ZXMN10A11G
ISSUE 1 - MARCH 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 100 V ID=250A, VGS=0V
Zero Gate Voltage Drain Current IDSS 1AV
DS=100V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 2.0 4.0 V ID=250A, VDS=V
GS
Static Drain-Source On-State
Resistance (1) RDS(on) 0.60
0.70 ⍀
⍀
VGS=10V, ID=2.6A
VGS=6V, ID=1.3A
Forward Transconductance (3) gfs 3.95 S VDS=15V,ID=2.6A
DYNAMIC (3)
Input Capacitance Ciss 274 pF VDS=50V,V
GS=0V,
f=1MHz
Output Capacitance Coss 21 pF
Reverse Transfer Capacitance Crss 11 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.7 ns
VDD =50V, ID=1A
RG=6.0⍀,V
GS=10V
Rise Time tr1.7 ns
Turn-Off Delay Time td(off) 7.4 ns
Fall Time tf3.5 ns
Gate Charge Qg3nCV
DS=50V, VGS=5V,
ID=2.5A
Total Gate Charge Qg5.4 nC VDS=50V,VGS=10V,
ID=2.5A
Gate-Source Charge Qgs 1.4 nC
Gate-Drain Charge Qgd 1.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.85 0.95 V TJ=25°C, IS=1.85A,
VGS=0V
Reverse Recovery Time (3) trr 26 ns TJ=25°C, IF=1.0A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 30 nC
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.