NEC's 1 W, L&S-BAND
MEDIUM POWER GaAs HJ-FET
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
• USABLE TO 3.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
• HIGH OUTPUT POWER:
30 dBm TYP with 5.0 V Vdc
27 dBm TYP with 3.5 V Vdc
• HIGH LINEAR GAIN:
12 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE:
30°C/W
NE651R479A
PACKAGE OUTLINE 79A
NEC's NE651R479A is a GaAs HJ-FET designed for medium
power mobile communications, Fixed Wireless Access, ISM,
WLL, PCS, IMT-2000, and MMDS transmitter and subscriber
applications. It is capable of delivering 0.5 Watts of output
power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5
V with high linear gain, high efciency, and excellent linearity.
Reliability and performance uniformity are assured by NEC's
stringent quality and control procedures.
TH
8X
Source
Gate Drain
4.2 Max
5.7 Max
4.4 Max
0.8 ± 0.15
0.6 ± 0.15
5.7 Max
0.4 ± 0.15
Source
Gate Drain
1.2 Max
1.0 Max
3.6 ± 0.2
0.8 Max
0.9 ± 0.2
0.2 ± 0.1
1.5 ± 0.2
(Bottom View)
California Eastern Laboratories
ELECTRICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER NE651R479A
PACKAGE OUTLINE 79A
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS
POUT Output Power dBm 26.0 27.0
GL Linear Gain1 dB 12.0
ηADD Power Added Efciency % 52 60
ID Drain Current mA 220
IDSS Saturated Drain Current A 0.7 VDS = 2.5 V, VGS = 0 V
VP Pinch-Off Voltage V -2.0 -0.4 VDS = 2.5 V, ID = 14 mA
BVGD Gate to Drain Break Down Voltage V 12 IGD = 14 mA
RTH Thermal Resistance, Channel to Case °C/W 30 50
f = 1.9 GHz, VDS =3.5 V
PIN = +15 dBm, RG = 1 k Ω,
IDSQ = 50 mA (RF OFF)2
Notes:
1. PIN = 0 dBm.
2. DC performance is 100% tested. Wafers are sample tested for RF performance.
Wafer rejection criteria for standard devices is 1 reject for sample lot.
Note:
1. PIN = 0 dBm.
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS
POUT Output Power dBm 29.5
GL Linear Gain1 dB 12.0
ηADD Power Added Efciency % 58
ID Drain Current mA 350
f = 1.9 GHz, VDS = 5 V
PIN = +15 dBm, RG = 1 k Ω,
IDSQ = 50 mA (RF OFF)
TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 25°C)
DESCRIPTION
FEATURES OUTLINE DIMENSIONS (Units in mm)
DISCONTINUED
NE651R479A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS PARAMETERS UNITS RATINGS
VDS Drain to Source Voltage V 8
VGS Gate to Source Voltage V -4
IDS Drain Current A 1.0
IGF Gate Forward Current mA 10
IGR Gate Reverse Current mA 10
PT Total Power Dissipation2 W 2.5
TCH Channel Temperature °C 150
TSTG Storage Temperature °C -65 to +150
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm double copper clad epoxy glass
PWB. TA = +85°C
NE651R479A-T1-A 1 kpcs/Reel
NE651R479A-A Bulk, 100 Pcs. Min.
ORDERING INFORMATION
Note:
1. Embossed Tape, 12 mm wide.
PART NUMBER QTY
RECOMMENDED OPERATING LIMITS
SYMBOL PARAMETER UNITS MIN TYP MAX
VDS Drain to Source Voltage V 3.5 6.0
GCOMP Gain Compression1 dB 3.0
TCH Channel Temperature °C +125
Note:
1. Recommended maximum gain compression is 3.0 dB at
VDS = 4.2 to 5.5 V.
TYPICAL 3.5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC = 25°C)
SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX TEST CONDITIONS
POUT Output Power dBm 27.0
GL Linear Gain1 dB 14.0
ηADD Power Added Efciency % 60
ID Drain Current mA 230
f = 900 MHz, VDS =3.5 V
PIN = +13 dBm, RG = 1 k Ω,
IDSQ = 50 mA (RF OFF)
DISCONTINUED
NE651R479A
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
Total Power Dissipation, PT (W)
Case/Circuit Temperature (TC)˚C
5
4
3
2
1
050 100 15025
R
TH
= 50°C/W
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TRANSCONDUCTANCE AND DRAIN CURRENT vs.
