©2008 Silicon Storage Technology, Inc.
S71319(01)-02-000 6/08
1
The SST logo, NANDrive, and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. Some content is reproduced from the Com-
pactFlash Specification (2.0) by permission of the CompactFlash Association. Other content is reproduced from the ATA/ATAPI-6 (T13/1410D revision
3b) specification by permission of the National Committee for Information Technology Standards. These specifications are subject to change without
Fact Sheet
FEATURES:
Industry Standard ATA/IDE Bus Interface
Host Interface: 16-bit access
Supports up to PIO Mode-6
Supports up to Multi-word DMA Mode-4
Supports up to Ultra DMA Mode-4
Low Power, 3.3V Power Supply
5.0V or 3.3V Host Interface Through VDDQ Pins
Low Current Operation:
Active mode: 85 mA Typical
Sleep mode: 160 µA Typical
Power Management Unit
Immediate disabling of unused circuitry without host
intervention
Zero wake-up latency
Expanded Data Protection
WP#/PD# pin configurable by firmware for
prevention of data overwrites
Data security through user-selectable protection
zones with advanced NAND management technol-
ogy
20-byte Unique ID for Enhanced Security
Factory Pre-programmed 10-byte Unique ID
User-Programmable 10-byte ID
Integrated Voltage Detector
Prevents data loss due to unexpected power-down
or brownout.
Endurance
10 Thousand program/erase cycles
10 Million write cycles with advanced NAND man-
agement technology
Data Retention
3 years
Pre-programmed Embedded Firmware
Executes industry standard ATA/IDE commands
Implements advanced wear-leveling algorithms to
substantially increase the longevity of flash media
Embedded Flash File System
Robust Built-in ECC
Multi-tasking Technology Enables Fast
Sustained Write Performance (Host-to-Flash)
Up to 4 MByte/sec
Fast Sustained Read Performance (Flash-to-Host)
Up to 23 MByte/sec
Commercial Temperature Range
0°C to 70°C for commercial operation
•LBGA package
12mm x 24mm
All non-Pb (lead-free) Devices are RoHS Compliant
PRODUCT DESCRIPTION
The SST85LD1001K, SST85LD1002L and
SST85LD1004M NANDrive™ integrated circuits (IC) are
high-performance, fully-integrated, embedded flash solid
state drives. They combine an integrated ATA Controller
and either 1GByte, 2GByte, or 4GByte of NAND Flash in a
multi-chip package. These products are ideal for solid state
mass storage applications offering new and expanded
functionality while enabling cost effective designs.
ATA-based solid state mass storage technology is widely
used in portable and desktop computers, digital
cameras, music players, handheld data collection
scanners, cellular phones, PCS phones, PDAs, handy
terminals, personal communicators, robotics, audio
recorders, monitoring devices, and set-top boxes.
SST NANDrive is a single device, solid state drive
designed for embedded ATA/IDE protocol systems and
supports standard ATA/IDE protocol with up to PIO Mode-
6, Multi-word DMA Mode-4 and Ultra DMA Mode-4
interface. The built in microcontroller and file management
firmware communicates with ATA standard interfaces;
thereby eliminating the need for additional or proprietary
software such as Flash File System (FFS) and Memory
Technology Driver (MTD) software.
The SST85LD1001K/1002L/1004M NANDrives provide
complete IDE Hard Disk Drive functionality and
compatibility in a 12mm x 24mm BGA package for easy,
space saving mounting to a system motherboard. It is a
perfect solution for portable, consumer electronic products
requiring smaller and more reliable data storage.
The NANDrive provides a WP#/PD# pin to protect critical
information stored in the flash media from unauthorized
overwrites.
The NANDrive is pre-programmed with a 10-byte unique
serial ID. For even greater system security, the user has the
option of programming an additional 10 Bytes of ID space
to create a unique, 20-byte ID.
NANDrive IC is available with advanced NAND
management technology, a NAND memory management
technology that enhances data security, significantly
improves endurance, and accurately predicts the minimum
life span of NAND flash devices. Advanced NAND
management technology combines NAND controller
hardware error correction, advanced wear leveling
algorithms, and bad block management to extend the life of
the product.
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
2
1.0 GENERAL DESCRIPTION
Each NANDrive contains an integrated ATA Controller and
one or more NAND Flash dice in a LBGA package. Refer
to Figure 2-1 for the NANDrive block diagram.
1.1 Performance-optimized NANDrive
The heart of the NANDrive is the ATA Flash Disk Controller
which translates standard ATA signals into flash media data
and control signals. The following components contribute to
the NANDrive’s operation.
