.7 -38.5 -36.9 -37.6 -39.9 -44.6 -47.4 -46.2 -44.3 -45.2 -46.2 -55.4 -54.5 -59.0 -53.7 -56.8 -53.6 -58.0 -61.3 DI SC (GHz) Data Sheet P10938EJ2V0DS 5 NE856M02 / 2SC5336 PACKAGE DIMENSIONS 4-PIN POWER MINIMOLD (UNIT: mm) 4.50.1 1.6 0.8 0.85 2.450.1 E IN U B 0.1 0.8 MIN. 1.55 3.950.25 0.3 1.50.1 C E 0.46 0.06 0.420.06 0.250.02 0.420.06 1.5 O NT 3.0 PIN CONNECTIONS DI SC E : Emitter C: Collector B : Base 6 ED 2.1 Data Sheet P10938EJ2V0DS NOTICE 5. 6. 7. 8. 9. 10. 11. 12. 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