Order this data sheet by 6168/D MOTOROLA SEMICONDUCTOR rECHNICAL DATA ~ 4K x 4-Bit Fast Static Random Access Memory *' The 6168 is a 16,384-bit static random access memory organized as 4096 words of 4 bits, fabricated using Motorola's second-generation high-performance silicongate CMOS (HCMOS Ill) technology. Static design eliminates the need for external clocks or timing strobes, while CMOS circuitry reduces power consumption and provides greater reliability. Fast access time makes this device suitable for cache and other high speed applications. The chip enable (~) pin is not a clock. In less than a cycle time after ~ goes high, the part enters a low-power standby mode, remaining in that state until E goes low again. This feature provides reduced system power requirements without degrading access time performance. The 6168 is available in a 300 roil, 20 lead ceramic dual-in-line, 20 terminal, and ~ rectangular ceramic LCC packages with the standard JEDECpinout. ...$\/,.<A ~~t$" l[[ft~f > .li~. `., .;.J.,, ~:,1~ ,ty.:li: .~ ~,,~,> .;+ ~$.. .,, ,., A6 . Fully Static -- No Clock or Timing Strobes Necessary . Three State output o Fast Access Time (Maximum): ,,>,,~\ $(/ i., .-: ,$: ,/} "`.:.#:*' `~ }~$$, ,,:;:"% A8 ..l?, $i:!.,. ,..:, yi <, *X, 55 ns ,~~ .,,~, ~\~:'i*),., .:~ ,>,\~4k\. 6168-70 .$?/,.,,.,, .:.\'. ~>, 70 ns 70 ns Low Power Operation @ 25C: 120 mA Max (Active) ~`~\t&\ ~~x's' 20 mA Max (Standb~ -- WL Levels) 0.9 mA Max (Stand~M -- CMOS Levels) A1O Address . Al A9 Chip Enable , ~f,~,+,~ ,::},>>' t-~ *j,;, .N, 55 ns 6168-55 ~' ;\*\i,, ..;:~~ ..,.;.':>./7 All u 3 18 A2 4 17 Al 5 18 AO 6 15 000 7 14 001 8 13 OQ2 12 Da3 10 11 i E9 Vss CASE 732-03 CERAMIC BLOCK A5 A4 Vcc A3 I II II II I /L2J1 `LJ~j LJ20 ,8~- A6 :3 , I a\>&COOER (MSBI MEMORY MATRIX 128 ROWS X 128 COLUMNS 1 A7 -74 ~ A8 AZ 17~_ ,6r :5 Al - A. L A9 _:6 15~ DQO A1O --7J~ 14~ DQI 13: DQ2 Al1 '18 ~ \r9' Fd 7? F2 / F Vss w DQ3 CASE 756C-01 CERAMIC I l~_j I ,Ms~ "o `g `*" ;LSB) PIN NAMES AO-A1l. ~ .Addresslnput . . . . . . . . . . . . . .. E . . . . . . . . . . . . . . .. DQO-DQ3 Write Enable Chip Enable Data Input/Output Vcc . . . . . . . ..+5V VSS . . . . . . . . . . . . . . .. Power Supply Ground MOTOROLA OMOTOROLA INC., 1988 @ DS9703RI TRUTH TABLE E w H L L x H L ABSOLUTE MAXIMUM Mode VCC Current 1/0 Pin ISB1, ISB2 Icc Icc High-Z Dout Din Not Selected Read Write RATINGS This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this highimpedance circuit. (See Note) Rating Svmbol Value Unit ,*!. `*{,3, es:<.\.*:<2~, ,.+., >"*rit. ~ Voltage Relative to VSS for Any Vin, Vout v -0.5 to Vcc + 0.5 ,\,:,$ .- ,,.:.> ~,:. *, ~:.;i Pin Except VCC f""[,l::i.,y ~:\~.l.,,..,? *,...?.}', .. Output Current (per 1/0) *20 mA . ...~.'~ f.., lout ~`v,, .:,\.\*,,,;,~l .<. .,y ,::. .!4>:, Power Dissipation (TA = 25C) :, pD 1!0 w `$:,,+$+ ~~,? .St,,{)+. l,\:k\:,?~.,. Qc -55to +125 Temperature Under Bias .. Tbias ...`s,. . ..*.:,,+ .,<{,J , ,>$. f.,.~.. ,,~,.~ Oc Operating Temperature -55to +125 TA !$)$ ..i> .~+,, 5<$ !+..,:,, OC -65to +150 Storage Temperature Tstq ..?.!>tt~ `?,,,,", ,,,:~ ~ -.~`.?,.t,,t ,J ,*, ,$+ ...... NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are ..?:~. ,<: ~' ~t*~ exceeded. Functional operation should ba restricted to RECOMMENDED ].* . V,. ~i$ `"~~ ..... ,~>>?