1.1.1 Microcontroller Unit (MCU)
The MCU translates ATA/IDE commands into data and
control signals required for flash media operation.
1.1.2 Internal Direct Memory Access (DMA)
The NANDrive uses internal DMA allowing instant data
transfer from buffer to flash media. This implementation
eliminates microcontroller overhead associated with the
traditional, firmware-based approach, thereby increasing
the data transfer rate.
1.1.3 Power Management Unit (PMU)
The power management unit controls the power
consumption of the NANDrive. The PMU dramatically
reduces the power consumption of the NANDrive by
putting the part of the circuitry that is not in operation into
sleep mode.
1.1.4 SRAM Buffer
A key contributor to the NANDrive performance is an
SRAM buffer. The buffer optimizes the host’s data transfer
to and from the flash media.
1.1.5 Embedded Flash File System
The embedded flash file system is an integral part of the
NANDrive. It contains MCU firmware that performs the
following tasks:
1. Translates host side signals into flash media
writes and reads.
2. Provides flash media wear leveling to spread the
flash writes across all memory address space to
increase the longevity of flash media.
3. Keeps track of data file structures.
1.1.6 Error Correction Code (ECC)
High performance is achieved through optimized hardware
error detection and correction.
1.1.7 Serial Communication Interface (SCI)
The Serial Communication Interface (SCI) is designed for
manufacturing error reporting. Always provide access to
the SCI interface in the PCB design to aid in design
validation.
1.1.8 Multi-tasking Interface
The multi-tasking interface enables fast, sustained write
performance by allowing concurrent Read, Program, and
Erase operations to multiple flash media devices.
1.2 NAND Flash
The NANDrive family utilize standard NAND Flash for data
storage.
1.3 Advanced NAND Management
Technology
Advanced NAND management technology balances the
wear on erased blocks with an advanced wear-leveling
scheme which provides a minimum of 10 million product
write cycles. Advanced NAND management technology
tracks the number of program/erase cycles within a group.
When the host updates data, higher priority is given to the
less frequently written erase blocks; thereby, evenly
distributing host writes within a wear-leveling group.
Advanced NAND management technology enhances
NANDrive security with password protection and four
independent protection zones which can be set to Read-
only or Hidden.
3
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
2.0 FUNCTIONAL BLOCKS
FIGURE 2-1: NANDrive Block Diagram
1319 B1.1
HOST
ATA/IDE
BUS
ATA Flash Disk Controller
Multi-tasking Interface
SCI
NAND
Flash
NANDrive
Embedded
Flash
File System
MCU
ECC
Internal
DMA
SRAM Buffer
PMU
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
4
3.0 PIN ASSIGNMENTS
The signal/pin assignments are listed in Table 3-1. Low
active signals have a “#” suffix. Pin types are Input, Output,
or Input/Output. Signals whose source is the host are
designated as inputs while signals that the NANDrive
sources are outputs.
The NANDrive functions in ATA mode, which is compatible
with IDE hard disk drives.
FIGURE 3-1: Pin Assignments for 91-Ball LBGA
10
9
8
7
6
5
4
3
2
1
SCID
OUT
D9 D10 D13 D15 IOCS16# A2 CS3FX# DNU DNU
SCID
IN
SCICLK D8 V
SS
D12 POR# V
SS
DNU DNU DNU
DNU DNU WP#/PD#
GND
V
SS
DNU DNU DNU
DNU
DNU
DNU DNU V
DD
V
DD
DNU DNU
DNU RESET# D7 V
SS
D6 IORDY V
SS
DNU DNU DNU
DNU D5 D3 D2 D4 DMARQ A1 CS1FX# DNU DNU
VREG V
DDQ
D1 D0 IORD# INTRQ DMACK A0 V
DD
DNU
ABCDEFGHJKLMNPRT
DASP# V
DD
D11 D14 IOWR# V
SS
PDIAG# CSEL V
DDQ
DNU
TOP VIEW (balls facing down)
1319 91-lbz P1.3
DNU
DNU DNU
DNU
DNU DNU
DNU
DNU
DNU DNU
DNU
DNU
DNU DNU
DNU
5
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
TABLE 3-1: Pin Assignments (1 of 2)
Symbol
Pin No. Pin
Type
I/O
Type Name and Functions
91-LBGA
Host Side Interface
A2 K8
I I1Z A[2:0] are used to select one of eight registers in the Task File.A1 K3
A0 L2
D15 H8
I/O I1Z/O2 D[15:0] Data bus
D14 G9
D13 G8
D12 H7
D11 F9
D10 F8
D9 E8
D8 F7
D7 F4
D6 H4
D5 E3
D4 H3
D3 F3
D2 G3
D1 F2
D0 G2
DMACK K2 I I2U DMA Acknowledge - input from host
DMARQ J3 O O1 DMA Request to host
CS1FX# L3 II2Z
CS1FX# is the chip select for the task file registers
CS3FX# L8 CS3FX# is used to select the alternate status register and the Device Control register.
