NEC's 1 W, L&S-BAND NE651R479A Medium POWER GaAs HJ-FET OUTLINE DIMENSIONS (Units in mm) * LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 0.2 UE 4.2 Max Drain IN (Bottom View) TYPICAL 5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC SYMBOLS Output Power SC O POUT CHARACTERISTICSUNITS GL ADD ID Linear Gain1 MIN TYP dBm 29.5 dB 12.0 Power Added Efficiency % 58 Drain Current mA 350 0.8 Max 3.6 0.2 0.2 0.1 0.9 0.2 NT NEC's NE651R479A is a GaAs HJ-FET designed for medium power mobile communications, Fixed Wireless Access, ISM, WLL, PCS, IMT-2000, and MMDS transmitter and subscriber applications. It is capable of delivering 0.5 Watts of output power (CW) at 3.5 V, and 1 Watt of output power (CW) at 5 V with high linear gain, high efficiency, and excellent linearity. Reliability and performance uniformity are assured by NEC's stringent quality and control procedures. Drain 1.0 Max 0.4 0.15 5.7 Max DESCRIPTION Source Gate 4.4 Max 0.8 0.15 X * HIGH LINEAR GAIN: 12 dB TYP at 1.9 GHz 8 5.7 Max 0.6 0.15 Gate H * HIGH OUTPUT POWER: 30 dBm TYP with 5.0 V Vdc 27 dBm TYP with 3.5 V Vdc T Source 1.2 Max * USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000, PCS * LOW THERMAL RESISTANCE: 30C/W D FEATURES MAX = 25C) TEST CONDITIONS f = 1.9 GHz, VDS = 5 V PIN = +15 dBm, RG = 1 k , IDSQ = 50 mA (RF OFF) Note: 1. PIN = 0 dBm. ELECTRICAL CHARACTERISTICS (TC PART NUMBER = 25C) NE651R479A PACKAGE OUTLINE SYMBOLS POUT GL Output Power ID IDSS VP BVGD RTH dBm Linear Gain1 dB Power Added Efficiency % Drain Current mA DI ADD 79A CHARACTERISTICSUNITS MIN TYP 26.0 27.0 Pinch-Off Voltage V -2.0 Gate to Drain Break Down Voltage V 12 Notes: 1. PIN = 0 dBm. 2. DC performance is 100% tested. Wafers are sample tested for RF performance. Wafer rejection criteria for standard devices is 1 reject for sample lot. 60 220 A C/W TEST CONDITIONS f = 1.9 GHz, VDS =3.5 V PIN = +15 dBm, RG = 1 k , IDSQ = 50 mA (RF OFF)2 12.0 52 Saturated Drain Current Thermal Resistance, Channel to Case MAX 0.7 VDS = 2.5 V, VGS = 0 V -0.4 VDS = 2.5 V, ID = 14 mA IGD = 14 mA 30 50 California Eastern Laboratories NE651R479A TYPICAL 3.5 V RF PERFORMANCE FOR REFERENCE (NOT SPECIFIED) (TC SYMBOLS CHARACTERISTICSUNITS MIN POUT Output Power dBm GL Linear Gain1 dB TYP 27.0 % 60 Drain Current mA 230 PARAMETERSUNITS RATINGS VDS Drain to Source Voltage V 8 VGS Gate to Source Voltage V -4 IDS Drain Current A 1.0 IGF Gate Forward Current mA 10 IGR Gate Reverse Current mA 10 SYMBOL VDS GCOMP TCH PARAMETERUNITS MIN TYP MAX Drain to Source Voltage V Gain Compression dB 3.0 C +125 Channel Temperature Total Power Dissipation W 2.5 Channel Temperature C 150 TSTG Storage Temperature C -65 to +150 ORDERING INFORMATION IN PT PART NUMBER NE651R479A-T1-A NE651R479A-A Note: 1. Embossed Tape, 12 mm wide. SC O NT Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm double copper clad epoxy glass PWB. TA = +85C DI 1 3.5 Note: 1. Recommended maximum gain compression is 3.0 dB at VDS = 4.2 to 5.5 V. TCH 2 RECOMMENDED OPERATING