73
Alte rnate Source/
Second Source Photodiodes VTD34H
(BPW34 INDUSTRY EQUIVALENT)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded
plastic package. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. These photodiodes are
designed to provide excellent sensitivity at low levels
of irradiance.
PACKAG E DIMENSIONS inch (mm)
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUM RATING S
St or ag e Tem perat ur e : -2 0°C to 80 °C
Oper ati ng Te mperat ure: -2 0°C to 80 °C
ELECTRO-OP T ICA L CHARACTERI ST ICS @ 25°C
SYMBOL CHARACTERISTIC TEST CONDITIONS VTD34H UNITS
Min. Typ. Max.
ISC Short Circuit Current 1000 Lux, 2850 K 50 70 µA
TC ISC ISC Tem perature Coefficient 2850 K .20 %/° C
VOC Open Circuit Voltage H = 1000 Lux, 2850 K 300 365 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 10 V 2 30 nA
CJJunction Capacitance @ 1 MHz, VR = 0 V 60 pF
tR/tFRise/F all Time @ 1 kΩ Lead VR = 10 V, 833 nm 50 nsec
SRSensitivity @ Peak 0.60 A/W
λrange Spectral Application Range 400 1100 nm
λpSpectral Respo nse - Peak 900 nm
VBR Breakdown Voltage 40 V
θ1/2 Angular Resp . -50% Resp. Pt. ±50 Degrees
NEP Noise Equiv alent Power 4.8 x 10-14
D* Specif ic Detectivit y 5.7 x 1012 WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
RoHS Compliant