GATE VOLTAGE
-1.20 100
0.00
1.50
0.30
0.60
0.90
1.20
1.00
0.00
0.20
0.40
0.60
0.80
Transconductance, Gm (mS)
Gate Voltage, VG (V)
Drain Current, ID (A)
Drain Voltage, VD (V)
DRAIN CURRENT vs. DRAIN VOLTAGE
Drain Current, ID (A)
Frequency, f (GHz)
MAXIMUM AVAILABLE GAIN vs.
FREQUENCY
0.1 0.2 0.5 1.0 2.0 4.0
30.0
25.0
20.0
15.0
10.0
5.0
2.2 V , 50 mA
3.5 V , 50 mA
4.6 V , 100 mA
Maximum Available Gain, GMAG (dB)
1.5
1.25
1.00
0.75
0.5
0.25
0
0123456
V
GS
=
0V
-0.4V
-0.2V
-0.8V
-1.0V
-0.6V
DISCONTINUED
NE651R479A
VD = 5 V, ID = 100 mA
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.50 0.905 -171.35 7.390 85.67 0.031 3.68 0.664 -178.52 0.22 23.77
0.60 0.905 -176.45 6.174 81.57 0.031 1.08 0.667 178.06 0.26 22.99
0.70 0.904 179.28 5.310 77.91 0.031 -0.70 0.669 175.09 0.31 22.34
0.80 0.904 172.25 4.650 74.54 0.031 -2.57 0.669 172.45 0.36 21.76
0.90 0.904 172.25 4.144 71.29 0.031 -4.06 0.670 170.01 0.40 21.26
1.00 0.903 169.17 3.729 68.22 0.031 -5.54 0.670 167.69 0.45 20.80
1.10 0.903 166.26 3.393 65.17 0.031 -7.10 0.671 165.50 0.49 20.39
1.20 0.903 163.57 3.115 62.32 0.031 -8.31 0.672 163.46 0.54 20.02
1.30 0.902 160.94 2.878 59.48 0.031 -9.72 0.672 161.46 0.59 19.68
1.40 0.902 158.40 2.675 56.63 0.031 -11.05 0.673 159.54 0.63 19.36
1.50 0.901 155.94 2.497 53.91 0.031 -12.24 0.674 157.65 0.68 19.06
1.60 0.900 153.50 2.344 51.18 0.031 -13.54 0.675 155.81 0.73 18.79
1.70 0.900 151.13 2.207 48.51 0.031 -14.55 0.675 154.03 0.77 18.52
1.80 0.899 148.74 2.087 45.82 0.031 -16.11 0.676 152.22 0.82 18.28
1.90 0.898 146.42 1.978 43.18 0.031 -17.19 0.677 150.61 0.87 18.05
2.00 0.898 144.10 1.882 40.54 0.031 -18.30 0.679 148.90 0.92 17.62
2.10 0.897 141.78 1.794 37.96 0.031 -19.09 0.680 147.27 0.97 17.62
2.20 0.896 139.45 1.714 35.31 0.031 -20.36 0.680 145.62 1.02 16.50
2.30 0.896 137.20 1.641 32.77 0.031 -21.58 0.682 144.10 1.06 15.73
2.40 0.895 134.95 1.575 30.22 0.031 -22.87 0.684 142.52 1.11 15.06
2.50 0.895 132.69 1.514 27.72 0.031 -24.28 0.686 141.08 1.14 14.60
2.60 0.894 130.42 1.458 25.19 0.031 -25.45 0.687 139.60 1.92 14.07
2.70 0.894 128.13 1.406 22.65 0.031 -26.78 0.689 138.08 1.23 13.69
2.80 0.893 125.84 1.360 20.17 0.031 -27.62 0.690 136.71 1.28 13.25
2.90 0.892 123.53 1.315 17.71 0.031 -29.24 0.693 135.40 1.32 12.90
3.00 0.891 121.12 1.273 15.17 0.031 -30.07 0.695 133.97 1.37 12.51
3.10 0.890 118.74 1.237 12.88 0.030 -31.40 0.699 132.83 1.45 12.17
