ECH8308
No. A1 182-1/7
Features
•
Best suited for load switching • Low ON-resistance
•
1.8V drive • Halogen free compliance
•
Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS --12 V
Gate-to-Source Voltage VGSS ±10 V
Drain Current (DC) ID--10 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --40 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (900mm
2
×0.8mm)
1.6 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7011A-002
60612 TKIM/62508PE TIIM TC-00001486
SANYO Semiconductors
DATA SHEET
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
Ordering number : ENA1182A
ECH8308
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
8765
1234
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
14
85
0.15
0 to 0.02
0.25
0.25 2.8
2.3
0.65
2.9
0.3
0.9
0.07
Top View
Bottom View
TL
ECH8308-TL-H
JK
Lot No.
ECH8308
No. A1 182-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --12 V
Zero-Gate Voltage Drain Current IDSS V
DS=--12V, VGS=0V --10 μA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=--6V, ID=--1mA --0.4 --1.3 V
Forward Transfer Admittance | yfs |VDS=--6V, ID=--4.5A 12 21 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=--4.5A, VGS=--4.5V 9.2 12.5 mΩ
RDS(on)2 ID=--2A, VGS=--2.5V 14 20 mΩ
RDS(on)3 ID=--1A, VGS=--1.8V 22 33 mΩ
Input Capacitance Ciss VDS=--6V, f=1MHz 2300 pF
Output Capacitance Coss 720 pF
Reverse Transfer Capacitance Crss 550 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
24 ns
Rise Time tr 130 ns
Turn-OFF Delay Time td(off) 230 ns
Fall Time tf195 ns
Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--10A 26 nC
Gate-to-Source Charge Qgs 4.0 nC
Gate-to-Drain “Miller” Charge Qgd 7.1 nC
Diode Forward Voltage VSD IS=--10A, VGS=0V --0.79 --1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
ECH8308-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID= --5A
RL=1.2Ω
VDD= --6V
VOUT
ECH8308
VIN
0V
--4.5V
VIN
ECH8308
No. A1 182-3/7
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
Drain Current, ID -- A
SW Time -- ID
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
Forward T ransfer Admittance, ⏐yfs⏐ -- S
⏐yfs⏐ -- ID
Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
--60 --40 --20 0 20 40 60 80 100 120 140 160
0 --1 --2 --3 --4 --5 --6 --8--7
IT13603
40
30
35
25
20
15
10
5
0
IT13604
35
25
30
20
15
10
5
0
--0.01 --0.1 --10
23 5 57--1.0
23 57 73322
3
2
100
1000
7
10
7
5
3
2
2
5
IT13607
IT13605
--0.01 --0.1
23 57 2 --1.0 --10
357 2357
10
1.0
0.1
7
7
5
3
2
7
2
5
3
5
3
2
IT13606
0 --0.2 --0.4 --0.6 --1.2--1.0--0.8
0 --2 --4 --6 --8 --10 --12
--0.001
--0.01
--10
7
5
3
2
2
7
5
3
2
7
5
3
2
--0.1
7
5
3
2
--1.0
7
5
3
2
2
7
5
3
3
IT13608
1000
Ta=25°C
ID= --1A
VDS= --6V
Ta= --25°C
75
°C
25°C
VGS=0V
--25
°
C
Ta=75°C
25
°
C
VDD= --6V
VGS= --4.5V
td(off)
td(on)
tr
tf
Ciss
Coss
Crss
--3A
VGS= --2.5V, ID= --3A
VGS=
--1.8
V, ID=
--
1A
0
0
--1
--2
--3
--4
--5
--9
--8
--7
--6
--10
0
--2
--4
--6
--8
--10
--12
--14
--1.0--0.7 --0.8 --0.9--0.5--0.1 --0.2 --0.3 --0.4 --0.6
IT13601
0 --0.2 --0.6 --1.0 --1.4--0.4 --0.8 --1.2 --1.6 --1.8
IT13602
VGS= --1.2V
--1.5V
--8.0V
--3.5V
--1.8V
--2.5V
VDS= --6V
Ta=75°C
--25°C
25°C
--4.5V
--5A
VGS= --4.5V, ID= --5A
f=1MHz
ECH8308
No. A1 182-4/7
0
020 40
0.4
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
IT13611
0.8
1.2
1.6
1.8
0.2
0.6
1.0
1.4
When mounted on ceramic substrate
(900mm2✕0.8mm)
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
IT13610
2
7
2
3
5
7
--1.0
--0.1 --0.1--0.01 35723 2 --1.0
5732
0
0264
--4.5
IT13609
8 121620242 6 10 14 18 22
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0 VDS= --6V
ID= --10AIDP= --40A
ID= --10A
1ms
10ms
DC operation (
Ta=25°C)
Operation in this
area is limited by RDS(on).
100ms
--10
5732
2
3
5
3
5
7
--10
PW≤10μs
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm)
ECH8308
No. A1 182-5/7
Embossed Taping Specifi cation
ECH8308-TL-H
ECH8308
No. A1 182-6/7
Outline Drawing Land Pattern Example
ECH8308-TL-H
Mass (g) Unit
0.02
* For reference
mm Unit: mm
0.4
0.6
2.8
0.65
ECH8308
PS No. A1182-7/7
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the ECH8308 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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