PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet The SST12LF01 is a 2.4 GHz Front-End Module (FEM) that combines a high-performance Low-Noise Amplifier (LNA) and a Power Amplifier (PA). Designed in compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT technology, the SST12LF01 operates within the frequency range of 2.4- 2.55 GHz at a very low DC-current consumption. The Transmitter chain has excellent linearity, typically <3% added EVM up to 19 dBm output power, which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LF01 is offered in a 24-contact WQFN package. Features * Gain: * Built-in, Ultra-low IREF power-up/down control - Typically 12 dB gain across 2.4-2.5 GHz for Receiver (RX) chain. - Typically 29 dB gain across 2.4-2.5 GHz over temperature 0C to +80C for Transmitter (TX) chain. * Low-Noise Figure - Typical 1.45 dB across 2.4-2.55 GHz - IREF <4 mA * High-speed power-up/down - Turn on/off time (10%- 90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * 50 Input/Output matched along RX chain. * High temperature stability * Rx IIP3 * Simple input/output matching - >1 dbm across 2.4-2.55 GHz * Single positive power supply * High linear output power: - >26.5 dBm P1dB - Meets 802.11g OFDM ACPR requirement up to 23 dBm - ~3% added EVM up to 19 dBm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 24 dBm * High power-added efficiency/Low operating current for both 802.11g/b applications - ~22%/210 mA @ POUT = 22 dBm for 802.11g - ~26%/240 mA @ POUT = 23.5 dBm for 802.11b * Low idle current - ~70 mA ICQ * Low shut-down current (Typical 2.5 A) (c)2011 Silicon Storage Technology, Inc. - ~1 dB gain/power variation between 0C to +85C * Packages available - 24-contact WQFN - 4mm x 4mm * All devices are RoHS compliant Applications * WLAN * Bluetooth * Wireless Network www.microchip.com DS75040A 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Product Description The SST12LF01 is a 2.4 GHz Front-End Module (FEM) that combines a high-performance Low-Noise Amplifier (LNA) and a Power Amplifier (PA). Designed in compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT technology, the SST12LF01 operates within the frequency range of 2.4-2.55 GHz at a very low DC-current consumption. There are two components to the FEM: the Receiver (RX) chain and the Transmitter (TX) chain. The RX chain consist of a cost effective Low-Noise Amplifier (LNA) cell which requires no external RFmatching components. This device is based on the 0.5m GaAs PHEMT technology, and complies with 802.11 b/g/n applications. The LNA provides high-performance, low-noise, and moderate gain operation within the 2.4-2.55 GHz frequency band. Across this frequency band, the LNA typically provides 12 dB gain and 1.45 dB noise figure. This LNA cell is designed with a self DC-biasing scheme, which maintains low DC current consumption, nominally at 11 mA, during operation. Optimum performance is achieved with only a single power supply and no external bias resistors or networks are required. The input and output ports are singledended 50 Ohm matched. RF ports are also DC isolated requiring no dc blocking capacitors or matching components to reduce system board Bill of Materials (BOM) cost. The TX chain includes a high-efficiency PA based on InGaP/GaAs HBT technology. The PA typically provides 30 dB gain with 22% power-added efficiency at POUT = 22 dBm for 802.11g and 27% poweradded efficiency at POUT = 24 dBm for 802.11b. The Transmitter chain has excellent linearity, typically <4% added EVM up to 20 dBm output power, which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LF01 is offered in 24-contact WQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. (c)2011 Silicon Storage Technology, Inc. DS75040A 2 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Functional Blocks 24 23 22 21 20 19 1 18 DC Block 2 DC Block 17 LNA 3 16 4 15 PA 5 14 6 13 7 8 9 10 11 12 1330 B1.1 Figure 1: Functional Block Diagram (c)2011 Silicon Storage Technology, Inc. DS75040A 3 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet LNAIN 1 NC 2 NC 3 PAOUT 4 PAOUT VCC_TX2 NC NC 23 