SIEMENS PNP Silicon Darlington Transistors @ High collector current @ Low collector-emitter saturation voltage @ Complementary types: BSP 50 ... BSP 52 (NPN) BSP 60 ... BSP 62 1 VPS05163 Type Marking Ordering Code Pin Configuration | Package) (tape and reel) 1 2 3 4 BSP 60 BSP 60 Q62702-P1166 B Cc E C | SOT-223 BSP 61 BSP 61 Q62702-P 1167 BSP 62 BSP 62 Q62702-P 1168 Maximum Ratings Parameter Symbol Values Unit BSP 60 | BSP 61 | BSP 62 Coliector-emitter voltage Vecer 45 60 80 Vv Collector-base voltage Veso 60 80 90 Emitter-base voltage Vepo 5 Collector current Ic 1 A Peak collector current Tem 2 Base current Ip 0.1 Total power dissipation, Ts = 124 C Prot 1.5 Ww Junction temperature Ti 150 C Storage temperature range Tatg 65 ... + 150 Thermal Resistance Junction - ambient?) Rosa <72 K/AV Junction - soldering point Rinas <17 1) For detailed information see chapter Package Oullines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mnv6 cm? Cu. 1512 5.91 Semiconductor GroupSIEMENS BSP 60 BSP 62 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. max. DC characteristics Collector-emitter breakdown voltage?) Ic = 10 mA, Ree = 150 2 BSP 60 BSP 61 BSP 62 Veamcern 45 - ~ 80 - ~ Collector-base breakdown voltage Ic = 100 pA, Js = 0 BSP 60 BSP 61 BSP 62 Viarycao 60 - ~ 80 - ~ 90 - ~ Emitter-base breakdown voltage Te = 100 pA, Ja = 0 Viprjego 5 - _ Collector-emitter cutoff current Vce = VceRmex, Vac = 0 Ices Emitter-base cutoff current Vea=4V,ic=0 Teas DC current gain?) Ic = 150 MA, Vee= 10V Ic = 500 mA, Vee = 10 V Are 1000 |- ~ 2000 | - - Collector-emitter saturation voltage? Ic = 500 mA, Je = 0.5 mA Ic=1A,la=1mMA Voetsat Base-emitter saturation voltage?) Ic = 500 mA, Js = 0.5 mA Ic=1A,f=1MA Veesat AC characteristics Transition frequency Ic = 100 mA, Vce = 5 V, f= 100 MHz MHz Switching times Ie = 500 MA, Ist = Ine = 0.5 mA (see diagrams) ton tott - 400 |- - 1500 | - ns ns 1) Compare Ree for thermal stability. 2) Pulse test conditions: t < 300 ys, D = 2%. Semiconductor Group 1513SIEMENS BSP 60 ... BSP 62 Switching time test circuit Toqn=500MA > Taon = Jgatt =9-5MA Switching time waveform y Hin | | 10% F Mout 90% 90% , ior _1 cc elt | EHNOOOER teed fbn 1 t lon _ rs te | Semiconductor Group 1514SIEMENS BSP 60 ... BSP 62 Total power dissipation Pix = f (Ta*; Ts) External resistance Ree = f (Ta)** * Package mounted on epoxy Voce = Vce max ** Ree max for thermal stability BSP 60...62 EMPOOGES BSP 60...62 EHPOO666 1.6 0 Prot Ww 1.2 1.0 0.8 0.6 0.4 0.2 0.0 3 0 50 100 c 50 0 50 100 = *Cs4'50 Ish -T, Permissible pulse load Prt max / Proc =f (tp) DC current gain Are = f (/c) Vee = 10V 3 BSP 60...62 EHPO0273 108 BSP 60.,.62 EHPOO667 5 Pee 104 5 103 Tia Ni He 3 SS Ih COS tf mill 0 Tl aes corre Ll | 10? 1078 to? 1074 103 107? 5 10 |, Semiconductor Group 1515 10! 102 103 ~ Ip mA 104SIEMENS Collector-emitter saturation voltage Ic = f (Vce sat), Je~parameter 03 BSP 60...62 EHPOOSES 1 mA i > 10! 0 1 v2 Vee sot Transition frequency ft = f (ic) Vce = 10 V, f= 100 MHz 103 BSP 60...62 EHPO0G68 MHz 10? 10 10! 5 Semiconductor Group 1516 BSP 60 ... BSP 62 Base-emitter saturation voltage Ic = f (Vee sat), /a-parameter 103 BSP 60...62 RPOOGTO mA 10? 10! ee BE sat