MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM30TB-2HB * * * * * IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 127 7.5 21 7.5 21 7.5 16.5 19 28.5 28.5 BuP EuP BvP EvP BwP 21.5 2-5.5 P EwP BuP BvP BwP EuP EvP EwP W 40 V 56 U 18 25 P BuN EuN BvN EvN BwN V U N EwN 98 W BuN BvN BwN EuN N EvN EwN 110 25.6 LABEL 17.5 26.5 Tab#110, t=0.5 Tab#250, t=0.8 Note: All Transistor Units are 4-Stage Darlingtons. Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25C, unless otherwise noted) Ratings Unit VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V 1000 V VCEX Collector-emitter voltage VEB=2V 1000 V VCBO Collector-base voltage Emitter open 1000 V VEBO Emitter-base voltage Collector open 7 V IC Collector current DC 30 A -IC Collector reverse current DC (forward diode current) 30 A PC Collector dissipation TC=25C 310 W IB Base current DC 2 A -ICSM Surge collector reverse current (forward diode current) Peak value of one cycle of 60Hz (half wave) 300 A Tj Junction temperature -40~+150 C Tstg Storage temperature -40~+125 C Viso Isolation voltage Parameter Symbol Conditions Charged part to case, AC for 1 minute -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS 2500 V 1.47~1.96 N*m 15~20 kg*cm 500 g (Tj=25C, unless otherwise noted) Limits Symbol Test conditions Parameter Min. Typ. Max. Unit ICEX Collector cutoff current VCE=1000V, VEB=2V -- -- 2.0 mA ICBO Collector cutoff current VCB=1000V, Emitter open -- -- 2.0 mA IEBO Emitter cutoff current VEB=7V -- -- 50 mA VCE (sat) Collector-emitter saturation voltage -- -- 4.0 V VBE (sat) Base-emitter saturation voltage -- -- 4.0 V -VCEO Collector-emitter reverse voltage -IC=30A (diode forward voltage) -- -- 1.8 V hFE DC current gain IC=30A, VCE=4V 750 -- -- -- -- -- 2.5 s Switching time VCC=600V, IC=30A, IB1=60mA, -IB2=0.6A -- -- 15 s -- -- 3.0 s Transistor part (per 1/6 module) -- -- 0.4 C/ W Diode part (per 1/6 module) -- -- 1.5 C/ W Conductive grease applied (per 1/6 module) -- -- 0.25 C/ W IC=30A, IB=40mA ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) A IB= Tj=25C mA 40 100 A IB= 40m IB= 30 IB=1 20 IB=10mA DC CURRENT GAIN hFE m 200 5mA 10 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE 10 -1 7 5 4 3 2 3.0 3.4 3.8 BASE-EMITTER VOLTAGE 10 3 7 5 4 3 2 4.2 4.6 101 7 5 4 3 2 10 0 7 5 4 3 2 VCE(sat) 10-1 10 0 IC=30A IC=10A 1 Tj=25C Tj=125C 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 IB=40mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 3 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) SWITCHING TIME COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) IC=40A 2 3 4 5 7 10 1 VBE(sat) VBE (V) 5 2 VCE=4V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) 4 VCE=10V COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) BASE CURRENT IB (A) VCE=4.0V Tj=25C 10 -2 2.6 Tj=25C Tj=125C VCE (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 4 7 5 4 3 2 10 2 10 0 5 SATURATION VOLTAGE COLLECTOR CURRENT IC (A) 50 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) BASE CURRENT IB (A) 3 VCC=600V 2 IB1=60mA -IB2=0.6A 10 1 7 5 4 3 2 ts Tj=25C Tj=125C tf ton 10 0 7 5 4 3 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR CURRENT IC (A) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA 80 3 10 1 7 5 4 3 2 COLLECTOR CURRENT IC (A) SWITCHING TIME ts, tf (s) 2 ts tf VCC=600V IC=30A IB1=60mA Tj=25C Tj=125C 10 0 7 5 4 3 3 4 5 7 10 0 2 3 4 5 7 10 1 60 50 40 30 20 10 0 2 3 BASE REVERSE CURRENT -IB2 (A) 400 600 800 1000 VCE (V) DERATING FACTOR OF F. B. S. O. A. 10 0 7 5 3 TC=25C 2 NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 DERATING FACTOR (%) 100S 10 1 7 5 3 2 SECOND BREAKDOWN AREA 90 80 70 60 50 COLLECTOR DISSIPATION 40 30 20 10 0 0 VCE (V) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 2 3 4 5 0.5 0.4 0.3 0.2 0.1 0 10 -3 2 3 4 5 7 10 -22 3 4 5 710 -1 2 3 4 5 7 10 0 20 40 60 80 100 120 140 160 CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) S S DC 50S 500 COLLECTOR CURRENT IC (A) 200 100 1m COLLECTOR-EMITTER VOLTAGE Zth (j-c) (C/ W) 0 COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 Tj=125C IB2=-2.5A 70 TIME (s) TC (C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 2 10 7 5 4 3 2 10 1 7 5 4 3 2 10 0 0.4 Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 http://store.iiic.cc/ MITSUBISHI TRANSISTOR MODULES QM30TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) 2.0 10 1 7 5 3 2 10 2 VCC=600V IB1=60mA -IB2=0.6A 10 1 Irr trr (s) 500 Irr (A), Qrr (c) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) 10 0 Qrr 10 0 7 5 3 trr Tj=25C 2 Tj=125C -1 10 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 Zth (j-c) (C/ W) 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 http://store.iiic.cc/