Mar.2002
CM150E3U-12F
APPLICATION
Brake
MITSUBISHI IGBT MODULES
CM150E3U-12F
HIGH POWER SWITCHING USE
¡IC ...................................................................150A
¡VCES ............................................................ 600V
¡Insulated Type
¡1-element in a pack
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
RTC
CIRCUIT DIAGRAM
C2E1
E2 C1
G2E2
CM
G1 E1 E2 G2
C2 E1 C1
E2
27
24
24
94
16 16
2.5
21.2 7.5
2.5
25
7
17 23
24
114
13
48
23 4
12 13.5 1MAX
80
±0.25
2–φ6.5 MOUNTING HOLES
3–M5 NUTS
12mm deep
TAB #110. t=0.5
30
+1
–0.5
LABEL
Tc measured point
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-12F
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C)
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
*1 : Tc measured point is indicated in OUTLINE DRAWING.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*3 : If you use this value, Rth(f-a) should be measured just under the chips.
600
±20
150
300
150
300
520
600
150
300
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
V
V
A
A
A
A
W
V
A
A
°C
°C
V
N • m
N • m
g
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
TC = 25°C
Pulse (Note 2)
TC = 25°C
Pulse (Note 2)
TC = 25°C
Clamp diode part
TC = 25°C Clamp diode part
Pulse Clamp diode part (Note 2)
Charged part to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Symbol Parameter
Collector current
Emitter current
Conditions UnitRatings
VCES
VGES
IC
ICM
IE (
Note 1
)
IEM (
Note 1
)
PC (
Note 3
)
VRRM
IF
IFM
Tj
Tstg
Viso
—
—
VCE = VCES, VGE = 0V
VGE = VCES, VCE = 0V
Tj = 25°C
Tj = 125°C
VCC = 300V, IC = 150A, VGE = 15V
VCC = 300V, IC = 150A
VGE1 = VGE2 = 15V
RG = 4.2Ω, Inductive load switching operation
IE = 150A
IE = 150A, VGE = 0V
IGBT part
FWDi part
Tc measured point is just under the chips
IF = 150A, Clamp diode part
IF = 150A
VCC = 300V, VGE1 = VGE2 = 15V
RG = 4.2Ω, Inductive load switching operation,
Clamp diode part
Clamp diode part
Case to fin, Thermal compound applied*2 (1/2 module)
IC = 15mA, VCE = 10V
IC = 150A, VGE = 15V
VCE = 10V
VGE = 0V
1
20
2.2
—
41
2.7
1.5
—
120
100
350
250
150
—
2.6
42
0.24
0.47
0.19*3
2.6
150
—
0.47
—
mA
µA
nF
nF
nF
nC
ns
ns
ns
ns
µC
V
Ω
°C/W
°C/W
°C/W
V
ns
µC
°C/W
°C/W
—
—
1.6
1.6
—
—
—
930
—
—
—
—
—
2.8
—
—
—
—
—
—
—
2.8
—
0.07
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.2
—
—
—
—
—
—
—
—
6V
V
57
ns
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
External gate resistance
Thermal resistance
Forward voltage drop
Reverse recovery time
Reverse recovery charge
Thermal resistance*1
Contact thermal resistance
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance*1
ICES
IGES
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Note 1
)
Qrr (
Note 1
)
VEC(
Note 1
)
RG
Rth(j-c)Q
Rth(j-c)R
Rth(j-c’)Q
VFM
trr
Qrr
Rth(j-c)R
Rth(c-f)
Symbol Parameter Test conditions
VGE(th)
VCE(sat)
Unit
Typ.
Limits
Min. Max.
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-12F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
300
200
100
250
150
50
0.5 1.5 2.5 3.51234
00
7.5
15
11
10
8.5
8
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
0 0.5 1 1.5 2 2.5 3 3.5 4
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–1
2
10
0
357 2
10
1
357 2
10
2
357
2.5
3
2
1.5
1
0.5
03000 100 200
5
4
3
2
1
016 18 206 8 10 12 14
10
0
10
1
23 57
10
2
23 57
10
3
23 57
10
1
10
0
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
IC = 300A
IC = 150A
IC = 60A
Tj = 25°C
VCC = 300V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
Conditions:
td(off)
td(on)
tf
tr
Tj=25°C
VGE=20V 9.5
9
Tj = 25°C
Tj = 125°C
VGE = 15V
Tj = 25°C
VGE = 0V
Cres
Coes
Cies
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
COLLECTOR CURRENT I
C
(A)
GATE-EMITTER VOLTAGE V
GE
(V)
FREE-WHEEL DIODE AND CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT IE (A)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–VCE
CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
SWITCHING TIMES (ns)
COLLECTOR CURRENT I
C
(A)
Mar.2002
MITSUBISHI IGBT MODULES
CM150E3U-12F
HIGH POWER SWITCHING USE
10
1
10
2
23 57
10
3
23 57
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
1
10
–3
10
–5
10
–4
10
0
7
5
3
2
10
–2
7
5
3
2
10
–1
7
5
3
2
7
5
3
2
10
–3
23 57 23 57 23 57 23 57
10
1
10
–2
10
–1
10
0
10
–3
10
–3
7
5
3
2
10
–2
7
5
3
2
10
–1
3
2
23 57 23 57
0
2
4
6
8
10
12
14
16
18
20
0 200 400 600 1400800 1000 1200
VCC = 200V
VCC = 300V
IC = 150A
Single Pulse
TC = 25°C
trr
Irr
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 4.2Ω
T
j
= 25°C
REVERSE RECOVERY CHARACTERISTICS
OF CLAMP DIODE
(TYPICAL)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part & CLAMP DIODE part)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th (j–c)
(°C/W)
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(V)
GATE CHARGE Q
G
(nC)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT l
rr
(A)
IGBT part: Per unit base = R
th(j–c)
= 0.24°C/W
FWDi
part: Per unit base = R
th(j–c)
= 0.47°C/W
CLAMP Di part: Per unit base = R
th(j–c)
= 0.47°C/W
