55
SQD300BA60
TRANSISTOR MODULE Hi-
UL;E76102 M
Thermal Impedance
(junction to case)
Maximum Ratings Tj 25
Electrical Characteristics Tj 25
Symbol Item Conditions Ratings
SQD300BA60 Unit
VCBO Collector-Base Voltage 600 V
VCEX Collector-Emitter Voltage VBE 2V 600 V
Emitter-Base Voltage VVEBO 10
ICCollector Current =pw 1ms 300 600 A
ICReverse Collector Current 300 A
IBBase Current 18 A
PTTotal power dissipation TC25 1380 W
TjJunction Temperature 40 150
Tstg Storage Temperature 40 125
VISO Isolation Voltage A.C.1minute 2500 V
Mounting
Torque
M6
Terminal
M6
Recommended Value 2.5 3.9 25 40 4.7 48
Recommended Value 2.5 3.9 25 40 4.7 48
Terminal
M4 Recommended Value 1.0 1.4 10 14 1.5 15
N m
(fB)
Mass Typical Value 460 g
Unit A
Symbol Item Conditions Ratings
Min. Max.
4.0
1200
750
2.5
3.0
2.0
8.0
2.0
1.8
0.09
0.3
Unit
ICBO Collector Cut-off Current VCB VCBO mA
IEBO Emitter Cut-off Current VEB VEBO mA
450
V
CEO SUS
V
CEX SUS
Collector Emitter Sustaning
Voltage
Ic 1A
600
Ic 60A IB2 10A V
hFE DC Current Gain Ic 300A VCE 2.5V
VCE sat
Collector-Emitter Saturation Voltage
Ic 300A IB400mA V
VBE sat
Base-Emitter Saturation Voltage
Ic 300A IB400mA V
s
V
/W
ton On Time
Storage Time
Fall Time
Transistor part
Diode part
ts
tf
Vcc 300V Ic 300A
IB1 0.6A IB2 6A
Ic 300A
VECO
Rth j-c
Switching
Time
Collector-Emitter Reverse Voltage
Typ.
200 ns
Vcc 300V, Ic 300A, di/dt 300A/s, V
BE
5V
trr Reverse Recovery time
SQD300BA60 is a Darlington power transistor module with a ULTRA HIGH hFE, high
speed, high power Darlington transistor. The transistor has a reverse paralleled fast
recovery diode (trr 200ns). The mounting base of the module is electrically isolated
from semiconductor elements for simple heatsink construction,
IC300A, VCEX 600V
Low saturation voltage for higher efficiency.
ULITRA HIGH DC current gain hFE. hFE 750
Isolated mounting base
VEBO 10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
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