<,,, >:t:y.. OPERATING CONDITIONS. Exposure to higher than recommended voltages for . *X ..:,. `i?, extended periods of time couId affect device reliability. ,,%$ !t>.x .,k' .,;> ~~.+'>, ,,,$">s~i.: J, j,. `~+, ~\><!.\.y<. .,* yq \,j: .', 13$:1J,, ,>~ ~::. Power Supply Voltage Vcc DC OPERATING v -0.5 to +7.0 CONDITIONS AND CH*C~ERISTICS (VCC = 5 V + 10%, TA = - 55 to + 125"C, U@less `~herwise Noted) \,.:..:~,\\, ~> ,1*. ,:7:<?V<:$, ~i RECOMMENDED OPERATING CONDITIONS ~ \ Parameter Min Max ,,*:>,>&: `$ Symbol .,., .....~,,:. `.,,k,. Supply Voltage (Operating Voltage Range) Vcc 4.5 5.5 ~.s ~t,s\~~ Input High Voltage Vcc + 0.3 VIH 2.2 ,L. j>$:+,$ Input Low Voltage VIL - 0.3 0.8 \ ,.,$ ,s.. ..... ..', :~*.+t.a&y ;+>\\: , . DC CHARACTERISTICS .,$*'~:~~;$$., ~~\), `~~,~,j,~ ..,. Parameter, ,l~y .~~~~ Min Svmbol Max ! Input Leakage Current (All Inputs, ~n = O;~~~&) .. Unit Notes v v 1 v 1, 2 Unit Notes IIL -- t 2.0 Output Leakage Current (~ = VIH or ~~"~$~~~ Vout = O to VCC) IOZL -- * 2.0 WA 3 AC SupplV Current (lout = O mA,,~$&~,,~$ ,, ,> TTL Standby Current (~ = VI~j,,$:: ,~~ iCCA -- 90 mA 3 isBl -- 20 mA 1SB2 -- 5.0 mA VOL -- 0.4 v VOH 2.4 -- v Output High Volta~~,F~@~ - 4.0 mA) Min, Duty = 10070) PA i:\,"">%`": ,Y: CAPACITAN~,,(&\~~* MHz, TA = 25C, sampled at initial device qualification and major redesigns rather than 100Y~ tested) .*X...' .,, ..>~.~,, ~~~. Characteristic i$, `.!,., SVmbol Tvp Max Unit v Input ,Q~~~~Mice All Inputs Except ~ Cin 3 5 pF `,${, , ~ .,:...> .,,>? E 5 7 ~..?,,. l/O*pacitance Cl/o 5 7 pF NOTES': 1. Address rise and fall times while the chip is selected are W ns maximum. 2. VI L(min) = -0.3 V dc; VIL(min) = -3.0 V ac (pulse widths20 ns). 3. input levels less than -0.3 V or greater than VCC + 0.3 V will cause 1/0 and power supply currents to exceed maximum rating. MOTOROLA 2 6168 AC OPERATING (Vcc CONDITIONS = 5 V * IOY., TA = -55 AND CHARACTERISTICS to + 125C, Input ~ming Measurement Reference Level . . . . . . . . . . 1.5 V Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . ..0t03.OV Input Rise/Fall Time . . . . . . . . . . ., . . . . . . . . . . . ..5ns Unless Otherwise Noted) Output Timing Measurement Reference Level . . . . . . . 1,5 V Output Load, . . . . . . . . Figure 1A Unless Othewise Noted READ CYCLE (See Note 1) Symbol Parameter 6168-55 6168-70 Standard Alternate Min Max Min Max Read Cycle Time tAVAV tRC 55 -- 70 -- Address Access ~me tAvQv tELQv t~ tAcs -- -- 55 -- 70 ~ Access Time 55 -- 70 ~ Low to Output Active tELQx tLz 5 -- 5 ~ High to Output High-Z tEHQz t~Qx tHz tOH o 25 0 5 -- 5 Output Hold from Address Change ` Power Up Time tELICCH tpu o -- Power Down Time tEHICCL tpD -- 55 NOTES: 1. W is high for read cycle, 2. Transition is measured &500 mV_from steady-state voltage with load of Figure 1B. 3. Device is continuously selected (E = VIL). _ 4. Addresses valid prior to or coincident with E going low. 5. This test is sampled and not IOOY, tested. Notes ns .;,,. \ .? -- o _ Unit 30 ,,f$ ,$ "w& `?~t -+.l$l" :+*,*, .fj,,,`~? ns ns ,, `"~>$ ..t.~~;, .,,,<$@ 70' ns 2,5 5 5 `~' "-5 s !,!~.~ ~J?.-i,y,l,t ~{.?a' ,,$$. ~+++ ~ \,! ~,, ,$> .,*:, ,,~t>t, \,lJ>,m \\.. .,y~., *,.>,. ,\>J. , ~,+ ::i,`~..~~..~(.h.:$> *.:, ,,\.* ,$ ~!J:ti,, ,:;s:.