3.20 0.889 116.40 1.199 10.24 0.031 -31.97 0.699 131.33 1.47 11.83
3.30 0.889 113.93 1.167 7.72 0.031 -33.46 0.703 130.05 1.49 11.63
3.40 0.888 111.57 1.134 5.26 0.031 -34.38 0.704 128.87 1.54 11.30
3.50 0.887 109.17 1.105 279 0.031 -35.71 0.708 127.72 1.57 11.07
3.6 0.886 106.64 1.078 0.35 0.031 -37.09 0.711 126.68 1.61 10.84
3.7 0.886 1.04.11 1.052 -2.06 0.031 -38.46 0.715 125.68 1.62 10.68
3.8 0.885 101.52 1.027 -4.48 0.032 -39.84 0.719 124.84 1.60 10.51
3.9 0.885 98.85 1.005 -6.81 0.032 -40.94 0.725 124.23 1.61 10.40
4.0 0.882 95.89 0.985 -9.16 0.032 -42.41 0.734 123.96 1.63 10.25
TYPICAL SCATTERING PARAMETERS (TA = 25˚C)
Coordinates in Ohms
Frequency in GHz
VD = 5 V, ID = 100 mA
MAG = |S
21
|
|S
12
|K - 1
).
2
(
K ± ∆ = S
11
S
22
- S
21
S
12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|, K = 1 + | ∆ | - |S
11
| - |S
22
|
222
2 |S
12
S
21
|
,
Note:
1. Gain calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
100
50
25
10
0
j100
-j100
j50
-j50
j25
-j25
-j10
j10
S11
S22
0.5
4.0
4.0
0.5
S12
S21
-20
-22.5
17.5
20
8
-26
14
-32
DISCONTINUED
NE651R479A
VD = 3.5 V, ID = 50 mA
FREQUENCY S11 S21 S12 S22 K MAG1
GHz MAG ANG MAG ANG MAG ANG MAG ANG (dB)
0.50 0.89 -168.01 6.49 86.49 0.04 2.44 0.63 -173.92 0.17 21.59
0.60 0.89 -173.64 5.43 82.00 0.04 -0.91 0.63 -177.95 0.21 20.82
0.70 0.89 -178.28 4.68 78.02 0.04 -3.46 0.63 178.68 0.25 20.17
0.80 0.89 177.73 4.10 74.39 0.04 -5.97 0.63 175.74 0.29 19.59
0.90 0.89 174.20 3.65 70.90 0.04 -8.08 0.63 173.09 0.32 19.09
1.00 0.89 170.95 3.29 67.60 0.04 -10.18 0.63 170.63 0.36 18.64
1.10 0.89 167.90 2.99 64.34 0.04 -12.21 0.64 168.31 0.40 18.23
1.20 0.89 165.11 2.75 61.32 0.04 -14.08 0.64 166.20 0.43 17.86
1.30 0.89 162.38 2.54 58.30 0.04 -15.97 0.64 164.15 0.47 17.51
1.40 0.89 159.77 2.36 55.29 0.04 -17.77 0.64 162.17 0.50 17.19
1.50 0.89 157.25 2.20 52.40 0.04 -19.54 0.64 160.27 0.56 16.99
1.60 0.88 154.75 2.07 49.51 0.04 -21.34 0.64 158.40 0.60 16.72
1.70 0.88 152.33 1.95 46.67 0.04 -22.87 0.64 156.62 0.64 16.46
1.80 0.88 149.91 1.84 43.82 0.04 -24.84 0.64 154.81 0.67 16.21
1.90 0.88 147.55 1.74 41.04 0.04 -26.40 0.65 153.20 0.72 15.98
2.00 0.88 145.21 1.66 38.26 0.04 -28.02 0.65 151.49 0.77 15.86
2.10 0.88 142.87 1.58 35.55 0.04 -29.38 0.65 149.87 0.81 15.65
2.20 0.88 140.51 1.51 32.76 0.04 -31.08 0.65 148.24 0.86 15.45
2.30 0.88 138.25 1.44 30.08 0.04 -32.73 0.65 146.74 0.89 15.26
2.40 0.88 135.98 1.39 27.39 0.04 -34.35 0.66 145.17 0.93 15.08
