1. Product profile
1.1 General description
NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.
1.2 Features and benefits
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability
1.3 Applications
Intended for Radio Frequency (RF) front end application s in the GHz range, such as:
analog and digital cellular telephones
cordless telephones (Cordless Telephone (CT), Personal Communication
Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)
radar detectors
pagers
Satellite Antenna TeleVision (SATV) tuners
repeater amplifiers in fiber-optic systems
1.4 Quick reference data
BFG310/XR
NPN 14 GHz wideband transistor
Rev. 2 — 15 September 2011 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCBO collector-base voltage open emitter - - 15 V
VCEO collector-emitter voltage open base - - 6 V
ICcollector current (DC) - - 10 mA
Ptot total power dissipation Tsp 145 C[1] --60mW
hFE DC current gain IC=5mA; V
CE =3V;
Tj=25C60 100 200
CCBS collector-base
capacitance VCB = 5 V; f = 1 MHz;
emitter grounded - 0.17 0.3 pF
fTtransition frequency IC=5mA; V
CE =3V;
f=1GHz; T
amb =25C-14-GHz
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 2 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
[1] Tsp is the temperature at the soldering point of the collector pin.
2. Pinning information
3. Ordering information
4. Marking
[1] * = p: made in Hong Kong.
MSG maximum stable gain IC=5mA; V
CE =3V;
f=1.8GHz; T
amb =25C-18-dB
s212insertion power gain IC=5mA; V
CE =3V;
f=1.8GHz; T
amb =25C;
ZS=Z
L=50
-14-dB
NF noise figure s=opt; IC=1mA;
VCE =3V; f=2GHz -1-dB
Table 1. Quick reference data …continued
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Pinning
Pin Description Simplified outline Symbol
1 collector
2emitter
3base
4emitter
21
43
sym086
1
2, 4
3
Tabl e 3. Ordering i nfo rmation
Type number Package
Name Description Version
BFG310/XR SC-61AA plastic surface mounted package; reverse pinning;
4 leads SOT143R
Table 4. Marking codes
Type number Marking code[1]
BFG310/XR S1*
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 3 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
5. Limiting values
[1] Tsp is the temperature at the soldering point of the collector pin.
6. Thermal characteristics
[1] Tsp is the temperature at the soldering point of the collector pin.
7. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 15 V
VCEO collector-emitter voltage open base - 6 V
VEBO emitter-base voltage open collector - 2 V
ICcollector current (DC) - 10 mA
Ptot total power dissipation Tsp 145 C[1] -60mW
Tstg storage temperature 65 +175 C
Tjjunction temperature - 175 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction to solder point Tsp 145 C[1] 530 K/W
Table 7. Characteristics
Tj=25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off current IE=0A; V
CB =5V - - 15 nA
hFE DC current gain IC=5mA; V
CE = 3 V 60 100 200
CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.17 0.3 pF
CCES collector-emitter capacitance VCE = 5 V; f = 1 MHz; base grounded - 0.28 - pF
CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz; collector grounded - 0.22 - pF
fTtransition frequency IC=5mA; V
CE = 3 V; f = 1 GHz;
Tamb =25C-14-GHz
MSG maximum stable gain IC=5mA; V
CE = 3 V; f = 1.8 GHz;
Tamb =25C-18-dB
s212insertion power gain IC=5mA; V
CE =3V; T
amb =25C;
ZS=Z
L=50
f = 1.8 GHz - 14 - dB
f=3GHz - 11 - dB
NF noise figure s=opt; IC=1mA; V
CE =3V; f=2GHz - 1 - dB
PL(1dB) output power at 1 dB gain
compression IC=5mA; V
CE = 3 V; f = 1.8 GHz;
Tamb =25C; ZS=Z
L=50
-1.8-dBm
IP3 third order intercept point IC=5mA; V
CE = 3 V; f = 1.8 GHz;
Tamb =25C; ZS=Z
L=50
-8.5-dBm
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 4 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
Fig 1. Power derating curve Fig 2. Collector current as a function of
collector-emitter voltage; typical values
IC=0mA; f=1MHz. I
C=5mA; V
CE =3V.
Fig 3. Collector-base capacitance as a function of
collector-base voltage; typical values Fig 4. Gain as a function of frequency; typical values
Tsp (°C)
0 20015050 100
001aac169
Ptot
(mW)
20
30
40
10
50
70
60
0
001aac170
V
CE
(V)
0653142
I
C
(mA) I
B
= 120 μA
100 μA
80 μA
40 μA
20 μA
60 μA
4
6
8
2
10
0
VCB (V)
054231
001aac171
CCBS
(pF)
0.17
0.16
0.19
0.18
0.20
0.15
001aac172
20
10
30
40
G
(dB)
0
f (MHz)
10 104
103
102
MSG
s21 2
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 5 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
VCE =3V; I
C=5mA; Z
o=50.
