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nABSOLUTE MAXIMUM RATINGS (Ta=25°C)
nELECTRICAL CHARACTERISTICS 1
(TEST CIRCUIT 1: VCTR (L)=0V, VCTR (H)=2.7V, Zs=Zo=50Ω, Ta=25°C)
nELECTRICAL CHARACTERISTICS 2
(TEST CIRCUIT 2: VCTR (L)=0V, VCTR (H)=2.7V, Zs=Zo=50Ω, Ta=25°C)
PARAMETER SYMBOL RATINGS UNITS
Input power Pin 27 dBm
Control voltage VCTR 6 V
Power dissipation PD 320 mW
Operating temp. Topr -30~+85 °C
Storage temp. Tstg -40~+150 °C
PARAMETER SYMBOL
CONDITIONS MIN TYP
MAX
UNITS
Control voltage (L) VCTR (L) f=0.05~2.5GHz, Pin=10dBm -0.2 0 0.2 V
Control voltage (H) VCTR (H) f=0.05~2.5GHz, Pin=10dBm 2.5 2.7 5.5 V
Control current ICTR f=0.05~2.5GHz, Pin=10dBm - 2.0 4.0 uA
Isolation 1 ISL1 f=0.05~1GHz, Pin=0dBm 40 47 - dB
Isolation 2 ISL2 f=1GHz~2GHz, Pin=0dBm 33 37 - dB
Insertion loss 1 LOSS1 f=1GHz, Pin=0dBm - 0.6 1.0 dB
Insertion loss 2 LOSS2 f=2GHz, Pin=0dBm - 0.8 1.2 dB
Pin at 1dB
compression point P-1dB f=2GHz 19 22 - dBm
VSWR VSWR f=0.05~2.5GHz, ON STATE - 1.5 1.8
Switching time TSW f=0.05~2.5GHz - 8 - ns
PARAMETER SYMBOL
CONDITIONS MIN TYP
MAX
UNITS
Isolation 3 ISL3 f=1~100MHz, Pin=0dBm - 55 - dB
Insertion loss 3 LOSS3 f=1~100MHz, Pin=0dBm - 0.5 - dB