CSEL L9 I I1U This internally pulled-up signal is used to configure this device as a Master or a Slave.
When this pin is grounded, this device is configured as a Master. When the pin is open,
this device is configured as a Slave. The pin setting should remain the same from
Power-on to Power-down.
IORD#
H2 I I2Z
IORD#: This is an I/O Read Strobe generated by the host. When
Ultra DMA mode is not active, this signal gates I/O data from the
device.
HDMARDY# HDMARDY#: In Ultra DMA mode when DMA Read is active, this signal is asserted by
the host to indicate that the host is ready to receive Ultra DMA data-in bursts. The host
may negate HDMARDY# to pause an Ultra DMA transfer.
HSTROBE HSTROBE: When DMA Write is active, this signal is the data-out strobe generated by
the host. Both the rising and falling edges of HSTROBE cause data to be latched by the
device. The host may stop generating HSTROBE edges to pause an Ultra DMA data-
out burst.
IOWR#
H9 I I2Z
This is an I/O Write Strobe generated by the host. When Ultra
DMA mode is not active, this signal is used to clock I/O data into
the device.
STOP When Ultra DMA mode protocol is active, the assertion of this signal causes the termi-
nation of the Ultra DMA burst
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
6
IORDY
J4 O I2Z
IORDY: When Ultra DMA mode DMA Write is not active and the device is not ready to
respond to a data transfer request, this signal is negated to extend the Host transfer
cycle. However, it is never negated by this controller.
DDMARDY# DDMARDY#: When Ultra DMA mode DMA Write is active, this signal is asserted by the
host to indicate that the device is ready to receive Ultra DMA data-in bursts. The device
may negate DDMARDY# to pause an Ultra DMA transfer.
DSTROBE DSTROBE: When Ultra DMA mode DMA Read is active, this signal is the data-out
strobe generated by the device. Both the rising and falling edges of DSTROBE cause
data to be latched by the host. The device may stop generating DSTROBE edges to
pause an Ultra DMA data-out burst.
IOCS16# J8 O O2 This output signal is asserted low when the device is indicating a word data transfer
cycle.
INTRQ J2 O O1 This signal is the active high Interrupt Request to the host.
PDIAG# K9 I/O I1U/O1 The Pass Diagnostic signal in the Master/Slave handshake protocol.
DASP# D9 I/O I1U/O6 The Drive Active/Slave Present signal in the Master/Slave handshake protocol.
RESET# E4 I I2U This input pin is the active low hardware reset from the host.
WP#/PD# F6 I I3U The WP#/PD# pin can be used for either the Write Protect mode or Power-down mode,
but only one mode is active at any time. The Write Protect or Power-down modes can
be selected through the host command. The Write Protect mode is the factory default
setting.
Serial Communication Interface (SCI)
SCIDOUT D8 O O4 SCI interface data output
SCIDIN D7 I I3U SCI interface data input
SCICLK E7 I I3U SCI interface clock
Miscellaneous
VSS G4, G6, G7,
K4, K6, K7, J9 PWR Ground
VDD E9, K5,
L5, M2 PWR VDD (3.3V)
VDDQ E2, M9 PWR VDDQ (5V/3.3V) for Host interface
POR# J7 I Analog
Input1
Power-on Reset (POR). Active Low
VREG D2 O External capacitor pin
DNU A1, A2, A9,
A10, B1, B9,
B10, D3, D4,
D5, D6, E5,E6,
F5, G5, L4, L6,
L7, M3, M4,
M5, M6, M7,
M8, N2, N3,
N4, N5, N6,
N7, N8, N9,
R1, R2, R9,
R10, T1, T2,
T9, T10
Do not use.
T3-1.4 1343
1. Analog input for supply voltage detection
TABLE 3-1: Pin Assignments (Continued) (2 of 2)
Symbol
Pin No. Pin
Type
I/O
Type Name and Functions
91-LBGA
7
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
4.0 CAPACITY SPECIFICATION
Table 4-1 shows the default capacity and specific settings for heads, sectors, and cylinders. Users can change the
default settings in the drive ID table using the Identity-Drive command. If the total number of bytes is less than the
default, the remaining space could be used as spares to increase the flash drive endurance. It should also be noted that
if the total flash drive capacity exceeds the total default number of bytes, the flash drive endurance will be reduced.
