4-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
13
2
4
RF OUTRF OUTRF IN
GND
GND
MARKING - N3
NBB-300
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
• Narrow and Broadband Commercial and
Military Radio Designs
• Linear and Saturated Amplifiers
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Des igns (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
The NBB-300 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-perf ormance solution for gen-
eral purpose RF and micro wa ve amplifi cat ion ne eds . This
50Ω gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-300 provides flexibility and stability. The
NBB-300 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either packaged or chip (NBB-300-D) form, where its gold
metallization is ideal for hybrid circuit designs.
• Reliable, Low-Cost HBT Design
• 12.0dB Gain, +13.8dBm P1dB@2GHz
• High P1dB of +14.3dBm@6.0GHz and
+11.2dBm@14.0GHz
• Single Power Supply Operation
•50Ω I/O Matched for High Freq. Use
NBB-300 Cascadabl e Broadb and GaAs M MIC Amplifier DC to
12GHz
NBB-300-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NBB-300-D NBB-300 Chip Form (100 pieces minimum order)
NBB-300-E Fully Assembled Evaluation Board
NBB-X-K1 Extended Frequency InGaP Amp Designer’s Tool Kit
0
Rev A7 050414
UNITS:
Inches
(mm)
N3
0.070
(1.78)
0.040
(1.02)
0.020
0.200 sq.
(5.08)
45° 0.055
(1.40)
0.005
(0.13)
Package Style: Micro-X, 4-Pin, Ceramic
9
RoHS Compliant & Pb-Free Product
4-2
NBB-300
Rev A7 050414
Absolute Maximum Ratings
Parameter Rating Unit
RF Input Power +20 dBm
Power Dissipation 300 mW
De vice Current 70 mA
Channel Temperature 200 °C
Operating Temperature -45 to +85 °C
Storage Temperature -65 to +150 °C
Exceeding any one or a combination of these limits may cause permanent damage.
Parameter Specification Unit Condition
Min. Typ. Max.
Overall VD=+3.9V, ICC=50mA, Z0=50Ω, TA=+25°C
Small Signal Power Gain, S21 12.0 13.0 dB f=0.1GHz to 1.0GHz
11.0 13.0 dB f=1.0GHz to 4.0GHz
11.0 dB f=4.0GHz to 6.0GHz
9.0 9.5 dB f=6.0GHz to 12.0GHz
8.0 dB f=12 .0GHz to 14.0GH z
Gain Flatness, GF ±0.6 dB f=0.1GHz to 4.0GHz
Input and Output VSWR 2.4:1 f=0.1GHz to 4.0GHz
2.0:1 f=4.0GHz to 6.0GHz
2.5:1 f=6.0GHz to 12.0GHz
Bandwidth, BW 12.5 GHz BW3 (3dB)
Output Power @
-1dB Compression, P1dB 13.0 dBm f=2.0GHz
13.8 dBm f=6.0GHz
12.0 dBm f=14.0GHz
Noise Figure, NF 5.1 dB f=3.0GHz
Third Order Intercept, IP3 +27.1 dBm f=2.0GHz
Reverse Isolation, S12 -15 dB f=0.1GHz to 12.0GHz
De vice Voltage, VD 3.6 3.9 4.2 V
Gain Temperature Coefficient,
δGT/δT-0.0015 dB/°C
MTTF versus Temperature
@ ICC=50mA
Case Temperature 85 °C
Junction Temperature 138 °C
MTTF >1,000,000 hours
Thermal Resistance
θJC 272 °C/W JTTCASE
–
VDICC
⋅
---------------------------θJC °CWatt⁄()=
Caution! ESD sensitive device.
RF Micro De vices be lie ves the furnished inf ormation is cor rect and accu rate
at the time of this printin g. RoHS marking based on EUDirectiv e2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume respo nsibility for the use of the described produ ct(s).
4-3
NBB-300
Rev A7 050414
Typical Bias Configuration
Application notes related to biasing circuit, device footprint, and ther mal considerations are available on r equest.
Pin Function Description Interface Schematic
1RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
2GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating cur-
rent over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 5.0V is available, to provide DC feedback to prevent thermal run-
away. Because DC is present on this pin, a DC blocking capacitor, suit-
able for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
4GND
Same as pin 2.
