
221 WEST INDUSTRY COURT
DEER PARK, NY 11729-4681
PHONE (631) 586-7600
FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 318, REV. A
HERMETIC POWER MOSFET
P-CHANNEL QUAD
FEATURES:
-100 Volt, 0.60 Ohm, -3.5A MOSFET
Fast Switching
Low RDS (on)
Equivalent to IRF9120 Series
MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
RATING SYMBOL MIN. TYP. MAX. UNITS
GATE TO SOURCE VOLTAGE VGS - - 20 Volts
ON-STATE DRAIN CURRENT @ TC = 100CID- - -3.5 Amps
PULSED DRAIN CURRENT (10ms) IDM - - -10 Amps
OPERATING AND STORAGE TEMPERATURE TOP/TSTG -55 - +150 C
TOTAL DEVICE DISSIPATION @ TC = 25CPD- - 31 Watts
THERMAL RESISTANCE, JUNCTION TO CASE RthJC - - 4.0 C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = -1.0mA
BVDSS -100 - - Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = -10V, ID = 2.2A
RDS(ON) - - 0.60 W
GATE THRESHOLD VOLTAGE VDS = VGS, ID = -250mAVGS(th) -2.0 - 4.0 Volts
FORWARD TRANSCONDUCTANCE
VDS 15V, IDS = -2.2A
gfs 1.25 - - S(1/W)
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8xMax. Rating, VGS = 0V
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125C
IDSS
- -
-25
-250
mA
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
IGSS - - 100
-100
nA
TURN ON DELAY TIME VDD = -50V,
RISE TIME ID = -3.5A,
TURN OFF DELAY TIME RG = 7.5W,
FALL TIME VGS = 10V
td(ON)
tr
td(OFF)
tf
- - 60
100
50
70
nsec
DIODE FORWARD VOLTAGE TC = 25C, IS = -3.5A,
VGS = 0V
VSD - - -4.8 Volts
REVERSE RECOVERY TIME TJ = 25C,
If = -3.5A,
VDD -50 diF/ds = 100A/msec
trr - - 200
nsec
INPUT CAPACITANCE VGS = 0 V
OUTPUT CAPACITANCE VDS = -25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
Ciss
Coss
Crss
- 380
170
45
-
pF
SHD230209