2.50 0.88 133.71 1.33 24.76 0.04 -36.08 0.66 143.74 0.96 14.91
2.60 0.88 131.45 1.28 22.10 0.04 -37.68 0.66 142.27 1.03 13.82
2.70 0.88 129.14 1.23 19.43 0.04 -39.43 0.66 140.78 1.05 13.24
2.80 0.88 126.84 1.19 16.80 0.04 -40.80 0.66 139.41 1.10 12.64
2.90 0.88 124.54 1.15 14.23 0.04 -42.57 0.67 138.12 1.13 12.17
3.00 0.88 122.13 1.12 11.57 0.04 -44.05 0.67 136.69 1.20 11.61
3.10 0.88 119.76 1.08 9.15 0.04 -45.84 0.68 135.56 1.22 11.38
3.20 0.87 117.42 1.05 6.40 0.04 -46.80 0.68 134.07 1.27 10.94
3.30 0.87 114.95 1.02 3.77 0.04 -48.59 0.68 132.79 1.29 10.71
3.40 0.87 112.59 0.99 1.18 0.04 -49.84 0.68 131.61 1.34 10.34
3.50 0.87 110.20 0.97 -1.40 0.04 -51.37 0.69 130.47 1.36 10.14
3.60 0.87 107.68 0.94 -3.98 0.04 -53.04 0.69 129.41 1.40 9.86
3.70 0.87 105.16 0.92 -6.50 0.04 -54.52 0.70 128.40 1.41 9.67
3.80 0.87 102.57 0.90 -9.02 0.04 -56.08 0.70 127.55 1.44 9.47
3.90 0.87 99.92 0.88 -11.46 0.04 -57.48 0.71 126.90 1.44 9.34
4.00 0.87 97.00 0.86 -13.94 0.04 -59.08 0.72 126.57 1.45 9.20
TYPICAL SCATTERING PARAMETERS (TA = 25˚C)
Coordinates in Ohms
Frequency in GHz
VD = 3.5 V, ID = 50 mA
MAG = |S
21
|
|S
12
|K - 1
).
2
(
K ± ∆ = S
11
S
22
- S
21
S
12
When K ≤ 1, MAG is undefined and MSG values are used. MSG = |S
21
|
|S
12
|, K = 1 + | ∆ | - |S
11
| - |S
22
|
222
2 |S
12
S
21
|
,
Note:
1. Gain calculation:
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
100
50
25
10
0
j100
-j100
j50
-j50
j25
-j25
-j10
j10
S11
S22
0.5
4.0
4.0
0.5
+90˚
+60˚
+30˚
+0˚
-30˚
-60˚
-90˚
-120˚
-150˚
+180˚
+150˚
+120˚
S12
S21
0.5
4.0
4.0
0.5
DISCONTINUED
APPLICATION CIRCUIT (2.50 - 2.70 GHz)
NE651R79A
1 TF-100637 TEST CIRCUIT BLK 15
4 2-56 X 3/16 PHILLIPS PAN HEAD 14
2 MA101J C2, C3 CASE 1 100 pF CAP MURATA 13
1 MCR03J201 R1 0603 200 OHM RESISTOR ROHM 12
2 100A5R1CP150X C1, C5 CASE A 5.1 pF CAP ATC 11
1 100A002CP150X C4 CASE A 2.0 pF CAP ATC 10
1 100A1R5JP150X C6 CASE A 1.5 pF CAP ATC 9
2 491A105K025AS-X C12, C13 CASE A 1uF KEMET 8
2 GRM40X7R104K025BL C10, C11 0805 1uF CAP MURATA 7
2 GRM40C0G102J050BD C8, C9 0805 1000 pF CAP MURATA 6
1 NE6510179A U1 IC NEC 5
1 703401 P1 GROUND LUG CONCORD 4
1 1250-003 J3, J4 FEEDTHRU MURATA 3
1 2052-5636-02 J1, J2 FLANGE MOUNT JACK RECEPTACLE 2
2 FD-100637 PCB NE6500379A-EVAL FABRICATION DRAWING 1
T H
8 X
J1
GND
RF
IN
V
G
J3
V
D
J4
C3
C5
C9
C11
C2
C8
C10
R1 C1
C4
U1
C6
J2 RF
OUT
100637 NE65XXX79A-EV
.034
C13
C12
GND
P1
Contact CEL Engineering for artwork
and more detailed information.