Fig 5. Common emitter input reflection coefficient (s11); typical values
VCE =3V; I
C=5mA.
Fig 6. Common emitter forward transmission coefficient (s21); typical values
001aac173
90°
90°
5
0.50.2
+0.2
0
+2
+5
5
2
0.2
+0.5
0.5
+1
1
2
110 0
0.2
0.6
0.4
0.8
1.0
1.0
45°135°
45°135°
180°0°
3 GHz 40 MHz
001aac174
90°
90°
45°135°
45°135°
0°
0
180°20 16 12 8 4
40 MHz
3 GHz
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 6 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
VCE =3V; I
C=5mA.
Fig 7. Common emitter reverse transmission coefficient (s12); typical values
VCE =3V; I
C=5mA; Z
o=50.
Fig 8. Common emitter output reflection co efficient (s22); typical values
001aac175
90°
90°
45°135°
45°135°
0°
0
180°0.5 0.4 0.3 0.2 0.1 40 MHz
3 GHz
001aac176
90°
90°
5
0.50.2
+0.2
0
+2
+5
5
2
0.2
+0.5
0.5
+1
1
2
110 0
0.2
0.6
0.4
0.8
1.0
1.0
45°135°
45°135°
180°0°
3 GHz
40 MHz
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 7 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
8. Application information
Table 8. SPICE parameters of the BFG310 DIE
Sequence Parameter Value Unit
1 IS 16.17 aA
2BF 210-
3NF 1-
4VAF 50V
5IKF 59.83mA
6ISE 1.726fA
7NE 2.114-
8BR 6-
9NR 1-
10 VAR 2.3 V
11 IKR 10 A
12 ISC 0 aA
13 NC 1.5 -
14 RB 3.6
15 RE 2.1
16 RC 1.6
17 CJE 115.6 fF
18 VJE 866.3 mV
19 MJE 0.285 -
20 CJC 68.18 fF
21 VJC 601 mV
22 MJC 0.123 -
23 XCJC 1 -
24 FC 0.7 -
25 TF 8.3 ps
26 XTF 10 -
27 VTF 1000 V
28 ITF 150 mA
29 PTF 0 deg
30 TR 0 ns
31 KF 0 -
32 AF 1 -
33 TNOM 25 C
34 EG 1.014 eV
35 XTB 0 -
36 XTI 8 -
37 Q1.AREA 1 -
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 8 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
Fig 9. Package equivalent circuit of SOT143R
Table 9. List of components; see Figure 9
Designation Value Unit
CCB 17 fF
CBE 84 fF
CCE 191 fF
C_base_pad 67 fF
C_emitter_pad 142 fF
LB0.95 nH
LE0.40 nH
L10.12 nH
L20.21 nH
L30.06 nH
BJT1
C_base_pad
LB
CCB
CHIP
L1
CBE
LE
L3
L2
CCE
C_emitter_pad
001aac155
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 9 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
9. Package outline
Fig 10. Package outline SOT143R (SC-61AA)
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.55
0.25 0.45
0.25
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143R SC-61AA 04-11-16
06-03-16
0 1 2 mm
scale
Plastic surface-mounted package; reverse pinning; 4 leads SOT143R
D
HE
EA
B
vMA
X
A
A1
Lp
Q
detail X
c
y
wM
e1
e
B
12
43
b1
bp
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 10 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
10. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Ch ang e notice Supersedes
BFG310_XR v.2 20110915 Product data sheet - BFG310_XR v.1
Modifications: The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
BFG310_XR v.1
(9397 750 14244) 20050202 Product data sheet - -
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 11 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device (s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
11.2 Definitions
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificatio nThe information and data provided in a Product
data sheet shall define the specification of the product as agr eed between
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Applications — Applications that are described herein for any of these
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Customers are responsible for the design and ope ration of their applications
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the obj ective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] dat a sheet Production This document contains the product specification.
BFG310_XR All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 15 September 2011 12 of 13
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
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In the event that customer uses the product for design-in and use in
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Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BFG310/XR
NPN 14 GHz wideband transistor
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 September 2011
Document identifier: BFG310_XR
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Applic ation information. . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Contact information. . . . . . . . . . . . . . . . . . . . . 12
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13