TABLE 4-1: Default NANDrive Settings
Capacity Total Bytes Cylinders Heads Sectors Max LBA
1 GByte 1,024,966,656 1986 16 63 2,001,888
2 GByte 2,048,385,024 3969 16 63 4,000,752
4 GByte 4,096,253,952 7937 16 63 8,000,496
T4-1.6 1343
TABLE 4-2: Sustained Performance
Product Write Performance Read Performance
SST85LD1001K-60-4C-LBTE
SST85LD1001K-60-PC-LBTE
Up to 2 MByte/sec Up to 13 MByte/sec
SST85LD1002L-60-4C-LBTE
SST85LD1002L-60-PC-LBTE
Up to 4 MByte/sec Up to 23 MByte/sec
SST85LD1004M-60-4C-LBTE
SST85LD1004M-60-PC-LBTE
Up to 4 MByte/sec Up to 23 MByte/sec
T4-2.1343
TABLE 4-3: Supported ATA Modes
Products PIO MWDMA UltraDMA
SST85LD1001K-60-4C-LBTE
SST85LD1002L-60-4C-LBTE
SST85LD1004M-60-4C-LBTE
SST85LD1001K-60-PC-LBTE
SST85LD1002L-60-PC-LBTE
SST85LD1004M-60-PC-LBTE
Up to Mode-6 Up to Mode-4 Up to Mode-4
T4-3.1343
TABLE 4-4: Advanced NAND Management Technology Write Cycles
Products
Write Cycles
per Group
No. of Groups
per Product
Wear-leveling
Group Size Cluster Size1
1. Optimized host cluster size setting.
SST85LD1001K-60-PC-LBTE 10M 4 256 MBytes 2 KByte
SST85LD1002L-60-PC-LBTE 10M 4 512 MBytes 4 KByte
SST85LD1004M-60-PC-LBTE 10M 4 1 GByte 8 KByte
T4-4.1343
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
8
5.0 CONFIGURABLE WRITE PROTECT/
POWER-DOWN MODES
The WP#/PD# pin can be used for either Write Protect
mode or Power-down mode, but only one mode is active at
any time. Either mode can be selected through the host
command, Set-WP#/PD#-Mode.
Once the mode is set with this command, the device will
stay in the configured mode until the next time this
command is issued. Power-off or reset will not change the
configured mode.
5.1 Write Protect Mode
When the device is configured in the Write Protect mode,
the WP#/PD# pin offers extended data protection. This
feature can be either selected through a jumper or host
logic to protect the stored data from inadvertent system
writes or erases, and viruses. The Write Protect feature
protects the full address space of the data stored on the
flash media.
In the Write Protect mode, the WP#/PD# pin should be
asserted prior to issuing the destructive commands: Erase-
Sector, Format-Track, Write-DMA, Write-Multiple, Write-
Multiple-without-Erase, Write-Sector(s), Write-Sector-
without-Erase, or Write-Verify. This will force the NANDrive
to reject any destructive commands from the ATA interface.
All destructive commands will return 51H in the Status
register and 04H in the Error register signifying an invalid
command. All non-destructive commands will be executed
normally.
5.2 Power-down Mode
When the device is configured in the Power-down mode, if
the WP#/PD# pin is asserted during a command, the
NANDrive completes the current command and returns to
the standby mode immediately to save power. Afterwards,
the device will not accept any other commands. Only a
Power-on Reset (POR) or hardware reset will bring the
device to normal operation with the WP#/PD# pin de-
asserted.
6.0 POWER-ON INITIALIZATION
NANDrive is self-initialized during the first power-up. As
soon as the power is applied to the NANDrive it reports
busy for typically up to five seconds while performing bad
blocks search and low level format. This initialization is a
one time event.
During the first self-initialization, the NANDrive firmware
scans all connected flash media devices and reads their
device ID. If the device ID matches the listed flash media
devices, the NANDrive performs drive recognition based
on the algorithm provided by the flash media suppliers,
including setting up the bad block table, executing all the
necessary handshaking routines for flash media support,
and, finally, performing the low-level format.
If the drive initialization fails, and a visual inspection is
unable to determine the problem, SST provides a
comprehensive interface for manufacturing flow debug.
This interface not only allows debug of the failure and
manual reset of the initialization process, but also allows
customization of user definable options.
