ECH8308 Ordering number : ENA1182A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8308 General-Purpose Switching Device Applications Features * * * Best suited for load switching 1.8V drive Protection diode in * * Low ON-resistance Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW10s, duty cycle1% --10 A A W 150 C --55 to +150 C Product & Package Information * Package : ECH8 * JEITA, JEDEC :* Minimum Packing Quantity : 3,000 pcs./reel ECH8308-TL-H Top View Packing Type : TL 2.9 0.25 V 1.6 When mounted on ceramic substrate (900mm2x0.8mm) unit : mm (typ) 7011A-002 Marking 0.15 8 5 JK 0 t o 0.02 Lot No. 2.3 TL 4 1 0.9 0.65 Electrical Connection 0.3 8 7 6 5 1 2 3 4 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 2.8 V 10 --40 Package Dimensions 0.25 --12 Bot t om View SANYO : ECH8 http://semicon.sanyo.com/en/network 60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7 ECH8308 Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Conditions Ratings min typ ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=8V, VDS=0V --12 VDS=--6V, ID=--1mA VDS=--6V, ID=--4.5A --0.4 12 ID=--4.5A, VGS=--4.5V ID=--2A, VGS=--2.5V ID=--1A, VGS=--1.8V Unit max V --10 A 10 A --1.3 21 V S 9.2 12.5 m 14 20 m 22 33 m 2300 pF 720 pF Crss 550 pF Turn-ON Delay Time td(on) 24 ns Rise Time tr 130 ns Turn-OFF Delay Time td(off) 230 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=--6V, f=1MHz See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=--10A 195 ns 26 nC 4.0 nC 7.1 IS=--10A, VGS=0V --0.79 nC --1.2 V Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --5A RL=1.2 VOUT VIN D PW=10s D.C.1% G ECH8308 P.G 50 S Ordering Information Device ECH8308-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1182-2/7 ECH8308 ID -- VDS --2 VGS= --1.2V --4 --2 --1 0 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V 0 --1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- m --5A 25 20 15 10 5 --1 --2 --3 --4 --5 --6 --7 --8 3 2 C 5 --2 = C Ta 75 C 25 1.0 7 5 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 --1.8 IT13602 --3A V, I D= --2.5 V GS= 15 = --5A 4.5V, I D V GS= -- 10 5 --40 --20 100 120 140 160 IT13604 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT13606 Ciss, Coss, Crss -- VDS f=1MHz Ciss, Coss, Crss -- pF 2 tf 100 tr 3 Ciss 2 1000 Coss 7 Crss 5 td(on) 3 80 5 td(off) 5 60 VGS=0V 7 5 7 40 Diode Forward Voltage, VSD -- V 7 3 20 IS -- VSD 0 VDD= --6V VGS= --4.5V 1000 0 --10 7 5 3 2 5 7 --10 IT13605 SW Time -- ID 2 --1.6 Ta= 7 2 2 10 --0.01 20 --0.01 7 5 3 2 --0.001 3 0.1 --0.01 --1.4 = --1A V, I D .8 1 -VGS= 25 3 2 VDS= --6V 2 --1.2 Ambient Temperature, Ta -- C yfs -- ID 7 5 3 --1.0 30 IT13603 Source Current, IS -- A Forward Transfer Admittance, yfs -- S Gate-to-Source Voltage, VGS -- V 10 7 5 --0.8 RDS(on) -- Ta 0 --60 0 0 --0.6 Gate-to-Source Voltage, VGS -- V 35 --3A 30 --0.4 Ta=25C ID= --1A 35 --0.2 IT13601 RDS(on) -- VGS 40 Static Drain-to-Source On-State Resistance, RDS(on) -- m --0.9 5C 25C --25 C --0.1 0 Switching Time, SW Time -- ns 25 C --3 --6 C --4 --8 --25 --5 75 C --6 --10 Ta = --7 --12 --4.5V Drain Current, ID -- A --8 VDS= --6V --1.5V Drain Current, ID -- A --9 ID -- VGS --14 --2.5V --3.5V -1.8V --8.0V --10 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 2 3 IT13607 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT13608 No. A1182-3/7 ECH8308 VGS -- Qg 7 5 VDS= --6V ID= --10A --4.0 IDP= --40A PW10s 3 1m 2 3 2 0 2 4 6 8 10 12 14 16 18 20 Total Gate Charge, Qg -- nC 22 24 26 IT13609 PD -- Ta 1.8 ) C 25 2 0 Operation in this area is limited by RDS(on). --1.0 7 5 3 s a= (T --1.0 0m n --1.5 10 io at er --2.0 s m --2.5 s ID= --10A 10 --3.0 --10 7 5 op Drain Current, ID -- A --3.5 --0.5 Allowable Power Dissipation, PD -- W ASO C D Gate-to-Source Voltage, VGS -- V --4.5 Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT13610 Drain-to-Source Voltage, VDS -- V When mounted on ceramic substrate (900mm20.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT13611 No. A1182-4/7 ECH8308 Embossed Taping Specification ECH8308-TL-H No. A1182-5/7 ECH8308 Outline Drawing ECH8308-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1182-6/7 ECH8308 Note on usage : Since the ECH8308 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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