NC NC 24 VDD_RX NC Pin Assignments 22 21 20 19 18 LNAOUT 17 NC 16 NC 15 NC 5 14 PAIN 6 13 NC Top View (contacts facing down) RF and DC GND 0 7 8 9 10 11 12 NC NC VCC_TX1 VREF VCCb NC 1330 P1.1 Figure 2: Pin Assignments for 24-contact WQFN (c)2011 Silicon Storage Technology, Inc. DS75040A 4 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Pin Descriptions Table 1: Pin Description Symbol Pin No. Type1 Pin Name LNAIN 1 NC 2 No Connection I NC 3 No Connection PAOUT 4 Function LNA RF Input Unconnected pin Unconnected pin O O PA RF output PAOUT 5 VCC_TX2 6 Power Supply NC 7 No Connection Unconnected pin NC 8 No Connection Unconnected pin VCC_TX1 9 Power Supply VREF 10 PWR PA RF output PA power supply, 2nd stage PWR PA power supply,1st stage PWR PA-enable and current control PWR PA power supply, bias circuit VCCb 11 Power Supply NC 12 No Connection NC 13 No Connection PAIN 14 NC 15 No Connection Unconnected pin NC 16 No Connection Unconnected pin NC 17 No Connection LNAOUT 18 NC 19 No Connection Unconnected pin NC 20 No Connection Unconnected pin NC 21 No Connection VDD_RX 22 Power Supply NC 23 No Connection Unconnected pin NC 24 No Connection Unconnected pin Unconnected pin Unconnected pin I PA RF input Unconnected pin O LNA RF Output Unconnected pin PWR LNA power supply T1.0 75040 1. I=Input, O=Output (c)2011 Silicon Storage Technology, Inc. DS75040A 5 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Electrical Specifications The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and current specifications. Refer to Figures 3 through 14 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Input power to pins 1 (LNA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 dBm Input power to pins 14 (PA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -5 dBm Average output power pins 4 and 5 (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 dBm Average output power pin 18 (POUT)1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 dBm Supply Voltage at pins 6, 9, and 11 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V Supply Voltage at pin 22 (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V Reference voltage to pin 10 (VREF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V DC supply current to pin 10 (IDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 mA DC supply current to pin 6, 9, and 11 (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C for 10 seconds 1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the maximum rating of average output power could cause permanent damage to the device. Table 2: Operating Range Range Ambient Temp VCC / VDD -0 to 80C 2.9-4.2V Commercial T2.1 75040 Table 3: DC Electrical Characteristics Symbol Parameter VCC Supply Voltage at pins 6, 9, 11, and 22 ICC Supply Current at pin 22 Min. Typ Max. Unit 3.3 4.2 V 10 mA for 802.11g, 22 dBm at pins 6, 9, and 11 210 mA for 802.11b, 23.5 dBm at pins 6, 9, and 11 260 mA ICQ Idle current for 802.11g to meet EVM<4% @ 20 dBm 75 mA IOFF Shut down current 2.5 A VREF1 Reference Voltage at pin10 with RREG = 0 resistor 2.7 V Reference Voltage at pin 10 with RREG = 120 resistor 2.7 2.9 3.1 Reference Voltage at pin 10 with RREG = 220 resistor 2.9 3.1 3.3 V V T3.1 75040 1. VREF and VREG are defined in Figure 15. Three combinations of resistor values and applied voltages of VREG are suggested in Table 3. (c)2011 Silicon Storage Technology, Inc. DS75040A 6 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Table 4: AC Electrical Characteristics for RX Chain Symbol Parameter Min. FL-U Frequency range 2400 G Small signal gain 10 NF Noise Figure IIP3 2.4-2.55 GHz 1 Typ Max. Unit 2550 MHz 12 dB 1.45 dB 3 dBm T4.1 75040 Table 5: AC Electrical Characteristics for TX Chain Symbol Parameter Min. FL-U Frequency range 2400 POUT Output power Max. Unit 2485 MHz @ PIN = -6 dBm 11b signals 23 dBm @ PIN = -9 dBm 11g signals 20 dBm G Small signal gain GVAR1 Gain variation over band (2400~2485 MHz) GVAR2 Gain ripple over channel (20 MHz) ACPR Meet 11b spectrum mask 23 28 Meet 11g OFDM 54 Mbps spectrum mask 22 Added EVM @ 20 dBm output with 11g OFDM 54 Mbps