LIMITS UE SYMBOLS D Power Added Efficiency ID = 25C) TEST CONDITIONS f = 900 MHz, VDS =3.5 V PIN = +13 dBm, RG = 1 k , IDSQ = 50 mA (RF OFF) 14.0 ADD ABSOLUTE MAXIMUM RATINGS1 (TA = 25 C) MAX QTY 1 kpcs/Reel Bulk, 100 Pcs. Min. 6.0 NE651R479A TYPICAL PERFORMANCE CURVES (TA = 25C) 0.80 0.90 0.60 0.60 0.40 0.30 0.20 0.00 0.00 100 -1.20 RTH = 50C/W 3 2 1 25 50 100 150 IN Case/Circuit Temperature (TC)C MAXIMUM AVAILABLE GAIN vs. FREQUENCY 1.5 1.00 VGS = 0V 0.75 -0.2V 0.5 SC O -0.4V -0.6V 0.25 -0.8V 1 2 3 4 DI Drain Voltage, VD (V) 5 6 -1.0V Maximum Available Gain, GMAG (dB) NT 30.0 1.25 0 0 4 0 Gate Voltage, VG (V) DRAIN CURRENT vs. DRAIN VOLTAGE Drain Current, ID (A) 5 D 1.20 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE UE 1.00 Total Power Dissipation, PT (W) 1.50 Drain Current, ID (A) Transconductance, Gm (mS) TRANSCONDUCTANCE AND DRAIN CURRENT vs. GATE VOLTAGE 25.0 20.0 2.2 V, 50 mA 4.6 V, 100 mA 3.5 V, 50 mA 15.0 10.0 5.0 0.1 0.2 0.5 1.0 Frequency, f (GHz) 2.0 4.0 NE651R479A TYPICAL SCATTERING PARAMETERS (TA = 25C) j50 j25 -20 j100 -22.5 4.0 4.0 -26 j10 S12 0.5 S11 -j10 50 100 S21 8 0.5 14 -j25 -j100 -j50 17.5 Coordinates in Ohms Frequency in GHz VD = 5 V, ID = 100 mA VD = 5 V, ID = 100 mA S11 S21 MAG ANG MAG ANG 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.6 3.7 3.8 3.9 4.0 0.905 0.905 0.904 0.904 0.904 0.903 0.903 0.903 0.902 0.902 0.901 0.900 0.900 0.899 0.898 0.898 0.897 0.896 0.896 0.895 0.895 0.894 0.894 0.893 0.892 0.891 0.890 0.889 0.889 0.888 0.887 0.886 0.886 0.885 0.885 0.882 -171.35 -176.45 179.28 172.25 172.25 169.17 166.26 163.57 160.94 158.40 155.94 153.50 151.13 148.74 146.42 144.10 141.78 139.45 137.20 134.95 132.69 130.42 128.13 125.84 123.53 121.12 118.74 116.40 113.93 111.57 109.17 106.64 1.04.11 101.52 98.85 95.89 7.390 6.174 5.310 4.650 4.144 3.729 3.393 3.115 2.878 2.675 2.497 2.344 2.207 2.087 1.978 1.882 1.794 1.714 1.641 1.575 1.514 1.458 1.406 1.360 1.315 1.273 1.237 1.199 1.167 1.134 1.105 1.078 1.052 1.027 1.005 0.985 85.67 81.57 77.91 74.54 71.29 68.22 65.17 62.32 59.48 56.63 53.91 51.18 48.51 45.82 43.18 40.54 37.96 35.31 32.77 30.22 27.72 25.19 22.65 20.17 17.71 15.17 12.88 10.24 7.72 5.26 279 0.35 -2.06 -4.48 -6.81 -9.16 SC O DI S12 MAG ANG MAG 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.031 0.030 0.031 0.031 0.031 0.031 0.031 0.031 0.032 0.032 0.032 3.68 1.08 -0.70 -2.57 -4.06 -5.54 -7.10 -8.31 -9.72 -11.05 -12.24 -13.54 -14.55 -16.11 -17.19 -18.30 -19.09 -20.36 -21.58 -22.87 -24.28 -25.45 -26.78 -27.62 -29.24 -30.07 -31.40 -31.97 -33.46 -34.38 -35.71 -37.09 -38.46 -39.84 -40.94 -42.41 0.664 0.667 0.669 0.669 0.670 0.670 0.671 0.672 0.672 0.673 0.674 0.675 0.675 0.676 0.677 0.679 0.680 0.680 0.682 0.684 0.686 0.687 0.689 0.690 0.693 0.695 0.699 0.699 0.703 0.704 0.708 0.711 0.715 0.719 0.725 0.734 NT GHz 20 S22 IN FREQUENCY UE 0 25 D -32 S22 10 K ANG -178.52 178.06 175.09 172.45 170.01 167.69 165.50 163.46 161.46 159.54 157.65 155.81 154.03 152.22 150.61 148.90 147.27 145.62 144.10 142.52 