6MBI100S-120 IGBT Modules IGBT MODULE ( S series) 1200V / 100A 6 in one-package Features * Compact package * P.C.board mount * Low VCE(sat) Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply * Industrial machines, such as welding machines Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous Tc=25C current Tc=80C 1ms Tc=25C Tc=80C 1ms Max. power dissipation (1 device) Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -IC -IC pulse PC Tj Tstg Vis Mounting *1 Rating 1200 20 150 100 300 200 100 200 700 +150 -40 to +125 AC 2500 (1min.) 3.5 Unit V V A Equivalent Circuit Schematic 21(P) 13(P) 1(Gu) A 5(Gv) 2(Eu) A A W C C V N*m 9(Gw) 6(Ev) 19(U) 10(Ew) 17(V) 15(W) 3(Gx) 7(Gy) 11(Gz) 4(Ex) 8(Ey) 12(Ez) 14(N) 20(N) *1 : Recommendable value : 2.5 to 3.5 N*m (M5) Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Diode forward on voltage Cies Coes Cres ton tr tr(i) toff tf VF Reverse recovery time trr Turn-off time Characteristics Min. Typ. - - - - 5.5 7.2 - 2.3 - 2.8 - 12000 - 2500 - 2200 - 0.35 - 0.25 - 0.1 - 0.45 - 0.08 - 2.5 - 2.0 - - Max. 1.0 0.2 8.5 2.6 - - - - 1.2 0.6 - 1.0 0.3 3.3 - 0.35 Characteristics Min. Typ. Max. Conditions Unit VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=100mA Tj=25C VGE=15V, IC=100A Tj=125C VGE=0V VCE=10V f=1MHz VCC=600V IC=100A VGE=15V RG=12 mA A V V Tj=25C Tj=125C IF=100A V IF=100A, VGE=0V pF s s Thermal resistance characteristics Item Thermal resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 - - - - - 0.05 0.18 0.36 - Conditions Unit IGBT FWD the base to cooling fin C/W C/W C/W *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound http://store.iiic.cc/ 6MBI100S-120 IGBT Modules Characteristics Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 250 VGE= 20V 15V 12V VGE= 20V 15V 12V 200 Collector current : Ic [ A ] 200 Collector current : Ic [ A ] Tj= 125 C (typ.) 250 150 10V 100 150 10V 100 50 50 8V 8V 0 0 0 1 2 3 4 5 0 2 3 4 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage 5 o 250 Tj= 25 C (typ.) 10 o o Tj= 125 C Tj= 25 C 8 Collector - Emitter voltage : VCE [ V ] 200 Collector current : Ic [ A ] 1 Collector - Emitter voltage : VCE [ V ] 150 100 50 6 4 Ic= 200A Ic= 100A 2 Ic= 50A 0 0 1 2 3 4 5 5 10 Collector - Emitter voltage : VCE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) 20 25 Dynamic Gate charge (typ.) o o VGE=0V, f= 1MHz, Tj= 25 C Vcc=600V, Ic=100A, Tj= 25 C Collector - Emitter voltage : VCE [ V ] 50000 Capacitance : Cies, Coes, Cres [ pF ] 15 Gate - Emitter voltage : VGE [ V ] Cies 10000 1000 25 800 20 600 15 400 10 200 5 1000 Coes Cres 500 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 200 400 600 Gate charge : Qg [ nC ] http://store.iiic.cc/ 800 0 1000 Gate - Emitter voltage : VGE [ V ] 0 6MBI100S-120 IGBT Modules Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=600V,VGE=15V, Rg=12,Tj=25oC Vcc=600V,VGE=15V, Rg=12,Tj=125oC 1000 1000 500 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 ton tr tf 100 tf 50 50 0 50 100 150 200 0 50 100 Collector current : Ic [ A ] 150 200 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.) Vcc=600V,Ic=100A,VGE=15V,Tj=25oC Vcc=600V,VGE=15V, Rg=12,Tj=125oC 5000 25 o Eon(125 C) ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 500 20 o Eon(25 C) 15 o Eoff(125 C) 10 o Eoff(25 C) o Err(125 C) 5 100 o Err(25 C) 50 0 10 50 100 200 0 50 100 Gate resistance : Rg [ ] 150 200 Collector current : Ic [ A ] Reverse bias safe operating area Switching loss vs. Gate resistance (typ.) Vcc=600V,Ic=100A,VGE=15V ,Tj=125oC 80 o +VGE=15V,-VGE< C = = =15V, Rg>12,Tj<125 250 Eon 200 60 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff tr 40 150 100 20 Eoff 50 Err 0 0 10 50 100 300 Gate resistance : Rg [ ] 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 6MBI100S-120 IGBT Modules Reverse recovery characteristics (typ.) Forward current vs. Forward on voltage (typ.) Vcc=600V,VGE=15V, Rg=12 ,Tj=25oC 300 250 o o Tj=25 C Tj=125 C o trr(125 C) Reverse recovery current : Irr [ A ] 150 100 50 Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 200 0 100 o Irr(125 C) o trr(25 C) o Irr(25 C) 10 0 1 2 3 4 0 50 Forward on voltage : VF [ V ] 100 150 Forward current : IF [ A ] Transient thermal resistance 1 IGBT o Thermal resistanse : Rth(j-c) [ C/W ] FWD 0.1 M626 0.01 0.001 0.01 0.1 1 Pulse width : Pw [ sec ] Outline Drawings, mm 1221 1100.3 8-R2.250.3 94.50.3 11.5 16 15 17 14 39.90.3 3.81 13 99.60.3 21 +0.5 0 o2.50.1 1.5 18 19.05 3.81 20 19.05 11.67 500.3 621 58.42 19 19.05 6 19.05 57.50.3 19.05 +0.5 0 13.09 11.5 4-o5.50.3 3.81 o2.10.1 Section A-A 1 4 5 6 7 8 9 11 15.24 15.24 15.24 15.24 15.24 12 A http://store.iiic.cc/ A 1.150.2 o0.4 0.80.2 118.11 10.2 1.50.3 2.50.3 15 3 6.50.5 3.50.5 20.51 171 4.06 2 Shows theory dimensions 200