6168-55/BRAJC - Motorola / Freescale Semiconductor

MOTOROLA Order this data sheet

by 6168/D

SEMICONDUCTOR

rECHNICAL DATA

4K x4-Bit Fast Static

Random Access Memory *’ ~’;\*\i,,

..;:~~

..,.;.’:>./7

The 6168 is a16,384-bit static random access memory organized as 4096 words

of 4bits, fabricated using Motorola’s second-generation high-performance silicon- ~~t$”

gate CMOS (HCMOS Ill) technology. Static design eliminates the need for external

clocks or timing strobes, while CMOS circuitry reduces power consumption and l[[ft~f

provides greater reliability. Fast access time makes this device suitable for cache >

.li~. ‘.,

,ty.:li:.

and other high speed applications. .;.J.,,~:,1~

~,,~,>

.;+~~$..

.,, ,.,

The chip enable (~) pin is not aclock. In less than acycle time after ~goes high,

the part enters alow-power standby mode, remaining in that state until Egoes low

again. This feature provides reduced system power requirements without degrad-

ing access time performance.

The 6168 is available in a 300 roil, 20 lead ceramic dual-in-line, 20 terminal, and ~

rectangular ceramic LCC packages with the standard JEDECpinout. $\/,.<A

...

.Fully Static —No Clock or Timing Strobes Necessary ,,>,,~\$(/i., .-:

,$:,/}“‘.:.#:*’

.Three State output ‘~}~$$,

,,:;:

oFast Access Time (Maximum): “%

..l?,$i:!.,.

Address Chip Enable ,~f,~,+,~

,::},>>’t-~*j,;, .N,

6168-55 55 ns 55 ns ,..:,

<, yi

,~~\~:’i*),.,*X,

6168-70 70 ns ,>,\~4k\.

.,,~,~.:~

70 ns .$?/,.,,.,,.:.\’.~>,

.Low Power Operation @25°C: 120 mA Max (Active) ~~~x’s’

‘~\t&\

20 mA Max (Standb~ —WL Levels)

0.9 mA Max (Stand~M —CMOS Levels)

BLOCK

(MSBI

a\>&COOER

MEMORY MATRIX

128 ROWS X

128 COLUMNS

Il~_j ,Ms~“o ‘g ‘*“ ;LSB)

OMOTOROLA INC., 1988

A6 318 A2

Al 4 17 Al

A8 5 18 AO

A9 615 000

A1O 7 14 001

All 8 13 OQ2

E9 12 Da3

Vss 10 11 i

CASE 732-03

CERAMIC

A5 A4 Vcc A3

/L2J1 ‘LJ~j

III II II I

LJ20 ,8~– AZ

A6 :3 ,

–74

A7 ~ 17~_ Al

A8 :5 ,6r -A.

A9 _:6 15~ DQO

—7J

A1O ~ 14~ DQI

’18

Al1 ~ 13: DQ2

\r9’ Fd 7? F2 /

F Vss w DQ3

CASE 756C-01

CERAMIC

PIN NAMES

AO-A1l. .Addresslnput

~............... Write Enable

E................ Chip Enable

DQO-DQ3 Data Input/Output

Vcc .........+5V Power Supply

VSS ................ Ground

@MOTOROLA -

DS9703RI

TRUTH TABLE

EwMode VCC Current 1/0 Pin

HxNot Selected ISB1, ISB2 High-Z

LHRead Icc Dout

L L Write Icc Din

This device contains circuitry to protect the

inputs against damage due to high static

voltages or electric fields; however, it is ad-

vised that normal precautions be taken to

avoid application of any voltage higher than

maximum rated voltages to this high-

impedance circuit.

ABSOLUTE MAXIMUM RATINGS (See Note)

Rating Svmbol Value Unit

Power Supply Voltage Vcc –0.5 to +7.0 v,*!.

‘*{,3,

Voltage Relative to VSS for Any es:<.\.*:<2~,

Vin, Vout -0.5 to Vcc +0.5 v,.+.,>“*rit. ~

Pin Except VCC ,\,:,$.-,,.:.>~,:.

*, ~:.;i

Output Current (per 1/0) f“”[,l::i.,y~:\~.l.,,..,?

lout *20 mA *,...?.}’,~.’~..

.... f..,

\*,,,;,~l~‘v,,

Power Dissipation (TA =25°C) pD 1!0 w.:,\. .<.

.,y ,::..!4>:,:,

Temperature Under Bias ‘$:,,+$+~~,?

Tbias –55to +125 Qc .St,,{)+.l,\:k\:,?~.,.

‘s,. .

...*.:,,+..

Operating Temperature ...

TA –55to +125 Oc .,<{,J,,>$.

f.,.~..,,~,.~

!$)$ ..i>

Storage Temperature Tstq –65to +150 OC .~+,,

5<$!+..,:,,

..?.!>tt~

NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are ‘?,,,,”,,,,:~

~-.~‘.?,.t,,t,J,*,

,$+ ......

exceeded. Functional operation should ba restricted to RECOMMENDED ..?:~.,<:~’

~t*~

~i$ ‘“~~].*.V,.

