V12P12 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.51 V at IF = 6 A FEATURES TMBS(R) eSMP(R) Series * Very low profile - typical height of 1.1 mm * Ideal for automated placement * Trench MOS Schottky technology K * Low forward voltage drop, low power losses * High efficiency operation 1 * Meets MSL level 1, per LF maximum peak of 260 C 2 J-STD-020, * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-277A (SMPC) K Anode 1 Cathode Anode 2 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS IF(AV) 12 A VRRM 120 V IFSM 150 A EAS 100 mJ VF at IF = 12 A 0.63 V TJ max. 150 C For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code V12P12 UNIT V1212 Maximum repetitive peak reverse voltage VRRM 120 V Maximum average forward rectified current (fig. 1) IF(AV) 12 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2.0 A, L = 50 mH, TJ = 25 C EAS 100 mJ Peak repetitive reverse current at tp = 2 s, 1 kHz, TJ = 38 C 2 C IRRM 0.5 A Operating junction and storage temperature range TJ, TSTG - 40 to + 150 C Revision: 25-Jul-12 Document Number: 89094 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12P12 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA IF = 6 A SYMBOL TYP. MAX. UNIT VBR 120 (minimum) - V TA = 25 C IF = 12 A Instantaneous forward voltage TA = 25 C VF (1) IF = 6 A TA = 125 C IF = 12 A VR = 90 V Reverse current VR = 120 V 0.57 - 0.72 0.80 0.51 - V 0.63 0.70 TA = 25 C 13 - A TA = 125 C 7 - mA 50 500 A 16 50 mA TA = 25 C IR (2) TA = 125 C Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V12P12 RJA (1) 60 RJL 4 UNIT C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N V12P12-M3/86A UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.10 86A 1500 7" diameter plastic tape and reel 13" diameter plastic tape and reel V12P12-M3/87A 0.10 87A 6500 V12P12HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel V12P12HM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel Note (1) Automotive grade Revision: 25-Jul-12 Document Number: 89094 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12P12 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 14 Resistive or Inductive Load 12 10 8 6 TL Measured at the Cathode Band Terminal 4 2 110 120 TA = 100 C 1 0.1 0.01 TA = 25 C 130 140 150 10 20 30 40 50 60 70 80 90 Lead Temperature (C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 100 10 000 11 D = 0.3 10 D = 0.2 9 8 D = 0.1 7 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p D = 0.5 D = 0.8 Junction Capacitance (pF) Average Power Loss (W) TA = 125 C 0.001 0 100 D = 1.0 6 5 T 4 3 2 D = tp/T 1 1000 100 tp 10 0 0 2 4 6 8 10 12 0.1 14 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) TA = 150 C 10 TA = 150 C 10 TA = 125 C 1 TA = 100 C 0.1 TA = 25 C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 25-Jul-12 Document Number: 89094 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V12P12 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A Revision: 25-Jul-12 Document Number: 89094 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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