1
Item Symbol Rating Unit
Drain-source voltage V DS 500
Continuous drain current ID±15
Pulsed drain current ID(puls] ±60
Gate-source voltage VGS ±35
Maximum Avalanche Energy EAV *1 88.7
Max. power dissipation PD50
Operating and storage Tch +150
temperature range Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2642-01MR FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=500V
VGS=±35V
ID=7.5A VGS=10V
ID=7.5A VDS=25V
VCC=300V ID=15A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
mA
nA
Ω
S
pF
A
V
ns
µC
ns
Min. T yp. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 2.50
62.5 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA VGS=0V
ID=1mA VDS=VGS
Tch=25°C
VGS=0V Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100µH Tch=25°C
IF=2xID VGS=0V Tch=25°C
IF=ID VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
mJ
W
°C
°C
*1 L=0.72mH, Vcc=50V
500
3.5 4.0 4.5
10 500
0.2 1.0
10 100
0.44 0.55
4.5 9.0
1400 2100
250 380
110 170
30 50
110 170
90 140
55 90
15 1.1 1.65
500
8.0
-55 to +150
TO-220F15
3. Source
2.54
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
High voltage
VGS=±35V Guarantee
Avalanche-proof
Applications
Switching regulators
UPS
DC-DC converters
General purpose power amplifier
保守移行機種
Not recommend for new design.
http://store.iiic.cc/
2
Characteristics
2SK2642-01MR
FUJI POWER MOSFET
ID [ A ]
0 5 10 15 20 25 30 35
0
5
10
15
20
25
30
35
40
5V
5.5V
7V
6.5V
6V
8V
10V
VGS=20V
VDS [V]
ID [A]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25oC
0 5 10 15 20 25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
7V
6.5V5.5V 6V
VGS=
5V
RDS(on) [Ω]
Typical drain-source on-state resistance
RDS(on)=f(ID):80µs pulse test, Tc=25oC
012345678910
10-2
10-1
100
101
Typical transfer characteristic
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25oC
ID [A]
VGS [ V ]
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
max.
typ.
Drain-source on-state resistance
RDS(on)=f(Tch):ID=7.5A,VGS=10V
RDS(on) [ Ω ]
Tch [ oC]
10-1 100101
10-1
100
101
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25oC
gfs [s]
ID [A]
-50 0 50 100 150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
min.
typ.
max.
Gate threshold voltage
VGS(th)=f(Tch):ID=1mA,VDS=VGS
VGS(th) [V]
Tch [ oC ]
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3
FUJI POWER MOSFET 2SK2642-01MR
10-2 10-1 100101102
10p
100p
1n
10n
Crss
Coss
Ciss
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
C [F]
VDS [V]
0 20 40 60 80 100 120 140 160 180
0
50
100
150
200
250
300
350
400
Vcc=100V
250V
400V
100V
250V
Vcc=400V
VGS [V]
VDS [V]
Typical gate charge characteristic
VGS=f(Qg):ID=15A,Tc=25oC
Qg [nC]
0
5
10
15
20
25
30
35
40
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10-2
10-1
100
101
Tch=25oC typ.
Forward characteristic of reverse of diode
IF=f(VSD):80µs pules test,VGS=0V
IF [A]
VSD [V]
0 50 100 150
0
10
20
30
40
50
60
70
Power Dissipation
PD=f(Tc)
PD [W]
Tc [ oC ]
100101102103
10-2
10-1
100
101
102
1µs
t=0.01µs
Safe operating area
ID=f(VDS):D=0.01,Tc=25oC
DC
100ms
10ms
1ms
100µs
10µs
VDS [V]
ID [A]
10-5 10-4 10-3 10-2 10-1 100101
10-2
10-1
100
101
0.5
0.2
0.02
0.05
0.1
0.01
0
Transient thermal impedande
Zthch=f(t) parameter:D=t/T
Zthch-c [K/W]
t [s]
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4
FUJI POWER MOSFET 2SK2642-01MR
0 50 100 150
0
20
40
60
80
100
Avalanche energy derating
Eas=f(starting Tch):Vcc=50V,IAV=15A
Eas [mJ]
Starting Tch [ oC ]
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