MOSPOWER Selector Guide (Continued) N-Channel MOSPOWER (continued) . Breakdown Ip Power Device Voltage (Omen Continuous Dissipation Part (Volts) (Ohms (Amps) (Watts) Number 100 0.055 40.0 150 IRF150 100 0.08 33.0 150 IRF152 100 0.085 27.0 125 IRF140 100 0.11 24.0 125 IRF 142 100 0.18 14.0 100 VN1000A 100 0.18 14.0 75 IRF130 100 0.25 12.0 100 VN1001A 100 0.25 12.0 75 IRF 132 100 0.3 8.0 40 (RF 120 100 0.4 7.0 40 IRF122 90 4.0 1.9 25 2N6658 90 45 1.8 25 VNSSAA e; 90 5.0 1.7 25 VNSOAA 80 0.18 14.0 100 VNQ8B00A Ee 80 0.25 12.0 100 VNO0801A 60 0.055 40.0 150 IRF 151 TO-3 60 0.08 33.0 150 IRF153 60 0.085 27.0 125 IRF141 60 0.11 24.0 125 IRF143 60 0.12 18.0 100 VNOGO0A 60 0.15 16.0 100 VNOGOTA 60 0.18 14.0 75 IRF131 60 0.25 12.0 75 IRF133 60 0.3 8.0 40 IRF121 60 0.4 10.0 80 VN64GA 60 0.4 7.0 40 IRF123 60 3.0 2.0 25 2N6657 60 3.5 2.0 25 VNG6G7AA 40 0.12 18.0 100 VNO400A 40 0.15 16.0 100 VNO401A 35 1.8 2.0 25 2N6656 35 25 2.0 25 VN35AA 500 0.85 8.0 125 (RF840 500 1.10 7.9 125 IRF842 500 1.5 45 75 VN5001D 500 1.5 45 75 IRF830 500 2.0 4.0 75 VN5002D 500 2.0 4.0 75 IRF832 500 3.0 25 40 IRF820 500 4.0 2.0 40 IRF822 450 0.85 8.0 125 IRF841 450 1.10 7.0 125 IRF843 450 1.5 45 75 VN4501D 450 1.5 45 75 IRF831 450 2.0 4.0 75 VN4502D 450 2.0 4.0 75 IRF833 450 3.0 2.5 40 IRF821 450 4.0 2.0 40 IRF823 400 0.55 10.0 125 IRF740 TO-220AB 400 0.80 8.0 125 IRF742 400 1.0 6.0 75 VN4000D 400 1.0 55 75 t{RF730 400 1.5 5.0 75 VN4001D 400 1.5 45 75 IRF732 400 1.8 3.0 40 IRF720 400 2.5 2.5 40 IRF722 350 0.55 10.0 425 IRF741 350 0.80 8.0 125 IRF743 350 1.0 6.0 75 VN3500D 350 1.0 55 75 IRF731 350 1.5 5.0 75 VN3501D 350 1.5 45 75 IRF733 350 1.8 3.0 40 IRF721 350 25 25 40 IRF723 240 6.0 1.4 20 VN2406D Siliconix 1-5 SPINS 10P9/SG YIMOdSOW2N6656 = VN35AA MOSPOWER FEATURES a High Input impedance a Extremely Fast Switching a Rugged Dissipation Limited SOA a Internal Drain-Source Diode BENEFITS a Reduced Component Count = Simpler Designs Directly Interfaces CMOS & TTL m Improved Circuit Performance a Increased Reliability Dey Siliconix N-Channel Enhancement Mode These power FETs are designed especially for low power high frequency inverters, interface to CMOS and TTL logic, and line drivers. Product Summary BVpss Rosion) Part Number (Volts) (Ohms) Package 2N6656 35 1.8 TO-3 VN35AA 35 2.5 TO-3 a Drain-Source Voltage .............. 35V Drain-Gate Voltage ................ 35V Gate Current (Peak).............. +1A Gate-Source Voltage ............ + 40V Drain Current Continuous!...............0005 +2A Pulsed2..... 2... eee ee eee +3A Maximum Dissipation at 25C Case . .25W ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Linear Derating Factor....... 200 mMWI/C Operating and Storage Temperature....... 55C to +150C Lead Temperature (1/16 from Case for 10 secs) . . +300C Notes: 1. Limited by package dissipation. 