1MBI400U-120 IGBT Module U-Series 1200V / 400A 1 in one-package Features Equivalent Circuit Schematic Applications * High speed switching * Voltage drive * Inverter for Motor drive * AC and DC Servo drive amplifier * Low inductance module structure * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC Conditions Continuous ICp 1ms Tc=25C Tc=80C Tc=25C Tc=80C -IC -IC pulse PC Tj Tstg V iso Rating 1200 20 600 400 1200 800 400 800 2155 +150 -40 to +125 2500 3.5 4.5 1.7 1ms Collector Power Dissipation 1 device Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 AC:1min. Screw Torque Mounting * 2 Terminals * 2 Terminals *2 *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N*m(M5 or M6), Terminal 3.5 to 4.5 N*m(M6), 1.3 to 1.7 N*m(M4) Unit V V A W C VAC N*m Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 Symbols Conditions ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=400mA VGE=15V, IC=400A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE =0V, f=1MHz VCC =600V IC=400A VGE=15V RG=1.5 VGE=0V IF=400A Tj=25C Tj=125C Tj=25C Tj=125C IF=400A Characteristics Min. Typ. - - - - 4.5 6.5 - 1.95 - 2.20 - 1.75 - 2.00 - 45 - 0.36 - 0.21 - 0.03 - 0.37 - 0.07 - 1.80 - 1.90 - 1.60 - 1.70 - - - 0.40 Max. 4.0 800 8.5 2.30 - 2.10 - - 1.20 0.60 - 1.00 0.30 2.10 - 1.90 - 0.35 - Unit Characteristics Min. Typ. - - - - - 0.0125 Max. 0.058 0.100 - mA nA V V nF s V s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. http://store.iiic.cc/ Unit C/W C/W C/W IGBT Module 1MBI400U-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Tj= 125C / chip 1000 1000 VGE=20V 15V 12V Collector current : Ic [A] Collector current : Ic [A] VGE=20V 15V 800 800 600 10V 400 12V 600 10V 400 200 200 8V 8V 0 0 0 1 2 3 4 0 5 1 Collector-Emitter voltage : VCE [V] 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) VGE=15V / chip Tj=25C / chip 10 Collector - Emitter voltage : VCE [ V ] 1000 Tj=25C 800 Collector current : Ic [A] 3 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) Tj=125C 600 400 200 8 6 4 Ic=800A Ic=400A Ic=200A 2 0 0 0 1 2 3 4 5 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) VGE=0V, f= 1MHz, Tj= 25C Vcc=600V, Ic=400A, Tj= 25C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] 2 Cies 10.0 Cres Coes VGE VCE 0 1.0 0 10 20 30 Collector-Emitter voltage : VCE [V] http://store.iiic.cc/ 0 500 1000 1500 Gate charge : Qg [ nC ] 2000 2500 IGBT Module 1MBI400U-120 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=1.5, Tj= 25C Vcc=600V, VGE=15V, Rg=1.5, Tj=125C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 10 0 200 400 600 0 800 Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=15V, Tj= 25C 600 800 Vcc=600V, VGE=15V, Rg=1.5 80 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 400 Switching loss vs. Collector current (typ.) 10000 ton toff 1000 tr 100 tf 10 Eoff(125C) 70 60 50 Eoff(25C) 40 Err(125C) 30 Err(25C) Eon(25C) Eon(125C) 20 10 0 0.1 1.0 10.0 100.0 0 Gate resistance : Rg [ ] 200 400 600 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 1.5 ,Tj <= 125C 300 1000 100 Eoff Collector current : Ic [ A ] 800 Eon 200 600 400 200 Err 0 0.10 1.00 10.00 800 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=400A, VGE=15V, Tj= 125C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 200 Collector current : Ic [ A ] Collector current : Ic [ A ] 0 100.00 0 400 800 1200 Collector - Emitter voltage : VCE [ V ] Gate resistance : Rg [ ] http://store.iiic.cc/ IGBT Module 1MBI400U-120 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=600V, VGE=15V, Rg=1.5 1000 Tj=25C 800 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 1000 Tj=125C 600 400 200 100 10 0 0 1 2 3 4 Forward on voltage : VF [ V ] 1.000 FWD 0.100 IGBT 0.010 0.001 0.001 0.010 0.100 0 200 400 600 Forward current : IF [ A ] Transient thermal resistance (max.) Thermal resistanse : Rth(j-c) [ C/W ] Irr (125C) Irr (25C) trr (125C) trr (25C) 1.000 Pulse width : Pw [ sec ] Outline Drawings, mm M127 http://store.iiic.cc/ 800