141.08 139.60 138.08 136.71 135.40 133.97 132.83 131.33 130.05 128.87 127.72 126.68 125.68 124.84 124.23 123.96 0.22 0.26 0.31 0.36 0.40 0.45 0.49 0.54 0.59 0.63 0.68 0.73 0.77 0.82 0.87 0.92 0.97 1.02 1.06 1.11 1.14 1.92 1.23 1.28 1.32 1.37 1.45 1.47 1.49 1.54 1.57 1.61 1.62 1.60 1.61 1.63 MAG1 (dB) 23.77 22.99 22.34 21.76 21.26 20.80 20.39 20.02 19.68 19.36 19.06 18.79 18.52 18.28 18.05 17.62 17.62 16.50 15.73 15.06 14.60 14.07 13.69 13.25 12.90 12.51 12.17 11.83 11.63 11.30 11.07 10.84 10.68 10.51 10.40 10.25 Note: 1. Gain calculation: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE651R479A TYPICAL SCATTERING PARAMETERS (TA = 25C) +90 j50 +120 4.0 j25 j100 +60 0.5 4.0 S21 +150 +30 j10 25 50 100 +180 0.5 S11 0.5 D S22 10 0 4.0 0.5 +0 S12 4.0 -j10 -30 -j25 -j100 Coordinates in Ohms Frequency in GHz VD = 3.5 V, ID = 50 mA -j50 VD = 3.5 V, ID = 50 mA S11 S21 MAG ANG MAG ANG 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.89 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.88 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 0.87 -168.01 -173.64 -178.28 177.73 174.20 170.95 167.90 165.11 162.38 159.77 157.25 154.75 152.33 149.91 147.55 145.21 142.87 140.51 138.25 135.98 133.71 131.45 129.14 126.84 124.54 122.13 119.76 117.42 114.95 112.59 110.20 107.68 105.16 102.57 99.92 97.00 6.49 5.43 4.68 4.10 3.65 3.29 2.99 2.75 2.54 2.36 2.20 2.07 1.95 1.84 1.74 1.66 1.58 1.51 1.44 1.39 1.33 1.28 1.23 1.19 1.15 1.12 1.08 1.05 1.02 0.99 0.97 0.94 0.92 0.90 0.88 0.86 86.49 82.00 78.02 74.39 70.90 67.60 64.34 61.32 58.30 55.29 52.40 49.51 46.67 43.82 41.04 38.26 35.55 32.76 30.08 27.39 24.76 22.10 19.43 16.80 14.23 11.57 9.15 6.40 3.77 1.18 -1.40 -3.98 -6.50 -9.02 -11.46 -13.94 SC O DI -90 S12 MAG ANG MAG 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 0.04 2.44 -0.91 -3.46 -5.97 -8.08 -10.18 -12.21 -14.08 -15.97 -17.77 -19.54 -21.34 -22.87 -24.84 -26.40 -28.02 -29.38 -31.08 -32.73 -34.35 -36.08 -37.68 -39.43 -40.80 -42.57 -44.05 -45.84 -46.80 -48.59 -49.84 -51.37 -53.04 -54.52 -56.08 -57.48 -59.08 0.63 0.63 0.63 0.63 0.63 0.63 0.64 0.64 0.64 0.64 0.64 0.64 0.64 0.64 0.65 0.65 0.65 0.65 0.65 0.66 0.66 0.66 0.66 0.66 0.67 0.67 0.68 0.68 0.68 0.68 0.69 0.69 0.70 0.70 0.71 0.72 NT GHz -60 -120 S22 IN FREQUENCY UE -150 K ANG -173.92 -177.95 178.68 175.74 173.09 170.63 168.31 166.20 164.15 162.17 160.27 158.40 156.62 154.81 153.20 151.49 149.87 148.24 146.74 145.17 143.74 142.27 140.78 139.41 138.12 136.69 135.56 134.07 132.79 131.61 130.47 129.41 128.40 127.55 126.90 126.57 0.17 0.21 0.25 0.29 0.32 0.36 0.40 0.43 0.47 0.50 0.56 0.60 0.64 0.67 0.72 0.77 0.81 0.86 0.89 0.93 0.96 1.03 1.05 1.10 1.13 1.20 1.22 1.27 1.29 1.34 1.36 1.40 1.41 1.44 1.44 1.45 MAG1 (dB) 21.59 20.82 20.17 19.59 19.09 18.64 18.23 17.86 17.51 17.19 16.99 16.72 16.46 16.21 15.98 15.86 15.65 15.45 15.26 15.08 14.91 13.82 13.24 12.64 12.17 11.61 11.38 10.94 10.71 10.34 10.14 9.86 9.67 9.47 9.34 9.20 Note: 1. Gain calculation: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE651R79A