signal 2f, 3f, 4f, 5f Typ Harmonics at 22 dBm, without external filters (c)2011 Silicon Storage Technology, Inc. 29 33 dB 0.5 dB 0.2 4 -40 DS75040A 7 dB dBm dBm % dBc T5.1 75040 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Typical Performance Characteristics Test Conditions: VDD = 3.0V, TA = 25C, unless otherwise specified S12 versus Frequency S11 versus Frequency 20 20 10 10 0 S12 (dB) S11 (dB) 0 -10 -10 -20 -30 -20 -40 -30 -50 -40 0 1 2 3 4 5 6 7 8 9 -60 0 10 1 2 3 4 5 6 7 Frequency (GHz) Frequency (GHz) S21 versus Frequency S22 versus Frequency 8 9 10 8 9 10 0 20 -5 10 S22 (dB) S21 (dB) -10 0 -10 -20 -15 -20 -25 -30 -30 -40 -35 -50 -40 0 1 2 3 4 5 6 7 8 Frequency (GHz) 9 10 0 1 2 3 4 5 6 7 Frequency (GHz) 1330-sparm1.3 Figure 3: S-Parameters, RX Chain (c)2011 Silicon Storage Technology, Inc. DS75040A 8 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Frequency (GHz) 3.0 2.5 Noise Figure (dB) 2.0 Temp = -10 degree 1.5 Temp = 25 degree Temp = 80 degree 1.0 0.5 0 1.5 2.0 2.5 3.0 Frequency (GHz) 1330 F8.1 Figure 4: Noise Figure versus Frequency, RX Chain (c)2011 Silicon Storage Technology, Inc. DS75040A 9 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet 20 15 Gain (dB) 10 5 0 -5 Temp = - 10 degree Room temp -10 Temp = 80 degree -15 1 2 3 Frequency (GHz) 4 1330 F12.1 Figure 5: Frequency Response of Gain (S21) over three Temperatures (c)2011 Silicon Storage Technology, Inc. DS75040A 10 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet 10 9 8 IIP3 (dBm) 7 6 VDD=3.3V 5 VDD=3.0V VDD=3.6V 4 3 2 1 0 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 Frequency (GHz) 1330 F9.1 Figure 6: Input IP3 versus Frequency, RX Chain (c)2011 Silicon Storage Technology, Inc. DS75040A 11 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet 0 -1 -2 IP1dB (dBm) -3 -4 VDD = 3.3 -5 VDD = 3.0 -6 VDD = 3.6 -7 -8 -9 -10 2 2.2 2.4 2.6 2.8 3 Frequency (GHz) 1330 F10.1 Figure 7: Input P1dB versus Frequency, RX Chain (c)2011 Silicon Storage Technology, Inc. DS75040A 12 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet 2.00 0.00 0.00 -10.00 -20.00 -2.00 -30.00 S21 (dB) S11 (dB) Test Conditions: VCC = 3.3V, TA = 25C, unless otherwise specified -4.00 -6.00 -8.00 -40.00 -50.00 -60.00 -70.00 -10.00 -80.00 -12.00 0.0 2.0 4.0 6.0 8.0 10.0 -90.00 12.0 -100.00 Frequency (GHz) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) 40.00 0.00 30.00 -1.00 -2.00 10.00 S22 (dB) S21 (dB) 20.00 0.00 -10.00 -20.00 -3.00 -4.00 -5.00 -30.00 -6.00 -40.00 -7.00 -50.00 -60.00 0.0 -8.00 2.0 4.0 6.0 8.0 10.0 Frequency (GHz) 12.0 -9.00 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Frequency (GHz) 1330 sparm2-1.1 Figure 8: S-Parameters, TX Chain (c)2011 Silicon Storage Technology, Inc. DS75040A 13 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Typical Performance Characteristics Test Conditions: f = 2.447 GHz, VCC = 3.3V, VREF = 2.85V at room temperature ICQ = 70 mA Supply Current versus Output Power 360 Supply Current (mA) 340 320 Freq = 2.412 GHz 300 Freq = 2.447 GHz 280 Freq = 2.484 GHz 260 240 220 200 180 160 140 120 100 80 60 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1330 F1.1 Figure 9: Supply Current versus Output Power PAE versus Output Power 30 28 26 24 22 PAE (%) 20 18 16 14 12 10 8 Freq = 2.412 GHz 6 Freq = 2.447 GHz 4 Freq = 2.484 GHz 2 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1330 F2.1 Figure 10:Power Added Efficiency (PAE) versus Output Power (c)2011 Silicon Storage Technology, Inc. DS75040A 14 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet EVM versus Output Power 10 9 Freq=2.412 GHz Freq=2.447 GHz 8 Freq=2.484 GHz EVM (%) 7 6 5 4 3 2 1 0 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1330 F3.3 Figure 11:EVM versus Output Power, measured with Equalizer Channel Estimation set to "sequence plus data" Power Gain versus Output Power 40 Freq=2.412 GHz 38 Freq=2.447 GHz Power Gain (dB) 36 Freq=2.484 GHz 34 32 30 28 26 24 22 20 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Output Power (dBm) 1330 F11.0 Figure 12:Power Gain versus Output Power (c)2011 Silicon Storage Technology, Inc. DS75040A 15 