Recommended Bias Resistor Va lues
Supply Voltage, VCC (V)5 8 10121520
Bias Resistor, RCC (Ω) 22 81 122 162 222 322
R
VCC VDEVICE
–()
ICC
-------------------------------------------
=
RF OUT
RF IN
C block
1 3
4
2
C block
In Out
L choke
(optional)
RCC
VCC
VDEVICE
4-4
NBB-300
Rev A7 050414
Chip Outline Drawing - NBB-300-D
Chip Dimensions: 0.017” x 0.01 7” x 0.004”
Sales Criteria - Unpackaged Die
Die Sales Information
• All segmented die are sold 100% DC-tested. Testing parameters for wafer-level sales of die material shall be nego-
tiated on a c ase-by-case basis.
• Segmented die are sele cted for customer shipmen t in accordance with RFMD Document #6000152 - Die Product
Final Visual Inspection Criteria1.
• Segmented die has a minimum sales volume of 100 pieces per order. A maximum of 400 die per carrie r is allow-
able.
Die Packa ging
• All die are packaged in GelPak ESD protective containers with the following specification:
O.D.=2"X2", Capacity=400 Die (20X20 s egments), Retention Level=High(X8).
• GelPa k ESD protective containers are placed in a static shield bag. RFMD recommends that once the bag is
opened the GelPak/s should be stored in a co ntrolled nitrogen environment. Do not press on the cover of a closed
GelPak, handle by the edges only. Do not vacuum seal bags containing GelPak containers.
• Precaution must be taken to minimize vibration of packaging during handling, as die ca n shift during transit 2.
Package Storage
• Unit packages should be kept in a dry nitrogen environment for optimal assembly, performance, and reliability.
• Precaution must be taken to minimize vibration of packaging during handling, as die ca n shift during transit2.
Die Handling
• Proper ESD precautions must be taken when handling die material .
• Die should be handled usin g vacuum pick-up equipment, or handled along the long side with a sharp pair of twee-
zers. Do not touch die with any par t of the body.
• When using automated pick-up and placement equipment, ensure that force impact is set correctly. Excessive f orce
may damage GaAs devices.
INPUTOUTPUT
GND
VIA
0.017 ± 0.001
(0.44 ± 0.03)
0.017 ± 0.0 01
(0.44 ± 0.03) 0.004 ± 0.001
(0.10 ± 0.03)
UNITS:
Inches
(mm) Back of chip is ground.
4-5
NBB-300
Rev A7 050414
Die Attach
• The die attach proce ss mechanically attache s the die to the circuit subst rate . In addition, the utili zation of proper die
attach processes electrically connect the ground to the trace on whic h the chip is mounted. It also establishes the
thermal path by which heat can leave the chip.
• Die should be mounted to a clean, flat surface. Epoxy or eutectic die attach are both acceptable attachment meth-
ods. Top and bottom metallization are gold. Conductive silver-fi lled epoxies are recommended. This procedure
involves the use of epoxy to form a joint between the backside gold of the chip and the metallized area of the sub-
strate.
• All connections should be made on the topside of the die. It is essential to performance that the backside be well
grounded and that the length of topside interconnects be minimized.
• Some die utilize vias f or eff ective g rounding. Care must be e x ercised when mounting die to preclude e xcess run-out
on the topside.
Die Wire Bonding
• Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are accept-
able practices for wire bonding.
• All bond wires shou ld be made as sho rt as possible.
Notes
1RFMD Document #6000152 - Die Product Final Visual Inspection Criteria. This document provides guidance for die
inspection personn el to determine final visual accept ance of die product prior to shipping to cu stomers.
2RFMD takes precautions to ensure that die product is shipped in accordance with quality standards established to min-
imize material shift. However, due to the physical size of die-level product, RFMD do es not guarantee that mater ial will
not shift dur ing transit, espec ially under extreme handling circums tances. Product replacement due to material sh ift will
be at the discretion of RFMD.
4-6
NBB-300
Rev A7 050414
Extended Frequency InGaP Amplifier Designer’s Tool Kit
NBB-X-K1
This tool kit was created to assist in the design-in of the RFMD NBB- and NLB-series InGap HBT gain block amplifiers.
Each tool kit contains the following.