~?.,.,,.. ,v:~%ppk ,,1 4 * A [ADDRESSI t~Qx 4 Q (DATAOUT) DATAVALID 4 > 4 tAVAV / ~ Vcc Icc SUPPLY ------ ___ ___ `ELQV~ 1/ I \l CURRENT ISB 6168 MOTOROLA 3 WRITE CYCLE 1 (W Controlled; See Note 1) Symbol Parameter Standard 6168-55 Alternate 6168-70 Unit Min Max Min Max 50 -- 60 -- ns -- o -- ns Write Cycle Time tAVAV Wc Address Setup Time tAVWL tAS Address Valid to End of Write tAVWH tAW 40 -- 60 -- ns Write Pulse Width tWLWH twp 40 -- 60 -- ns Data Valid to End of Write tD~H tDW 25 -- 30 -- Data Hold Time tWHDx tDH 3 -- 3 -- o Write Low to Output High-Z WLQZ twz -- 25 -- Write High to Output Active twHQx tow o -- o Write Recovery Time tWHAx tWR o -- o Notes ns *,,, ..? ne:k~j~j$ ~:, ~~'~~.1$. ~}!"'~~$j:1:$ 2,3 30 --,,,, +.~w'" 2,3 ,$,.. ,,,.,~ -:.,, .,./{. \$l~1n s .,~~~~.,,,. :;*?i-ik$' .*j/,, ,.4.! ~,tt**.:,''''i,.., .<::> ,,? ({k *.V .,:k.~> * ~,:~ t&..,$.$:$ .:J ,.S NOTES: 1. A write occurs during the overlap of ~ low and ~ low, 2. Transition is measured k500 mV from steady-state voltage with load in figure 1B. 3. This parameter is sampled and not IOOY. tested. TIMING LIMITS The table of timing values shows either a minimum or a maximum parameter. Input requirements from Thus, the external address minimum system setup much from the maximum of view. is shown as a since the system must supply at least that Thus, are specified point time time (even devices do not require hand, responses from specified limit for each the access device time since the device data later than that time. though most it). On the other the memory are point of view. is shown as a never provides WRITE CYCLE 2 (~ Controlled; See Note 1) Symbol Parameter 6168-55 Standard Alternate Min 6168-70 Max Min Max Unit Write Cycle Time tAVAV twc 50 -- 60 -- ns Address Setup Time tAVEL tAS o -- o -- ns Address Valid to End of Write tAVEH tAw 40 -- 60 -- ns Write Pulse Width tELEH tr!hf 45 -- 60 -- ns Data Valid to End of Write tDVEH tDw 25 -- 30 -- ns Data Hold ~me tEHDx tDH 3 -- 3 -- ns Write Recovery Time tEHAx twR o -- o -- ns .- -e"" NOTES: Notes 2.3 --. -- ,.: ,:,... ~::2 ...`t'~b; * ,,..,,\ %, *:, .,* D (DATAIN} O (DATAOUT) Available 616S Speeds Available Packages in All Speeds 55 ns R C-DIP 20 pin 70 ns U LCCC 20 terminal MOTOROLA 5 OUTLINE DIMENSIONS R2 I 1, NOTES: 1. LEADS WITHIN 0.25 mm (0.010) DIA., TRUE POSITION AT SEAnNG PWNE, AT MAKIMUM MATERIAL CONDITION. 2. OIMLTOCENTER OF LEADS WHEN FORMEO PARALLEL, 3, DIM A AND 6 INCLUOES MENISCUS. I 30 1 IB A CASE 732-03 010.25 (O.OIOl@l TIA@l ~'F G" 9 L N c a - ,..,,, ~~ ".%.* $**.y)]~.,,~.,)? ,.,; :.x ,"J,/,.,, `? ~av,. " 0. H L@ -u .>$$ *~:''':*,t+w\+w\ \\:3,\ 10,92 0,420 0,430 !.9s 0.71 0,066 0,022 0,07s 0.028 1,65 6.S5 0,055 O.?m 0.065 0.270 CASE 7,~~1 `c ,,$~ ..>,>i*.;:,. "$,, $,,,~$~' ~D..w ..,.\b. `.j<..ii.)i.. $ i$, ~ ,.. O M c D F G H J K L M N INCHES MIN MAK 0.940 0,990 0,260 0.295 0.150 0.200 0.015 0.022 0.055 0.065 0.100 BSC 0.020 0.050 O.MB 0,012 0,125 ,,;;::$" ,,<t,$l.:!'. ..:,. .,,.,, i,,,.:, ,',,:}$,$,>),\, ,, , .. l~y \ ~~.'t, *4: NOTES l, DIMENSIONING ANOTOLERANCING PER ANSI ,,8 Y14.5M, 19B2, ,+! 2. CONTROLLING OIMENSION: INCH. .* .7, $2 .!~N&$* ,\..j .,. "i\.\,.y MB g4~kH B MILUMflERS MIN w 23,M 25,15 6.60 7.49 3.s1 5.0s 0.38 0.56 1,40 1.65 2.M BSC 0,51 1,27 0,20 0,30 4,06 3.16 1,62 BSC 0" 15" 0,25 I 0 ZOK -TsUnNG WNE 7J ~ DIM A MOTOROLA 6166