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Test Conditions: VCC = 3.3V, TA = 25C, 54 Mbps 802.11g OFDM signal 10 Freq = 2.412 GHz 0 Freq = 2.442 GHz Freq = 2.484 GHz Amplitude (dB) -10 -20 -30 -40 -50 -60 -70 2.35 2.40 2.45 2.50 2.55 Frequency (GHz) 1330 F4.0 Figure 13:802.11g Spectrum Mask at 23 dBm Test Conditions: VCC = 3.3V, TA = 25C, 1 Mbps 802.11b signal 10 Freq = 2.412 GHz 0 Freq = 2.442 GHz Freq = 2.484 GHz -10 Amplitude (dB) -20 -30 -40 -50 -60 -70 -80 2.35 2.40 2.45 2.50 2.55 Frequency (GHz) 1330 F5.0 Figure 14:802.11b Spectrum Mask at 23 dBm (c)2011 Silicon Storage Technology, Inc. DS75040A 16 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet 0.1 F LNA VDD 24 23 22 21 20 19 50 50 LNA RFIN DC Block 47 pF LNA RFOUT 18 1 DC Block 2 17 3 16 4 15 5 14 / 146 mil 50 PA RFOUT 50 1.6 pF 6 12 nH / 113 mil PA RFIN 0.82 pF 13 7 8 9 10 11 47 pF 12 0.1F 0.1F 0.1F 50 1 F PA VCC 100 pF 0 VREG VREF IREG 1330 Schematic1.2 Figure 15:Typical Schematic (c)2011 Silicon Storage Technology, Inc. DS75040A 17 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Product Ordering Information SST 12 LF XX XX 01 XX - - QDF XXX Environmental Attribute F1= non-Pb contact (lead) finish Package Modifier D = 24 contact Package Type Q = WQFN Product Family Identifier Product Type F = Front End Module Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = RF Products 1. Environmental suffix "F" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST12LF01 SST12LF01-QDF SST12LF01 Evaluation Kits SST12LF01-QDF-K Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2011 Silicon Storage Technology, Inc. DS75040A 18 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Packaging Diagrams TOP VIEW SIDE VIEW BOTTOM VIEW See notes 2 and 3 0.2 Pin 1 Pin 1 2.3 4.00 0.08 0.075 4.00 0.08 0.5 BSC 2.3 0.05 Max 0.30 0.18 0.45 0.35 0.80 0.70 1mm 24-wqfn-4x4-QD-2.0 Note: 1. Complies with JEDEC JEP95 MO-220J, variant WGGD-4 except external paddle dimensions. 2. From the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). Figure 16:24-contact Very-very-thin Quad Flat No-lead (WQFN) SST Package Code: QD (c)2011 Silicon Storage Technology, Inc. DS75040A 19 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Table 6:Revision History Revision 00 01 02 03 Description * * * * * * * * * * * * * 04 * * * * 06 * * * * * A * 05 * * * * Date Initial release of data sheet Updated pins 9 and 11 in Figure 2 on page 4 Updated pin 6, 9, and 11 in Table 1 on page 5 Updated Figure 11 on page 15 Updated Figure 15 on page 17 Updated "Product Ordering Information" on page 18 Revised Product Description on page 1 Changed signal gain value14 dB globally Changed low-noise figure to 1.45 dB globally Edited high temperature stability feature, page 1 Change low idle current to 75 mA, page 1 Edited Table 2, DC Electrical Characteristics; Table 3, AC Electrical Characteristics RX Chain; Table 4, AC Electrical Characteristics TX Chain Replaced Figures 3 through 11 with up-to-date graphs on pages 7 through 13 Added Figure 5 on page 8 Added Figure 12 on page 15 Edited Figure 15 on page 17 Revised RX chain gain value from 14 to 12 in "Features" and "Product Description" on page 2 and Table 4 on page 7. Updated Figures 3 and 5. Updated contact information Updated document status to "Data Sheet" Revised IIPE values in Features on page 1 and Table 4 on page 7 Changed definition of "F" environmental attribute in "Product Ordering Information" on page 18 Removed products with an "E" environmental attribute from "Product Ordering Information" on page 18 Revised Figure 1 on page 3 and the caption of Applied new document format Released document under letter revision system Updated Spec number from S71330 to DS75040 (c)2011 Silicon Storage Technology, Inc. Sep 2006 Jan 2007 Sep 2007 Jun 2008 Nov 2008 Feb 2009 Nov 2010 Dec 2011 DS75040A 20 12/11 PR OP R CO IE NF TAR ID Y E N AN TIA D L 2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet ISBN:978-1-61341-864-2 (c) 2011 Silicon Storage Technology, Inc-a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com (c)2011 Silicon Storage Technology, Inc. DS75040A 21 12/11