C2
C1
C4
C8 C10C12C13 C11 C9 C3
VD
J4
L = .874
W = .010
L = .890
W = .010
L = .280
W = .050
L = .260
W = .050
R6
VG
RF Input
J3
J1 C5 NE651R479A J2
RF Output
DISCONTINUED
F
C
= 1.96 GHz,
V
DS
= 3.5 V
20 22 24 26 28 30 32 34
14
12
10
8
6
4
2
60
50
40
30
20
10
0
0
16
18
20
46810 12 14 16 1802
70
Gain, I
DSQ
= 250 mA
PAE, I
DSQ
= 250 mA
Gain, I
DSQ
= 100 mA
PAE, I
DSQ
= 100 mA
Gain, I
DSQ
= 50 mA
PAE, I
DSQ
= 50 mA
20 22 24 26 28 30 32 34
14
12
10
8
6
4
2
60
50
40
30
20
10
0
0
16
18
20
46810 12 14 16 1802
70
Gain, I
DSQ
= 250 mA
PAE, I
DSQ
= 250 mA
Gain, I
DSQ
= 100 mA
PAE, I
DSQ
= 100 mA
Gain, I
DSQ
= 50 mA
PAE, I
DSQ
= 50 mA
F
C
= 1.96 GHz,
VDS = 5 V
Gain, GA (dB)
Output Power, POUT (dBm) Output Power, POUT (dBm)
Gain, GA (dB)
Power Added Efciency, PAE (%)
POWER ADDED EFFICIENCY& GAIN vs.
OUTPUT POWER
Power Added Efciency, PAE (%)
POWER ADDED EFFICIENCY& GAIN vs.
OUTPUT POWER
I
DSQ
= 50 mA
I
DSQ
= 100 mA
I
DSQ
= 250 mA
F
C
= 1.96 GHz, P
OUT
= Each Tone
VDS = 3.5 V
20
10
0
-10
-20
-30
-40
2022216 2418 26 3428 3230
-60
-50
8640101412
20
10
0
-10
-20
-30
-40
2022216 2418 26 3428 3230
-60
-50
8640101412
IDSQ
= 50 mA
IDSQ = 100 mA
IDSQ = 250 mA
FC = 1.96 GHz, POUT = Each Tone
VDS = 5 V
Third Order Intermodulation Distortion, IM3 (dBc)
Total Output Power, POUT (dBm)
THIRD ORDER INTERMODULATION vs.
TOTAL OUTPUT POWER
Third Order Intermodulation Distortion, IM3 (dBc)
Total Output Power, POUT (dBm)
THIRD ORDER INTERMODULATION vs.
TOTAL OUTPUT POWER
Gain, G (dB)
Frequency, f (GHz)
GAIN AND SATURATED POWER vs.
FREQUENCY
Gain, G (dB)
Frequency, f (GHz)
GAIN AND SATURATED POWER vs.
FREQUENCY
Gain (db) 5 V at 50 mA
Gain (db) 5 V at 250 mA
P
OUT
(db) 5 V at 50 mA
P
OUT
(db) 5 V at 250 mA
18 33
32
31
30
29
28
2.001.981.961.941.921.9
8
9
10
11
12
13
14
15
16
17
2.02
Gain (db) 3.5 V at 50 mA
Gain (db) 3.5 V at 250 mA
POUT (db) 3.5 V at 50 mA
POUT (db) 3.5 V at 250 mA
18 30
29
28
27
26
25
2.001.981.961.941.921.9
8
9
10
11
12
13
14
15
16
17
2.02
Saturated Power, POUT (dBm)
Saturated Power, POUT (dBm)
TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3.5 V and VDS = 5 V
NE651R79A
DISCONTINUED
NE651R479A
Third Order Intermodulation Distortion, IM3 (dBc)
Total Output Power, POUT (dBm)
THIRD ORDER INTERMODULATION vs.