OPERATING CONDITIONS. Exposure to higher than recommended voltages for .....

,~>>?<,,,>:t:y..

.*X ..:,.

extended periods of time couId affect device reliability. ‘i?,

,,%$!t>.x

.,k’ .,;>

~~.+’>,,,,$J,“>s~i.:j,.

‘~+,

~\><!.\.y<..,*

yq \,j: -

.’, 13$:1J,,,>~~::.

DC OPERATING CONDITIONS AND CH*C~ERISTICS

(VCC =5V+10%, TA =– 55 to +125”C, U@less ‘~herwise Noted)

\,.:..:~,\\,~>

! ..

RECOMMENDED OPERATING CONDITIONS ,1*.

,:7:<?V<:$,

~i ~

Parameter \

,,*:>,>&:‘$ Symbol Min Max Unit Notes

Supply Voltage (Operating Voltage Range) .,., .....~,,:.

‘.,,k,. Vcc 4.5

~.s 5.5 v

Input High Voltage ~t,s\~~

,L. VIH 2.2 Vcc +0.3 v1

Input Low Voltage j>$:+,$ VIL –0.3 0.8 v

\,.,$

,s.. 1, 2

..... ..’,

DC CHARACTERISTICS :~*.+t.a&y

;+>\\:, .

~;$$.,

.,$*’~:~

~~\),‘~~,~,j,~..,.

Parameter, ,l~y.~~~~ Svmbol Min Max Unit Notes

Input Leakage Current (All Inputs, ~n =O;~~~&) IIL —t2.0 PA

Output Leakage Current (~ =VIH or ~~”~$~~~ Vout =Oto VCC) IOZL —*2.0 WA 3

AC SupplV Current (lout =OmA,,~$&~,,~$ Min, Duty =10070) iCCA —90 mA 3

,, ,>

TTL Standby Current (~ =VI~j,,$:: ,~~ isBl —20 mA

1SB2 —5.0 mA

VOL —0.4 v

Output High Volta~~,F~@~ –4.0 mA) VOH 2.4 —v

““>%‘“:

i:\,,Y:

CAPACITAN~,,(&\~~* MHz, TA =25°C, sampled at initial device qualification and major redesigns rather than 100Y~ tested)

