2SK2642-01MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features TO-220F15 High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=35V Guarantee Avalanche-proof 2.54 Applications Switching regulators UPS DC-DC converters General purpose power amplifier 3. Source Equivalent circuit schematic Drain(D) Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 15 60 35 88.7 50 +150 -55 to +150 Unit V A A V mJ W C C Gate(G) Source(S) . de n sig ew n for *1 L=0.72mH, Vcc=50V nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage ot N Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) o c e r IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=7.5A VGS=10V 500 3.5 Tch=25C Tch=125C ID=7.5A VDS=25V VDS =25V VGS=0V f=1MHz 4.5 VCC=300V ID=15A VGS=10V RGS=10 L=100H Tch=25C IF=2xID VGS=0V Tch=25C IF=ID VGS=0V -di/dt=100A/s Tch=25C Typ. Max. Units 4.0 4.5 10 500 0.2 1.0 10 100 0.44 0.55 9.0 1400 2100 250 380 110 170 30 50 110 170 90 140 55 90 15 1.1 500 8.0 1.65 V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 2.50 62.5 Units C/W C/W 1 2SK2642-01MR FUJI POWER MOSFET Characteristics Typical output characteristics Drain-source on-state resistance RDS(on)=f(Tch):ID=7.5A,VGS=10V o ID=f(VDS):80s pulse test,Tc=25 C 2.0 40 VGS=20V 35 10V 1.5 30 8V RDS(on) [ ] ID [A] 25 20 7V 15 1.0 max. typ. 6.5V 10 0.5 6V 5 5.5V 0.0 5V 0 0 5 10 15 20 25 30 -50 35 0 50 VDS [V] o RDS(on)=f(ID):80 s pulse test, Tc=25 C o ID=f(VGS):80s pulse test,VDS=25V,Tch=25 C 4.0 VGS= 5V 3.5 1 RDS(on) [ ] ID [A] 2.5 6.5V 6V 7V -2 0 1 2 3 4 t No 5 o c e r 6 7 8 d en 9 2.0 1.5 mm -1 10 . n sig ew n for 0 10 5.5V de 3.0 10 150 Typical drain-source on-state resistance Typical transfer characteristic 10 100 o Tch [ C] 1.0 0.5 0.0 10 0 5 10 VGS [ V ] 15 20 25 ID [ A ] Typical forward transconductance Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS o gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C 6.0 5.0 1 10 max. gfs [s] VGS(th) [V] 4.0 typ. min. 3.0 0 10 2.0 1.0 -1 10 10-1 0.0 0 1 10 10 -50 0 50 100 150 o ID [A] Tch [ C ] http://store.iiic.cc/ 2 2SK2642-01MR FUJI POWER MOSFET Typical gate charge characteristic Typical capacitances C=f(VDS):VGS=0V,f=1MHz o VGS=f(Qg):ID=15A,Tc=25 C 40 400 10n Vcc=400V 0V 35 10 c= V Vc 250 V 0 40 30 350 300 Ciss C [F] 250 250V 25 200 20 150 15 VGS [V] VDS [V] 1n Coss 100p Crss 100V 100 10 5 50 0 10p -2 10 10 -1 10 0 1 0 2 10 10 20 40 60 80 100 120 140 0 180 160 Qg [nC] VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80 s pules test,VGS=0V Power Dissipation PD=f(Tc) 70 60 1 10 o e m m 30 nd -1 10 -2 10 n sig ew n for 40 0 10 . de 50 PD [W] IF [A] Tch=25 C typ. 0.0 0.2 0.4 t No 0.6 0.8 VSD [V] o c e r 1.0 1.2 20 10 0 1.4 0 50 100 150 o Tc [ C ] Safe operating area o ID=f(VDS):D=0.01,Tc=25 C Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 2 10 1 1 t=0.01s 10 DC 1s 0.5 10 10s 0 100s ID [A] Zthch-c [K/W] 0.2 0.1 0 10 1ms 0.05 -1 10 10ms 0.02 10 -1 100ms 0.01 0 -2 10 -5 10 10 -4 10 -3 -2 10 -1 10 0 10 10 1 10 -2 10 t [s] 0 1 10 2 10 10 3 VDS [V] http://store.iiic.cc/ 3 2SK2642-01MR FUJI POWER MOSFET Avalanche energy derating Eas=f(starting Tch):Vcc=50V,IAV=15A 100 80 Eas [mJ] 60 40 20 0 0 50 100 150 o Starting Tch [ C ] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4