TOTAL OUTPUT POWER
-20
-30
-35
-40
-45
-50
-25
16 2624222018 28
Te st Condition: Circuit optimized
for P-2dB from 2.64 to 2.69 GHz
Instantaneous Bandwidth when
biasing at 5 V 50 mA
50 mA 100 mA
300 mA 350 mA
200 mA
150 mA
TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 5 V, f = 2.66 GHz
Output Power, POUT (dBm)
Input Power, PIN (dBm)
OUTPUT POWER vs. INPUT POWER
34
28
24
20
18
16
32
16 2624222018 28
1412108
26
30
Te st Condition: Circuit optimized
for P-2dB from 2.64 to 2.69 GHz
Instantaneous Bandwidth when
biasing at 5 V 50 mA
50 mA 100 mA
300 mA 350 mA
200 mA
150 mA
DISCONTINUED
RECOMMENDED P.C.B. LAYOUT (Units in mm)
4.0
1.7
0.5
6.1
Source
Drain Gate
0.5
5.9 1.2 1.0
0.5
through hole ∅ 0.2X33
Infrared Reow Package peak temperature: 235 ˚C or below IR35-00-2
Time: 30 seconds or less (at 210 ˚C)
Count: 2, Exposure limit: none
Partial Heating PIN temperature: 260 ˚C -
Time: 5 seconds or less (per pin row)
Exposure limit: none
RECOMMENDED SOLDERING CONDITIONS1
This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recom-
mended below, contact your CEL sales representative.
RECOMMENDED
CONDITION SYMBOL
SOLDERING CONDITIONS
SOLDERING METHOD
Note:
1. Caution: Do not use different soldering methods together (except for partial heating).
NE651R479A
DISCONTINUED
Ldpkg
L=0.001 nH
Ld
L=0.55 nH
Q1
Cdspkg
C=0.1 pF
Cdspkg
C=0.1 pF
Lspkg
L=0.001 nH
SOURCE
Lspkg
L=0.001 nH
GATE
Lg
L=1.45 nH
DRAIN
A Business Partner of NEC Electronics Corporation
05/06/2008
SCHEMATIC
Parameter Units
capacitance picofarads
inductance nanohenries
resistance ohms
UNITS
MODEL RANGE
Frequency: 0.5 to 4 GHz
Bias: VDS = 2.2 V to 4.6 V, ID = 50 mA to 350 mA
Date: 6/02/2003
Parameters Q1 Parameters Q1
VTO -0.9255 RG 1.0
VTOSC 0 RD 0.2
ALPHA 1.5 RS 0.05
BETA 0.964 RGMET 0
GAMMA 0 KF 0
GAMMADC(2) 0.002 AF 1
Q 1.5 TNOM 27
DELTA 0 XTI 3
VBI 0.6 EG 1.43
IS 1e-16 VTOTC 0
N 1 BETATCE 0
RIS 0 FFE 1
RID 0
TAU 30e-12
CDS 0.2e-12
RDB 60
CBS 100e-12
CGSO(3) 14e-12
CGDO(4) 1.1e-12
DELTA1 0.3
DELTA2 0.2
FC 0.5
VBR Innity
(1) Series IV Libra TOM Model
The parameter in Libra corresponds to the parameter in PSpice:
(2) GAMMADC GAMMA
(3) CGSO CGS
(4) CGDO CGD
FET NONLINEAR MODEL PARAMETERS (1)
NE651R479A
NONLINEAR MODEL
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Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substancesin electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
Cadmium< 100 PPM Not Detected
Hexavalent Chromium< 1000 PPM Not Detected
PBB < 1000 PPM Not Detected
PBDE < 1000 PPM Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Informationprovided by CELon its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by thirdparties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue soldby CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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