2. Pulse test80us to 300us, 1% duty cycle. PACKAGE DIMENSIONS 0.875 0.450 (71.43) [we (22,225) 2-4 0250 76.35) 0.138 MAX (3.429) MAX T aT 0.312 SEATING O83 1.072) T 17.995) ~ 0038 (0.965) Min PLANE 1107 (G40) Se 177 (28. _ 0,875 (17.148) VA7T (28.896) PIN 1 Gate 0686 (76.637) PIN 2 - Source : Th 0.188 wax CASE Drain 7 (4,775) L~ BOTH ENDS S 0.ago (71.176) Y a U 0.420 (10.668) YY 1 Po ook Bie 938) 0.225 (5.775) - 0208 5207) rrom view (13.335) A MAX TO-3 5: * 2-40 SiliconixELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted) Part . Parameter Number Min Max Unit Test Conditions Static BVpss Drain-Source Breakdown Voltage All 36 V Ves= 0, lp = 10 pA Vesith) Gate Threshold Voltage All 8 2.0 Vos= Vas. lp=1mA 100 Veg = 18V, Vog=0 lass Gate-Body Leakage Current _ Alt nA 500 Ves = 18V, Vog = 0, Ta = 125C 10 Ves =0, Vos = Max Rating loss Zero Gate Voltage Drain Current All BA 500 Veg = 0, Vog = 0.8 Max Rating, Ts = 125C lpjon) ON-State Drain Current! All 1.5 A Vos = 25V, Veg = 10V , All 1.5 Vas = SV, Ip =0.3A Vpsion) Drain-Source ON-State Voltage VN35AA 2.5 Vv Vas = 10V, Ip=1.0A 2N6656 1.8 All 5.0 Ves = 5V, Ip=0.3A Drain-Source ON-State Tosion) Resistance 2N6656 1.8 Q Vos 10V, Ip= 1.08 VN35AA 2.5 Dynamic Smail Signal Drain-Source _ _ _ fasion) QN.State Resistance 2N6656 1.8 2 Ves = 10V, Ilp=1.0A, f= 1 kHz Os Forward Transconductance All 170 mS | Vog=24V, Ip=0.5A Ciss Input Capacitance All 50 T f i | 1 Crss Reverse Transfer Capacitance All 0 pF Vos = 25V, Veg=0, f= 1 MHz Cc Common Source Output Alt 65 oss Capacitance ton Turn-ON Time Alt 10 , ns Vop = 25V, Ip=1A, Ry = 232, Ry = 252 torr Turn-OFF Time All 10 Drain-Source Diode Characteristics Typ Vso Forward ON Voltage All -0.9 Vv Ig =-1A, Veg =0 ter Reverse Recovery Time All 35 ns Ves= 0, Ir =IR=1.0A *JEDEC Devices specified at 5 ns max for each parameter taion), tr, tagotty te Note: 1. Pulse test: 80-300 ns, 1% duty cycle. TEST CIRCUITS FIGURE 1. Switching Test Circuit cco | Rgen | | 20v | | | Jj clRcurT PULSE UNDER PW. = 1 ys DUTY CYCLE = 1% Cg <50 pF Refer to VNMA Design Curves (See Section 4) FIGURE 2. JEDEC Reverse Recovery Circuit AAA - vVvv 50 Q di/dt Adjust (1 - 27 uH) + 570 50uF - ; IN4933 Tr ((Pk)Adjust | l N~ 1 5 2400 + IN4001 a bal 4000UF oan, wr - < R< 0.259 L $0.01uH Lt ? i Av 1N4723 FROM TRIGGER CKT J 2N4204 J Score J Siliconix 2-41 VVSENA 9S99NZ-FYPICAL STATIC CHARACTERISTICS VNMA (Pulse width 80yus 300s, Duty cycle: 1%, To = 25C) Part Numbers: VN99AA, VN99AB, VN9OAA, VNSOAB, VN8SSAD, VNS9AF, VN&8AD, VNS8AF, VN80AF, VNO808M, VN67AA, VN67AD, VN67AB, VN67AF, VN66AD, VNG6AF, VNO606M, VN46AD, VN46AF, VN40AD, VN40AF, VN35AA, VN35AB, 2N6656, 2N6657, 2N6658, 2N6659, 2N6660, 2N6661 -Ohmic Region Leakage Current Vane 100 e z 40 z z Vbs =32V = 10 : yu 3 5 3 3 sv So A lass = 5V s Iss Yo 1 by 0.01 A 2 av g V4 A. 3V J Yes = 15V 0 0.001 0 1 2 3 4 5 6 7 8 9 10 2 50 75 100 125 150 VpsDRAIN SOURCE VOLTAGE (VOLTS) Tc-~ CASE TEMPERATURE (C) Temperature Effects on rpsion) ON Resistance Characteristics 2.0 4.0 3 _ 38 2 2 36 4 45 5. ig 2 34 WwW oO 2 2 3.2 6 a 16 & 30 N vn 2 woos = z 9 2.6 5S 05 L + = 24 < 2 22 0 - 2.0 50 -25 0 25 50 75 100 125 150 0 2 4 6 8 1 12 144 16 18. 