Alternate Source/ Second Source Photodiodes VTD34H (BPW34 INDUSTRY EQUIVALENT) PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded plastic package. Suitable for direct mounting to P.C.B. Arrays can be formed by positioning these devices side by side. These photodiodes are designed to provide excellent sensitivity at low levels of irradiance. Storage Temperature: Operating Temperature: -20C to 80C -20C to 80C RoHS Compliant ELECTRO-OPTICAL CHARACTERISTICS @ 25C SYMBOL CHARACTERISTIC VTD34H TEST CONDITIONS Min. ISC TC ISC VOC TC VOC Short Circuit Current 1000 Lux, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 1000 Lux, 2850 K VOC Temperature Coefficient 2850 K Typ. 50 300 UNITS Max. 70 A .20 %/C 365 mV -2.0 mV/C ID Dark Current H = 0, VR = 10 V 2 CJ Junction Capacitance @ 1 MHz, VR = 0 V 60 pF 50 nsec 0.60 A/W tR/tF Rise/Fall Time @ 1 k Lead VR = 10 V, 833 nm SR Sensitivity @ Peak range Spectral Application Range p Spectral Response - Peak VBR Breakdown Voltage 1/2 Angular Resp.-50% Resp. Pt. NEP Noise Equivalent Power D* 400 1100 73 nm nm 50 Degrees 4.8 x 10 -14 W Hz V 5.7 PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 nA 900 40 Specific Detectivity 30 x 1012 Phone: 877-734-6786 Fax: 450-424-3413 cm Hz W www.perkinelmer.com/opto