MCC BC807-16 BC807-25 BC807-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features * * * * PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC Mechanical Data * * * * SOT-23 Case: SOT-23 Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approx.) Device Marking: BC807-16 5A1 BC807-25 5B BC807-40 5C A D C Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units Collector-Emitter Breakdown Voltage (IC=10mAdc, IB =0) Collector-Base Breakdown Voltage (IC=10uAdc, IE =0) Collector-Emitter Breakdown Voltage (IE =1.0uAdc, IC=0) Collector Cutoff Current (VCB=45Vdc,IE =0) Collector Cutoff Current (VCE=40V dc,IE =0) Emitter Cutoff Current (VEB =4.0Vdc, IC=0) 45 --- Vdc 50 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.2 uAdc --- 0.1 uAdc 100 160 250 40 250 400 600 --- --------- F B E OFF CHARACTERISTICS V (BR)CEO V (BR)CBO V (BR)EBO ICBO ICEO IEBO hFE(2) V CE(sat) V BE(sat) DC Current Gain (IC=100mAdc, V CE=1.0Vdc) BC807-16 BC807-25 BC807-40 DC Current Gain (IC=500mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=500mAdc, IB =50mAdc) Base-Emitter Saturation Voltage (IC=500mAdc,IB =50mAdc) J K ON CHARACTERISTICS hFE(1) H G --- 0.7 Vdc --- 1.2 Vdc DIMENSIONS DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout .031 .800 .035 .900 .079 2.000 inches mm SMALL SIGNAL CHARACTERISTICS fT Current-Gain-Bandwidth Product (VCE=5.0V, f=100MHz, IC=10mA) 100 --- MHz .037 .950 .037 .950 www.mccsemi.com Revision: 2 2003/04/30 MCC BC807-16 thru BC807-40 V, TEMPERATURE COEFFICIENTS (mV/C) 1000 hFE, DC CURRENT GAIN VCE = -1.0 V TA = 25C 100 10 -0.1 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) +1.0 0 -1.0 -2.0 VB for VBE -1.0 -1000 -10 -100 IC, COLLECTOR CURRENT -1000 Figure 4. Temperature Coefficients Figure 1. DC Current Gain -1.0 -1.0 TA = 25C TJ = 25C -0.8 -0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VC for VCE(sat) IC = -500 mA -0.6 -0.4 IC = -300 mA -0.2 -1.0 -10 IB, BASE CURRENT (mA) Figure 2. Saturation Region -0.4 VCE(sat) @ IC/IB = 10 IC = -10 mA -0.1 VBE(on) @ VCE = -1.0 V -0.6 -0.2 IC = -100 mA 0 -0.01 VBE(sat) @ IC/IB = 10 -100 0 -1.0 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 Figure 3. "On" Voltages www.mccsemi.com Revision: 2 2003/04/30