.*X...’.,, ..>~.~,,

~~~.

i$, ‘.!,., Characteristic SVmbol Tvp Max Unit

Input ,Q~~~~Mice All Inputs Except ~Cin 3

‘,${, ~5pF

.,,>?,

.,:...> E5 7

~..?,,.

l/O*pacitance Cl/o 5 7 pF

NOTES’:

1. Address rise and fall times while the chip is selected are Wns maximum.

2. VI L(min) =–0.3 Vdc; VIL(min) =–3.0 Vac (pulse widths20 ns).

3. input levels less than -0.3 Vor greater than VCC +0.3 Vwill cause 1/0 and power supply currents to exceed maximum rating.

MOTOROLA

26168

AC OPERATING CONDITIONS AND CHARACTERISTICS

(Vcc =5V*IOY., TA =–55 to +125°C, Unless Otherwise Noted)

Input ~ming Measurement Reference Level .......... 1.5 V

●Output Timing Measurement Reference Level .......1,5 V

Input Pulse Levels .......................0t03.OV Output Load, . . . . . . . . Figure 1A Unless Othewise Noted

Input Rise/Fall Time ..........., .............5ns

READ CYCLE (See Note 1)

Parameter Symbol 6168-55 6168-70

Standard Alternate Min Max Min Max Unit Notes

Read Cycle Time tAVAV tRC 55 —.;,,.\

70 —ns .?

Address Access ~me tAvQv t~ —55 —70

~Access Time tELQv tAcs —55 —70

~Low to Output Active tELQx tLz 5—5—

~High to Output High-Z tEHQz tHz o25 030 ,,f$,$ “w& 2,5

Output Hold from Address Change ‘t~Qx tOH 5—5‘?~t-+.l$l”

:+*,*,

.fj,,,‘~? ns

Power Up Time tELICCH tpu o—o,, ‘“~>$ ns 5

Power Down Time tEHICCL tpD —55 .,,,<$@70’ ns 5

_..t.~~;,

NOTES: ‘~’ “-5 s

!,!~.~~J?.-i,y,l,t

1. Wis high for read cycle, ~{.?a’

,,$$.

2. Transition is measured &500 mV_from steady-state voltage with load of Figure 1B. ~+++~\,! ~,,

,$> .,*:

, ,,~t>t,

3. Device is continuously selected (E =VIL). _\,lJ>,m\\..

.,y~.,*,.>,.,\>J.,

4. Addresses valid prior to or coincident with Egoing low. ~,+::i,‘~..~~-

5. This test is sampled and not IOOY, tested. ..~(.h.:$>*.:,

,,\.* ,$

~!J:ti,,,:;s:.~?.,.,,..

,v:~%ppk

,,1

A[ADDRESSI

4t~Qx

Q(DATA

OUT) DATAVALID

4tAVAV

~‘ELQV~ I

Vcc Icc ——— ___ ___

SUPPLY 1/ \l

CURRENT ISB

6168 MOTOROLA

WRITE CYCLE 1(W Controlled; See Note 1)

Parameter Symbol 6168-55 6168-70

Standard Alternate Min Max Min Unit Notes

Max

Write Cycle Time tAVAV Wc 50 —60 —ns

Address Setup Time tAVWL tAS o—o—ns

Address Valid to End of Write tAVWH tAW 40 —60 —ns

Write Pulse Width tWLWH twp 40 —60 —ns

Data Valid to End of Write tD~H tDW 25 —30 —ns *,,,

Data Hold Time tWHDx tDH 3—3—..?

ne:k~j~j$~:,

Write Low to Output High-Z WLQZ twz —25 —30 ~~’~~.1$.

~}!“’~~$j:1:$ 2,3

Write High to Output Active twHQx tow o—o—,,,, +.~w’” 2,3

Write Recovery Time tWHAx tWR o—,$,..-,,,.,~

o-:.,, .,./{.\$l~1ns

NOTES: .,~~~~.,,,.

:;*?i--

ik$’

1. Awrite occurs during the overlap of ~low and ~low, .*j/,, 4.!

~,tt**.:,’’’’i,..,.<::>

2. Transition is measured k500 mV from steady-state voltage with load in figure 1B. ,,? ({k *.V

3. This parameter is sampled and not IOOY. tested. .,:k.~> *

~,:~ t&..,$.$:$

.:J ,.S

TIMING LIMITS

The table of timing values shows either

aminimum or amaximum limit for each

parameter. Input requirements are specified

from the external system point of view.

Thus, address setup time is shown as a

minimum since the system must supply at

least that much time (even though most

devices do not require it). On the other

hand, responses from the memory are

specified from the device point of view.

Thus, the access time is shown as a

maximum since the device never provides

data later than that time.

WRITE CYCLE 2(~ Controlled; See Note 1)

Parameter Symbol 6168-55 6168-70

Standard Alternate Min Max Min Max Unit Notes

Write Cycle Time tAVAV twc 50 —60 —ns

Address Setup Time tAVEL tAS o—o—ns

Address Valid to End of Write tAVEH tAw 40 —60 —ns

Write Pulse Width tELEH tr!hf 45 —60 —ns 2.3

Data

-e”” .-

Valid to End of Write —.—

tDVEH tDw 25 —30 —ns

Data Hold ~me tEHDx tDH 3—3—,.:

ns ,:,...

Write Recovery Time tEHAx twR o—o—ns ~::2 ‘t’~b;

NOTES: ...

*,,..,,\

%,*:, .,*

D(DATAIN}

O(DATAOUT)

Available Speeds Available Packages in All Speeds

55 ns RC-DIP 20 pin

70 ns ULCCC 20 terminal

616S MOTOROLA

OUTLINE DIMENSIONS

R2 I1, MILUMflERS INCHES

1I30 NOTES: DIM MIN wMIN MAK

1. LEADS WITHIN 0.25 mm (0.010)DIA., TRUE A23,M 25,15 0.940 0,990

POSITIONAT SEAnNG PWNE, AT MAKIMUM B

IB 6.60 7.49 0,260 0.295

MATERIAL CONDITION. c3.s1 5.0s 0.150 0.200

A2. OIMLTOCENTER OF LEADS WHEN FORMEO D0.38 0.56 0.015 0.022 ,..,,,

PARALLEL, F1,40 1.65 0.055 0.065 ~~ “.%.*

3, DIM AAND 6INCLUOES MENISCUS. G2.M BSC 0.100BSC $**.y)]~.,,~.,)?

H0,51 1,27 0.020 0.050 ,.,;:.x ,“J,/,.,,

J0,30 O.MB 0,012 ‘? ~av,. “0,20

K3.16 4,06 0,125

L1,62BSC

M0“ 15” 0.

CASE 732-03 N0,25 I,,;;::$”

,,<t,$l.:!’. ..:,.

.,,.,, ,.:,

,’,,:}$,$,>),\, i,,,,

,... l~y \

~~.’t-,*4:

-T- 0ZOK

sUnNG

WNE 010.25 (O.OIOl@l TIA@l L@

g4~kH

10,92 0,420 0,430

~’F NOTES

!.9s 0,066 0,07s

l, DIMENSIONING ANOTOLERANCING PERANSI ,,8 0.71 0,022 0.028

Y14.5M, 19B2,

G“

,+!

2. CONTROLLING OIMENSION: INCH. .7, $2 .*

,\..j .!~N&$*

9.,.

“i\.\,.y

\\:3,\ 1,65 0,055 0.065

NH.>$$

-u

6.S5 O.?m 0.270

*~:’’’:*,t+w\+w\

CASE 7,~~1 ‘c

,,$~.;:,.

..>,>i*

“$,,$,,,~$~’

~D..w..,.\b.

‘.j<..ii.)i..$

i$,~

,..

-MMOTOROLA

6166