TIP36C - Power Innovations - Product.Network

TIP36, TIP36A, TIP36B, TIP36C

PNP SILICON POWER TRANSISTORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

●Designed for Complementary Use with the

TIP35 Series

●125 W at 25°C Case Temperature

●25 A Continuous Collector Current

●40 A Peak Collector Current

●Customer-Specified Selections Available

SOT-93 PACKAGE

(TOP VIEW)

Pin 2 is in electrical contact with the mounting base. MDTRAA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 1 W/°C.

3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.

4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω,

VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.

RATINGSYMBOLVALUEUNIT

Collector-base voltage (IE = 0)

TIP36

TIP36A

TIP36B

TIP36C

VCBO

-80

-100

-120

-140

Collector-emitter voltage (IB = 0)

TIP36

TIP36A

TIP36B

TIP36C

VCEO

-40

-60

-80

-100

Emitter-base voltageVEBO-5V

Continuous collector current IC-25A

Peak collector current (see Note 1)ICM-40A

Continuous base current IB-5A

Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot125W

Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot3.5W

Unclamped inductive load energy (see Note 4)½LIC290mJ

Operating junction temperature rangeTj-65 to +150°C

Storage temperature rangeTstg-65 to +150°C

Lead temperature 3.2 mm from case for 10 secondsTL250°C

TIP36, TIP36A, TIP36B, TIP36C

PNP SILICON POWER TRANSISTORS

JULY 1968 - REVISED MARCH 1997

PRODUCT INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature

PARAMETERTEST CONDITIONSMINTYPMAXUNIT

V(BR)CEOCollector-emitter

breakdown voltageIC = -30 mA

(see Note 5)IB = 0

TIP36

TIP36A

TIP36B

TIP36C

-40

-60

-80

-100

ICESCollector-emitter

cut-off current

VCE= -80 V

VCE=-100 V

VCE=-120 V

VCE=-140 V

VBE =0

TIP36

TIP36A

TIP36B

TIP36C

-0.7

ICEOCollector cut-off

currentVCE= -30 V

VCE= -60 VIB=0

IB=0TIP36/36A

TIP36B/36C-1

-1mA

IEBOEmitter cut-off

currentVEB = -5 VIC=0-1mA

hFEForward current

transfer ratioVCE = -4 V

VCE = -4 VIC=-1.5A

IC= -15A(see Notes 5 and 6)25

10 50

VCE(sat)Collector-emitter

saturation voltageIB = -1.5 A

IB = -5 AIC= -15A

IC= -25A(see Notes 5 and 6)-1.8

-4V

VBEBase-emitter

voltageVCE = -4 V

VCE = -4 VIC= -15 A

IC= -25 A(see Notes 5 and 6)-2

-4V

hfeSmall signal forward

current transfer ratioVCE = -10 VIC= -1Af = 1 kHz25

|hfe|Small signal forward

current transfer ratioVCE = -10 VIC= -1Af = 1 MHz3

thermal characteristics

PARAMETERMINTYPMAXUNIT

RθJCJunction to case thermal resistance 1 °C/W

RθJAJunction to free air thermal resistance35.7°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETERTEST CONDITIONS †MINTYPMAXUNIT

ton Turn-on timeIC = -15 A

VBE(off) = 4.15 VIB(on) = -1.5 A

RL = 2 ΩIB(off) = 1.5 A

tp = 20 µs, dc ≤ 2%1.1µs

toffTurn-off time0.8µs

JULY 1968 - REVISED MARCH 1997

TIP36, TIP36A, TIP36B, TIP36C

PNP SILICON POWER TRANSISTORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

Figure 1. Figure 2.

Figure 3.

TYPICAL DC CURRENT GAIN

COLLECTOR CURRENT

IC - Collector Current - A

-0·1 -1 -10 -100

hFE - DC Current Gain

100

1000 TCS636AA

VCE = -4 V

TC = 25°C

tp = 300 µs, duty cycle < 2%

COLLECTOR-EMITTER SATURATION VOLTAGE

BASE CURRENT

IB - Base Current - A

-0·001 -0·01 -0·1 -1·0 -10 -100

VCE(sat) - Collector-Emitter Saturation Voltage - V

-0·01

-0·1

-1·0

-10 TCS636AB

IC = -25 A

IC = -20 A

IC = -15 A

IC = -10 A

IC = -300 mA

IC = -1 A

IC = -3 A

BASE-EMITTER VOLTAGE

COLLECTOR CURRENT

IC - Collector Current - A

-0·1 -1·0 -10 -100

VBE - Base-Emitter Voltage - V

-0·6

-0·8

-1·0

-1·2

-1·4

-1·6

-1·8 TCS636AC

VCE = -4 V

TC = 25°C

TIP36, TIP36A, TIP36B, TIP36C

PNP SILICON POWER TRANSISTORS

JULY 1968 - REVISED MARCH 1997

PRODUCT INFORMATION

MAXIMUM SAFE OPERATING REGIONS

Figure 4.

THERMAL INFORMATION

Figure 5.

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

VCE - Collector-Emitter Voltage - V

-1·0 -10 -100 -1000

IC - Collector Current - A

-0·01

-0·1

-1·0

-10

-100 SAS636AA

TIP36

TIP36A

TIP36B

TIP36C

tp = 300 µs, d = 0.1 = 10%

tp = 1 ms, d = 0.1 = 10%

tp = 10 ms, d = 0.1 = 10%

DC Operation

MAXIMUM POWER DISSIPATION

CASE TEMPERATURE

TC - Case Temperature - °C

025 50 75 100 125 150

Ptot - Maximum Power Dissipation - W

100

120

140 TIS635AA

JULY 1968 - REVISED MARCH 1997

TIP36, TIP36A, TIP36B, TIP36C

PNP SILICON POWER TRANSISTORS

PRODUCT INFORMATION

SOT-93

3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic

compound. The compound will withstand soldering temperature with no deformation, and circuit performance

characteristics will remain stable when operated in high humidity conditions. Leads require no additional

cleaning or processing when used in soldered assembly.

MECHANICAL DATA

SOT-93

ALL LINEAR DIMENSIONS IN MILLIMETERS

4,90

4,70

1,37

1,17

0,78

0,50

2,50 TYP.

15,2

14,7

12,2 MAX. 16,2 MAX.

18,0 TYP.

31,0 TYP.

1,30

1,10

11,1

10,8

4,1

4,0 3,95

4,15

1 2 3

NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW

TIP36, TIP36A, TIP36B, TIP36C

PNP SILICON POWER TRANSISTORS

JULY 1968 - REVISED MARCH 1997

PRODUCT INFORMATION

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any

semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the

information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI

deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement

of patents or services described herein. Nor is any license, either express or implied, granted under any patent

right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,

machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE

SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.