
Fact Sheet
1 GByte / 2 GByte / 4 GByte NANDrive
SST85LD1001K / SST85LD1002L / SST85LD1004M
©2008 Silicon Storage Technology, Inc. S71319(01)-02-000 6/08
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5.0 CONFIGURABLE WRITE PROTECT/
POWER-DOWN MODES
The WP#/PD# pin can be used for either Write Protect
mode or Power-down mode, but only one mode is active at
any time. Either mode can be selected through the host
command, Set-WP#/PD#-Mode.
Once the mode is set with this command, the device will
stay in the configured mode until the next time this
command is issued. Power-off or reset will not change the
configured mode.
5.1 Write Protect Mode
When the device is configured in the Write Protect mode,
the WP#/PD# pin offers extended data protection. This
feature can be either selected through a jumper or host
logic to protect the stored data from inadvertent system
writes or erases, and viruses. The Write Protect feature
protects the full address space of the data stored on the
flash media.
In the Write Protect mode, the WP#/PD# pin should be
asserted prior to issuing the destructive commands: Erase-
Sector, Format-Track, Write-DMA, Write-Multiple, Write-
Multiple-without-Erase, Write-Sector(s), Write-Sector-
without-Erase, or Write-Verify. This will force the NANDrive
to reject any destructive commands from the ATA interface.
All destructive commands will return 51H in the Status
register and 04H in the Error register signifying an invalid
command. All non-destructive commands will be executed
normally.
5.2 Power-down Mode
When the device is configured in the Power-down mode, if
the WP#/PD# pin is asserted during a command, the
NANDrive completes the current command and returns to
the standby mode immediately to save power. Afterwards,
the device will not accept any other commands. Only a
Power-on Reset (POR) or hardware reset will bring the
device to normal operation with the WP#/PD# pin de-
asserted.
6.0 POWER-ON INITIALIZATION
NANDrive is self-initialized during the first power-up. As
soon as the power is applied to the NANDrive it reports
busy for typically up to five seconds while performing bad
blocks search and low level format. This initialization is a
one time event.
During the first self-initialization, the NANDrive firmware
scans all connected flash media devices and reads their
device ID. If the device ID matches the listed flash media
devices, the NANDrive performs drive recognition based
on the algorithm provided by the flash media suppliers,
including setting up the bad block table, executing all the
necessary handshaking routines for flash media support,
and, finally, performing the low-level format.
If the drive initialization fails, and a visual inspection is
unable to determine the problem, SST provides a
comprehensive interface for manufacturing flow debug.
This interface not only allows debug of the failure and
manual reset of the initialization process, but also allows
customization of user definable options.
6.1 ATA/IDE Interface
The ATA interface can be used for NANDrive
manufacturing support. SST provides an example of a
DOS-based solution (an executable routine) for
manufacturing debug and rework.
6.2 Serial Communication Interface (SCI)
For additional manufacturing flexibility, the SCI bus can be
used for manufacturing error reporting. The SCI consists of
3 active signals: SCIDOUT, SCIDIN, and SCICLK. Always
provide access to the SCI interface in the PCB design to
aid in design validation.
7.0 LIFETIME EXPECTANCY
NANDrive is available with two endurance options—
standard NANDrive and NANDrive with advanced NAND
management technology.
7.1 Standard NANDrive
NANDrive provides minimum endurance of 10,000
program/erase cycles. The extensive ECC and wear-
leveling algorithms utilized in the NANDrive extend the
typical life of the product beyond the guaranteed minimum
endurance of the NAND flash.
7.2 NANDrive with Advanced NAND Man-
agement Technology
NANDrive with advanced NAND management technology
significantly extends the life of a product with its extensive
ECC, advanced wear-leveling, and data scan and Refresh
(DSR) algorithms. Each NANDrive device is partitioned
into four wear-leveling groups. See Table 4-4 for the group
size of each product.
Each NANDrive wear-leveling group can receive at least 10
million write cycles from the host. With four wear-leveling
groups in each product, 40 million write cycles per product
is possible when host writes are evenly distributed across
groups.
For applications where data security is essential, NANDrive
with advanced NAND management technology offers two
additional protection features—protection zones and
password protections.