APPLICATION CIRCUIT (2.50 - 2.70 GHz) VG VD GND J4 J3 C2 C8 C10 C3 C9 C11 P1 C12 J1 J2 C6 C1 8 X R1 T H C5 U1 RFOUT UE C13 RFIN D GND C4 NE65XXX79A-EV 100637 IN Contact CEL Engineering for artwork and more detailed information. VG NT .034 J3 C13 C11 J1 RF Input C9 C3 L = .890 W = .010 VD C2 C8 C10 C12 R6 NE651R479A SC O C5 C4 L = .280 W = .050 1 L = .874 W = .010 J4 C1 TEST CIRCUIT BLK 15 4 2-56 X 3/16 PHILLIPS PAN HEAD 14 2 1 2 1 MA101J C2, C3 CASE 1 100 pF CAP MURATA 13 MCR03J201 R1 0603 200 OHM RESISTOR ROHM 12 100A5R1CP150X C1, C5 CASE A 5.1 pF CAP ATC 11 100A002CP150X C4 CASE A 2.0 pF CAP ATC 10 9 100A1R5JP150X C6 CASE A 1.5 pF CAP ATC 2 491A105K025AS-X C12, C13 CASE A 1uF KEMET 8 2 GRM40X7R104K025BL C10, C11 0805 1uF CAP MURATA 7 2 GRM40C0G102J050BD C8, C9 0805 1000 pF CAP MURATA 6 1 NE6510179A U1 IC NEC 5 1 703401 P1 GROUND LUG CONCORD 4 1 1250-003 J3, J4 FEEDTHRU MURATA 3 1 2052-5636-02 J1, J2 FLANGE MOUNT JACK RECEPTACLE 2 2 FD-100637 PCB NE6500379A-EVAL FABRICATION DRAWING 1 DI 1 TF-100637 L = .260 W = .050 J2 RF Output NE651R79A TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 3.5 V and VDS = 5 V Gain and saturated power vs. frequency Gain and saturated power vs. frequency 27 12 11 Gain (db) 3.5 V at 50 mA Gain (db) 3.5 V at 250 mA POUT (db) 3.5 V at 50 mA POUT (db) 3.5 V at 250 mA 8 1.9 1.92 1.94 1.96 1.98 2.00 8 2 0 30 FC = 1.96 GHz, VDS = 3.5 V 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 20 10 -10 -20 -30 -50 -60 IDSQ = 50 mA IDSQ = 100 mA IDSQ = 250 mA 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Total Output Power, POUT (dBm) 28 2.02 IN 12 70 60 50 Gain, IDSQ = 50 mA PAE, IDSQ = 50 mA Gain, IDSQ = 100 mA PAE, IDSQ = 100 mA Gain, IDSQ = 250 mA PAE, IDSQ = 250 mA 10 8 6 4 2 0 40 30 20 FC = 1.96 GHz, VDS = 5 V 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 10 0 Output Power, POUT (dBm) Third Order Intermodulation Distortion, IM3 (dBc) DI Third Order Intermodulation Distortion, IM3 (dBc) FC = 1.96 GHz, POUT = Each Tone VDS = 3.5 V 0 -40 2.00 14 0 Third Order Intermodulation vs. TOTAL Output Power 10 1.98 16 Output Power, POUT (dBm) 20 1.96 18 NT 40 SC O 4 1.94 20 Power Added Efficiency, PAE (%) Gain, GA (dB) 6 1.92 29 POWER ADDED EFFICIENCY& GAIN vs. OUTPUT POWER 50 14 30 Frequency, f (GHz) 60 16 8 Gain (db) 5 V at 50 mA Gain (db) 5 V at 250 mA POUT (db) 5 V at 50 mA POUT (db) 5 V at 250 mA 1.9 70 10 12 9 2.02 20 Gain, IDSQ = 50 mA PAE, IDSQ = 50 mA Gain, IDSQ = 100 mA PAE, IDSQ = 100 mA Gain, IDSQ = 250 mA PAE, IDSQ = 250 mA 13 11 25 POWER ADDED EFFICIENCY& GAIN vs. OUTPUT POWER 12 31 10 Frequency, f (GHz) 18 14 Third Order Intermodulation vs. TOTAL Output Power 20 10 FC = 1.96 GHz, POUT = Each Tone VDS = 5 V 0 -10 -20 -30 -40 IDSQ = 50 mA IDSQ = 100 mA IDSQ = 250 mA -50 -60 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Total Output Power, POUT (dBm) Power Added Efficiency, PAE (%) 9 26 Gain, GA (dB) 10 Saturated Power, POUT (dBm) 13 D 28 14 32 15 UE 15 16 Gain, G (dB) 29 16 33 17 Saturated Power, POUT (dBm) 17 Gain, G (dB) 18 30 18 NE651R479A 34 Test Condition: Circuit optimized for P-2dB from 2.64 to 2.69 GHz Instantaneous Bandwidth when biasing at 5 V 50 mA 28 26 24 20 16 100 mA 200 mA 350 mA 50 mA 150 mA 300 mA 18 8 10 12 14 16 18 20 22 26 28 -25 -30 -35 -40 -45 -50 50 mA 150 mA 300 mA 16 DI SC O NT Input Power, PIN (dBm) 24 Test Condition: Circuit optimized for P-2dB from 2.64 to 2.69 GHz Instantaneous Bandwidth when biasing at 5 V 50 mA UE 30 -20 IN Output Power, POUT (dBm) 32 ThIRD ORDER INTERMODULATION vs. TOTAL OUTPUT POWER D OUTPUT POWER vs. INPUT POWER Third Order Intermodulation Distortion, IM3 (dBc) TYPICAL APPLICATION CIRCUIT PERFORMANCE at VDS = 5 V, f = 2.66 GHz 18 20 22 24 100 mA 200 mA 350 mA 26 Total Output Power, POUT (dBm) 28 NE651R479A RECOMMENDED P.C.B. LAYOUT (Units in mm) 4.0 Drain 5.9 D 1.7 Gate 1.2 1.0 UE 0.5 Source through hole 0.2X33 0.5 0.5 IN 6.1 RECOMMENDED SOLDERING CONDITIONS1 Soldering Method Infrared Reflow NT This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your CEL sales representative. Soldering Conditions Package peak temperature: 235 C or below Time: 30 seconds or less (at 210 C) Count: 2, Exposure limit: none Partial Heating PIN temperature: 260 C Time: 5 seconds or less (per pin row) Exposure limit: none SC O Note: DI 1. Caution: Do not use different soldering methods together (except for partial heating). Recommended CONDITION SYMBOL IR35-00-2 - NE651R479A NONLINEAR MODEL DRAIN SCHEMATIC Lspkg L=0.001 nH Parameters Q1 Parameters Q1 VTO -0.9255 RG 1.0 VTOSC 0 RD 0.2 ALPHA 1.5 RS 0.05 0.964 RGMET 0 0 KF 0 AF 1 27 Q 1.5 TNOM DELTA 0 XTI Lspkg L=0.001 nH SOURCE NT GAMMADC(2) 0.002 (1) IN FET NONLINEAR MODEL PARAMETERS GAMMA Cdspkg C=0.1 pF Lg L=1.45 nH Cdspkg C=0.1 pF BETA Ld L=0.55 nH UE GATE Q1 D Ldpkg L=0.001 nH 3 0.6 EG IS 1e-16 VTOTC 1.43 0 N 1 BETATCE 0 Parameter RIS 0 FFE 1 capacitance picofarads RID 0 inductance nanohenries TAU 30e-12 resistance ohms CDS 0.2e-12 RDB 60 CBS 100e-12 SC O VBI CGSO(3) 14e-12 CGDO 1.1e-12 (4) DELTA1 0.3 DELTA2 0.2 FC VBR UNITS Units MODEL RANGE Frequency: 0.5 to 4 GHz Bias: VDS = 2.2 V to 4.6 V, ID = 50 mA to 350 mA Date: 6/02/2003 0.5 Infinity DI (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD 05/06/2008 A Business Partner of NEC Electronics Corporation D 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 UE Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. IN CEL Pb-free products have the same base part number with a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL's understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Lead (Pb) Mercury Concentration Limit per RoHS (values are not yet fixed) NT Restricted Substance per RoHS < 1000 PPM Concentration contained in CEL devices -A Not Detected < 1000 PPM Not Detected < 100 PPM Not Detected < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected Cadmium SC O Hexavalent Chromium -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. DI Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.