2007-03-29
BFG135A
1
123
4
NPN Silicon RF Transistor*
• For low-distortion broadband output amplifier
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
70 mA to 130 mA
• Power amplifiers for DECT and PCN systems
• Integrated emitter ballast resistor
• fT = 6 GHz
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFG135A BFG135A1=E 2=B 3=E 4=C - - SOT223
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-emitter voltage VCES 25
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 2
Collector current IC150 mA
Base current IB20
Total power dissipation2)
TS ≤ 100°C Ptot 1 W
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
1Pb-containing package may be available upon special request
2TS is measured on the collector lead at the soldering point to the pcb
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 50 K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 15 - - V
Collector-emitter cutoff current
VCE = 25 V, VBE = 0 ICES - - 100 µA
Collector-base cutoff current
VCB = 10 V, IE = 0 ICBO - - 50 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 1 µA
DC current gain-
IC = 100 mA, VCE = 8 V, pulse measured hFE 80 120 160 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 100 mA, VCE = 8 V, f = 200 MHz fT4.5 6 - GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 1.1 1.5 pF
Collector emitter capacitance
VCE = 10 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.8 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 7 -
Noise figure
IC = 30 mA, VCE = 8 V, ZS = ZSopt,
f = 900 MHz
f = 1.8 GHz
F
-
-
1.5
2.6
-
-
dB
Power gain, maximum available1)
IC = 100 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt,
f = 900 MHz
f = 1.8 GHz
Gma
-
-
14
9
-
-
Transducer gain
IC = 100 mA, VCE = 8 V, ZS = ZL = 50Ω,
f = 900 MHz
f = 1.8 GHz
|S21e|2
-
-
10.5
4.5
-
-
dB
Third order intercept point at output
VCE = 8 V, IC = 100 mA, f = 900 MHz,
ZS = ZL = 50Ω
IP3- 33 - dBm
1Gma = |S21/S12| (k-(k2-1)1/2)
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
100
200
300
400
500
600
700
800
900
1000
mW
1200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
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Package SOT223
Package Outline
Foot Print
Marking Layout (Example)
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
123
3
4
±0.1
±0.04
0.5 MIN.
0.28
0.1 MAX.
15˚ MAX.
6.5
±0.2
A
4.6
2.3
0.7
±0.1
0.25
M
A
1.6
±0.1
7
±0.3
B0.25
M
±0.2
3.5
B
3.5
1.4 4.8 1.4
1.11.2
80.3 MAX.
6.8
7.55
12
1.75
Pin 1
Manufacturer
0...10˚
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Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