• 5 each NBB-300, NBB- 310 and NBB-400 Ceramic Micro-X Amplifiers
• 5 each NLB-300, NLB-31 0 and NLB-400 Plastic Micro-X Amplifiers
• 2 Broadband Evaluation Boards and High Frequency SMA Connectors
• Broadband Bias Instructio ns and Specification Summary Index for eas e of op eration
4-7
NBB-300
Rev A7 050414
Tape and Reel Dimensions
All Dimensions in Millimeters
FLANGE B
T
F
330 +0.25/-4. 0
18.4 MAX
12.4 +2.0
Diameter
Thickness
Space Between Flange
13.0 +0.079/-0.158
0.724 MA X
0.488 +0.0 8
HUB
O
S
A
102.0 REF
13.0 +0.5/-0.2
1.5 MIN
Outer Diameter
Spindle Hole Diameter
Key Slit Width D20.2 MINKey Slit Diameter
4.0 REF
0.512 +0.020/-0.008
0.059 MIN
0.795 MIN
330 mm (13") REEL Micro-X, MPGA
SYMBOL SIZE (mm)ITEMS SIZE (inches)
BA
DO
S
F
T
LEAD 1
User Direction of Feed
Ao = 7.0 MM
A1 = 1.45 MM
Bo = 7.0 MM
B1 = 0.9 MM
Ko = 2.0 MM
NOTES:
1. 10 sprocket hole pitch cumulative tolerance ±0.2.
2. Camber not to exceed 1 mm in 100 mm.
3. Material: PS+C
4. Ao and Bo measured on a plane 0.3 mm above the bottom of t h e pocket.
5. Ko measured from a plane on the inside bottom of the pocket to the surface of the carrier.
6. Pock et po sition relative to s p rocket hole m easured as true position of pocket, not pocket hole.
A
A
SECTION A-A 8.0
Ao A1
2.5
B1
Bo
5.0 MIN.
2.00 ± 0.05
SEE NOTE 6
4.0
SEE NOTE 1
R0.3 MAX.
0.30
± 0.05
All dimensions in mm 5.0 +0.1
-0.0 B1
12.0
± 0.3
5.50 ± 0.05
SEE NOTE 6
1.75
R0.3 TYP.Ko
4-8
NBB-300
Rev A7 050414
Device Voltage versus Amplifier Current
TA = 25°C, VD = +3.9 V
3.80
3.85
3.90
3.95
4.00
35.00 40.00 45.00 50.00 55.00 60.00 65.00
Amplifier Current, ICC (mA)
Device Voltage, VD (V)
P1dB versus Frequency at 25°C
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Fr eq uency (GHz)
P1dB (dBm)
Third Order Intercept versus Frequency
0.0
5.0
10.0
15.0
20.0
25.0
30.0
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Fr equency (GHz)
Output IP3 (dBm)
POUT/Gain versus PIN at 6 GHz
TA = 25°C, VD = +3.9 V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
-7.0 -5.0 -3.0 -1.0 1.0 3.0 5.0 7.0
PIN (dBm)
POUT (dBm), Gain (dB)
Gain(dB)
Pout(dBm)
POUT/Gain versus PIN at 14 GHz
TA = 25°C, VD = +3.9 V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 6.0
PIN (dBm)
POUT (dBm), Gain (dB)
Pout(dBm)
Gain(dB)
Pout(dBm)
4-9
NBB-300
Rev A7 050414
Note: The s-parameter gain results shown below include device performance as well as evaluation board and connector
loss variations. The insertion losses of the evaluation board and conn ec tors are as follows :
1GHz to 4GHz=-0.06dB
5GHz to 9GHz=-0.22dB
10GHz to 14GHz=-0.50dB
15GHz to 20GHz=-1.08dB
S11 versus Frequency, Over Temperature
TA = 25°C, VD = +3.9 V
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
Fr equency (GHz)
S11 (dB)
+25 C
-40 C
+85 C
S12 versus Frequency, Over Temperature
TA = 25°C, VD = +3.9 V
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
Fr equency (GHz)
S12 (dB)
+25 C
-40 C
+85 C
S21 versus Frequency, Over Temperature
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
Fr equency (GHz)
S21 (dB)
+25 C
-40 C
+85 C
S22 versus Frequency, Over Temperature
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0
Fre quency (GHz)
S11 (dB)
+25 C
-40 C
+85 C
4-10
NBB-300
Rev A7 050414