20 T,JUNCTION, TEMPERATURE (C) VagVas(th) GATE ENHANCEMENT VOLTAGE (VOLTS) Transfer Characteristics Threshold Region 1.0 Vps = 10V : 08 q 5 5 G 06 ai x ae & 2 3 oO z 04 z < 4 4 2 0.2 = 0 . 1 2 3 4 5 6 0 05 8 10 15 2.0 25 VasGATE SOURCE VOLTAGE (VOLTS) VgsGATE SOURCE VOLTAGE (VOLTS) 01/83 4-12 SiliconixTYPICAL CHARACTERISTICS (Cont'd) VNMA Part Numbers: VN99AA, VN99AB, VNS0AA, VNSOAB, VNSSAD, VNS9AF, VNSSAD, VNSSAF, VNSOAF; VNOSOSM, | VN67AA, VN67AD, VNG67AB, VN67AF, VN@6AD, VN66AF, VNOGO6M, VN46AD, VN4GAF, VN40AD, VN40AF, VN35AA, VN35AB, 2N6656, 2N6657, 2N6658, 2N6659, 2N6660, 2N6661 Power Derating a E z= z Q - < a 3 a at z= 3 a & 0 40 80 120 160 200 TEMPERATURE (C) Safe Operatin Area VN99AB, VNSOAB, 2N6661 a a = < z w = 4 ae > 3 z < x i a 1 | | . | 1 10 100 Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) Safe Operating Area VNG67AA, 2N6657 LT | or a rE nn \ J a : = i 4 < Le ce ee aon se os ne om ane _y 4 5 tJ re 2N6657 N |VNG7AA 590 5 4 oO E q z r q = C q 3 r 4 a a 4 | a 5 4 0.1 Ll ebeveerdeeabvrabelicdatal 1 10 100 Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) Ip DRAIN CURRENT (AMPS) lp ORAIN CURRENT (AMPS) Ip DRAIN CURRENT (AMPS) ond ts NS0AA, 2N6658 10 . N 2NG658. XN . * Ak : S25. 0.1] ab 1 10 100 Vos DRAIN:TO-SOURCE VOLTAGE (VOLTS) Safe Operating Area VN89AF, N88AF, VNS0AF 10 0.41 0.01 1 10 100 Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) Safe Operating Area VN66AD, VN67AD ITT TIT TI 10 1.0 5 3% ed bait pe 10 100 Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.1 . 1 Siliconix 4-13 VINNATYPICAL CHARACTERISTICS (Cont'd) VNMA Part Numbers: VN99AA, VN99AB, VN90AA, VNS0AB, VN89AD, VN8S9AF, VN88AD, VN88AF, VNSOAF, VNO808M, VN67AA, VN67AD, VN67AB, VN67AF, VN66AD, VN66AF, VNO606M, VN46AD, VN46AF, VN40AD, VN4OAF, VN35AA, VN35AB, 2N6656, 2N6657, 2N6658, 2N6659, 2N6660, 2N6661 Safe Operating Area Safe Operating Area VN66AF, VNG6G7AF VN67AB, 2N6660 10 10 ~ 10 4S. 3 q @ 100 \ J e J = nee on am ae am ao ae oe = 4 a J < VNGGAF <a = 4 Z 1 3 - 1 = c q ud q ce 4 fod q > 4 7 4 > 4 2 a 5 4 = z = 0.1 q 0.1 z 4 . 4 4 | q 2 7 Ss 4 0.01 0.01 1 40 100 1 10 100 Vps DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vps DRAIN-TO-SOURCE VOLTAGE (VOLTS) Safe Operating Area Safe Operating Area VN46AD, VN40AD VN46AF, VN40AF 10- 77 rity 10 TTT I TI17 a rE 7 eo F&F j g r 1 = Oe OT 100 pS < a ee a a ae an ay ay 100 NS < 1 5 VN46AD NS 1500 ns| 5 t0b 500 1S. Z VNA0AD St ms a F ims 3 5S tb Ns ms a fF ems 2 E lnc z2 fF pe | a c 7 @ O1- 4 s r 7 a rc q r 1 | E 7 e + | 2 f | 0.1 L pe tl 1 1 Le 01 ZL po il 1. 4. deeleenledy 1 10 100 10 100 Vps DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos DRAIN SOURCE VOLTAGE (VOLTS) Sate Operating Area Safe Operating Area 2N6656, VN35AA 2N6659, VN35AB 10 p> Ty 10] aan ae Ff 1 a Ff 1 o r 100 pS 4 a _ 7250 2S 4 = Pe 1 z= PoNe6s9 NNT og + ~ X \ 500 1S = _ ~~ 1 z |} nnn NN J z 1EVN35AB yim a Ww NY 1" ms wi E 5ms. 4 x ab ide 4 5 r J : FE pe J z } pe < i 7 = oak + a r ] a E 4 | I r q 2 f | 2 of ] o41 1 1 1 pool I. Le 0.01 i i L pit 1 ptt 1 10 100 1 10 100 Vps DRAIN-TO-SOURCE VOLTAGE Vps -- DRAIN-TO-SOURCE VOLTAGE (VOLTS) 4-14 Siliconix