UH1B, UH1C, UH1D
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Revision: 27-Mar-12 1Document Number: 89111
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds AC/AC and DC/DC converters in
high temperature conditions for both consumer and
automotive applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 100 V, 150 V, 200 V
IFSM 30 A
trr 25 ns
VF at IF = 1.0 A 0.76 V
TJ max. 175 °C
DO-214AC (SMA)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL UH1B UH1C UH1D UNIT
Device marking code HB HC HD
Maximum repetitive peak reverse voltage VRRM 100 150 200 V
Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load IFSM 30 A
Operating junction and storage temperature range TJ, TSTG - 55 to + 175 °C
UH1B, UH1C, UH1D
www.vishay.com Vishay General Semiconductor
Revision: 27-Mar-12 2Document Number: 89111
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Note
(1) Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mount
Note
(1) AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
IF = 0.6 A TA = 25 °C
VF (1)
0.90 -
V
IF = 1.0 A 0.96 1.05
IF = 0.6 A TA = 125 °C 0.70 -
IF = 1.0 A 0.76 0.90
Reverse current Rated VR
TA = 25 °C IR (2) -1.0
μA
TA = 125 °C 7.5 25
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A TA = 25 °C trr
13 25
ns
Typical reverse recovery time IF = 1.0 A, dI/dt = 50 A/μs,
VR = 30 V, Irr = 0.1 IRM 21 30
Typical softness factor (tb/ta)
IF = 1.0 A, dI/dt = 200 A/μs,
VR = 200 V TA = 125 °C
S0.8 - -
Typical reverse recovery current IRM 2.7 4.0 A
Typical stored charge Qrr 35 - nC
Typical junction capacitance 4.0 V, 1 MHz CJ17 - pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL UH1B UH1C UH1D UNIT
Typical thermal resistance RJA (1) 120 °C/W
RJM (1) 20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
UH1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
UH1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
UH1DHE3/61T (1) 0.064 61T 1800 7" diameter plastic tape and reel
UH1DHE3/5AT (1) 0.064 5AT 7500 13" diameter plastic tape and reel
UH1B, UH1C, UH1D
www.vishay.com Vishay General Semiconductor
Revision: 27-Mar-12 3Document Number: 89111
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1.2
95 105 115 125 135 145 155 165
Average Forward Rectified Current (A)
Lead Temperature (°C)
0.8
1.0
0.2
0.4
0.6
175
T
L
Measured
at the Cathode Band Terminal
1.0
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.81.0 1.2
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3 D = 0.5 D = 0.8
D = 1.0
D = t
p
/T t
p
T
0.9
0.8
0.7
0.6
0.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.81.0
0.01
0.1
1
10
100
1.2 1.8
TA = 150 °C
TA = 125 °C
TA = 175 °C
TA = 25 °C
1.61.4
TA = 100 °C
TA = 25 °C
TA = 150 °C
TA = 125 °C
TA = 100 °C
Percent of Rated Peak Reverse Voltage (%)
1000
100
1
0.1
0.01
10
10 40 60 80 100
Instantaneous Reverse Current (µA)
TA = 175 °C
20 50 70 9030
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
10
100
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1 101 100
1
10
1000
0.01
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
100
Junction to Ambient
UH1B, UH1C, UH1D
www.vishay.com Vishay General Semiconductor
Revision: 27-Mar-12 4Document Number: 89111
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.008 (0.203)
0.194 (4.93)
0.208 (5.28)
0.157 (3.99)
0.177 (4.50)
0.100 (2.54)
0.110 (2.79)
0.078 (1.98)
0.090 (2.29)
0.006 (0.152)
0.012 (0.305)
0.049 (1.25)
0.065 (1.65)
Cathode Band
0 (0)
DO-214AC (SMA)
Mounting Pad Layout
0.074 (1.88)
MAX.
0.208 (5.28)
REF.
0.066 (1.68)
MIN.
0.060 (1.52)
MIN.
0.030 (0.76)
0.060 (1.52)
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
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