6.1 ATA/IDE Interface
The ATA interface can be used for NANDrive
manufacturing support. SST provides an example of a
DOS-based solution (an executable routine) for
manufacturing debug and rework.
6.2 Serial Communication Interface (SCI)
For additional manufacturing flexibility, the SCI bus can be
used for manufacturing error reporting. The SCI consists of
3 active signals: SCIDOUT, SCIDIN, and SCICLK. Always
provide access to the SCI interface in the PCB design to
aid in design validation.
7.0 LIFETIME EXPECTANCY
NANDrive is available with two endurance options—
standard NANDrive and NANDrive with advanced NAND
management technology.
7.1 Standard NANDrive
NANDrive provides minimum endurance of 10,000
program/erase cycles. The extensive ECC and wear-
leveling algorithms utilized in the NANDrive extend the
typical life of the product beyond the guaranteed minimum
endurance of the NAND flash.
7.2 NANDrive with Advanced NAND Man-
agement Technology
NANDrive with advanced NAND management technology
significantly extends the life of a product with its extensive
ECC, advanced wear-leveling, and data scan and Refresh
(DSR) algorithms. Each NANDrive device is partitioned
into four wear-leveling groups. See Table 4-4 for the group
size of each product.
Each NANDrive wear-leveling group can receive at least 10
million write cycles from the host. With four wear-leveling
groups in each product, 40 million write cycles per product
is possible when host writes are evenly distributed across
groups.
For applications where data security is essential, NANDrive
with advanced NAND management technology offers two
additional protection features—protection zones and
password protections.
9
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
Protection zones - Up to four independent protection zones
can be enabled as either Read-only or Hidden (Read/Write
protected). If the zones are not enabled, the data is
unprotected (default configuration).
Password Protection - Requires a customer-unique
password to access information within the protected zones.
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
10
8.0 PRODUCT ORDERING INFORMATION
8.1 Valid Combinations
SST85LD1001K-60-4C-LBTE SST85LD1002L-60-4C-LBTE SST85LD1004M-60-4C-LBTE
SST85LD1001K-60-PC-LBTE SST85LD1002L-60-PC-LBTE SST85LD1004M-60-PC-LBTE
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
SST 85 LD X XXXX - XXX - XC - XXX E
XX XX XXXXX - XXX -XX-XXX X
Environmental Attribute
E1 = non-Pb
Package Modifier
T = 88 ball positions (nearest letter code to
total ball count of 91)
Package Type
LB = LBGA
Operation Temperature
C = Commercial: 0°C to +70°C
Endurance
4 = 10,000 cycles minimum
P = 10,000,000 cycles minimum
Host Access Time
60 = 60ns - UDMA Mode - 4
Relative Performance Indicator
Higher letter indicates higher performance
Capacity
001 = 1 GByte
002 = 2 GByte
004 = 4 GByte
MByte or GByte Designator
1 = GByte
Voltag e
L = 3.3V
Product Series
85 = NANDrive
1 Environmental suffix “E” denotes non-Pb solder.
SST non-Pb solder devices are “RoHS Compliant”.
11
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
9.0 PACKAGING DIAGRAM
FIGURE 9-1: mini-NANDrive 91-Ball Low Profile Ball Grid Array (LBGA)
SST Package Code: LBT
Note: 1. Although many dimensions are similar to those of JEDEC
Publication 95, MO-210, this specific package is not registered.
2. All linear dimensions are in millimeters.
3. Coplanarity: 0.15 mm
4. Ball opening size is 0.40 mm (± 0.05 mm)
BOTTOM VIEW
91-lbga-LBT-12x24-1.0
1mm
DETAIL
SIDE VIEW
SEATING PLANE
A B C D E F G H J K L M N P R T
10
9
8
7
6
5
4
3
2
1
TOP VIEW
10
9
8
7
6
5
4
3
2
1
T R P N M L K J H G F E D C B A
0.40 ± 0.05
A1
CORNER
A1
CORNER
0.15
1.30
±
0.10
1.0
1.0
0.50
± 0.05
(91x)
7.0
9.0
24.0 ±0.1
12.0
±0.1
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
12
TABLE 9-1: Revision History
Number Description Date
00 Initial release of Fact Sheet for SST85LD1001K/1002L/1004M Nov 2007
01 Added advanced wear-leveling information
Added “P” endurance information to Ordering Information
Mar 2008
02 Revised Figure 3-1 on page 4
Updated Table 3-1 on page 5
Revised Data Retention value to 3 years in Features on page 1
Jun 2008
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com